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1. 发明授权

US10317211B2 Robust inertial sensors 有权
公开(公告)号：US10317211B2
公开(公告)日：2019-06-11
申请号：US15108414
申请日：2014-12-30
申请人： Robert Bosch GmbH , Bongsang Kim , Ando Feyh , Andrew Graham , Gary O'Brien , Michael Baus , Ralf Maier , Mariusz Koc
发明人： Bongsang Kim , Ando Feyh , Andrew Graham , Gary O'Brien , Michael Baus , Ralf Maier , Mariusz Koc
IPC分类号： G01P1/02 , G01C19/5769 , G01P15/08 , G01D5/241 , G01P1/00 , G01P15/18
摘要： In one embodiment, a sensor includes a rigid wafer outer body. A first cavity is located within the rigid wafer outer body, and a first vibration isolating spring is supported by the rigid wafer outer body and extends into the first cavity. A second vibration isolating spring is supported by the rigid wafer outer body and extends into the first cavity, and a first sensor packaging is supported by the first vibration isolating spring and the second vibration isolating spring within the first cavity.

2. 发明申请

US20160327392A1 Robust Inertial Sensors 审中-公开
标题翻译：强大的惯性传感器
公开(公告)号：US20160327392A1
公开(公告)日：2016-11-10
申请号：US15108414
申请日：2014-12-30
申请人： Bonsang Kim , Ando Feyh , Andrew Graham , Gary O'Brien , Michael Baus , Ralf Maier , Mariusz Koc , Robert Bosch GmbH
发明人： Bonsang Kim , Ando Feyh , Andrew Graham , Gary O'Brien , Michael Baus , Ralf Maier , Mariusz Koc
IPC分类号： G01C19/5769
CPC分类号： G01C19/5769 , B81B7/0016 , B81B2201/0235 , B81B2201/0242 , B81B2201/0264 , B81B2207/012 , G01P1/003 , G01P1/023 , G01P15/0802 , G01P15/18 , G01P2015/084 , G01P2015/0882 , H01L2224/48137 , H01L2924/16152
摘要： In one embodiment, a sensor includes a rigid wafer outer body, a first cavity located within the rigid wafer outer body, a first spring supported by the rigid wafer outer body and extending into the first cavity, a second spring supported by the rigid wafer outer body and extending into the first cavity, and a first sensor structure supported by the first spring and the second spring within the first cavity.
摘要翻译：在一个实施例中，传感器包括刚性晶片外部主体，位于刚性晶片外部主体内的第一腔体，由刚性晶片外部主体支撑并延伸到第一腔体中的第一弹簧，由刚性晶片外部支撑的第二弹簧并且延伸到第一腔体中，以及由第一弹簧和第二弹簧支撑在第一腔内的第一传感器结构。

3. 发明授权

US10184910B2 Combined pressure and humidity sensor 有权
公开(公告)号：US10184910B2
公开(公告)日：2019-01-22
申请号：US14062886
申请日：2013-10-25
申请人： Robert Bosch Tool Corporation , Robert Bosch GmbH
发明人： Gerhard Lammel , Sibylle Waffenschmidt , Ando Feyh , Gary O'Brien , Andrew Graham
IPC分类号： G01N27/04 , G01N27/22 , G01D3/036 , G01L19/14 , G01L19/00
摘要： A sensor device package includes a pressure sensor and a humidity sensor mounted on the same substrate and in the same housing with light protection for the pressure sensor a media opening for gas exchange for the humidity sensor. Light protection and rapid response times are provided through strategic positioning of the media opening, strategic arrangement of the pressure sensor, humidity sensor, and the media opening, and/or the use of opaque materials.

4. 发明授权

US10183857B2 MEMS pressure sensor with multiple membrane electrodes 有权
公开(公告)号：US10183857B2
公开(公告)日：2019-01-22
申请号：US13969840
申请日：2013-08-19
申请人： Robert Bosch GmbH
发明人： Andrew Graham , Ando Feyh , Bernhard Gehl
IPC分类号： H01L29/84 , B81B3/00 , B81C1/00 , G01L9/00 , G01D5/241
摘要： In one embodiment, a MEMS sensor includes a first fixed electrode in a first layer, a cavity defined above the first fixed electrode, a membrane extending over the cavity, a first movable electrode defined in the membrane and located substantially directly above the first fixed electrode, and a second movable electrode defined at least partially within the membrane and located at least partially directly above the cavity.

