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1. 发明授权

US11237231B2 Z-axis magnetic sensor with distributed flux guides 有权
公开(公告)号：US11237231B2
公开(公告)日：2022-02-01
申请号：US16957719
申请日：2018-12-20
申请人： Robert Bosch GmbH , Anuraag Mohan , Phillip Mather , Guido De Sandre
发明人： Anuraag Mohan , Phillip Mather , Guido De Sandre
IPC分类号： G01R33/09
摘要： An out-of-plane tunneling magnetoresistive (TMR) magnetic field sensor includes a sense element that defines a sense plane and a flux guide configured to direct a magnetic field perpendicular to the sense plane into the sense plane. The magnetic field sensor further includes a first coil arranged in a first plane, a second coil electrically insulated from the first coil and arranged in a spaced-apart second plane, and drive circuitry operatively connected to the first coil and the second coil. The drive circuitry in a first mode energizes the first and second coils to generate respective first and second fields that combine to set a magnetization of the flux guide. The drive circuitry in a second mode energizes only the first coil to generate the first field so as to set a magnetization of the sense element without changing the magnetization of the flux guide.

2. 发明申请

US20200371171A1 Z-Axis Magnetic Sensor with Distributed Flux Guides 审中-公开
公开(公告)号：US20200371171A1
公开(公告)日：2020-11-26
申请号：US16957719
申请日：2018-12-20
申请人： Anuraag MOHAN , Phillip MAHER , Guide DESANDRE , Robert Bosch GmbH
发明人： Anuraag Mohan , Phillip Mather , Guido De Sandre
IPC分类号： G01R33/09
摘要： An out-of-plane tunneling magnetoresistive (TMR) magnetic field sensor includes a sense element that defines a sense plane and a flux guide configured to direct a magnetic field perpendicular to the sense plane into the sense plane. The magnetic field sensor further includes a first coil arranged in a first plane, a second coil electrically insulated from the first coil and arranged in a spaced-apart second plane, and drive circuitry operatively connected to the first coil and the second coil. The drive circuitry in a first mode energizes the first and second coils to generate respective first and second fields that combine to set a magnetization of the flux guide. The drive circuitry in a second mode energizes only the first coil to generate the first field so as to set a magnetization of the sense element without changing the magnetization of the flux guide.

3. 发明申请

US20060226873A1 Level shifter translator 有权
公开(公告)号：US20060226873A1
公开(公告)日：2006-10-12
申请号：US11321732
申请日：2005-12-28
申请人： Guido De Sandre , Marco Poles , Marco Pasotti
发明人： Guido De Sandre , Marco Poles , Marco Pasotti
IPC分类号： H03K19/0175
CPC分类号： H03K19/018528 , H03K19/01707 , H03K19/01721
摘要： Level shifter translator of the type comprising at least one first transistor and one second MOS transistor belonging to respective circuit branches connected with a first common conduction terminal and connected towards a first potential reference and receiving, on the respective conduction terminals, input differential voltages, the first and the second transistor have respective circuit branches referring to a biasing circuit with current mirror, a third transistor allows to couple the second transistor to said biasing circuit, an inverter connected to an output of said the circuit with the output driving the third transistor.

