会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 1. 发明授权
    • Using one memory to supply addresses to an associated memory during
testing
    • 在测试期间使用一个内存来提供地址给相关的内存
    • US5563833A
    • 1996-10-08
    • US398465
    • 1995-03-03
    • Robert D. AdamsJohn ConnorJames J. CovinoRoy C. FlakerGarrett S. KochAlan L. RobertsJose R. SousaLuigi Ternullo, Jr.
    • Robert D. AdamsJohn ConnorJames J. CovinoRoy C. FlakerGarrett S. KochAlan L. RobertsJose R. SousaLuigi Ternullo, Jr.
    • G06F12/16G06F12/08G11C8/10G11C15/00G11C15/04G11C29/00G11C29/02G11C29/10G11C29/12G11C29/56G11C7/00
    • G11C29/12G06F12/0893G11C15/00G11C8/10G11C29/10
    • An associated memory structure having a plurality of memories amenable for testing and a method of testing the memories is provided. First and second memories are formed, wherein data in the first memory provides a basis for at least a portion of the input to the second memory during functional operation of two memories. Preferably, an output latch for receiving the output test data from the first memory is provided. Means are provided for loading the first memory with data which is utilized as a basis for providing at least a portion of the input to the second memory. An access path from the output port of the first memory to the input port of the second memory allows use of the data in the first memory to generate at least a portion of the input to the second memory. The first memory is first tested independently of the second memory. Thereafter, the first memory is loaded with preconditioned data that is used as a basis for inputs to the second memory during testing of the second memory. The second memory is then tested by generating inputs to the first memory during testing of the second memory. Thus, outputs of the first memory constitute at least a portion of test data inputted to the second memory. A latch is provided to capture the output of the test data from the second memory.
    • 提供了具有适于测试的多个存储器的关联存储器结构和测试存储器的方法。 形成第一和第二存储器,其中在两个存储器的功能操作期间,第一存储器中的数据为至少一部分输入提供基础。 优选地,提供用于从第一存储器接收输出测试数据的输出锁存器。 提供了用于将数据加载到第一存储器的装置,该数据被用作将至少一部分输入提供给第二存储器的基础。 从第一存储器的输出端口到第二存储器的输入端口的访问路径允许使用第一存储器中的数据来生成至第二存储器的输入的至少一部分。 第一个内存首先被独立于第二个内存进行测试。 此后,第一存储器加载预测数据,该预处理数据在第二存储器测试期间用作输入到第二存储器的基础。 然后在测试第二个存储器期间通过产生第一个存储器的输入来测试第二个存储器。 因此,第一存储器的输出构成输入到第二存储器的测试数据的至少一部分。 提供锁存器以捕获来自第二存储器的测试数据的输出。
    • 7. 发明授权
    • Method and structure for accessing semi-associative cache memory using
multiple memories to store different components of the address
    • 使用多个存储器访问半关联高速缓冲存储器以存储地址的不同组件的方法和结构
    • US5721863A
    • 1998-02-24
    • US593639
    • 1996-01-29
    • James J. CovinoRoy Childs FlakerAlan Lee RobertsJose Roriz Sousa
    • James J. CovinoRoy Childs FlakerAlan Lee RobertsJose Roriz Sousa
    • G06F12/08G06F12/10
    • G06F12/1054G06F12/0864
    • A structure and method of operation of a cache memory are provided. The cache memory is organized such that the data on a given line of any page of the main memory is stored on the same line of a page of the cache memory. Two address memories are provided, one containing the first eight bits of the virtual address of the page of the data in main memory and the second the entire real page address in main memory. When an address is asserted on the bus, the line component of the address causes each of those lines from the cache memory to read out to a multiplexor. At the same time, the eight bit component of the virtual address is compared in the first memory to the eight bits of each line stored in the first memory, and if a compare is made, the data on that line from that page of cache memory is read to the CPU. Also, the entire real address is compared in the second memory, and if a match does not occur, the data from the cache to the CPU is flagged as invalid data. A structure and method are also provided to determine if duplicate addresses exist in the second address memory.
