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1. 发明授权

US5715268A Laser amplifiers with suppressed self oscillation 失效
标题翻译：激光放大器抑制自振荡
公开(公告)号：US5715268A
公开(公告)日：1998-02-03
申请号：US724374
申请日：1996-10-01
申请人： Robert J. Lang , David F. Welch , Ross A. Parke , Donald R. Scifres
发明人： Robert J. Lang , David F. Welch , Ross A. Parke , Donald R. Scifres
IPC分类号： H01S5/026 , H01S5/06 , H01S5/0625 , H01S5/10 , H01S5/20 , H01S5/50 , H01S3/18
CPC分类号： H01S5/50 , H01S5/026 , H01S5/0608 , H01S5/06256 , H01S5/1064 , H01S5/20
摘要： A travelling-wave semiconductor laser amplifier having suppressed self-oscillation is provided. When incorporated into a master oscillator power amplifier device, such a device has improved light output versus amplifier current characteristics. Also provided is a method for suppressing self-oscillation in travelling-wave semiconductor laser amplifier structures for improving the characteristics of the device into which the amplifier is incorporated.
摘要翻译：提供抑制自振荡的行波半导体激光放大器。当结合到主振荡器功率放大器装置中时，这种装置对于放大器电流特性具有改进的光输出。还提供了一种用于抑制行波半导体激光放大器结构中的自振荡的方法，用于改善放大器并入其中的器件的特性。

2. 发明授权

US5539571A Differentially pumped optical amplifer and mopa device 失效
标题翻译：差分泵浦光学放大器和mopa器件
公开(公告)号：US5539571A
公开(公告)日：1996-07-23
申请号：US202359
申请日：1994-02-28
申请人： David F. Welch , Donald R. Scifres , Robert G. Waarts , David G. Mehuys , Amos A. Hardy , Ross A. Parke
发明人： David F. Welch , Donald R. Scifres , Robert G. Waarts , David G. Mehuys , Amos A. Hardy , Ross A. Parke
IPC分类号： H01S5/026 , H01S5/042 , H01S5/062 , H01S5/10 , H01S5/12 , H01S5/125 , H01S5/16 , H01S5/187 , H01S5/20 , H01S5/50 , H01S3/00
CPC分类号： H01S5/0425 , H01S5/026 , H01S5/20 , H01S5/50 , H01S2301/163 , H01S2301/166 , H01S5/0267 , H01S5/0422 , H01S5/06243 , H01S5/1014 , H01S5/1053 , H01S5/1064 , H01S5/1085 , H01S5/12 , H01S5/125 , H01S5/16 , H01S5/187 , H01S5/2036 , H01S5/5018
摘要： An optical amplifier semiconductor device which is differentially pumped and a master oscillator power amplifier (MOPA) device employing such an amplifier. The amplifier allows the light propagating therein to diverge along at least part of its length, and may be a flared amplifier having a gain region that increases in width toward its output at a rate that equals or exceeds the divergence of the light. The amplifier is pumped with a current density at its input end which is smaller than the current density used to pump the output end for maintaining coherence of the beam to high power levels. Differential pumping may be both longitudinal and lateral within the amplifier. A single mode preamplifier section may be optically coupled to the input end of the amplifier. The amplifier input may have a width which is the same as or wider than that of the preamplifier output. The preamplifier may have a constant mode width or may be tapered to alter the divergence of the beams provided to the amplifier section. The laser oscillator in the MOPA device may be a single mode DBR laser diode monolithically integrated on the same substrate as the optical amplifier. Laser sources external to an amplifier chip may also be used. The input portion of the amplifier or the preamplifier section, if present, may be modulated. The laser oscillator might also be modulated if it has a high Q cavity. Tunable laser oscillators are also disclosed.
摘要翻译：差分泵浦的光放大器半导体器件和采用这种放大器的主振荡器功率放大器（MOPA）器件。放大器允许其中传播的光沿其长度的至少一部分发散，并且可以是具有增益区域的扩张放大器，该增益区域以等于或超过光的发散度的速率朝向其输出增加。放大器在其输入端以电流密度泵送，该电流密度小于用于泵浦输出端的电流密度，以将光束的相干性保持在高功率水平。差分泵浦可以在放大器内部纵向和横向两者。单模前置放大器部分可以光耦合到放大器的输入端。放大器输入可以具有与前置放大器输出的宽度相同或更宽的宽度。前置放大器可以具有恒定的模式宽度，或者可以是锥形的，以改变提供给放大器部分的光束的发散度。 MOPA器件中的激光振荡器可以是单模DBR激光二极管，其单片集成在与光放大器相同的衬底上。还可以使用放大器芯片外部的激光源。放大器或前置放大器部分的输入部分（如果存在）可以被调制。如果激光振荡器具有高Q腔，则也可能会被调制。还公开了可调谐激光振荡器。

