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1. 发明授权

US10183857B2 MEMS pressure sensor with multiple membrane electrodes 有权
公开(公告)号：US10183857B2
公开(公告)日：2019-01-22
申请号：US13969840
申请日：2013-08-19
申请人： Robert Bosch GmbH
发明人： Andrew Graham , Ando Feyh , Bernhard Gehl
IPC分类号： H01L29/84 , B81B3/00 , B81C1/00 , G01L9/00 , G01D5/241
摘要： In one embodiment, a MEMS sensor includes a first fixed electrode in a first layer, a cavity defined above the first fixed electrode, a membrane extending over the cavity, a first movable electrode defined in the membrane and located substantially directly above the first fixed electrode, and a second movable electrode defined at least partially within the membrane and located at least partially directly above the cavity.

2. 发明授权

US09758369B2 Method for manufacturing a microphone structure and a pressure sensor structure in the layer structure of a MEMS element 有权
公开(公告)号：US09758369B2
公开(公告)日：2017-09-12
申请号：US15098462
申请日：2016-04-14
申请人： Robert Bosch GmbH
发明人： Florian Schoen , Bernhard Gehl
IPC分类号： H01L33/02 , B81B7/02 , G01L9/12 , H04R19/04 , B81C1/00 , G01L1/14 , H04R19/00 , H04R31/00
CPC分类号： B81B7/02 , B81B2201/0257 , B81B2201/0264 , B81B2203/0127 , B81C1/00214 , B81C2201/0109 , B81C2201/013 , G01L1/148 , G01L9/12 , H04R19/005 , H04R19/04 , H04R31/00 , H04R2201/003
摘要： A manufacturing method for a MEMS element, by which both a microphone including a microphone capacitor and a pressure sensor including a measuring capacitor are implemented in the MEMS structure. The components of the microphone and pressure sensor are formed in parallel but independently in the layers of the MEMS structure. The pressure sensor diaphragm is structured from a first layer, which functions as a base layer for the microphone diaphragm. The fixed counter-electrode of the measuring capacitor is structured from an electrically conductive second layer which functions as a diaphragm layer of the microphone. The fixed pressure sensor counter-element is structured from third and fourth layers. The third layer functions in the area of the microphone structure as a sacrificial layer, the thickness of which in the area of the microphone structure determines the electrode distance of the microphone capacitor. The microphone counter-element is structured from the fourth layer.

3. 发明授权

US10793430B2 Method for producing thin MEMS wafers 有权
公开(公告)号：US10793430B2
公开(公告)日：2020-10-06
申请号：US16131455
申请日：2018-09-14
申请人： Robert Bosch GmbH
发明人： Sebastien Loiseau , Arnim Hoechst , Bernhard Gehl , Eugene Moliere Tanguep Njiokep , Sandra Altmannshofer
IPC分类号： B81C1/00
摘要： A method for producing thin MEMS wafers including: (A) providing an SOI wafer having an upper silicon layer, a first SiO2 layer and a lower silicon layer, the first SiO2 layer being situated between the upper silicon layer and the lower silicon layer, (B) producing a second SiO2 layer on the upper silicon layer, (C) producing a MEMS structure on the second SiO2 layer, (D) introducing clearances into the lower silicon layer down to the first SiO2 layer, (E) etching the first SiO2 layer and thus removing the lower silicon layer.

4. 发明授权

US10555090B2 Microphone with encapsulated moving electrode 有权
公开(公告)号：US10555090B2
公开(公告)日：2020-02-04
申请号：US16000593
申请日：2018-06-05
申请人： Akustica, Inc. , Robert Bosch GmbH
发明人： Jochen Reinmuth , Vijaye Rajaraman , Daniel Meisel , Bernhard Gehl
IPC分类号： B81C1/00 , H04R1/28 , H04R19/04 , H04R19/00 , H04R7/04
摘要： A MEMS microphone system with encapsulated movable electrode is provided. The MEMS microphone system comprises a MEMS sensor having an access channel, a plug, and first and second members. The access channel configured to receive the plug is formed on at least one of the first and second member. A vacuum having a pressure different from a pressure outside the MEMS sensor is formed between the first and second members.

