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1. 发明申请

US20080158662A1 Methods to manufacture contaminant-gettering materials in the surface of EUV optics 有权
标题翻译：在EUV光学表面制造污染物吸收材料的方法
公开(公告)号：US20080158662A1
公开(公告)日：2008-07-03
申请号：US12002152
申请日：2007-12-14
申请人： Robert L. Bristol , Bruce H. Billett
发明人： Robert L. Bristol , Bruce H. Billett
IPC分类号： G02B1/10
CPC分类号： G21K1/06 , G21K2201/067
摘要： Methods to manufacture contaminant-gettering materials in the surface of EUV optics are described herein. An optical element is patterned and a contaminant-gettering material is formed on a surface of the optical element. In one embodiment, a photoresist is deposited on an optical coating on the optical element. Trenches are formed in the optical coating. The gettering agent is formed into the trenches over the photoresist. Next, the photoresist is removed from the optical coating to expose the gettering agent in the trenches. For another embodiment, patches of a nanotube forest having a gettering agent are formed in designated areas of an optical element. The gettering agent of the patches may be a plurality of carbon nanotubes. The optical coating is formed on a substrate between patches of the gettering agent.
摘要翻译：本文描述了在EUV光学器件的表面中制造污染物吸收材料的方法。对光学元件进行图案化，并且在光学元件的表面上形成污染物吸收材料。在一个实施例中，光致抗蚀剂沉积在光学元件上的光学涂层上。在光学涂层中形成沟槽。吸光剂形成在光致抗蚀剂上的沟槽中。接下来，从光学涂层去除光致抗蚀剂以暴露沟槽中的吸杂剂。对于另一个实施例，在光学元件的指定区域中形成具有吸气剂的纳米管森林的贴片。补片的吸气剂可以是多个碳纳米管。该光学涂层形成在吸气剂的贴片之间的衬底上。

2. 发明授权

US07332416B2 Methods to manufacture contaminant-gettering materials in the surface of EUV optics 有权
公开(公告)号：US07332416B2
公开(公告)日：2008-02-19
申请号：US11092167
申请日：2005-03-28
申请人： Robert L. Bristol , Bruce H. Billett
发明人： Robert L. Bristol , Bruce H. Billett
IPC分类号： H01L21/322
CPC分类号： G21K1/06 , G21K2201/067
摘要： Methods to manufacture contaminant-gettering materials in the surface of EUV optics are described herein. An optical element is patterned and a contaminant-gettering material is formed on a surface of the optical element. In one embodiment, a photoresist is deposited on an optical coating on the optical element. Trenches are formed in the optical coating. The gettering agent is formed into the trenches over the photoresist. Next, the photoresist is removed from the optical coating to expose the gettering agent in the trenches. For another embodiment, patches of a nanotube forest having a gettering agent are formed in designated areas of an optical element. The gettering agent of the patches may be a plurality of carbon nanotubes. The optical coating is formed on a substrate between patches of the gettering agent.

3. 发明授权

US07825424B2 Methods to manufacture contaminant-gettering materials in the surface of EUV optics 有权
标题翻译：在EUV光学表面制造污染物吸收材料的方法
公开(公告)号：US07825424B2
公开(公告)日：2010-11-02
申请号：US12002152
申请日：2007-12-14
申请人： Robert L. Bristol , Bruce H. Billett
发明人： Robert L. Bristol , Bruce H. Billett
IPC分类号： H01L29/26
CPC分类号： G21K1/06 , G21K2201/067
摘要： Methods to manufacture contaminant-gettering materials in the surface of EUV optics are described herein. An optical element is patterned and a contaminant-gettering material is formed on a surface of the optical element. In one embodiment, a photoresist is deposited on an optical coating on the optical element. Trenches are formed in the optical coating. The gettering agent is formed into the trenches over the photoresist. Next, the photoresist is removed from the optical coating to expose the gettering agent in the trenches. For another embodiment, patches of a nanotube forest having a gettering agent are formed in designated areas of an optical element. The gettering agent of the patches may be a plurality of carbon nanotubes. The optical coating is formed on a substrate between patches of the gettering agent.
摘要翻译：本文描述了在EUV光学器件的表面中制造污染物吸收材料的方法。对光学元件进行图案化，并且在光学元件的表面上形成污染物吸收材料。在一个实施例中，光致抗蚀剂沉积在光学元件上的光学涂层上。在光学涂层中形成沟槽。吸光剂形成在光致抗蚀剂上的沟槽中。接下来，从光学涂层去除光致抗蚀剂以暴露沟槽中的吸杂剂。对于另一个实施例，在光学元件的指定区域中形成具有吸气剂的纳米管森林的贴片。补片的吸气剂可以是多个碳纳米管。该光学涂层形成在吸气剂的贴片之间的衬底上。