4. 发明授权

US08264872B2 Column decoder for non-volatile memory devices, in particular of the phase-change type 有权
标题翻译：用于非易失性存储器件的列解码器，特别是相变型
公开(公告)号：US08264872B2
公开(公告)日：2012-09-11
申请号：US12548241
申请日：2009-08-26
申请人： Guido De Sandre , Marco Pasotti
发明人： Guido De Sandre , Marco Pasotti
IPC分类号： G11C11/00 , G11C8/10 , G11C7/00
CPC分类号： G11C13/0026 , G11C13/0004
摘要： A column decoder is for a phase-change memory device provided with an array of memory cells, a reading stage for reading data contained in the memory cells, and a programming stage for programming the data. The column decoder selects and enables biasing of a bitline of the array and generates a current path between the bitline and the reading stage or, alternatively, the programming stage, respectively during a reading or a programming operation of the contents of the memory cells. In the column decoder, a first decoder circuit generates a first current path between the bitline and the reading stage, and a second decoder circuit, distinct and separate from the first decoder circuit, generates a second current path, distinct from the first current path, between the bitline and the programming stage.
摘要翻译：列解码器用于设置有存储器单元阵列的相变存储器件，用于读取存储单元中包含的数据的读取级和用于对数据进行编程的编程级。列解码器选择并启用阵列的位线的偏置，并且在存储器单元的内容的读取或编程操作期间分别产生位线和读取级之间的电流路径，或者编程阶段。在列解码器中，第一解码器电路在位线和读取级之间产生第一电流路径，并且与第一解码器电路不同且分离的第二解码器电路产生与第一电流路径不同的第二电流路径，在位线和编程阶段之间。

5. 发明申请

US20100054032A1 ROW DECODER FOR NON-VOLATILE MEMORY DEVICES, IN PARTICULAR OF THE PHASE-CHANGE TYPE 有权
标题翻译：非易失性存储器件的ROW解码器，特别是相变型
公开(公告)号：US20100054032A1
公开(公告)日：2010-03-04
申请号：US12548246
申请日：2009-08-26
申请人： Guido De Sandre
发明人： Guido De Sandre
IPC分类号： G11C11/00 , G11C8/10 , G11C7/00
CPC分类号： G11C8/08 , G11C8/10 , G11C13/0004 , G11C13/0023 , G11C13/0028
摘要： A hierarchical row decoder is for a phase-change memory device provided with an array of memory cells organized according to a plurality of array wordlines and array bitlines. The row decoder has a global decoder that addresses first and a second global wordlines according to first address signals; and a local decoder, which is operatively coupled to the global decoder and addresses a respective array wordline according to the value the first and second global wordline and second address signals. The local decoder has a first circuit branch providing, when the first global wordline is addressed, a first current path between the array wordline and a first biasing source during a reading operation; and a second circuit branch providing, when the second global wordline is addressed, a second current path, distinct from the first current path, between the array wordline and a second biasing source during a programming operation.
摘要翻译：分层行解码器用于相变存储器件，该相变存储器件具有根据多个阵列字线和阵列位线组织的存储器单元阵列。行解码器具有根据第一地址信号寻址第一和第二全局字线的全局解码器; 以及本地解码器，其可操作地耦合到全局解码器，并且根据第一和第二全局字线和第二地址信号的值寻址相应的阵列字线。本地解码器具有第一电路分支，当第一全局字线被寻址时，提供在读取操作期间阵列字线和第一偏置源之间的第一电流路径; 以及第二电路分支，当在编程操作期间，当所述第二全局字线被寻址时，提供与所述第一电流路径不同的第二电流路径，所述第二电流路径在所述阵列字线和第二偏置源之间。

