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1. 发明授权

US5117114A High resolution amorphous silicon radiation detectors 失效
标题翻译：高分辨率非晶硅辐射探测器
公开(公告)号：US5117114A
公开(公告)日：1992-05-26
申请号：US448240
申请日：1989-12-11
申请人： Robert A. Street , Selig N. Kaplan , Victor Perez-Mendez
发明人： Robert A. Street , Selig N. Kaplan , Victor Perez-Mendez
IPC分类号： G01T1/20 , G01T1/24 , H01L31/0232 , H01L31/117
CPC分类号： H01L31/0232 , G01T1/2018 , H01L31/02322 , H01L31/117 , Y10S257/926
摘要： A radiation detector employing amorphous Si:H cells in an array with each detector cell having at least three contiguous layers (n type, intrinsic, p type), positioned between two electrodes to which a bias voltage is applied. An energy conversion layer atop the silicon cells intercepts incident radiation and converts radiation energy to light energy of a wavelength to which the silicon cells are responsive. A read-out device, positioned proximate to each detector element in an array allows each such element to be interrogated independently to determine whether radiation has been detected in that cell. The energy conversion material may be a layer of luminescent material having a columnar structure. In one embodiment a column of luminescent material detects the passage therethrough of radiation to be detected and directs a light beam signal to an adjacent a-Si:H film so that detection may be confined to one or more such cells in the array. One or both electrodes may have a comb structure, and the teeth of each electrode comb may be interdigitated for capacitance reduction. The amorphous Si:H film may be replaced by an amorphous Si:Ge:H film in which up to 40 percent of the amorphous material is Ge. Two dimensional arrays may be used in X-ray imaging, CT scanning, crystallography, high energy physics beam tracking, nuclear medicine cameras and autoradiography.
摘要翻译：一种辐射检测器，其采用阵列中的非晶Si：H电池，其中每个检测器单元具有至少三个相邻层（n型，本征型，p型），位于施加有偏置电压的两个电极之间。硅单元顶部的能量转换层拦截入射辐射，并将辐射能转换成硅单元响应的波长的光能。位于阵列中的每个检测器元件附近的读出装置允许独立地询问每个这样的元件以确定是否在该单元中检测到辐射。能量转换材料可以是具有柱状结构的发光材料层。在一个实施例中，一列发光材料检测待检测的辐射的通过，并将光束信号引导到相邻的a-Si：H膜，使得检测可以局限于阵列中的一个或多个这样的单元。一个或两个电极可以具有梳状结构，并且每个电极梳的齿可以相互交叉以减少电容。非晶Si：H膜可以由非晶Si：Ge：H膜替代，其中高达40％的无定形材料是Ge。二维阵列可用于X射线成像，CT扫描，晶体学，高能物理光束跟踪，核医学相机和放射自显影。

2. 发明授权

US5164809A Amorphous silicon radiation detectors 失效
标题翻译：非晶硅辐射探测器
公开(公告)号：US5164809A
公开(公告)日：1992-11-17
申请号：US342233
申请日：1989-04-21
申请人： Robert A. Street , Victor Perez-Mendez , Selig N. Kaplan
发明人： Robert A. Street , Victor Perez-Mendez , Selig N. Kaplan
IPC分类号： H01L27/148 , H01L31/0224 , H01L31/101 , H01L31/115
CPC分类号： H01L31/101 , H01L27/148 , H01L31/022408 , H01L31/115
摘要： Hydrogenated amorphous silicon radiation detector devices having enhanced signal are disclosed. Specifically provided are transversely oriented electrode layers and layered detector configurations of amorphous silicon, the structure of which allow high electric fields upon application of a bias thereby beneficially resulting in a reduction in noise from contact injection and an increase in signal including avalanche multiplication and gain of the signal produced by incoming high energy radiation. These enhanced radiation sensitive devices can be used as measuring and detection means for visible light, low energy photons and high energy ionizing particles such as electrons, x-rays, alpha particles, beta particles and gamma radiation. Particular utility of the device is disclosed for precision powder crystallography and biological identification.
摘要翻译：公开了具有增强信号的氢化非晶硅辐射检测器装置。具体提供的是非晶硅的横向取向的电极层和分层检测器配置，其结构在施加偏压时允许高电场，从而有利地导致接触注入中的噪声降低，并且包括雪崩倍增和由高能辐射产生的信号。这些增强的辐射敏感设备可以用作可见光，低能量光子和高能电离粒子如电子，x射线，α粒子，β粒子和γ辐射的测量和检测手段。公开了该装置的特殊用途，用于精密粉末晶体学和生物鉴定。