5. 发明申请

US20180352341A1 Microphone with Encapsulated Moving Electrode 审中-公开
公开(公告)号：US20180352341A1
公开(公告)日：2018-12-06
申请号：US16000593
申请日：2018-06-05
申请人： Akustica, Inc. , Robert Bosch GmbH
发明人： Jochen Reinmuth , Vijaye Rajaraman , Daniel Meisel , Bernhard Gehl
IPC分类号： H04R19/04 , H04R19/00 , H04R7/04
CPC分类号： H04R19/04 , B81B2201/0257 , H04R7/04 , H04R19/005 , H04R2201/003
摘要： A MEMS microphone system with encapsulated movable electrode is provided. The MEMS microphone system comprises a MEMS sensor having an access channel, a plug, and first and second members. The access channel configured to receive the plug is formed on at least one of the first and second member. A vacuum having a pressure different from a pressure outside the MEMS sensor is formed between the first and second members.

6. 发明申请

US20190116429A1 MEMS Microphone System and Method 审中-公开
公开(公告)号：US20190116429A1
公开(公告)日：2019-04-18
申请号：US15787003
申请日：2017-10-18
申请人： Akustica, Inc. , Robert Bosch GmbH
发明人： Daniel C. Meisel , Bernhard Gehl , Yujie Zhang , Andy Doller , Gokhan Hatipoglu
IPC分类号： H04R19/04 , H04R19/00 , H04R7/04 , B81B7/00
CPC分类号： H04R19/04 , B81B7/0061 , B81B2201/0257 , B81B2203/0127 , B81B2203/0136 , B81B2203/04 , H04R7/04 , H04R19/005 , H04R2201/003
摘要： A Microelectromechanical system (MEMS) microphone comprises a base unit and a driving system disposed on the base unit. The driving system comprises a first diaphragm, a second diaphragm spaced apart from the first diaphragm, and a comb finger counter electrode assembly comprising a moving electrode member, the counter electrode assembly is mechanically coupled to the first and second diaphragms. The driving system further comprises a side wall mechanically coupled the first diaphragm to the second diaphragm defining a sealed electrode region and the sealed electrode region having an encapsulated gas pressure and the comb finger counter electrode assembly is disposed within the sealed electrode region.

7. 发明申请

US20190098418A1 MEMS Microphone System 审中-公开
公开(公告)号：US20190098418A1
公开(公告)日：2019-03-28
申请号：US16021511
申请日：2018-06-28
申请人： Robert Bosch Gmbh , Akustica, Inc.
发明人： Christoph Hermes , Bernhard Gehl , Arnim Hoechst , Daniel Meisel , Andrew Doller , Yujie Zhang , Gokhan Hatipoglu
IPC分类号： H04R19/04 , H04R19/00
摘要： A MEMS microphone includes a substrate, a lower membrane supported on the substrate, an upper membrane suspended above the lower membrane, a first electrode supported on the lower membrane, and a second electrode supported on the upper membrane. The lower membrane and the upper membrane enclose a cavity in which the first electrode and the second electrode are located. The lower membrane and the upper membrane are each formed of silicon carbonitride (SiCN). The first electrode and the second electrode are each formed of polysilicon.

8. 发明申请

US20190092631A1 METHOD FOR PRODUCING THIN MEMS WAFERS 审中-公开
公开(公告)号：US20190092631A1
公开(公告)日：2019-03-28
申请号：US16131455
申请日：2018-09-14
申请人： Robert Bosch GmbH
发明人： Sebastien Loiseau , Arnim Hoechst , Bernhard Gehl , Eugene Moliere Tanguep Njiokep , Sandra Altmannshofer
IPC分类号： B81C1/00
CPC分类号： B81C1/00476 , B81C1/00158 , B81C2201/0132 , B81C2201/014 , B81C2201/056
摘要： A method for producing thin MEMS wafers including: (A) providing an SOI wafer having an upper silicon layer, a first SiO2 layer and a lower silicon layer, the first SiO2 layer being situated between the upper silicon layer and the lower silicon layer, (B) producing a second SiO2 layer on the upper silicon layer, (C) producing a MEMS structure on the second SiO2 layer, (D) introducing clearances into the lower silicon layer down to the first SiO2 layer, (E) etching the first SiO2 layer and thus removing the lower silicon layer.