6. 发明申请

US20100020594A1 DEVICE FOR PROGRAMMING A PCM CELL WITH DISCHARGE OF CAPACITANCE AND METHOD FOR PROGRAMMING A PCM CELL 有权
标题翻译：用于编程具有放电容量的PCM单元的装置和用于编程PCM单元的方法
公开(公告)号：US20100020594A1
公开(公告)日：2010-01-28
申请号：US12510661
申请日：2009-07-28
申请人： Guido De Sandre , Luca Bettini
发明人： Guido De Sandre , Luca Bettini
IPC分类号： G11C11/00 , G11C7/00
CPC分类号： G11C13/0069 , G11C13/0004 , G11C2013/0078 , G11C2013/0092 , G11C2213/79
摘要： A device for programming PCM cells includes a pulse-generator circuit for supplying programming current pulses. The pulse-generator circuit includes: at least one first capacitive element; a charging circuit, connectable to the first capacitive element in a first operating condition, for bringing a reference voltage on the first capacitive element to a reset value; a discharge-current generator, selectively connectable to the first capacitive element in a second operating condition, for discharging the first capacitive element through a controlled discharge current; a logic unit, configured to control connection and disconnection of the first capacitive element), of the charging circuit, and of the discharge-current generator; and a voltage-to-current converter, for converting the reference voltage into current.
摘要翻译：用于编程PCM单元的装置包括用于提供编程电流脉冲的脉冲发生器电路。脉冲发生器电路包括：至少一个第一电容元件; 充电电路，在第一操作状态下可连接到所述第一电容元件，用于使所述第一电容元件上的参考电压达到复位值; 放电电流发生器，在第二操作状态下可选择地连接到第一电容元件，用于通过受控放电电流对第一电容元件进行放电; 一个逻辑单元，被配置为控制第一电容元件的连接和断开）充电电路和放电电流发生器; 以及用于将参考电压转换为电流的电压 - 电流转换器。

7. 发明授权

US07504862B2 Level shifter translator 有权
标题翻译：电平移位器翻译器
公开(公告)号：US07504862B2
公开(公告)日：2009-03-17
申请号：US11321732
申请日：2005-12-28
申请人： Guido De Sandre , Marco Poles , Marco Pasotti
发明人： Guido De Sandre , Marco Poles , Marco Pasotti
IPC分类号： H03K19/0175
CPC分类号： H03K19/018528 , H03K19/01707 , H03K19/01721
摘要： Level shifter translator of the type comprising at least one first transistor and one second MOS transistor belonging to respective circuit branches connected with a first common conduction terminal and connected towards a first potential reference and receiving, on the respective conduction terminals, input differential voltages, the first and the second transistor have respective circuit branches referring to a biasing circuit with current mirror, a third transistor allows to couple the second transistor to said biasing circuit, an inverter connected to an output of said the circuit with the output driving the third transistor.
摘要翻译：该类型的电平移位器转换器包括至少一个第一晶体管和一个第二MOS晶体管，属于与第一公共导通端子连接并连接到第一电位基准的相应电路分支，并且在相应的导通端子上接收输入差分电压，第一晶体管和第二晶体管具有指向具有电流镜的偏置电路的各个电路分支，第三晶体管允许将第二晶体管耦合到所述偏置电路，反相器连接到所述电路的输出端，输出驱动第三晶体管。

8. 发明授权

US07227765B2 Content addressable memory cell 有权
标题翻译：内容可寻址存储单元
公开(公告)号：US07227765B2
公开(公告)日：2007-06-05
申请号：US10970842
申请日：2004-10-20
申请人： Guido De Sandre , Roberto Bez , Fabio Pellizzer
发明人： Guido De Sandre , Roberto Bez , Fabio Pellizzer
IPC分类号： G11C15/00
CPC分类号： G11C15/04 , G11C13/0004 , G11C14/00 , G11C14/009 , G11C15/046
摘要： A content addressable memory cell for a non-volatile content addressable memory, including a non-volatile storage element for storing a content digit, a selection input for selecting the memory cell, a search input for receiving a search digit, and a comparison circuit arrangement for comparing the search digit to the content digit and for driving a match output of the memory cell so as to signal a match between the content digit and the search digit. The non-volatile storage element include at least one phase-change memory element for storing in a non-volatile way the respective content digit.
摘要翻译：一种用于非易失性内容可寻址存储器的内容可寻址存储器单元，包括用于存储内容数位的非易失性存储元件，用于选择存储单元的选择输入，用于接收搜索数字的搜索输入以及比较电路装置用于将搜索数字与内容数字进行比较，并用于驱动存储器单元的匹配输出，以便发出内容数字和搜索数字之间的匹配。非易失性存储元件包括用于以非易失性方式存储相应内容数字的至少一个相变存储器元件。