5. 发明授权

US09511998B2 MEMS device having a getter 有权
标题翻译：具有吸气剂的MEMS装置
公开(公告)号：US09511998B2
公开(公告)日：2016-12-06
申请号：US14207752
申请日：2014-03-13
申请人： Robert Bosch GmbH
发明人： Ashwin Samarao , Gary O'Brien , Ando Feyh , Gary Yama , Andrew Graham , Bongsang Kim , Fabian Purkl
IPC分类号： H01L21/322 , B81C1/00 , H01L23/28
CPC分类号： B81C1/00285 , B81C2201/0115 , B81C2203/0109 , B81C2203/0118 , B81C2203/035 , H01L21/3223 , H01L21/3225 , H01L23/28
摘要： A microelectromechanical system (MEMS) device includes a high density getter. The high density getter includes a silicon surface area formed by porosification or by the formation of trenches within a sealed cavity of the device. The silicon surface area includes a deposition of titanium or other gettering material to reduce the amount of gas present in the sealed chamber such that a low pressure chamber is formed. The high density getter is used in bolometers and gyroscopes but is not limited to those devices.
摘要翻译：微机电系统（MEMS）装置包括高密度吸气剂。高密度吸气剂包括通过孔化形成的硅表面积或通过在该装置的密封腔内形成沟槽。硅表面积包括钛或其它吸气材料的沉积物，以减少密封室中存在的气体的量，从而形成低压室。高密度吸气剂用于测辐射仪和陀螺仪，但不限于这些设备。

6. 发明申请

US20140150560A1 MEMS Pressure Sensor Assembly with Electromagnetic Shield 审中-公开
标题翻译：具有电磁屏蔽的MEMS压力传感器组件
公开(公告)号：US20140150560A1
公开(公告)日：2014-06-05
申请号：US14091509
申请日：2013-11-27
申请人： Robert Bosch GmbH
发明人： Gary O'Brien , Ando Feyh , Andrew Graham
IPC分类号： G01L9/14
CPC分类号： G01L9/14 , G01L1/142 , G01L9/0073 , G01L9/12 , G01L19/069
摘要： A pressure sensor assembly includes a pressure sensor die and a circuit die. The pressure sensor die includes a MEMS pressure sensor and an electromagnetic shield layer. The circuit die includes an ASIC configured to generate an electrical output corresponding to a pressure sensed by the MEMS pressure sensor. The ASIC is electrically connected to the pressure sensor die. The electromagnetic shield is configured to shield the MEMS pressure sensor and the ASIC from electromagnetic radiation.
摘要翻译：压力传感器组件包括压力传感器管芯和电路管芯。压力传感器管芯包括MEMS压力传感器和电磁屏蔽层。电路管芯包括被配置为产生对应于由MEMS压力传感器感测的压力的电输出的ASIC。 ASIC电连接到压力传感器芯片。电磁屏蔽被配置为屏蔽MEMS压力传感器和ASIC免受电磁辐射。

7. 发明授权

US10160632B2 System and method for forming a buried lower electrode in conjunction with an encapsulated MEMS device 有权
公开(公告)号：US10160632B2
公开(公告)日：2018-12-25
申请号：US13969522
申请日：2013-08-17
申请人： Robert Bosch GmbH
发明人： Andrew Graham , Ando Feyh , Gary O'Brien
IPC分类号： B81B3/00 , B81C1/00 , B81B7/00
摘要： A system and method for forming a sensor device with a buried first electrode includes providing a first silicon portion with an electrode layer and a second silicon portion with a device layer. The first silicon portion and the second silicon portion are adjoined along a common oxide layer formed on the electrode layer of the first silicon portion and the device layer of the second silicon portion. The resulting multi-silicon stack includes a buried lower electrode that is further defined by a buried oxide layer, a highly-doped ion implanted region, or a combination thereof. The multi-silicon stack has a plurality of silicon layers and silicon dioxide layers with electrically isolated regions in each layer allowing for both the lower electrode and an upper electrode. The multi-silicon stack further includes a spacer that enables the lower electrode to be accessible from a topside of the sensor device.