4. 发明申请

US20150171010A1 SELF-ALIGNED VIA AND PLUG PATTERNING WITH PHOTOBUCKETS FOR BACK END OF LINE (BEOL) INTERCONNECTS 有权
标题翻译：自动对准通过与背光源（BEOL）互连的光电放大器
公开(公告)号：US20150171010A1
公开(公告)日：2015-06-18
申请号：US14133385
申请日：2013-12-18
申请人： Robert L. Bristol , Kevin Lin , Kanwal Jit Singh , Alan M. Myers , Richard E. Schenker
发明人： Robert L. Bristol , Kevin Lin , Kanwal Jit Singh , Alan M. Myers , Richard E. Schenker
IPC分类号： H01L23/522 , H01L21/027 , H01L21/311 , H01L21/768
CPC分类号： H01L21/76897 , H01L21/0274 , H01L21/31111 , H01L21/31144 , H01L21/76802 , H01L21/76808 , H01L21/76816 , H01L21/76825 , H01L23/522 , H01L23/5226 , H01L23/5329 , H01L2924/0002 , H01L2924/00
摘要： Self-aligned via and plug patterning with photobuckets for back end of line (BEOL) interconnects is described. In an example, an interconnect structure for an integrated circuit includes a first layer of the interconnect structure disposed above a substrate, the first layer having a first grating of alternating metal lines and dielectric lines in a first direction. The dielectric lines have an uppermost surface higher than an uppermost surface of the metal lines. The integrated circuit also includes a second layer of the interconnect structure disposed above the first layer of the interconnect structure. The second layer includes a second grating of alternating metal lines and dielectric lines in a second direction, perpendicular to the first direction. The dielectric lines have a lowermost surface lower than a lowermost surface of the metal lines of the second grating. The dielectric lines of the second grating overlap and contact, but are distinct from, the dielectric lines of the first grating. The integrated circuit also includes a region of dielectric material disposed between the metal lines of the first grating and the metal lines of the second grating, and in a same plane as upper portions of the dielectric lines of the first grating and lower portions of the dielectric lines of the second grating. The region of dielectric material is composed of a cross-linked photolyzable material.
摘要翻译：描述了用于后端（BEOL）互连的带有光触点的自对准通孔和插头图案。在一个示例中，用于集成电路的互连结构包括设置在衬底上方的互连结构的第一层，第一层具有在第一方向上交替的金属线和介质线的第一光栅。介质线具有高于金属线的最上表面的最上表面。集成电路还包括布置在互连结构的第一层之上的互连结构的第二层。第二层包括垂直于第一方向的第二方向的交替金属线和介质线的第二光栅。介质线具有比第二光栅的金属线的最下表面低的最低表面。第二光栅的介质线与第一光栅的介质线重叠并接触，但不同。集成电路还包括设置在第一光栅的金属线和第二光栅的金属线之间的电介质材料区域，并且在与第一光栅的介质线的上部和电介质的下部相同的平面中第二光栅的线。介电材料的区域由交联的可光致发光材料组成。