9. 发明授权

US09725300B2 Capacitive MEMS-sensor element having bond pads for the electrical contacting of the measuring capacitor electrodes 有权
公开(公告)号：US09725300B2
公开(公告)日：2017-08-08
申请号：US15059630
申请日：2016-03-03
申请人： Robert Bosch GmbH
发明人： Heiko Stahl , Arnim Hoechst , Bernhard Gehl , Rolf Scheben , Benedikt Stein
IPC分类号： H01L29/84 , B81B3/00
CPC分类号： B81B3/0086 , B81B2201/0257 , B81B2201/0264 , B81B2203/0127 , B81B2203/04
摘要： Measures for reducing parasitic capacitances in the layer structure of capacitive MEMS sensor elements, in which parasitic capacitances between bond pads for electrically contacting measuring capacitor electrodes and an electrically conductive layer lying underneath are reduced by these measures. The sensor structure having the measuring capacitor electrodes and bond pads of such MEMS components are in a layer structure on a semiconductor substrate. The carrier layer directly underneath the bond pad structure is uninterrupted in the bond pad region, and the layer structure includes at least one insulation layer by which at least one of the bond pads is electrically insulated from an electrically conductive layer lying underneath. At least one layer under the carrier layer is structured in the region of this bond pad, so that hollow spaces are situated in the layer structure underneath this bond pad, by which the parasitic capacitance between this bond pad and the conductive layer lying underneath is reduced. Alternatively/additionally, the material of the conductive layer in the region underneath this bond pad is replaced by electrically conductive material at least in the upper layer region, so that the insulation layer in the region of this bond pad is considerably thicker than outside the bond pad region.

10. 发明申请

US20160280534A1 CAPACITIVE MEMS-SENSOR ELEMENT HAVING BOND PADS FOR THE ELECTRICAL CONTACTING OF THE MEASURING CAPACITOR ELECTRODES 有权
标题翻译：具有用于测量电容器电极的电气接触的焊盘的电容式MEMS传感器元件
公开(公告)号：US20160280534A1
公开(公告)日：2016-09-29
申请号：US15059630
申请日：2016-03-03
申请人： Robert Bosch GmbH
发明人： Heiko Stahl , Arnim Hoechst , Bernhard Gehl , Rolf Scheben , Benedikt Stein
IPC分类号： B81B3/00
CPC分类号： B81B3/0086 , B81B2201/0257 , B81B2201/0264 , B81B2203/0127 , B81B2203/04
摘要： Measures for reducing parasitic capacitances in the layer structure of capacitive MEMS sensor elements, in which parasitic capacitances between bond pads for electrically contacting measuring capacitor electrodes and an electrically conductive layer lying underneath are reduced by these measures. The sensor structure having the measuring capacitor electrodes and bond pads of such MEMS components are in a layer structure on a semiconductor substrate. The carrier layer directly underneath the bond pad structure is uninterrupted in the bond pad region, and the layer structure includes at least one insulation layer by which at least one of the bond pads is electrically insulated from an electrically conductive layer lying underneath. At least one layer under the carrier layer is structured in the region of this bond pad, so that hollow spaces are situated in the layer structure underneath this bond pad, by which the parasitic capacitance between this bond pad and the conductive layer lying underneath is reduced. Alternatively/additionally, the material of the conductive layer in the region underneath this bond pad is replaced by electrically conductive material at least in the upper layer region, so that the insulation layer in the region of this bond pad is considerably thicker than outside the bond pad region.
摘要翻译：通过这些措施，降低电容式MEMS传感器元件的层结构中的寄生电容的措施，其中用于电接触测量电容器电极的接合焊盘和位于其下的导电层的寄生电容被减小。具有测量电容器电极和这些MEMS部件的接合焊盘的传感器结构在半导体衬底上具有层结构。接合焊盘结构正下方的载体层在接合焊盘区域中不间断，并且层结构包括至少一个绝缘层，通过该绝缘层，至少一个接合焊盘与位于其下的导电层电绝缘。载体层下面的至少一层被构造在该接合焊盘的区域中，使得中空空间位于该接合焊盘下方的层结构中，通过该空隙，该接合焊盘和位于其下的导电层之间的寄生电容减小。或者/另外，至少在上层区域中，导电层在该接合焊盘下面的区域中的材料被导电材料代替，使得在该焊盘区域内的绝缘层比粘合层外部显着地厚垫区域。

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