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    • 4. 发明授权
    • Integrated circuit air bridge structures and methods of fabricating same
    • 集成电路空气桥结构及其制造方法
    • US06211056B1
    • 2001-04-03
    • US09199292
    • 1998-11-24
    • Patrick A. BegleyWilliam R. YoungAnthony L. RivoliJose Avelino DelgadoStephen J. Gaul
    • Patrick A. BegleyWilliam R. YoungAnthony L. RivoliJose Avelino DelgadoStephen J. Gaul
    • H01L214763
    • H01L28/10H01L21/7682H01L23/5221H01L2924/0002H01L2924/00
    • Conductive elements which provide interconnections (air bridges between circuits) and components such as capacitors and inductors may be incorporated in the devices in a manner to reduce parasitic effects in the operation of the devices while providing close spacing which enhances the performance of the devices at high frequency. Separate substrates are provided respectively having the integrated circuits formed therein and covering, preferably sealing the integrated circuits. The air bridge conductive components (interconnections, capacitors or inductors) are formed separately in the covering substrate which is assembled with the substrate having the integrated circuit as a lid which seals and packages the circuits and the conductive element or component contained in the lid. The conductive component may be separated by cavities formed in the lid substrate or in the substrate having the integrated circuit device already formed therein. Assembly may take place at temperatures lower than necessary for fusion bonding and diffusion commonly used in the fabrication of integrated circuits. Bonds which are used may be metal, oxide or plastic (polymer) bonding material.
    • 提供互连(电路之间的空气桥)和诸如电容器和电感器的部件的导电元件可以以减少器件操作中的寄生效应的方式并入器件中,同时提供紧密的间隔,这增强了器件在高处的性能 频率。 分别提供分离的基板,其中形成有集成电路并覆盖,优选地密封集成电路。 空气桥导电部件(互连,电容器或电感器)分别形成在与具有集成电路的基板组装的覆盖基板上,该基板具有密封并封装电路和包含在盖中的导电元件或部件的盖。 导电部件可以由形成在盖基板中的空腔或已经形成有集成电路器件的基板分离。 组装可能发生在集成电路制造中常用的熔接和扩散所需的温度以下。 使用的债​​券可以是金属,氧化物或塑料(聚合物)结合材料。
    • 5. 发明授权
    • Arrangement and method for improving room-temperature testability of
CMOS integrated circuits optimized for cryogenic temperature operation
    • CMOS半导体集成电路室温可测性的优化布置及方法,适用于低温运行
    • US5696452A
    • 1997-12-09
    • US512323
    • 1995-08-08
    • Donald F. HemmenwayJohn T. GasnerWilliam R. Young
    • Donald F. HemmenwayJohn T. GasnerWilliam R. Young
    • G01R31/26
    • G01R31/2621
    • Room temperature-testing of an MOS field effect transistor architecture, whose parameters have been optimized for operation at cryogenic temperatures, is facilitated by applying a prescribed reverse body-to-source voltage bias, that modifies the variation of the drain-to-source current vs. gate-to-source voltage characteristic, so as to shift the gate threshold voltage to a value corresponding to the device operating at its optimally designed cryogenic temperature. The magnitude of this back bias voltage is set at a value which adds to the number of charges required to balance the gate voltage before an inversion condition is achieved. In effect, the back bias causes the depletion layer beneath the gate to be expanded into the body beneath the gate, thereby compensating for what would otherwise be depletion mode operation, if the cryogenically designed MOS device were placed at room temperature. This allows the cryogenic performance of the MOS field effect transistor to be tested at room temperature, thereby substantially reducing manufacturing cost. Upon completion of testing of the circuit to evaluate its performance at cryogenic temperatures, the back-bias is removed, so as to allow normal operation in the circuit's intended cryogenic environment.
    • MOS场效应晶体管架构的室温测试通过施加规定的反向体对电压偏置来实现,其中参数已被优化用于在低温下的操作,该电压修正了漏 - 源电流的变化 与栅极至源极电压特性相对应,以便将栅极阈值电压移动到对应于在其最佳设计的低温温度下工作的器件的值。 该反偏置电压的大小被设定为在实现反转条件之前平衡栅极电压所需的电荷数量的值。 实际上,背偏置导致栅极下面的耗尽层扩展到栅极下方的主体,从而补偿如果将低温设计的MOS器件放置在室温下将是耗尽模式操作。 这允许在室温下测试MOS场效应晶体管的低温性能,从而显着降低制造成本。 在完成电路测试以评估其在低温温度下的性能时,将去除偏压,以便允许在电路预期的低温环境中正常工作。
    • 9. 发明授权
    • Decimating filter
    • 抽奖过滤器
    • US5341335A
    • 1994-08-23
    • US945674
    • 1992-09-15
    • William R. YoungWilliam F. Johnstone
    • William R. YoungWilliam F. Johnstone
    • G06F7/78H03H17/02H03H17/06G11C8/04
    • G06F7/785H03H17/0223H03H17/0621H03H2218/08
    • A decimating memory includes a memory having addressable memory locations. The memory forms a plurality of registers, each of the registers including at least one addressable memory location. The plurality of registers form a forward shifting data section and a reverse shifting data section. A first decoder operates the registers in the forward shifting data section and all but a first of the registers in the reverse shifting data section as FIFO registers via read and write addressing of the addressable memory locations to input and output data samples. The read and write addressing of the addressable memory locations is offset with respect to one another to provide a decimation factor. A paintbrush decoder operates the first register in the reverse shifting data section as a LIFO register for reverse sequencing data samples within blocks of data samples received from the forward shifting data section. Each of the registers in the forward shifting and reverse shifting data sections provide an output. An ALU section operates on the outputs and provides a decimating memory output.
    • 抽取存储器包括具有可寻址存储器位置的存储器。 存储器形成多个寄存器,每个寄存器包括至少一个可寻址存储器位置。 多个寄存器形成前向移位数据部分和反向移位数据部分。 第一解码器通过对可寻址存储器位置的读写寻址来输入和输出数据样本,将前向移位数据段中的寄存器和反向移位数据段中的除第一寄存器之外的所有寄存器作为FIFO寄存器操作。 可寻址存储器位置的读和写寻址相对于彼此偏移以提供抽取因子。 画笔解码器将反向移位数据部分中的第一寄存器操作为用于从前向移位数据部分接收的数据样本块内的反向排序数据样本的LIFO寄存器。 正向和反向移位数据段中的每个寄存器提供输出。 ALU部分对输出进行操作,并提供抽取存储器输出。