9. 发明申请

US20050062497A1 Field programmable gate array device 有权
标题翻译：现场可编程门阵列器件
公开(公告)号：US20050062497A1
公开(公告)日：2005-03-24
申请号：US10948079
申请日：2004-09-23
申请人： Fabio Pellizzer , Guido De Sandre , Roberto Bez
发明人： Fabio Pellizzer , Guido De Sandre , Roberto Bez
IPC分类号： G11C16/02 , G11C16/04 , H03K3/037 , H03K19/177
CPC分类号： G11C13/0004 , G11C16/0416 , H03K3/0375 , H03K19/1776
摘要： The present invention proposes a Field Programmable Gate Array device comprising a plurality of configurable electrical connections, a plurality of controlled switches, each one adapted to activating/de-activating at least one respective electrical connection in response to a switch control signal and a control unit including an arrangement of a plurality of control cells. Each control cells controls at least one of said controlled switches by the respective switch control signal, each control cell including a volatile storage element adapted to storing in a volatile way a control logic value corresponding to a preselected status of the at least one controlled switch, and providing to the controlled switch said switch control signal corresponding to the stored logic value. Each control cell further includes a non-volatile storage element coupled to the volatile storage element, the non-volatile storage element being adapted to storing in a non-volatile way the control logic value.
摘要翻译：本发明提出了一种现场可编程门阵列器件，其包括多个可配置的电连接，多个受控开关，每个控制开关适于响应于开关控制信号激活/去激活至少一个相应的电连接，控制单元包括多个控制单元的布置。每个控制单元通过相应的开关控制信号控制所述受控开关中的至少一个，每个控制单元包括易失性存储元件，其适于以易失性方式存储对应于至少一个受控开关的预选状态的控制逻辑值，以及向受控开关提供与所存储的逻辑值对应的所述开关控制信号。每个控制单元还包括耦合到易失性存储元件的非易失性存储元件，非易失性存储元件适于以非易失性方式存储控制逻辑值。

10. 发明授权

US06687167B2 EEPROM flash memory erasable line by line 有权
标题翻译： EEPROM闪存可逐行删除
公开(公告)号：US06687167B2
公开(公告)日：2004-02-03
申请号：US10225513
申请日：2002-08-20
申请人： Giovanni Guaitini , Marco Pasotti , Guido De Sandre , David Iezzi , Marco Poles , Pier Luigi Rolandi
发明人： Giovanni Guaitini , Marco Pasotti , Guido De Sandre , David Iezzi , Marco Poles , Pier Luigi Rolandi
IPC分类号： G11C1604
CPC分类号： G11C16/08 , G11C16/16
摘要： A non-volatile semiconductor memory device including an output connected to a row line and two supply terminals. Each elementary stage has an upper branch with a p-channel MOS transistor and a lower branch with an n-channel MOS transistor. In order to permit the memory to be erased line by line without having to use components capable of withstanding high voltages, each elementary stage has two supplementary MOS transistors, namely an n-channel transistor in the upper branch and a p-channel transistor in the lower branch. In this way it becomes possible to bias the elementary stages in such a manner the in the reading and programming phases the upper branch will function as pull-up and the lower branch as pull-down, while in the erasure phase the upper branch functions as pull-down and the lower branch as pull-up.
摘要翻译：一种非易失性半导体存储器件，包括连接到行线和两个电源端子的输出。每个基本级具有具有p沟道MOS晶体管的上部分支和具有n沟道MOS晶体管的下部分支。为了允许逐行擦除存储器，而不必使用能够承受高电压的部件，每个基本级具有两个辅助MOS晶体管，即上部支路中的n沟道晶体管和下分支。以这种方式，可以以这种方式偏置基本级，在读取和编程阶段，上部分支将用作上拉和下部分支作为下拉，而在擦除阶段，上部分支作为下拉和下部分支作为上拉。

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