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1. 发明授权

US5734195A Semiconductor wafer for epitaxially grown devices having a sub-surface getter region 失效
标题翻译：用于具有亚表面吸气剂区域的外延生长装置的半导体晶片
公开(公告)号：US5734195A
公开(公告)日：1998-03-31
申请号：US636887
申请日：1996-04-24
申请人： Ritsuo Takizawa , Takahisa Kusaka , Takayoshi Higuchi , Hideo Kanbe , Masanori Ohashi
发明人： Ritsuo Takizawa , Takahisa Kusaka , Takayoshi Higuchi , Hideo Kanbe , Masanori Ohashi
IPC分类号： H01L21/20 , H01L21/265 , H01L21/322 , H01L27/148 , H01L29/167 , H01L29/36 , H01L29/04 , H01L21/306
CPC分类号： H01L21/26506 , H01L21/3221 , H01L21/3225 , H01L29/167 , H01L29/36 , Y10S257/913
摘要： In a semiconductor wafer according to this invention, an epitaxial layer is formed on the surface of a semiconductor substrate, a second element which is not the same but homologous as a first element constituting the semiconductor substrate is present to have a peak concentration on the semiconductor substrate side rather than the surface, and this peak concentration is 1.times.10.sup.16 atoms/cm.sup.3 or more.
摘要翻译：在根据本发明的半导体晶片中，在半导体衬底的表面上形成外延层，存在与构成半导体衬底的第一元件不同但同源的第二元素，以在半导体衬底上具有峰值浓度衬底侧而不是表面，并且该峰浓度为1×1016原子/ cm3以上。

2. 发明授权

US5874348A Semiconductor wafer and method of manufacturing same 失效
公开(公告)号：US5874348A
公开(公告)日：1999-02-23
申请号：US651656
申请日：1996-05-21
申请人： Ritsuo Takizawa , Takahisa Kusaka , Takayoshi Higuchi , Hideo Kanbe , Masanori Ohashi
发明人： Ritsuo Takizawa , Takahisa Kusaka , Takayoshi Higuchi , Hideo Kanbe , Masanori Ohashi
IPC分类号： H01L21/20 , H01L21/265 , H01L21/322 , H01L27/148 , H01L29/167 , H01L29/36
CPC分类号： H01L21/26506 , H01L21/3221 , H01L21/3225 , H01L29/167 , H01L29/36 , Y10S257/913
摘要： In a semiconductor wafer according to this invention, an epitaxial layer is formed on the surface of a semiconductor substrate, a second element which is not the same but homologous as a first element constituting the semiconductor substrate is present to have a peak concentration on the semiconductor substrate side rather than the surface, and this peak concentration is 1.times.10.sup.16 atoms/cm.sup.3 or more.

3. 发明授权

US6140213A Semiconductor wafer and method of manufacturing same 失效
标题翻译：半导体晶片及其制造方法
公开(公告)号：US6140213A
公开(公告)日：2000-10-31
申请号：US84006
申请日：1998-05-26
申请人： Ritsuo Takizawa , Takahisa Kusaka , Takayoshi Higuchi , Hideo Kanbe , Masanori Ohashi
发明人： Ritsuo Takizawa , Takahisa Kusaka , Takayoshi Higuchi , Hideo Kanbe , Masanori Ohashi
IPC分类号： H01L21/20 , H01L21/265 , H01L21/322 , H01L27/148 , H01L29/167 , H01L29/36 , H01L21/205
CPC分类号： H01L21/26506 , H01L21/3221 , H01L21/3225 , H01L29/167 , H01L29/36 , Y10S257/913
摘要： In a semiconductor wafer according to this invention, an epitaxial layer is formed on the surface of a semiconductor substrate, a second element which is not the same but homologous as a first element constituting the semiconductor substrate is present to have a peak concentration on the semiconductor substrate side rather than the surface, and this peak concentration is 1.times.10.sup.16 atoms/cm.sup.3 or more.
摘要翻译：在根据本发明的半导体晶片中，在半导体衬底的表面上形成外延层，存在与构成半导体衬底的第一元件不同但同源的第二元素，以在半导体衬底上具有峰值浓度衬底侧而不是表面，并且该峰浓度为1×1016原子/ cm3以上。

