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1. 发明授权

US4283259A Method for maskless chemical and electrochemical machining 失效
标题翻译：无掩模化学和电化学加工方法
公开(公告)号：US4283259A
公开(公告)日：1981-08-11
申请号：US37074
申请日：1979-05-08
申请人： Robert L. Melcher , Lubomyr T. Romankiw , Robert J. von Gutfeld
发明人： Robert L. Melcher , Lubomyr T. Romankiw , Robert J. von Gutfeld
IPC分类号： H05K3/06 , B23K26/12 , C23F1/02 , C23F4/00 , C25F3/14 , H01L21/306 , H01L21/3213 , H05K3/22 , B23P1/00 , C25F3/02
CPC分类号： H01L21/32134 , C23F1/02 , C25F3/14
摘要： A method for high resolution maskless chemical and electrochemical machining is described. Preferential etching results from exposing those regions where machining is sought to an energy beam. Such exposures can increase the ething rate in the case of electrochemical machining by a factor of 10.sup.3 to 10.sup.4. Such enhancement is sufficient to make masking unnecessary.
摘要翻译：描述了一种用于高分辨率无掩蔽化学和电化学加工的方法。优先蚀刻是将寻求加工的区域暴露于能量束。这种曝光可以在电化学加工的情况下提高103至104的使用率。这种增强足以使掩蔽不必要。

2. 发明授权

US4379022A Method for maskless chemical machining 失效
标题翻译：无掩模化学加工方法
公开(公告)号：US4379022A
公开(公告)日：1983-04-05
申请号：US170472
申请日：1980-07-21
申请人： Robert L. Melcher , Lubomyr T. Romankiw , Robert J. Von Gutfeld
发明人： Robert L. Melcher , Lubomyr T. Romankiw , Robert J. Von Gutfeld
IPC分类号： C23F1/02 , C25F3/14 , H01L21/3213
CPC分类号： H01L21/32134 , C23F1/02 , C25F3/14
摘要： A method for high resolution maskless chemical and electrochemical machining is described. Preferential etching results from exposing those regions where machining is sought to an energy beam. Such exposures can increase the etching rate in the case of electrochemical machining by a factor of 10.sup.3 to 10.sup.4. Such enhancement is sufficient to make masking unnecessary.
摘要翻译：描述了一种用于高分辨率无掩蔽化学和电化学加工的方法。优先蚀刻是将寻求加工的区域暴露于能量束。这种曝光可以在电化学加工的情况下提高103至104的蚀刻速率。这种增强足以使掩蔽不必要。

3. 发明授权

US4349583A Laser enhanced maskless method for plating and simultaneous plating and etching of patterns 失效
标题翻译：激光增强无掩模方法，用于电镀和同时电镀和蚀刻图案
公开(公告)号：US4349583A
公开(公告)日：1982-09-14
申请号：US287661
申请日：1981-07-28
申请人： Larysa H. Kulynych , Lubomyr T. Romankiw , Robert J. von Gutfeld
发明人： Larysa H. Kulynych , Lubomyr T. Romankiw , Robert J. von Gutfeld
IPC分类号： C25D5/02 , H05K3/22 , B05D3/06
CPC分类号： H05K3/225 , C23C18/1612 , C23C18/1637 , C23C18/1667 , C23C18/54
摘要： A method for high resolution maskless plating with an immersion, exchange or like plating bath is described. Preferential plating results from exposing those regions where plating is sought to an energy beam to increase the plating rate and the resulting plating thickness is several orders of magnitude greater than is possible by standard immersion techniques.
摘要翻译：描述了一种用浸渍，交换或类似电镀槽进行高分辨率无掩模电镀的方法。优选电镀是将那些寻求电镀的区域暴露于能量束以提高电镀速率，并且所得到的电镀厚度比通过标准浸渍技术可能大几个数量级。

