会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 4. 发明申请
    • CMOS BOLOMETER
    • US20140054740A1
    • 2014-02-27
    • US13969828
    • 2013-08-19
    • Robert Bosch GmbH
    • Gary YamaAndo FeyhAshwin SamaraoFabian PurklGary O'Brien
    • H01L31/02
    • H01L31/02019G01J5/023G01J5/0235G01J5/024G01J5/20G01J2005/204H01L27/1446
    • A method of manufacturing a semiconductor device includes forming at least one sacrificial layer on a substrate during a complementary metal-oxide-semiconductor (CMOS) process. An absorber layer is deposited on top of the at least one sacrificial layer. A portion of the at least one sacrificial layer beneath the absorber layer is removed to form a gap over which a portion of the absorber layer is suspended. The sacrificial layer can be an oxide of the CMOS process with the oxide being removed to form the gap using a selective hydrofluoric acid vapor dry etch release process. The sacrificial layer can also be a polymer layer with the polymer layer being removed to form the gap using an O2 plasma etching process.
    • 制造半导体器件的方法包括在互补金属氧化物半导体(CMOS)工艺期间在衬底上形成至少一个牺牲层。 在所述至少一个牺牲层的顶部上沉积吸收层。 吸收层下面的至少一个牺牲层的一部分被去除以形成一个间隙,吸收层的一部分悬挂在该间隙上。 牺牲层可以是CMOS工艺的氧化物,其中使用选择性氢氟酸蒸气干蚀刻释放工艺除去氧化物以形成间隙。 牺牲层也可以是聚合物层,其中除去聚合物层以使用O 2等离子体蚀刻工艺形成间隙。
    • 10. 发明申请
    • Resistive MEMS Humidity Sensor
    • 电阻式MEMS湿度传感器
    • US20140167791A1
    • 2014-06-19
    • US14108198
    • 2013-12-16
    • Robert Bosch GmbH
    • Ando FeyhAndrew GrahamAshwin SamaraoGary YamaGary O'Brien
    • G01N27/04
    • G01N27/121
    • A semiconductor device includes a substrate, an insulating film provided on a surface of the substrate, and a sensing film formed of a conductive material deposited on top of the insulating film. The sensing film defines at least one conductive path between a first position and a second position on the insulating film. A first circuit connection is electrically connected to the sensing film at the first position on the insulating layer, and a second circuit connection is electrically connected to the sensing film at the second position. A control circuit is operatively connected to the first circuit connection and the second circuit connection for measuring an electrical resistance of the sensing film. The sensing film has a thickness that enables a resistivity of the sensing film to be altered predictably in a manner that is dependent on ambient moisture content.
    • 半导体器件包括衬底,设置在衬底的表面上的绝缘膜和由沉积在绝缘膜的顶部上的导电材料形成的感测膜。 感测膜在绝缘膜上的第一位置和第二位置之间限定至少一个导电路径。 第一电路连接在绝缘层上的第一位置处电连接到感测膜,并且第二电路连接在第二位置电连接到感测膜。 控制电路可操作地连接到第一电路连接和用于测量感测膜的电阻的第二电路连接。 感测膜具有能够以取决于环境水分含量的方式预测地改变感测膜的电阻率的厚度。