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1. 发明申请

US20080153034A1 LOW ACTIVATION ENERGY DISSOLUTION MODIFICATION AGENTS FOR PHOTORESIST APPLICATIONS 失效
标题翻译：低激活能量溶解剂用于光电子学应用的改性剂
公开(公告)号：US20080153034A1
公开(公告)日：2008-06-26
申请号：US12019676
申请日：2008-01-25
申请人： Robert David Allen , Phillip Joe Brock , Richard Anthony DiPietro , Ratnam Sooriyakumaran , Hoa D. Truong
发明人： Robert David Allen , Phillip Joe Brock , Richard Anthony DiPietro , Ratnam Sooriyakumaran , Hoa D. Truong
IPC分类号： G03F7/004
CPC分类号： G03F7/0045 , C07J9/005 , C07J17/00 , G03F7/0392 , Y10S430/106 , Y10S430/11 , Y10S430/111 , Y10S430/115
摘要： A dissolution modification agent suitable for use in a photoresist composition including a polymer, a photoacid generator and casting solvent. The dissolution modification agent is insoluble in aqueous alkaline developer and inhibits dissolution of the polymer in the developer until acid is generated by the photoacid generator being exposed to actinic radiation, whereupon the dissolution modifying agent, at a suitable temperature, becomes soluble in the developer and allows the polymer to dissolve in the developer. The DMAs are glucosides, cholates, citrates and adamantanedicarboxylates protected with acid-labile ethoxyethyl, tetrahydrofuranyl, and angelicalactonyl groups.
摘要翻译：适用于包含聚合物，光致酸产生剂和浇铸溶剂的光致抗蚀剂组合物的溶解改性剂。溶解改性剂不溶于含水碱性显影剂中，并且抑制聚合物在显影剂中的溶解，直至酸被光致酸性发生剂暴露于光化辐射为止，因此溶解改性剂在合适的温度下变得可溶于显影剂，允许聚合物溶解在显影剂中。 DMA是用酸不稳定的乙氧基乙基，四氢呋喃基和天竺葵酰基保护的葡糖苷，胆酸盐，柠檬酸盐和金刚烷二羧酸盐。

2. 发明授权

US07358029B2 Low activation energy dissolution modification agents for photoresist applications 有权
标题翻译：用于光刻胶应用的低活化能溶解改性剂
公开(公告)号：US07358029B2
公开(公告)日：2008-04-15
申请号：US11239507
申请日：2005-09-29
申请人： Robert David Allen , Phillip Joe Brock , Richard Anthony DiPietro , Ratnam Sooriyakumaran , Hoa D. Truong
发明人： Robert David Allen , Phillip Joe Brock , Richard Anthony DiPietro , Ratnam Sooriyakumaran , Hoa D. Truong
IPC分类号： G03F7/039 , G03F7/004 , G03F7/28 , G03F7/38
CPC分类号： G03F7/0045 , C07J9/005 , C07J17/00 , G03F7/0392 , Y10S430/106 , Y10S430/11 , Y10S430/111 , Y10S430/115
摘要： A photoresist composition including a polymer, a photoacid generator and a dissolution modification agent, a method of forming an image using the photoresist composition and the dissolution modification agent composition. The dissolution modification agent is insoluble in aqueous alkaline developer and inhibits dissolution of the polymer in the developer until acid is generated by the photoacid generator being exposed to actinic radiation, whereupon the dissolution modifying agent, at a suitable temperature, becomes soluble in the developer and allows the polymer to dissolve in the developer. The DMAs are glucosides, cholates, citrates and adamantanedicarboxylates protected with acid-labile ethoxyethyl, tetrahydrofuranyl, and angelicalactonyl groups.
摘要翻译：包括聚合物，光致酸产生剂和溶解改性剂的光致抗蚀剂组合物，使用光致抗蚀剂组合物形成图像的方法和溶解改性剂组合物。溶解改性剂不溶于含水碱性显影剂中，并且抑制聚合物在显影剂中的溶解，直至酸被光致酸性发生剂暴露于光化辐射为止，因此溶解改性剂在合适的温度下变得可溶于显影剂，允许聚合物溶解在显影剂中。 DMA是用酸不稳定的乙氧基乙基，四氢呋喃基和天竺葵酰基保护的葡糖苷，胆酸盐，柠檬酸盐和金刚烷二羧酸盐。