3. 发明授权

US5793521A Differentially patterned pumped optical semiconductor gain media 失效
标题翻译：差分图案泵浦光学半导体增益介质
公开(公告)号：US5793521A
公开(公告)日：1998-08-11
申请号：US684786
申请日：1996-07-22
申请人： Stephen O'Brien , Alexander Schoenfelder , Robert J. Lang , Amos A. Hardy , Ross A. Parke , David F. Welch
发明人： Stephen O'Brien , Alexander Schoenfelder , Robert J. Lang , Amos A. Hardy , Ross A. Parke , David F. Welch
IPC分类号： H01S5/026 , H01S5/042 , H01S5/062 , H01S5/10 , H01S5/12 , H01S5/125 , H01S5/16 , H01S5/187 , H01S5/20 , H01S5/50 , H01S3/00
CPC分类号： H01S5/026 , H01S5/0425 , H01S5/20 , H01S5/50 , H01S2301/163 , H01S2301/166 , H01S5/0267 , H01S5/0422 , H01S5/06243 , H01S5/1014 , H01S5/1053 , H01S5/1064 , H01S5/1085 , H01S5/12 , H01S5/125 , H01S5/16 , H01S5/187 , H01S5/2036 , H01S5/5018
摘要： An optical gain medium comprising, for example, an optical semiconductor device which is differentially pumped and a master oscillator power amplifier (MOPA) device employing such an amplifier. The gain medium may have a linear stripe region or a diverging stripe region that allows the light propagating therein to diverge along at least part of its length, such as a flared or tapered amplifier having a gain region that increases in width toward its output at a rate that equals or exceeds the divergence of the light. The amplifier is pumped with a current density at its input end which is smaller than the current density used to pump the output end for maintaining coherence of the beam to high power levels employing differential pumping. Differential pumping may be both longitudinal and lateral within the amplifier and may be patterned to reduce the peak modal gain observed longitudinally along and/or laterally across the pumped stripe region of the gain medium so that he experienced modal gain of the propagating light is more balanced along the length of the stripe region, i.e., rendered significantly more uniform in distribution, providing for higher diffraction limited performance without optical filamentation formation.
摘要翻译：一种光增益介质，包括例如差分泵浦的光半导体器件和使用这种放大器的主振荡器功率放大器（MOPA）器件。增益介质可以具有线性条纹区域或发散条纹区域，其允许其中传播的光沿着其长度的至少一部分发散，例如具有增大区域的扩张区域或锥形放大器，该增宽区域在宽度方向上朝向其输出端等于或超过光的分歧。放大器在其输入端以电流密度泵送，该电流密度小于用于泵浦输出端的电流密度，以便通过差分泵浦将光束的相干保持为高功率电平。差分泵浦可以在放大器内纵向和横向两者，并且可以被图案化以减少在增益介质的泵浦条带区域沿纵向和/或横向观察到的峰值模态增益，使得他经历了传播光的模态增益更均衡沿着条纹区域的长度，即在分布中显着地更均匀地提供，从而提供更高的衍射限制性能，而不需要光学成丝形成。