4. 发明授权

US4497692A Laser-enhanced jet-plating and jet-etching: high-speed maskless patterning method 失效
标题翻译：激光增强喷镀和喷射蚀刻：高速无掩模图案化方法
公开(公告)号：US4497692A
公开(公告)日：1985-02-05
申请号：US504016
申请日：1983-06-13
申请人： Mordechai H. Gelchinski , Lubomyr T. Romankiw , Donald R. Vigliotti , Robert J. Von Gutfeld
发明人： Mordechai H. Gelchinski , Lubomyr T. Romankiw , Donald R. Vigliotti , Robert J. Von Gutfeld
IPC分类号： H01L21/306 , C23F1/00 , C25D5/02 , C25D5/08 , C25F3/14 , H05K3/06 , H05K3/24 , C25D21/10 , C25F3/02
CPC分类号： C23F1/00 , C25D5/024 , C25D5/026 , C25F3/14 , H05K3/068 , H05K3/241
摘要： This metal deposition/material removal technique modifies free-standing or submerged jet plating with an electromagnetic energy beam such as an intense laser beam, directed collinearly along the jet. Experiments were made to deposit gold contact areas on nickel plated beryllium-copper substrates used for microelectronic connectors. The deposits are found to be crack-free and dense, possessing excellent adhesion to the substrate. Deposition rates for 0.05 cm diameter gold spots are on the order of 10 micrometers per second.
摘要翻译：这种金属沉积/材料去除技术用电磁能束（例如强激光束）修改独立喷射镀层或浸没喷镀，沿射流线性地引导。进行实验以在用于微电子连接器的镀镍铍铜基底上沉积金接触区域。发现沉积物是无裂纹和致密的，具有优异的与基材的粘合性。 0.05厘米直径金点的沉积速率约为每秒10微米。

5. 发明授权

US4432855A Automated system for laser mask definition for laser enhanced and conventional plating and etching 失效
标题翻译：用于激光增强和常规电镀和蚀刻的激光掩模定义自动化系统
公开(公告)号：US4432855A
公开(公告)日：1984-02-21
申请号：US429657
申请日：1982-09-30
申请人： Lubomyr T. Romankiw , Robert J. von Gutfeld
发明人： Lubomyr T. Romankiw , Robert J. von Gutfeld
IPC分类号： C23F4/00 , C23C18/14 , C23C18/16 , C23C18/18 , C23C18/31 , C23C18/32 , C23C18/34 , C23C18/38 , C23C18/40 , C23C18/42 , C23C18/44 , C23F1/00 , C25D5/00 , C25D5/02 , C25F3/14 , C25F7/00 , H05K3/00 , H05K3/07 , H05K3/10 , H05K3/24 , C25D17/00
CPC分类号： H05K3/243 , C25D21/02 , C25D5/00 , C25D5/024 , C25F3/14 , H05K2203/107 , H05K2203/1545 , H05K3/0032 , H05K3/07 , H05K3/108 , H05K3/241
摘要： A laser enhanced electroplating system or etching system or conventional electroplating or etching system includes a continuous electrochemical processing system with a sheet of material to be treated electrochemically passed from a supply roller to a plating bath and out over an exit roller with the plating system under automatic control. A rinse-tank is also proved in series with the plating tank. The sheet to be treated electrochemically can be coated with a protective film which prevents electrochemical action from occurring where it is present, but which sheet can be removed in a predetermined location. One removes the protective film where desired to provide a mask by means of a laser which is scanned under automatic control. Then the plating or etching operation occurs through the openings in the mask. A rinse-tank contains a solvent capable of removing the mask from the sheet subsequent to the plating or etching operation. An array of lasers can be employed. An array of lasers can be multiplexed, synchronously activated or pulsed. The electrochemical operation can be performed with the concomitant application of energy from the laser in order to enhance the chemical action in areas from which the masking (protective) film has been removed. The laser can be scanned by means of a mirror, which oscillates or can be fixed. The masking material is composed of an organic material such as glycol phthalate, paraffin, photoresist, gelatin, etc.
摘要翻译：激光增强电镀系统或蚀刻系统或传统的电镀或蚀刻系统包括连续的电化学处理系统，其具有待处理的材料片材，其从电源辊电镀到镀浴，并且在电镀系统自动下出口的出口辊控制。冲洗槽也与镀槽串联证明。待电化学处理的片材可以涂覆保护膜，该保护膜防止在存在电化学作用的地方发生，而在预定位置可以除去哪种片材。通过在自动控制下扫描的激光器，可以在需要时去除保护膜以提供掩模。然后通过掩模中的开口进行电镀或蚀刻操作。漂洗槽含有能够在电镀或蚀刻操作之后从片材上除去掩模的溶剂。可以采用激光器阵列。激光器阵列可以被复用，同步激活或脉冲。电化学操作可以通过伴随来自激光器的能量的应用来进行，以增强已经除去掩蔽（保护）膜的区域中的化学作用。可以通过镜子扫描激光，其可以振荡或固定。掩蔽材料由有机材料如邻苯二甲酸二醇，石蜡，光致抗蚀剂，明胶等组成。