5. 发明授权

US09041217B1 Self-aligned via patterning with multi-colored photobuckets for back end of line (BEOL) interconnects 有权
标题翻译：通过用于后端（BEOL）互连的多色photobuckets进行图案化自对准
公开(公告)号：US09041217B1
公开(公告)日：2015-05-26
申请号：US14133344
申请日：2013-12-18
申请人： Robert L. Bristol , James M. Blackwell , Alan M. Myers , Kanwal Jit Singh
发明人： Robert L. Bristol , James M. Blackwell , Alan M. Myers , Kanwal Jit Singh
IPC分类号： H01L23/522 , H01L21/768
CPC分类号： H01L21/0338 , H01L21/0332 , H01L21/0335 , H01L21/0337 , H01L21/31144 , H01L21/76801 , H01L21/76808 , H01L21/76811 , H01L21/76813 , H01L21/76816 , H01L21/76897 , H01L23/5226 , H01L23/528 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： Self-aligned via patterning with multi-colored photobuckets for back end of line (BEOL) interconnects is described. In an example, an interconnect structure for an integrated circuit includes a first layer of the interconnect structure disposed above a substrate, the first layer including a first grating of alternating metal lines and dielectric lines in a first direction. The dielectric lines have an uppermost surface higher than an uppermost surface of the metal lines. A second layer of the interconnect structure is disposed above the first layer of the interconnect structure, the second layer including a second grating of alternating metal lines and dielectric lines in a second direction, perpendicular to the first direction. The dielectric lines have a lowermost surface lower than a lowermost surface of the metal lines of the second grating. The dielectric lines of the second grating overlap and contact, but are distinct from, the dielectric lines of the first grating. First and second dielectric regions are disposed between the metal lines of the first grating and the metal lines of the second grating, and in a same plane as upper portions of the dielectric lines of the first grating and lower portions of the dielectric lines of the second grating. The first dielectric region is composed of a first cross-linked photolyzable material, and the second dielectric region is composed of a second, different, cross-linked photolyzable material.
摘要翻译：描述了通过用于后端（BEOL）互连的多色photobuckets图案化的自对准。在一个示例中，用于集成电路的互连结构包括布置在衬底上方的互连结构的第一层，第一层包括在第一方向上交替的金属线和介质线的第一光栅。介质线具有高于金属线的最上表面的最上表面。所述互连结构的第二层设置在所述互连结构的所述第一层上方，所述第二层包括垂直于所述第一方向的第二方向的交替金属线和介质线的第二光栅。介质线具有比第二光栅的金属线的最下表面低的最低表面。第二光栅的介质线与第一光栅的介质线重叠并接触，但不同。第一和第二电介质区域设置在第一光栅的金属线和第二光栅的金属线之间，并且在与第一光栅的介电线的上部和第二栅的介电线的下部相同的平面中光栅。第一电介质区域由第一交联光可光化材料组成，第二电介质区域由第二不同的交联光可光化材料组成。

6. 发明授权

US09548269B2 Diagonal hardmasks for improved overlay in fabricating back end of line (BEOL) interconnects 有权
标题翻译：对角线硬掩模，用于在制造后端线（BEOL）互连中改进覆盖层
公开(公告)号：US09548269B2
公开(公告)日：2017-01-17
申请号：US14931175
申请日：2015-11-03
申请人： Alan M. Myers , Kanwal Jit Singh , Robert L. Bristol , Jasmeet S. Chawla
发明人： Alan M. Myers , Kanwal Jit Singh , Robert L. Bristol , Jasmeet S. Chawla
IPC分类号： H01L29/40 , H01L23/522 , H01L21/768 , H01L21/033 , H01L23/528 , H01L21/311
CPC分类号： H01L23/5226 , H01L21/0337 , H01L21/31144 , H01L21/76808 , H01L21/76816 , H01L21/76879 , H01L21/76883 , H01L21/76897 , H01L23/528 , H01L2924/0002 , H01L2924/00
摘要： Self-aligned via and plug patterning using diagonal hardmasks for improved overlay in fabricating back end of line (BEOL) interconnects is described. In an example, a method of fabricating an interconnect structure for an integrated circuit involves forming a first hardmask layer above an interlayer dielectric layer disposed above a substrate. The first hardmask layer includes a plurality of first hardmask lines having a first grating in a first direction and comprising one or more sacrificial materials interleaved with the first grating. The method also involves forming a second hardmask layer above the first hardmask layer. The second hardmask layer includes a plurality of second hardmask lines having a second grating in a second direction, diagonal to the first direction. The method also involves, using the second hardmask layer as a mask, etching the first hardmask layer to form a patterned first hardmask layer. The etching involves removing a portion of the one or more sacrificial materials.
摘要翻译：描述了使用对角线硬掩模进行自对准通孔和插头图案，以改进制造后端（BEOL）互连的覆盖。在一个示例中，制造用于集成电路的互连结构的方法包括在布置在衬底上方的层间介电层上形成第一硬掩模层。第一硬掩模层包括多个第一硬掩模线，其具有在第一方向上的第一光栅并且包括与第一光栅交错的一个或多个牺牲材料。该方法还涉及在第一硬掩模层之上形成第二硬掩模层。第二硬掩模层包括多个第二硬掩模线，所述第二硬掩模线在第二方向上具有与第一方向对角的第二光栅。该方法还涉及使用第二硬掩模层作为掩模，蚀刻第一硬掩模层以形成图案化的第一硬掩模层。蚀刻涉及去除一个或多个牺牲材料的一部分。