3. 发明授权

US07820369B2 Method for patterning a low activation energy photoresist 有权
标题翻译：图案化低活化能光致抗蚀剂的方法
公开(公告)号：US07820369B2
公开(公告)日：2010-10-26
申请号：US10729452
申请日：2003-12-04
申请人： Robert David Allen , Gregory Breyta , Phillip Joe Brock , Richard Anthony DiPietro , Ratnam Sooriyakumaran , Hoa D. Truong , Gregory Michael Wallraff
发明人： Robert David Allen , Gregory Breyta , Phillip Joe Brock , Richard Anthony DiPietro , Ratnam Sooriyakumaran , Hoa D. Truong , Gregory Michael Wallraff
IPC分类号： G03F7/30
CPC分类号： G03F7/0392 , G03F7/0046 , G03F7/0397 , Y10S430/106 , Y10S430/108 , Y10S430/111
摘要： Polymers containing an acetal or ketal linkage and their use in lithographic photoresist compositions, particularly in chemical amplification photoresists, are provided. The polymer is prepared from at least one first olefinic monomer containing an acetal or ketal linkage, the acid-catalyzed cleavage of which renders the polymer soluble in aqueous base; and at least one second olefinic monomer selected from (i) an olefinic monomer containing a pendant fluorinated hydroxyalkyl group RH, (ii) an olefinic monomer containing a pendant fluorinated alkylsulfonamide group RS, and (iii) combinations thereof. The acetal or ketal linkage may be contained within an acid-cleavable substituent RCL in the first olefinic monomer. A method for using the photoresist compositions containing these polymers in preparing a patterned substrate is also provided in which the polymer is rendered soluble in aqueous base at a temperature of less than about 100° C. by acid-catalyzed deprotection of pendent acetal- or ketal-protected carboxylic acid groups.
摘要翻译：提供了含有缩醛或缩酮键的聚合物及其在平版光刻胶组合物中的用途，特别是在化学放大光致抗蚀剂中。聚合物由至少一种含有缩醛或缩酮键的第一烯属单体制备，其酸催化裂解使聚合物可溶于碱水溶液; 和至少一种第二烯烃单体，其选自（i）含有侧氟化羟烷基RH的烯烃单体，（ii）含有侧氟化烷基磺酰胺基RS的烯烃单体，和（iii）其组合。缩醛或缩酮键可以包含在第一烯属单体中的酸可裂解取代基RCL中。还提供了一种使用含有这些聚合物的光致抗蚀剂组合物来制备图案化基材的方法，其中聚合物在低于约100℃的温度下可溶于碱水溶液，通过酸催化的侧链缩醛或缩酮脱保护保护的羧酸基团。

4. 发明授权

US07759044B2 Low activation energy dissolution modification agents for photoresist applications 失效
标题翻译：用于光刻胶应用的低活化能溶解改性剂
公开(公告)号：US07759044B2
公开(公告)日：2010-07-20
申请号：US12019676
申请日：2008-01-25
申请人： Robert David Allen , Phillip Joe Brock , Richard Anthony DiPietro , Ratnam Sooriyakumaran , Hoa D. Truong
发明人： Robert David Allen , Phillip Joe Brock , Richard Anthony DiPietro , Ratnam Sooriyakumaran , Hoa D. Truong
IPC分类号： G03C1/00 , C07D305/00 , C07D307/02 , C07D307/77 , C07D307/00 , C07D493/00 , C07D307/93 , C07C69/74 , C07C69/00
CPC分类号： G03F7/0045 , C07J9/005 , C07J17/00 , G03F7/0392 , Y10S430/106 , Y10S430/11 , Y10S430/111 , Y10S430/115
摘要： A dissolution modification agent suitable for use in a photoresist composition including a polymer, a photoacid generator and casting solvent. The dissolution modification agent is insoluble in aqueous alkaline developer and inhibits dissolution of the polymer in the developer until acid is generated by the photoacid generator being exposed to actinic radiation, whereupon the dissolution modifying agent, at a suitable temperature, becomes soluble in the developer and allows the polymer to dissolve in the developer. The DMAs are glucosides, cholates, citrates and adamantanedicarboxylates protected with acid-labile ethoxyethyl, tetrahydrofuranyl, and angelicalactonyl groups.
摘要翻译：适用于包含聚合物，光致酸产生剂和浇铸溶剂的光致抗蚀剂组合物的溶解改性剂。溶解改性剂不溶于含水碱性显影剂中，并且抑制聚合物在显影剂中的溶解，直至酸被光致酸性发生剂暴露于光化辐射为止，因此溶解改性剂在合适的温度下变得可溶于显影剂，允许聚合物溶解在显影剂中。 DMA是用酸不稳定的乙氧基乙基，四氢呋喃基和天竺葵酰基保护的葡糖苷，胆酸盐，柠檬酸盐和金刚烷二羧酸盐。