6. 发明授权

US09064628B2 Inductor with stacked conductors 有权
标题翻译：具有堆叠导体的电感器
公开(公告)号：US09064628B2
公开(公告)日：2015-06-23
申请号：US13477978
申请日：2012-05-22
申请人： Robert E. Fontana, Jr. , Philipp Herget , Eugene J. O'Sullivan , Lubomyr T. Romankiw , Naigang Wang , Bucknell C. Webb
发明人： Robert E. Fontana, Jr. , Philipp Herget , Eugene J. O'Sullivan , Lubomyr T. Romankiw , Naigang Wang , Bucknell C. Webb
IPC分类号： H01F5/00 , H01F27/28 , H01F17/00 , H01L49/02
CPC分类号： H01F27/2804 , H01F5/00 , H01F17/0013 , H01F2017/0066 , H01F2017/0086 , H01F2027/2809 , H01L28/10
摘要： A thin film coupled inductor, a thin film spiral inductor, and a system that includes an electronic device and a power supply or power converter incorporating one or more such inductors. A thin film coupled inductor includes a wafer substrate; a bottom yoke comprising a magnetic material above the wafer substrate; a first insulating layer above the bottom yoke; a first conductor above the bottom yoke and separated therefrom by the first insulating layer; a second insulating layer above the first conductor; a second conductor above the second insulating layer; a third insulating layer above the second conductor; and a non-planar top yoke above the third insulating layer, the top yoke comprising a magnetic material.
摘要翻译：薄膜耦合电感器，薄膜螺旋电感器以及包括电子器件和并入一个或多个此类电感器的电源或功率转换器的系统。薄膜耦合电感器包括晶片衬底; 底部轭，其包括晶片衬底上方的磁性材料; 在底部轭上方的第一绝缘层; 第一导体，位于底部磁轭之上并由第一绝缘层分离; 在所述第一导体上方的第二绝缘层; 在第二绝缘层上方的第二导体; 在第二导体上方的第三绝缘层; 以及在第三绝缘层上方的非平面顶部磁轭，顶部磁轭包括磁性材料。

7. 发明申请

US20110272287A1 METHOD FOR PATTERNING MAGNETIC FILMS 审中-公开
标题翻译：用于绘制磁片的方法
公开(公告)号：US20110272287A1
公开(公告)日：2011-11-10
申请号：US12776010
申请日：2010-05-07
申请人： Elizabeth A. Duch , Ronald Goldblatt , David L. Rath , Lubomyr T. Romankiw , Xiaoyan Shao , Steven E. Steen , James Vichiconti
发明人： Elizabeth A. Duch , Ronald Goldblatt , David L. Rath , Lubomyr T. Romankiw , Xiaoyan Shao , Steven E. Steen , James Vichiconti
IPC分类号： C25D5/34
CPC分类号： C25D5/48 , C25D5/02 , G11B5/855 , G11B5/858
摘要： A method of patterning magnetic devices and sensors by double etching, which includes forming a layer of dielectric on a substrate; depositing a thin adhesion layer and a thin seed layer; applying a thin resist frame to pattern a structure; cleaning the metal surface to prepare for plating; electroplating to fill up the structure and the uncovered field area, which uses a paddle cell with a permanent magnet providing magnetic field to induce magnetic orientation; stripping the resist frame; etching the seed layer/adhesion layer exposed below the resist frame down to the dielectric surface; etching the rest of magnetic materials and the seed layer using electrolytic etching in the field; etching the adhesion layer in the field, and repeating the steps for building structures with multiple levels.
摘要翻译：一种通过双蚀刻图案化磁性器件和传感器的方法，包括在衬底上形成电介质层; 沉积薄的粘合层和薄的种子层; 施加薄的抗蚀剂框架以构图结构; 清洗金属表面进行电镀准备; 电镀以填充结构和未覆盖的场区域，其使用具有提供磁场的永磁体的桨电池来诱导磁取向; 剥离抗蚀框架; 将暴露在抗蚀剂框架下方的种子层/粘合层蚀刻到电介质表面; 在现场使用电解蚀刻蚀刻其余的磁性材料和种子层; 在现场蚀刻粘合层，并重复用于建造具有多层结构的步骤。

8. 发明授权

US07944006B2 Metal gate electrode stabilization by alloying 有权
标题翻译：金属栅电极通过合金化稳定
公开(公告)号：US07944006B2
公开(公告)日：2011-05-17
申请号：US12014511
申请日：2008-01-15
申请人： Veeraraghavan S. Basker , Hariklia Deligianni , Rajarao Jammy , Vamsi Krishna Paruchuri , Lubomyr T. Romankiw
发明人： Veeraraghavan S. Basker , Hariklia Deligianni , Rajarao Jammy , Vamsi Krishna Paruchuri , Lubomyr T. Romankiw
IPC分类号： H01L29/78
CPC分类号： C25D3/567 , C25D5/02 , C25D7/12 , H01L21/28079 , H01L21/28088 , H01L21/28176 , H01L29/495 , H01L29/4966 , H01L29/517
摘要： Stabilized metal gate electrode for complementary metal-oxide-semiconductor (“CMOS”) applications and methods of making the stabilized metal gate electrodes are disclosed. Specifically, the metal gate electrodes are stabilized by alloying wherein the alloy comprises a metal selected from the group consisting of Re, Ru, Pt, Rh, Ni, Al and combinations thereof and an element selected from the group consisting of W, V, Ti, Ta and combinations thereof.
摘要翻译：公开了用于互补金属氧化物半导体（“CMOS”）应用的稳定金属栅极电极和制造稳定的金属栅电极的方法。具体地说，金属栅电极通过合金化来稳定化，其中合金包括选自Re，Ru，Pt，Rh，Ni，Al及其组合的金属和选自W，V，Ti ，Ta及其组合。