7. 发明申请

US20150179513A1 DIAGONAL HARDMASKS FOR IMPROVED OVERLAY IN FABRICATING BACK END OF LINE (BEOL) INTERCONNECTS 有权
标题翻译：用于改进线路（BEOL）互连的后端改进的对角线
公开(公告)号：US20150179513A1
公开(公告)日：2015-06-25
申请号：US14137588
申请日：2013-12-20
申请人： Alan M. Myers , Kanwal Jit Singh , Robert L. Bristol , Jasmeet S. Chawla
发明人： Alan M. Myers , Kanwal Jit Singh , Robert L. Bristol , Jasmeet S. Chawla
IPC分类号： H01L21/768 , H01L23/522 , H01L23/528 , H01L21/033
CPC分类号： H01L23/5226 , H01L21/0337 , H01L21/31144 , H01L21/76808 , H01L21/76816 , H01L21/76879 , H01L21/76883 , H01L21/76897 , H01L23/528 , H01L2924/0002 , H01L2924/00
摘要： Self-aligned via and plug patterning using diagonal hardmasks for improved overlay in fabricating back end of line (BEOL) interconnects is described. In an example, a method of fabricating an interconnect structure for an integrated circuit involves forming a first hardmask layer above an interlayer dielectric layer disposed above a substrate. The first hardmask layer includes a plurality of first hardmask lines having a first grating in a first direction and comprising one or more sacrificial materials interleaved with the first grating. The method also involves forming a second hardmask layer above the first hardmask layer. The second hardmask layer includes a plurality of second hardmask lines having a second grating in a second direction, diagonal to the first direction. The method also involves, using the second hardmask layer as a mask, etching the first hardmask layer to form a patterned first hardmask layer. The etching involves removing a portion of the one or more sacrificial materials.
摘要翻译：描述了使用对角线硬掩模进行自对准通孔和插头图案，以改进制造后端（BEOL）互连的覆盖。在一个示例中，制造用于集成电路的互连结构的方法包括在布置在衬底上方的层间介电层上形成第一硬掩模层。第一硬掩模层包括多个第一硬掩模线，其具有在第一方向上的第一光栅，并且包括与第一光栅交错的一个或多个牺牲材料。该方法还涉及在第一硬掩模层之上形成第二硬掩模层。第二硬掩模层包括多个第二硬掩模线，所述第二硬掩模线在第二方向上具有与第一方向对角的第二光栅。该方法还涉及使用第二硬掩模层作为掩模，蚀刻第一硬掩模层以形成图案化的第一硬掩模层。蚀刻涉及去除一个或多个牺牲材料的一部分。

8. 发明申请

US20150171009A1 SELF-ALIGNED VIA PATTERNING WITH MULTI-COLORED PHOTOBUCKETS FOR BACK END OF LINE (BEOL) INTERCONNECTS 有权
公开(公告)号：US20150171009A1
公开(公告)日：2015-06-18
申请号：US14133344
申请日：2013-12-18
申请人： Robert L. Bristol , James M. Blackwell , Alan M. Myers , Kanwal Jit Singh
发明人： Robert L. Bristol , James M. Blackwell , Alan M. Myers , Kanwal Jit Singh
IPC分类号： H01L23/522 , H01L21/768
CPC分类号： H01L21/0338 , H01L21/0332 , H01L21/0335 , H01L21/0337 , H01L21/31144 , H01L21/76801 , H01L21/76808 , H01L21/76811 , H01L21/76813 , H01L21/76816 , H01L21/76897 , H01L23/5226 , H01L23/528 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： Self-aligned via patterning with multi-colored photobuckets for back end of line (BEOL) interconnects is described. In an example, an interconnect structure for an integrated circuit includes a first layer of the interconnect structure disposed above a substrate, the first layer including a first grating of alternating metal lines and dielectric lines in a first direction. The dielectric lines have an uppermost surface higher than an uppermost surface of the metal lines. A second layer of the interconnect structure is disposed above the first layer of the interconnect structure, the second layer including a second grating of alternating metal lines and dielectric lines in a second direction, perpendicular to the first direction. The dielectric lines have a lowermost surface lower than a lowermost surface of the metal lines of the second grating. The dielectric lines of the second grating overlap and contact, but are distinct from, the dielectric lines of the first grating. First and second dielectric regions are disposed between the metal lines of the first grating and the metal lines of the second grating, and in a same plane as upper portions of the dielectric lines of the first grating and lower portions of the dielectric lines of the second grating. The first dielectric region is composed of a first cross-linked photolyzable material, and the second dielectric region is composed of a second, different, cross-linked photolyzable material.