5. 发明授权

US07193023B2 Low activation energy photoresists 有权
标题翻译：低活化能光刻胶
公开(公告)号：US07193023B2
公开(公告)日：2007-03-20
申请号：US10729169
申请日：2003-12-04
申请人： Robert David Allen , Gregory Breyta , Phillip Joe Brock , Richard Anthony DiPietro , Ratnam Sooriyakumaran , Hoa D. Truong , Gregory Michael Wallraff
发明人： Robert David Allen , Gregory Breyta , Phillip Joe Brock , Richard Anthony DiPietro , Ratnam Sooriyakumaran , Hoa D. Truong , Gregory Michael Wallraff
IPC分类号： C08F112/68
CPC分类号： G03F7/0046 , G03F7/0397
摘要： Polymers containing an acetal or ketal linkage and their use in lithographic photoresist compositions, particularly in chemical amplification photoresists, are provided. The polymer is prepared from at least one first olefinic monomer containing an acetal or ketal linkage, the acid-catalyzed cleavage of which renders the polymer soluble in aqueous base; and at least one second olefinic monomer selected from (i) an olefinic monomer containing a pendant fluorinated hydroxyalkyl group RH, (ii) an olefinic monomer containing a pendant fluorinated alkylsulfonamide group RS, and (iii) combinations thereof. The acetal or ketal linkage may be contained within an acid-cleavable substituent RCL in the first olefinic monomer. A method for using the photoresist compositions containing these polymers in preparing a patterned substrate is also provided in which the polymer is rendered soluble in aqueous base at a temperature of less than about 100° C. by acid-catalyzed deprotection of pendent acetal- or ketal-protected carboxylic acid groups.
摘要翻译：提供了含有缩醛或缩酮键的聚合物及其在平版光刻胶组合物中的用途，特别是在化学放大光致抗蚀剂中。聚合物由至少一种含有缩醛或缩酮键的第一烯属单体制备，其酸催化裂解使聚合物可溶于碱水溶液; 和至少一种第二烯烃单体，其选自（i）含有侧氟化羟烷基R H的烯烃单体，（ii）含有侧氟化烷基磺酰胺基R S的烯属单体， SUP），和（iii）其组合。缩醛或缩酮键可以包含在第一烯烃单体中的酸可裂解取代基R CL中。还提供了一种使用含有这些聚合物的光致抗蚀剂组合物来制备图案化基材的方法，其中聚合物在低于约100℃的温度下可溶于碱水溶液，通过酸催化的侧链缩醛或缩酮脱保护保护的羧酸基团。

6. 发明授权

US07476492B2 Low activation energy photoresist composition and process for its use 失效
标题翻译：低活化能光刻胶组合物及其使用方法
公开(公告)号：US07476492B2
公开(公告)日：2009-01-13
申请号：US11441965
申请日：2006-05-26
申请人： Robert David Allen , Richard Anthony DiPietro , Ratnam Sooriyakumaran , Hoa D. Truong
发明人： Robert David Allen , Richard Anthony DiPietro , Ratnam Sooriyakumaran , Hoa D. Truong
IPC分类号： G03F7/30 , G03F7/004
CPC分类号： G03F7/0397 , C08F220/18 , C08F220/24 , C08F220/28 , C08F220/60 , G03F7/0046 , G03F7/2041 , Y10S430/108 , Y10S430/111
摘要： The present invention relates to a radiation sensitive photoresist composition. The composition comprises a polymer comprising at least two monomers. The first monomer has an acid cleavable tertiary ester group. The second monomer is an acidic monomer. The acid cleavable ester group of the polymer has a surprisingly low activation energy which results in improved resist images in lithographic processes.
摘要翻译：本发明涉及一种辐射敏感光刻胶组合物。组合物包含包含至少两种单体的聚合物。第一单体具有酸可裂解的叔酯基。第二单体是酸性单体。聚合物的酸可裂解酯基具有惊人的低活化能，这导致光刻工艺中抗蚀剂图像的改善。

7. 发明授权

US08168366B2 Low activation energy photoresist composition and process for its use 有权
标题翻译：低活化能光刻胶组合物及其使用方法
公开(公告)号：US08168366B2
公开(公告)日：2012-05-01
申请号：US12253072
申请日：2008-10-16
申请人： Robert David Allen , Richard Anthony DiPietro , Ratnam Sooriyakumaran , Hoa D Truong
发明人： Robert David Allen , Richard Anthony DiPietro , Ratnam Sooriyakumaran , Hoa D Truong
IPC分类号： G03F7/004 , G03F7/30 , C08F24/00
CPC分类号： G03F7/0397 , C08F220/18 , C08F220/24 , C08F220/28 , C08F220/60 , G03F7/0046 , G03F7/2041 , Y10S430/108 , Y10S430/111
摘要： The present invention relates to a radiation sensitive photoresist composition. The composition comprises a polymer comprising at least two monomers. The first monomer has an acid cleavable tertiary ester group. The second monomer is an acidic monomer. The acid cleavable ester group of the polymer has a surprisingly low activation energy which results in improved resist images in lithographic processes.
摘要翻译：本发明涉及一种辐射敏感光刻胶组合物。组合物包含包含至少两种单体的聚合物。第一单体具有酸可裂解的叔酯基。第二单体是酸性单体。聚合物的酸可裂解酯基具有惊人的低活化能，这导致光刻工艺中抗蚀剂图像的改善。