9. 发明授权

US07785982B2 Structures containing electrodeposited germanium and methods for their fabrication 失效
标题翻译：含有电沉积锗的结构及其制造方法
公开(公告)号：US07785982B2
公开(公告)日：2010-08-31
申请号：US11620224
申请日：2007-01-05
申请人： Stephen W. Bedell , Hariklia Deligianni , Qiang Huang , Lubomyr T. Romankiw , Devendra K. Sadana , Katherine L. Saenger
发明人： Stephen W. Bedell , Hariklia Deligianni , Qiang Huang , Lubomyr T. Romankiw , Devendra K. Sadana , Katherine L. Saenger
IPC分类号： H01L21/76
CPC分类号： H01L21/823807 , H01L21/0237 , H01L21/02532 , H01L21/02628 , H01L21/02636 , H01L21/02639 , H01L21/28255 , H01L29/1054 , H01L29/78
摘要： Methods for electrodepositing germanium on various semiconductor substrates such as Si, Ge, SiGe, and GaAs are provided. The electrodeposited germanium can be formed as a blanket or patterned film, and may be crystallized by solid phase epitaxy to the orientation of the underlying semiconductor substrate by subsequent annealing. These plated germanium layers may be used as the channel regions of high-mobility channel field effect transistors (FETs) in complementary metal oxide semiconductor (CMOS) circuits.
摘要翻译：提供了在诸如Si，Ge，SiGe和GaAs的各种半导体衬底上电沉积锗的方法。电沉积锗可以形成为覆盖或图案化的膜，并且可以通过后续退火使固相外延结晶到下面的半导体衬底的取向。这些电镀锗层可以用作互补金属氧化物半导体（CMOS）电路中的高迁移率沟道场效应晶体管（FET）的沟道区。

10. 发明申请

US20090294989A1 FORMATION OF VERTICAL DEVICES BY ELECTROPLATING 有权
标题翻译：通过电镀形成垂直装置
公开(公告)号：US20090294989A1
公开(公告)日：2009-12-03
申请号：US12538782
申请日：2009-08-10
申请人： Hariklia Deligianni , Qiang Huang , John P. Hummel , Lubomyr T. Romankiw , Mary B. Rothwell
发明人： Hariklia Deligianni , Qiang Huang , John P. Hummel , Lubomyr T. Romankiw , Mary B. Rothwell
IPC分类号： H01L23/48
CPC分类号： H01L21/76879 , H01L21/2885 , Y10S205/925
摘要： The present invention is related to a method for forming vertical conductive structures by electroplating. Specifically, a template structure is first formed, which includes a substrate, a discrete metal contact pad located on the substrate surface, an inter-level dielectric (ILD) layer over both the discrete metal contact pad and the substrate, and a metal via structure extending through the ILD layer onto the discrete metal contact pad. Next, a vertical via is formed in the template structure, which extends through the ILD layer onto the discrete metal contact pad. A vertical conductive structure is then formed in the vertical via by electroplating, which is conducted by applying an electroplating current to the discrete metal contact pad through the metal via structure. Preferably, the template structure comprises multiple discrete metal contact pads, multiple metal via structures, and multiple vertical vias for formation of multiple vertical conductive structures.
摘要翻译：本发明涉及通过电镀形成垂直导电结构的方法。具体地，首先形成模板结构，其包括衬底，位于衬底表面上的离散金属接触焊盘，分立金属接触焊盘和衬底两者之间的级间电介质（ILD）层，以及金属通孔结构延伸穿过ILD层到分立的金属接触垫上。接下来，在模板结构中形成垂直通孔，其延伸穿过ILD层到分立的金属接触垫上。然后通过电镀在垂直通孔中形成垂直导电结构，电镀通过通过金属通孔结构将电镀电流施加到离散的金属接触焊盘来进行。优选地，模板结构包括多个分立的金属接触焊盘，多个金属通孔结构以及用于形成多个垂直导电结构的多个垂直通孔。

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