8. 发明申请

US20170297896A1 Epi-Poly Etch Stop for Out of Plane Spacer Defined Electrode 审中-公开
公开(公告)号：US20170297896A1
公开(公告)日：2017-10-19
申请号：US15291374
申请日：2016-10-12
申请人： Robert Bosch GmbH
发明人： Andrew Graham , Gary Yama , Gary O'Brien
IPC分类号： B81B3/00 , B81C1/00
CPC分类号： B81B3/0021 , B81B2201/0271 , B81B2203/04 , B81B2203/053 , B81C1/00095 , B81C1/00166 , B81C2201/0132 , B81C2201/014 , B81C2201/0177 , B81C2203/0136
摘要： A device with an out-of-plane electrode includes a device layer positioned above a handle layer, a first electrode defined within the device layer, a cap layer having a first cap layer portion spaced apart from an upper surface of the device layer by a gap, and having an etch stop perimeter defining portion defining a lateral edge of the gap, and an out-of-plane electrode defined within the first cap layer portion by a spacer.

9. 发明授权

US09588073B2 Resistive MEMS humidity sensor 有权
标题翻译：电阻式MEMS湿度传感器
公开(公告)号：US09588073B2
公开(公告)日：2017-03-07
申请号：US14108198
申请日：2013-12-16
申请人： Robert Bosch GmbH
发明人： Ando Feyh , Andrew Graham , Ashwin Samarao , Gary Yama , Gary O'Brien
IPC分类号： G01N27/12
CPC分类号： G01N27/121
摘要： A semiconductor device includes a substrate, an insulating film provided on a surface of the substrate, and a sensing film formed of a conductive material deposited on top of the insulating film. The sensing film defines at least one conductive path between a first position and a second position on the insulating film. A first circuit connection is electrically connected to the sensing film at the first position on the insulating layer, and a second circuit connection is electrically connected to the sensing film at the second position. A control circuit is operatively connected to the first circuit connection and the second circuit connection for measuring an electrical resistance of the sensing film. The sensing film has a thickness that enables a resistivity of the sensing film to be altered predictably in a manner that is dependent on ambient moisture content.
摘要翻译：半导体器件包括衬底，设置在衬底的表面上的绝缘膜和由沉积在绝缘膜的顶部上的导电材料形成的感测膜。感测膜在绝缘膜上的第一位置和第二位置之间限定至少一个导电路径。第一电路连接在绝缘层上的第一位置处电连接到感测膜，并且第二电路连接在第二位置电连接到感测膜。控制电路可操作地连接到第一电路连接和用于测量感测膜的电阻的第二电路连接。感测膜具有能够以取决于环境水分含量的方式预测地改变感测膜的电阻率的厚度。

10. 发明授权

US09476779B2 Sensor with an embedded thermistor for precise local temperature measurement 有权
标题翻译：带有嵌入式热敏电阻的传感器，用于精确的局部温度测量
公开(公告)号：US09476779B2
公开(公告)日：2016-10-25
申请号：US14096306
申请日：2013-12-04
申请人： Robert Bosch GmbH
发明人： Andrew Graham , Ando Feyh , Gary O'Brien
IPC分类号： G01K7/00 , G01K7/22 , B81B7/00
CPC分类号： G01K7/226 , B81B7/008 , B81B7/0087 , B81B2201/0264 , B81B2207/03 , Y10T29/49085
摘要： A resistive temperature sensor (thermistor) for a microelectromechanical system (MEMS) device provides local temperatures of MEMS sensors and other MEMS devices for temperature compensation. Local accurate temperatures of the sensors and other devices provide for temperature compensation of such sensors or devices. By incorporating the thermistor structure into a MEMS device, an accurate temperature is sensed and measured adjacent to or within the structural layers of the device. In one embodiment, the thermistor is located within a few micrometers of the primary device.
摘要翻译：用于微机电系统（MEMS）器件的电阻式温度传感器（热敏电阻）提供MEMS传感器和其他MEMS器件的温度补偿的局部温度。传感器和其他设备的本地准确温度可提供这种传感器或设备的温度补偿。通过将热敏电阻结构结合到MEMS器件中，在设备的结构层附近或内部感测和测量精确的温度。在一个实施例中，热敏电阻位于主要装置的几微米内。

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