4. 发明授权

US06181721B2 Visible wavelength, semiconductor optoelectronic device with a high power broad, significantly laterally uniform, diffraction limited output beam 失效
$Visible wavelength, semiconductor optoelectronic device with a high power broad, significantly laterally uniform, diffraction limited output beam$
标题翻译：可见波长，半导体光电器件具有功率大，横向均匀，衍射极限输出光束
公开(公告)号：US06181721B2
公开(公告)日：2001-01-30
申请号：US08650704
申请日：1996-05-20
申请人： Randall S. Geels , Ross A. Parke , David F. Welch
发明人： Randall S. Geels , Ross A. Parke , David F. Welch
IPC分类号： H01S319
CPC分类号： B82Y20/00 , H01S5/0425 , H01S5/0625 , H01S5/0658 , H01S5/10 , H01S5/1021 , H01S5/1025 , H01S5/1053 , H01S5/1064 , H01S5/1089 , H01S5/12 , H01S5/2036 , H01S5/2059 , H01S5/2063 , H01S5/2231 , H01S5/3211 , H01S5/3215 , H01S5/32325 , H01S5/34326 , H01S2301/18
摘要： A Group III-V semiconductor optoelectronic device provides for visible wavelength light output having a more laterally uniform, high power beam profile, albeit still quasi-Gaussian. A number of factors contribute to the enhanced profile including an improvement in reducing band offset of the Group III-V deposited layers improving carrier density through a decrease in the voltage drop require to generate carrier flow; reduction of contaminants in the growth of Group III-V AlGaInP-containing layers with compositional Al, providing for quality material necessary to achieve operation at the desired visible wavelengths; the formation of an optical resonator cavity that provides, in part, weak waveguiding of the propagating light; and the utilization of a mechanism to provide for beam spreading and filing in a beam diverging gain section prior to actively aggressive gain pumping of the propagating light in the device.
摘要翻译： III-V族半导体光电子器件提供具有更横向均匀的高功率光束分布的可见波长光输出，尽管仍然是准高斯。许多因素有助于增强轮廓，包括通过减少需要产生载流子的压降降低III-V族沉积层的带偏移来改善载流子密度; 在组成Al的III-V族AlGaInP层的生长中减少污染物，提供实现在所需可见波长下操作所需的优质材料; 光学谐振腔的形成部分地提供传播光的弱波导; 以及在对装置内的传播光进行积极的增益泵浦之前利用一种机构来在光束发散增益部分中提供光束扩展和归档。

5. 发明授权

US6148013A Visible wavelength, semiconductor optoelectronic device with a high power broad, significantly laterally uniform, diffraction limited output beam 有权
$Visible wavelength, semiconductor optoelectronic device with a high power broad, significantly laterally uniform, diffraction limited output beam$
标题翻译：可见波长，半导体光电器件具有功率大，横向均匀，衍射极限输出光束
公开(公告)号：US6148013A
公开(公告)日：2000-11-14
申请号：US227908
申请日：1999-01-08
申请人： Randall S. Geels , Ross A. Parke , David F. Welch
发明人： Randall S. Geels , Ross A. Parke , David F. Welch
IPC分类号： H01S5/042 , H01S5/0625 , H01S5/065 , H01S5/10 , H01S5/12 , H01S5/20 , H01S5/223 , H01S5/32 , H01S5/323 , H01S5/343 , H01S3/085
CPC分类号： B82Y20/00 , H01S5/10 , H01S2301/18 , H01S5/0425 , H01S5/0625 , H01S5/0658 , H01S5/1021 , H01S5/1025 , H01S5/1053 , H01S5/1064 , H01S5/1089 , H01S5/12 , H01S5/2036 , H01S5/2059 , H01S5/2063 , H01S5/2231 , H01S5/3211 , H01S5/3215 , H01S5/32325 , H01S5/34326
摘要： A Group III-V semiconductor optoelectronic device provides for visible wavelength light output having a more laterally uniform, high power beam profile, albeit still quasi-Gaussian. A number of factors contribute to the enhanced profile including an improvement in reducing band offset of the Group III-V deposited layers improving carrier density through a decrease in the voltage drop require to generate carrier flow; reduction of contaminants in the growth of Group III-V AlGaInP-containing layers with compositional Al, providing for quality material necessary to achieve operation at the desired visible wavelengths; the formation of an optical resonator cavity that provides, in part, weak waveguiding of the propagating light; and the utilization of a mechanism to provide for beam spreading and filing in a beam diverging gain section prior to actively aggressive gain pumping of the propagating light in the device.
摘要翻译： III-V族半导体光电子器件提供具有更横向均匀的高功率光束分布的可见波长光输出，尽管仍然是准高斯。许多因素有助于增强轮廓，包括通过减少需要产生载流子的压降降低III-V族沉积层的带偏移来改善载流子密度; 在组成Al的III-V族AlGaInP层的生长中减少污染物，提供实现在所需可见波长下操作所需的优质材料; 光学谐振腔的形成部分地提供传播光的弱波导; 以及在对装置内的传播光进行积极的增益泵浦之前利用一种机构来在光束发散增益部分中提供光束扩展和归档。