9. 发明申请

US20160172237A1 NON-LITHOGRAPHICALLY PATTERNED DIRECTED SELF ASSEMBLY ALIGNMENT PROMOTION LAYERS 有权
公开(公告)号：US20160172237A1
公开(公告)日：2016-06-16
申请号：US14778562
申请日：2013-06-27
申请人： Robert L. Bristol , Rami HOURANI , Eungnak HAN , James M. BLACKWELL
发明人： Robert L. Bristol , Rami HOURANI , Eungnak HAN , James M. BLACKWELL
IPC分类号： H01L21/768 , H01L23/532 , H01L23/528 , H01L21/02 , H01L21/311
CPC分类号： H01L21/76897 , B81C1/00031 , B81C2201/0149 , H01L21/02118 , H01L21/0271 , H01L21/31051 , H01L21/31127 , H01L21/76822 , H01L21/76834 , H01L23/528 , H01L23/5328 , H01L23/5329 , H01L2924/0002 , H01L2924/00
摘要： A method of an aspect includes forming a directed self assembly alignment promotion layer over a surface of a substrate having a first patterned region and a second patterned region. A first directed self assembly alignment promotion material is formed selectively over the first patterned region without using lithographic patterning. The method also includes forming an assembled layer over the directed self assembly alignment promotion layer by directed self assembly. A plurality of assembled structures are formed that each include predominantly a first type of polymer over the first directed self assembly alignment promotion material. The assembled structures are each adjacently surrounded by predominantly a second different type of polymer over the second patterned region. The first directed self assembly alignment promotion material has a greater chemical affinity for the first type of polymer than for the second different type of polymer.

10. 发明授权

US09236342B2 Self-aligned via and plug patterning with photobuckets for back end of line (BEOL) interconnects 有权
标题翻译：自对准通孔和插头图案化，用于后端（BEOL）互连的光触点
公开(公告)号：US09236342B2
公开(公告)日：2016-01-12
申请号：US14133385
申请日：2013-12-18
申请人： Robert L. Bristol , Kevin Lin , Kanwal Jit Singh , Alan M. Myers , Richard E. Schenker
发明人： Robert L. Bristol , Kevin Lin , Kanwal Jit Singh , Alan M. Myers , Richard E. Schenker
IPC分类号： H01L21/311 , H01L23/522 , H01L21/768 , H01L21/027 , H01L23/532
CPC分类号： H01L21/76897 , H01L21/0274 , H01L21/31111 , H01L21/31144 , H01L21/76802 , H01L21/76808 , H01L21/76816 , H01L21/76825 , H01L23/522 , H01L23/5226 , H01L23/5329 , H01L2924/0002 , H01L2924/00
摘要： Self-aligned via and plug patterning with photobuckets for back end of line (BEOL) interconnects is described. In an example, an interconnect structure for an integrated circuit includes a first layer of the interconnect structure disposed above a substrate, the first layer having a first grating of alternating metal lines and dielectric lines in a first direction. The dielectric lines have an uppermost surface higher than an uppermost surface of the metal lines. The integrated circuit also includes a second layer of the interconnect structure disposed above the first layer of the interconnect structure. The second layer includes a second grating of alternating metal lines and dielectric lines in a second direction, perpendicular to the first direction. The dielectric lines have a lowermost surface lower than a lowermost surface of the metal lines of the second grating. The dielectric lines of the second grating overlap and contact, but are distinct from, the dielectric lines of the first grating. The integrated circuit also includes a region of dielectric material disposed between the metal lines of the first grating and the metal lines of the second grating, and in a same plane as upper portions of the dielectric lines of the first grating and lower portions of the dielectric lines of the second grating. The region of dielectric material is composed of a cross-linked photolyzable material.
摘要翻译：描述了用于后端（BEOL）互连的带有光触点的自对准通孔和插头图案。在一个示例中，用于集成电路的互连结构包括设置在衬底上方的互连结构的第一层，第一层具有在第一方向上交替的金属线和介质线的第一光栅。介质线具有高于金属线的最上表面的最上表面。集成电路还包括布置在互连结构的第一层之上的互连结构的第二层。第二层包括垂直于第一方向的第二方向的交替金属线和介质线的第二光栅。介质线具有比第二光栅的金属线的最下表面低的最低表面。第二光栅的介质线与第一光栅的介质线重叠并接触，但不同。集成电路还包括设置在第一光栅的金属线和第二光栅的金属线之间的电介质材料区域，并且在与第一光栅的介质线的上部和电介质的下部相同的平面中第二光栅的线。介电材料的区域由交联的可光致发光材料组成。

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