3. 发明授权

US4785186A Amorphous silicon ionizing particle detectors 失效
标题翻译：非晶硅电离粒子探测器
公开(公告)号：US4785186A
公开(公告)日：1988-11-15
申请号：US921302
申请日：1986-10-21
申请人： Robert A. Street , Victor P. Mendez , Selig N. Kaplan
发明人： Robert A. Street , Victor P. Mendez , Selig N. Kaplan
IPC分类号： G01T1/24 , H01L31/0232 , H01L31/0376 , H01L31/117 , H01L31/118
CPC分类号： H01L31/118 , G01T1/24 , G01T1/242 , H01L31/02322 , H01L31/03762 , H01L31/117 , Y02E10/548
摘要： Amorphous silicon ionizing particle detectors having a hydrogenated amorphous silicon (a--Si:H) thin film deposited via plasma assisted chemical vapor deposition techniques are utilized to detect the presence, position and counting of high energy ionizing particles, such as electrons, x-rays, alpha particles, beta particles and gamma radiation.
摘要翻译：利用通过等离子体辅助化学气相沉积技术沉积的氢化非晶硅（a-Si：H）薄膜的非晶硅电离粒子检测器来检测高能电离粒子如电子，X射线的存在，位置和计数，α粒子，β粒子和γ辐射。

4. 发明申请

US20140041504A1 Mechanical Method For Producing Micro- Or Nano-Scale Textures 有权
标题翻译：用于生产微尺度或纳米尺度纹理的机械方法
公开(公告)号：US20140041504A1
公开(公告)日：2014-02-13
申请号：US13569153
申请日：2012-08-07
申请人： David Eric Schwartz , Matthew D. Eisaman , Sourobh Raychaudhuri , Philipp H. Schmaelzle , Robert A. Street , Sean Garner , Baomin Xu , Jiye Lee
发明人： David Eric Schwartz , Matthew D. Eisaman , Sourobh Raychaudhuri , Philipp H. Schmaelzle , Robert A. Street , Sean Garner , Baomin Xu , Jiye Lee
IPC分类号： B26D3/08
CPC分类号： B26D3/08 , B26D3/06 , H01L2251/105 , Y10T83/0333 , Y10T83/0341
摘要： A mechanical method for producing micro-scale and nano-scale textures that facilitates, for example, the cost-effective production of nanostructures on large-scale substrates, e.g., during the large-scale production of thin-film solar cells. A “scratcher” (multi-pointed abrasion mechanism) is maintained in a precise position relative to a target substrate such that micron-level features (protrusions) extending from the scratcher's base structure are precisely positioned to contact a surface material layer of the target substrate with a predetermined amount of force, and then moved relative to the substrate (e.g., by way of a conveying mechanism) while maintaining the pressing force such that the micron-level features define elongated parallel nano-scale grooves and/or form nano-scale ridges in the surface material layer (i.e., by mechanically displacing) portions of the surface material layer to form the nano-scale grooves/ridges).
摘要翻译：用于生产微尺度和纳米尺度织构的机械方法，其例如在大规模生产基片上，例如在薄膜太阳能电池的大规模生产过程中有助于例如成本有效地生产纳米结构。 “刮刀”（多点磨损机构）被保持在相对于目标基板的精确位置，使得从刮刀基部结构延伸的微米级特征（突起）被精确地定位成与目标基板的表面材料层接触以预定量的力，然后相对于基底（例如，通过输送机构）移动，同时保持挤压力，使得微米级特征限定细长的平行纳米级凹槽和/或形成纳米尺度表面材料层中的隆起（即，通过机械移位）表面材料层的部分以形成纳米尺度的沟槽/脊）。

5. 发明授权

US08158465B2 Vertical coffee-stain method for forming self-organized line structures 有权
标题翻译：用于形成自组织线结构的垂直咖啡染色方法
公开(公告)号：US08158465B2
公开(公告)日：2012-04-17
申请号：US12484992
申请日：2009-06-15
申请人： Sanjiv Sambandan , Robert A. Street , Ana Claudia Arias
发明人： Sanjiv Sambandan , Robert A. Street , Ana Claudia Arias
IPC分类号： H01L21/336
CPC分类号： B82Y40/00 , B05D1/185 , H01L21/288 , H01L21/76838 , H01L51/0022 , H01L51/0508
摘要： A “vertical” coffee-stain method for producing self-organized line structures and other very fine features that involves disposing a target structure in a solution made up of a fine particle solute dispersed in a liquid solvent such that a “waterline” is formed by the upper (liquid/air) surface of the solution on a targeted linear surface region of the substrate. The solvent is then caused to evaporate at a predetermined rate such that a portion of the solute forms a self-organized “coffee-stain” line structure on the straight-line portion of the substrate surface contacted by the receding waterline. The substrate and staining solution are selected such that the liquid solvent has a stronger attraction to the substrate surface than to itself to produce the required pinning and upward curving waterline. The target structure is optionally periodically raised to generate parallel lines that are subsequently processed to form, e.g., TFTs for large-area electronic devices.
摘要翻译：用于生产自组织线结构的“垂直”咖啡染色方法和其它非常细小的特征，其包括将目标结构设置在由分散在液体溶剂中的细颗粒溶质构成的溶液中，使得“水线”由溶液的上（液/空）表面在基材的目标线性表面区域上。然后使溶剂以预定的速率蒸发，使得一部分溶质在由后退水线接触的基底表面的直线部分上形成自组织的“咖啡污渍”线结构。选择底物和染色溶液使得液体溶剂对基底表面的吸引力比其本身具有更强的吸引力以产生所需的钉扎和向上弯曲的水线。目标结构可选地周期性地升高以产生随后被处理以形成例如用于大面积电子器件的TFT的平行线。