8. 发明申请

US20110008727A1 Low Activation Energy Photoresist Composition and Process for Its Use 有权
标题翻译：低激活能量光刻胶组合物及其使用方法
公开(公告)号：US20110008727A1
公开(公告)日：2011-01-13
申请号：US12253072
申请日：2008-10-16
申请人： Robert David Allen , Richard Anthony DiPietro , Ratnam Sooriyakumaran , Hoa D. Truong
发明人： Robert David Allen , Richard Anthony DiPietro , Ratnam Sooriyakumaran , Hoa D. Truong
IPC分类号： G03F7/20 , C08F32/08 , C08F24/00 , G03F7/004
CPC分类号： G03F7/0397 , C08F220/18 , C08F220/24 , C08F220/28 , C08F220/60 , G03F7/0046 , G03F7/2041 , Y10S430/108 , Y10S430/111
摘要： The present invention relates to a radiation sensitive photoresist composition. The composition comprises a polymer comprising at least two monomers. The first monomer has an acid cleavable tertiary ester group. The second monomer is an acidic monomer. The acid cleavable ester group of the polymer has a surprisingly low activation energy which results in improved resist images in lithographic processes.
摘要翻译：本发明涉及一种辐射敏感光刻胶组合物。组合物包含包含至少两种单体的聚合物。第一单体具有酸可裂解的叔酯基。第二单体是酸性单体。聚合物的酸可裂解酯基具有惊人的低活化能，这导致光刻工艺中抗蚀剂图像的改善。

9. 发明申请

US20070275324A1 Low activation energy photoresist composition and process for its use 失效
标题翻译：低活化能光刻胶组合物及其使用方法
公开(公告)号：US20070275324A1
公开(公告)日：2007-11-29
申请号：US11441965
申请日：2006-05-26
申请人： Robert David Allen , Richard Anthony DiPietro , Ratnam Sooriyakumaran , Hoa D. Truong
发明人： Robert David Allen , Richard Anthony DiPietro , Ratnam Sooriyakumaran , Hoa D. Truong
IPC分类号： G03C1/00
CPC分类号： G03F7/0397 , C08F220/18 , C08F220/24 , C08F220/28 , C08F220/60 , G03F7/0046 , G03F7/2041 , Y10S430/108 , Y10S430/111
摘要： The present invention relates to a radiation sensitive photoresist composition. The composition comprises a polymer comprising at least two monomers. The first monomer has an acid cleavable tertiary ester group. The second monomer is an acidic monomer. The acid cleavable ester group of the polymer has a surprisingly low activation energy which results in improved resist images in lithographic processes.
摘要翻译：本发明涉及一种辐射敏感光刻胶组合物。组合物包含包含至少两种单体的聚合物。第一单体具有酸可裂解的叔酯基。第二单体是酸性单体。聚合物的酸可裂解酯基具有惊人的低活化能，这导致光刻工艺中抗蚀剂图像的改善。

10. 发明授权

US06444408B1 High silicon content monomers and polymers suitable for 193 nm bilayer resists 有权
标题翻译：适用于193纳米双层抗蚀剂的高硅含量单体和聚合物
公开(公告)号：US06444408B1
公开(公告)日：2002-09-03
申请号：US09514212
申请日：2000-02-28
申请人： Phillip Joe Brock , Richard Anthony DiPietro , Donald Clifford Hofer , Ratnam Sooriyakumaran , Gregory Michael Wallraff
发明人： Phillip Joe Brock , Richard Anthony DiPietro , Donald Clifford Hofer , Ratnam Sooriyakumaran , Gregory Michael Wallraff
IPC分类号： G03F7027
CPC分类号： G03F7/094 , G03F7/0045 , G03F7/0382 , G03F7/0395 , G03F7/0758 , G11B5/3163
摘要： Polymerizable monomers having silicon containing groups that are transparent at 193 nm; and ethylenically unsaturated group are provided. Polymers from these monomers can be used in processes for forming sub-100 nm images with a chemically amplified, radiation sensitive bilayer resist. The bilayer resist is disposed on a substrate and comprises (i) a top imaging layer comprising a radiation sensitive acid generator and (ii) an organic underlayer. The bilayer resist can be used in the manufacturing of integrated circuits.
摘要翻译：在193nm下透明的含硅基团的可聚合单体; 和烯键式不饱和基团。来自这些单体的聚合物可以用于用化学放大的，辐射敏感的双层抗蚀剂形成亚100nm图像的方法。双层抗蚀剂设置在基板上，并且包括（i）包含辐射敏感酸产生器和（ii）有机底层的顶部成像层。双层抗蚀剂可用于集成电路的制造。

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