6. 发明授权

US06272162B1 Visible wavelength, semiconductor optoelectronic device with a high power broad, significantly laterally uniform, diffraction limited output beam 失效
$Visible wavelength, semiconductor optoelectronic device with a high power broad, significantly laterally uniform, diffraction limited output beam$
公开(公告)号：US06272162B1
公开(公告)日：2001-08-07
申请号：US09705479
申请日：2000-11-02
申请人： Randall S. Geels , Ross A. Parke , David F. Welch
发明人： Randall S. Geels , Ross A. Parke , David F. Welch
IPC分类号： H01S520
CPC分类号： B82Y20/00 , H01S5/0425 , H01S5/0625 , H01S5/0658 , H01S5/10 , H01S5/1021 , H01S5/1025 , H01S5/1053 , H01S5/1064 , H01S5/1089 , H01S5/12 , H01S5/2036 , H01S5/2059 , H01S5/2063 , H01S5/2231 , H01S5/3211 , H01S5/3215 , H01S5/32325 , H01S5/34326 , H01S2301/18
摘要： A Group III-V semiconductor optoelectronic device provides for visible wavelength light output having a more laterally uniform, high power beam profile, albeit still quasi-Gaussian. A number of factors contribute to the enhanced profile including an improvement in reducing band offset of the Group III-V deposited layers improving carrier density through a decrease in the voltage drop require to generate carrier flow; reduction of contaminants in the growth of Group III-V AlGaInP-containing layers with compositional Al, providing for quality material necessary to achieve operation at the desired visible wavelengths; the formation of an optical resonator cavity that provides, in part, weak waveguiding of the propagating light; and the utilization of a mechanism to provide for beam spreading and filing in a beam diverging gain section prior to actively aggressive gain pumping of the propagating light in the device.

7. 发明授权

US6148014A Visible wavelength semiconductor optoelectronic device with a high power broad, significantly laterally uniform, diffraction limited output beam 有权
$Visible wavelength semiconductor optoelectronic device with a high power broad, significantly laterally uniform, diffraction limited output beam$
标题翻译：可见波长半导体光电子器件具有高功率宽，显着横向均匀，衍射限制输出光束
公开(公告)号：US6148014A
公开(公告)日：2000-11-14
申请号：US231545
申请日：1999-01-14
申请人： Randall S. Geels , Ross A. Parke , David F. Welch
发明人： Randall S. Geels , Ross A. Parke , David F. Welch
IPC分类号： H01S5/042 , H01S5/0625 , H01S5/065 , H01S5/10 , H01S5/12 , H01S5/20 , H01S5/223 , H01S5/32 , H01S5/323 , H01S5/343 , H01S3/085
CPC分类号： B82Y20/00 , H01S5/10 , H01S2301/18 , H01S5/0425 , H01S5/0625 , H01S5/0658 , H01S5/1021 , H01S5/1025 , H01S5/1053 , H01S5/1064 , H01S5/1089 , H01S5/12 , H01S5/2036 , H01S5/2059 , H01S5/2063 , H01S5/2231 , H01S5/3211 , H01S5/3215 , H01S5/32325 , H01S5/34326
摘要： A Group III-V semiconductor optoelectronic device provides for visible wavelength light output having a more laterally uniform, high power beam profile, albeit still quasi-Gaussian. A number of factors contribute to the enhanced profile including an improvement in reducing band offset of the Group III-V deposited layers improving carrier density through a decrease in the voltage drop required to generate carrier flow; reduction of contaminants in the growth of Group III-V AlGaInP-containing layers with compositional Al, providing for quality material necessary to achieve operation at the desired visible wavelengths; the formation of an optical resonator cavity that provides, in part, weak waveguiding of the propagating light; and the utilization of a mechanism to provide for beam spreading and filing in a beam diverging gain section prior to actively aggressive gain pumping of the propagating light in the device.
摘要翻译： III-V族半导体光电子器件提供具有更横向均匀的高功率光束分布的可见波长光输出，尽管仍然是准高斯。许多因素有助于增强轮廓，包括通过降低产生载流子流所需的电压降降低III-V族沉积层的带偏移，提高载流子密度; 在组成Al的III-V族AlGaInP层的生长中减少污染物，提供实现在所需可见波长下操作所需的优质材料; 光学谐振腔的形成部分地提供传播光的弱波导; 以及在对装置内的传播光进行积极的增益泵浦之前利用一种机构来在光束发散增益部分中提供光束扩展和归档。