6. 发明申请

US20120031467A1 Solar Energy Harvesting System Using Luminescent Solar Concentrator With Distributed Outcoupling Structures And Microoptical Elements 有权
标题翻译：太阳能收集系统采用发光太阳能集中器与分布式输出耦合结构和微光学元件
公开(公告)号：US20120031467A1
公开(公告)日：2012-02-09
申请号：US12853270
申请日：2010-08-09
申请人： Philipp H. Schmaelzle , Robert A. Street
发明人： Philipp H. Schmaelzle , Robert A. Street
IPC分类号： H01L31/055 , F24J2/10
CPC分类号： F21V9/30 , F24S23/11 , F24S23/12 , F24S2023/85 , H01L31/0543 , H01L31/0547 , Y02E10/40 , Y02E10/52
摘要： A solar energy harvesting system including a luminescent solar concentrator for generating light emissions in response to received sunlight, and for redirecting and concentrating the light emissions onto a predetermined target (e.g., a PV cell). The luminescent solar concentrator includes a light-guiding slab containing a luminescent material that generates the light emissions, spaced-apart outcoupling structures that provide a distributed outcoupling of the light emissions through predetermined locations on one of the “broadside” (e.g., upper or lower) surfaces of the light-guiding slab, and optical elements positioned to redirect the outcoupled light emissions such that the light emissions are concentrated onto the predetermined target.
摘要翻译：一种太阳能收集系统，包括用于响应于接收到的太阳光而产生光发射的发光太阳能集中器，以及用于将光发射重定向并集中到预定目标（例如，PV电池）上。发光太阳能集中器包括一个导光板，它包含产生光发射的发光材料，间隔开的耦合结构，其通过在“宽边”之一（例如，上部或下部）上的预定位置提供光发射的分布式输出耦合）表面，以及定位成重定向输出耦合的发光的光学元件，使得发光集中在预定目标上。

7. 发明申请

US20120031396A1 Luminescent Solar Concentrator With Distributed Outcoupling Structures And Microoptical Elements 有权
标题翻译：发光太阳能集中器与分布式输出耦合结构和微光学元件
公开(公告)号：US20120031396A1
公开(公告)日：2012-02-09
申请号：US12853266
申请日：2010-08-09
申请人： Philipp H. Schmaelzle , Robert A. Street
发明人： Philipp H. Schmaelzle , Robert A. Street
IPC分类号： F24J2/18
CPC分类号： H01L31/0543 , F24S23/11 , F24S23/12 , F24S2023/85 , H01L31/0547 , Y02E10/40 , Y02E10/52
摘要： A luminescent solar concentrator including a light-guiding slab containing a luminescent material that generates light emissions in response to received sunlight, spaced-apart outcoupling structures that provide a distributed outcoupling of the light emissions through predetermined locations on one of the “broadside” (e.g., upper or lower) surfaces of the light-guiding slab, and optical elements positioned to redirect the outcoupled light emissions such that the light emissions are concentrated onto a predetermined target (e.g., a PV cell). Each optical element includes a collimating surface portion and optional returner surface.
摘要翻译：一种发光太阳能集中器，包括含有发光材料的导光板，所述发光材料响应于接收到的太阳光而产生光发射，间隔开的耦合结构，其通过在“宽边”之一上的预定位置提供分布式耦合的发射。导光板的上表面或下表面）和定位成重定向输出耦合的发光的光学元件，使得光发射集中在预定目标（例如，PV电池）上。每个光学元件包括准直表面部分和可选的返回器表面。