    • 提供了高速缓冲存储器的操作结构和操作方法。 高速缓冲存储器被组织使得主存储器的任何页面的给定行上的数据被存储在高速缓冲存储器的页面的同一行上。 提供两个地址存储器,一个包含主存储器中的数据页的虚拟地址的前八位,第二个是主存储器中的整个实际页地址。 当总线上的地址被断言时,地址的线路分量使来自高速缓冲存储器的那些线路中的每条线路读出到多路复用器。 同时,将虚拟地址的八位分量在第一存储器中比较到存储在第一存储器中的每一行的八位,如果进行比较,则从高速缓冲存储器页面那一行的数据 被读取到CPU。 而且,在第二存储器中比较整个实际地址,并且如果不发生匹配,则从缓存到CPU的数据被标记为无效数据。 还提供了一种结构和方法来确定在第二地址存储器中是否存在重复的地址。
    • 8. 发明授权
    • DRAM-based separate I/O memory solution for communication applications
    • 基于DRAM的单独I / O存储器解决方案,用于通信应用
    • US06854041B2
    • 2005-02-08
    • US10065839
    • 2002-11-25
    • James J. CovinoKevin G. PetrunichHarold Pilo
    • James J. CovinoKevin G. PetrunichHarold Pilo
    • G11C7/10G11C7/22G11C11/406G11C11/409G06F13/14
    • G11C11/40618G11C7/1042G11C7/22G11C11/406G11C11/409
    • A structure and method for performing back-to-back read and write memory operations to a same DRAM bank comprising articulating between reading data on a first bank during successive first bank read cycles and writing data to a second bank during successive second bank write cycles, cycling between reading data on the second bank during successive second bank read cycles and writing data to the first bank during successive first bank write cycles, and performing a refresh cycle on the first and second bank, wherein the first bank write cycles lag the first bank read cycles, and wherein the second bank write cycles lag the second bank read cycles. Moreover, the read and write memory operations constantly swap between the read and write cycles and between the first and second bank.
    • 一种用于对同一DRAM组执行背靠背读和写存储器操作的结构和方法,包括在连续的第一存储体读周期期间在第一存储体上读取数据和在连续的第二存储体写周期期间将数据写入第二存储体的关系, 在连续的第二组读取周期期间在第二组上的读取数据之间循环,并且在连续的第一组写周期期间将数据写入第一组,并且在第一和第二组上执行刷新周期,其中第一组写入周期落后于第一组 读周期,并且其中第二存储体写周期滞后于第二存储体读周期。 此外,读和写存储器操作在读和写周期之间以及第一和第二存储体之间不断地交换。
    • 10. 发明授权
    • Efficient semiconductor burn-in circuit and method of operation
    • 高效半导体老化电路及其操作方法
    • US6038181A
    • 2000-03-14
    • US136112
    • 1998-08-18
    • George M. BracerasJames J. CovinoRichard E. HeeHarold Pilo
    • George M. BracerasJames J. CovinoRichard E. HeeHarold Pilo
    • G11C29/00G01R31/30G11C7/00
    • G01R31/30
    • The disclosed invention provides a circuit and burn-in test method for semiconductor devices that increases the speed of burn-in tests. The present invention accomplishes this by causing each of the devices under test to be tested multiple times (from 2 to 32+ times) during each power cycle. By such multiple cycling of the unit under test, during the power cycle, the total test time is shortened. It has also been found that the devices tested in accordance with the present invention are more efficiently stressed and have a reliability greater than devices passing the prior art tests. In accordance with the invention, the memory or logic devices under test are provided with a respective clock means that will operate each of the devices under test through multiple (from 2 to 32+ times) write and read operations during each power cycle. Data coherency for each read operation is provided as is the inversion of data if any fail is recorded during a read operation. Accordingly, the present invention provides a burn-in test that more efficiently stresses semiconductor devices such as memory or logic units, by a factor of up to 32. The invention utilizes the internal clock of a semiconductor device by cycling that clock x times during the period of each external clock cycle in the burn-in test and simultaneously synchronizes these internal cycles with the test cycle, thereby providing coherent data for each internal cycle.
    • 所公开的发明提供了一种提高老化测试速度的半导体器件的电路和老化测试方法。 本发明通过在每个功率循环期间使被测设备中的每一个被测试多次(从2到32倍)来实现。 通过被测单元的这种多次循环,在电源循环期间,总测试时间缩短。 还已经发现,根据本发明测试的装置被更有效地应力并且具有比通过现有技术测试的装置更大的可靠性。 根据本发明,被测试的存储器或逻辑器件设置有相应的时钟装置,其将在每个功率循环期间通过多次(从2到32+倍)的写入和读取操作来操作被测试的每个器件。 如果在读取操作期间记录任何失败,则提供每个读取操作的数据一致性。 因此,本发明提供了一种老化测试,其更有效地将半导体器件(例如存储器或逻辑单元)应力高达32倍。本发明通过在半导体器件的周期内循环该时钟x次来利用半导体器件的内部时钟 在老化测试中每个外部时钟周期的周期,同时使这些内部周期与测试周期同步,从而为每个内部循环提供相干数据。