8. 发明授权

US06307873B1 Visible wavelength, semiconductor optoelectronic device with a high power broad, significantly laterally uniform, diffraction limited output beam 失效
$Visible wavelength, semiconductor optoelectronic device with a high power broad, significantly laterally uniform, diffraction limited output beam$
标题翻译：可见波长，半导体光电器件具有功率大，横向均匀，衍射极限输出光束
公开(公告)号：US06307873B1
公开(公告)日：2001-10-23
申请号：US09232020
申请日：1999-01-14
申请人： Randall S. Geels , Ross A. Parke , David F. Welch
发明人： Randall S. Geels , Ross A. Parke , David F. Welch
IPC分类号： H01S520
CPC分类号： B82Y20/00 , H01S5/0425 , H01S5/0625 , H01S5/0658 , H01S5/10 , H01S5/1021 , H01S5/1025 , H01S5/1053 , H01S5/1064 , H01S5/1089 , H01S5/12 , H01S5/2036 , H01S5/2059 , H01S5/2063 , H01S5/2231 , H01S5/3211 , H01S5/3215 , H01S5/32325 , H01S5/34326 , H01S2301/18
摘要： A Group III-V semiconductor optoelectronic device provides for visible wavelength light output having a more laterally uniform, high power beam profile, albeit still quasi-Gaussian. A number of factors contribute to the enhanced profile including an improvement in reducing band offset of the Group III-V deposited layers improving carrier density through a decrease in the voltage drop required to generate carrier flow; reduction of contaminants in the growth of Group III-V AlGaInP-containing layers with compositional Al, providing for quality material necessary to achieve operation at the desired visible wavelengths; the formation of an optical resonator cavity that provides, in part, weak waveguiding of the propagating light; and the utilization of a mechanism to provide for beam spreading and filing in a beam diverging gain section prior to actively aggressive gain pumping of the propagating light in the device.
摘要翻译： III-V族半导体光电子器件提供具有更横向均匀的高功率光束分布的可见波长光输出，尽管仍然是准高斯。许多因素有助于增强轮廓，包括通过降低产生载流子流所需的电压降降低III-V族沉积层的带偏移，提高载流子密度; 在组成Al的III-V族AlGaInP层的生长中减少污染物，提供实现在所需可见波长下操作所需的优质材料; 光学谐振腔的形成部分地提供传播光的弱波导; 以及在对装置内的传播光进行积极的增益泵浦之前利用一种机构来在光束发散增益部分中提供光束扩展和归档。

9. 发明授权

US06816531B1 High-power, kink-free, single mode laser diodes 有权
标题翻译：大功率，无扭结，单模激光二极管
公开(公告)号：US06816531B1
公开(公告)日：2004-11-09
申请号：US09518421
申请日：2000-03-03
申请人： Victor Rossin , Ross A. Parke , Jo S. Major
发明人： Victor Rossin , Ross A. Parke , Jo S. Major
IPC分类号： H01S500
CPC分类号： H01S5/146 , G02B6/30 , G02B6/32 , G02B2006/12097 , H01S3/094003 , H01S5/02415 , H01S5/0652 , H01S5/0655 , H01S5/1064 , H01S2301/18
摘要： A high power, single lateral mode semiconductor laser has a waveguide with regions of different widths coupled by a tapered region. The laser has a laterally confining optical waveguide having a highly reflecting first end and a second end. The optical waveguide has a first portion extending from the first end and a second portion extending from the second end. The first and second portions are coupled by a tapered waveguide. A width of the first portion is less than a width of the second portion. The first portion filters lateral optical modes higher than a fundamental lateral optical mode. An output is emitted from the second end of the optical waveguide.
摘要翻译：高功率，单横向半导体激光器具有波导，其具有通过锥形区域耦合的不同宽度的区域。激光器具有横向限制的光波导，其具有高反射的第一端和第二端。光波导具有从第一端延伸的第一部分和从第二端延伸的第二部分。第一和第二部分通过锥形波导耦合。第一部分的宽度小于第二部分的宽度。第一部分滤除高于基本横向光学模式的横向光学模式。从光波导的第二端发射输出。

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