8. 发明授权

US07867916B2 Horizontal coffee-stain method using control structure to pattern self-organized line structures 有权
标题翻译：使用控制结构的水平咖啡染色方法来模拟自组织线结构
公开(公告)号：US07867916B2
公开(公告)日：2011-01-11
申请号：US12485007
申请日：2009-06-15
申请人： Sanjiv Sambandan , Robert A. Street , Ana Claudia Arias
发明人： Sanjiv Sambandan , Robert A. Street , Ana Claudia Arias
IPC分类号： H01L51/40 , H01L21/84 , H01L21/461 , H01L21/469
CPC分类号： B82Y40/00 , B05D1/185 , H01L21/288 , H01L21/76838 , H01L29/40 , H01L51/0022 , H01L51/0508
摘要： A modified coffee-stain method for producing self-organized line structures and other very fine features that involves disposing a solution puddle on a target substrate, and then controlling the peripheral boundary shape of the puddle using a control structure that contacts the puddle's upper surface. The solution is made up of a fine particle solute dispersed in a liquid solvent wets and becomes pinned to both the target substrate and the control structure. The solvent is then caused to evaporate at a predetermined rate such that a portion of the solute forms a self-organized “coffee-stain” line structure on the target substrate surface that is contacted by the peripheral puddle boundary. The target structure is optionally periodically raised to generate parallel lines that are subsequently processed to form, e.g., TFTs for large-area electronic devices.
摘要翻译：一种用于生产自组织线结构和其它非常精细特征的改进的咖啡染色方法，其涉及在目标基底上设置溶液池，然后使用接触水坑上表面的控制结构来控制熔池的外围边界形状。溶液由分散在液体溶剂润湿剂中的细颗粒溶质组成，并被固定到靶基质和对照结构两者上。然后使溶剂以预定的速率蒸发，使得溶质的一部分在目标衬底表面上形成与周边水泥边界接触的自组织的“咖啡污渍”线结构。目标结构可选地周期性地升高以产生随后被处理以形成例如用于大面积电子器件的TFT的平行线。

9. 发明申请

US20100099220A1 ELECTRONIC DEVICE WITH UNIQUE ENCODING 有权
标题翻译：具有独特编码的电子设备
公开(公告)号：US20100099220A1
公开(公告)日：2010-04-22
申请号：US12645987
申请日：2009-12-23
申请人： Robert A. Street , Ana Claudia Arias
发明人： Robert A. Street , Ana Claudia Arias
IPC分类号： H01L21/50
CPC分类号： H01L51/0005 , H01L27/1285 , H01L27/1288 , H01L27/1292 , H01L27/283 , H01L51/0545
摘要： An electronic device comprising a thin film transistor (TFT) array and manufacturing methods thereof according to various embodiments. Jet-printed material is deposited on selected partially formed transistors to form completed transistors. Thus, a selected number of the TFTs are connected into the circuit while the remainder of the TFTs are not connected. An electronic read-out of the array identifies the specific array by distinguishing the connected TFTs from the unconnected ones. For a TFT array with n elements there are 2n alternative configurations; therefore, a relatively small number of TFTs can uniquely identify a huge number of devices. Such uniquely encoded devices have applications for encryption, identification and personalization of electronic systems.
摘要翻译：一种包括薄膜晶体管（TFT）阵列的电子器件及其制造方法。喷射印刷材料沉积在选定的部分形成的晶体管上以形成完整的晶体管。因此，选择数量的TFT连接到电路中，而其余TFT不连接。阵列的电子读出通过将连接的TFT与未连接的TFT区分开来识别特定的阵列。对于具有n个元件的TFT阵列，有2n个备选配置; 因此，相对较少的TFT可以唯一地识别大量的设备。这种唯一编码的设备具有用于电子系统的加密，识别和个性化的应用。

10. 发明申请

US20100067280A1 CHARGE MAPPING MEMORY ARRAY FORMED OF MATERIALS WITH MUTABLE ELECTRICAL CHARACTERISTICS 有权
公开(公告)号：US20100067280A1
公开(公告)日：2010-03-18
申请号：US12622308
申请日：2009-11-19
申请人： William S. Wong , Sanjiv Sambandan , Tse Nga Ng , Robert A. Street
发明人： William S. Wong , Sanjiv Sambandan , Tse Nga Ng , Robert A. Street
IPC分类号： G11C5/06
CPC分类号： G11C13/003 , B82Y10/00 , G11C11/22 , G11C13/0014 , G11C13/0016 , G11C2213/53 , G11C2213/74 , G11C2213/79 , G11C2213/80
摘要： A memory cell array including a data line; a capacitor; and a transistor coupled between the data line and the capacitor. At least one of the capacitor and the transistor includes a material with a mutable electrical characteristic.A memory cell array including a first transistor coupled between a first node, a second node, and a third node; and a second transistor coupled between the second node and a fourth node. The first transistor includes a material with a mutable electrical characteristic.

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