4. 发明授权

US4570325A Manufacturing a field oxide region for a semiconductor device 失效
标题翻译：制造用于半导体器件的场氧化物区域
公开(公告)号：US4570325A
公开(公告)日：1986-02-18
申请号：US680909
申请日：1984-12-12
申请人： Takayoshi Higuchi
发明人： Takayoshi Higuchi
IPC分类号： H01L21/033 , H01L21/762 , H01L21/76 , H01L21/425
CPC分类号： H01L21/76237 , H01L21/0332 , H01L21/0337 , H01L21/0338 , H01L21/76216
摘要： A method of manufacturing a semiconductor device in which a micro-patterned field oxide film can be formed includes the steps of: sequentially forming an oxidation-resistive film and an oxidizable film on a semiconductor substrate; forming a window in a predetermined region of said oxidizable film, in which said oxidation-resistive film is exposed; performing thermal oxidation to said oxidizable film so as to convert it into an insulating film and for narrowing a width of said window by volume expansion due to conversion; forming a field oxide film in a region of said semiconductor substrate defined by said window of said insulating film; and forming a semiconductor element in the region of said semiconductor substrate isolated by said field oxide film.
摘要翻译：可以形成微图形场氧化膜的半导体器件的制造方法包括以下步骤：在半导体衬底上依次形成氧化膜和可氧化膜; 在所述可氧化膜的预定区域中形成窗口，其中暴露所述抗氧化膜; 对所述可氧化膜进行热氧化，以便将其转化为绝缘膜，并且通过由于转化而产生的体积膨胀来缩小所述窗口的宽度; 在由所述绝缘膜的所述窗口限定的所述半导体衬底的区域中形成场氧化物膜; 以及在由所述场氧化物膜隔离的所述半导体衬底的区域中形成半导体元件。

5. 发明授权

US5106780A Semiconductor device and method of manufacturing the same 失效
标题翻译：半导体器件及其制造方法
公开(公告)号：US5106780A
公开(公告)日：1992-04-21
申请号：US648515
申请日：1991-01-30
申请人： Takayoshi Higuchi
发明人： Takayoshi Higuchi
IPC分类号： H01L21/60
CPC分类号： H01L21/76897 , H01L2924/0002
摘要： The present invention provides a semiconductor device, comprising a substrate, a first insulation layer formed on the substrate, a first wiring layer formed on the first insulation layer, a second insulation layer formed on the first wiring layer and having a contact hole, and a third insulation layer formed on the second insulation layer, said third insulation layer being in contact with the first wiring layer via the contact hole.
摘要翻译：本发明提供一种半导体器件，包括基板，形成在基板上的第一绝缘层，形成在第一绝缘层上的第一布线层，形成在第一布线层上并具有接触孔的第二绝缘层，以及第三绝缘层，形成在第二绝缘层上，所述第三绝缘层经由接触孔与第一布线层接触。

6. 发明授权

US5014109A Miniaturization of a contact hole in a semiconductor device 失效
标题翻译：半导体器件中的接触孔的小型化
公开(公告)号：US5014109A
公开(公告)日：1991-05-07
申请号：US388037
申请日：1989-08-01
申请人： Takayoshi Higuchi
发明人： Takayoshi Higuchi
IPC分类号： H01L21/768 , H01L21/60 , H01L29/78 , H01L23/48 , H01L29/44 , H01L29/52 , H01L29/62
CPC分类号： H01L21/76897 , H01L2924/0002
摘要： The present invention provides a semiconductor device, comprising a substrate, a first insulation layer formed on the substrate, a first wiring layer formed on the first insulation layer, a second insulation layer formed on the first wiring layer and having a contact hole, and a third insulation layer formed on the second insulation layer, said third insulation layer being in contact with the first wiring layer via the contact hole.

7. 发明授权

US5160988A Semiconductor device with composite surface insulator 失效
标题翻译：具有复合表面绝缘体的半导体器件
公开(公告)号：US5160988A
公开(公告)日：1992-11-03
申请号：US657934
申请日：1991-02-25
申请人： Takayoshi Higuchi , Souichi Sugiura
发明人： Takayoshi Higuchi , Souichi Sugiura
IPC分类号： H01L27/04 , H01L21/822 , H01L21/8242 , H01L27/10 , H01L27/108
CPC分类号： H01L27/10829
摘要： A semiconductor device comprises a substrate, first insulation layers formed on the substrate, and a second insulation layer formed on the substrate. The second insulation layer, which acts as a dielectric material of a capacitor component of the semiconductor device, is thinner than each of the first insulation layers.
摘要翻译：半导体器件包括衬底，形成在衬底上的第一绝缘层和形成在衬底上的第二绝缘层。充当半导体器件的电容器部件的电介质材料的第二绝缘层比第一绝缘层薄。

8. 发明授权

US4684740A Production of 2,6-bis (4-hydroxy-3,5-dimethoxyphenyl-3,7-dioxabicyclo (3.3.0) octane 失效
标题翻译：制备2,6-双（4-羟基-3,5-二甲氧基苯基-3,7-二氧杂二环（3.3.0）辛烷
公开(公告)号：US4684740A
公开(公告)日：1987-08-04
申请号：US840757
申请日：1986-03-18
申请人： Takayoshi Higuchi , Mitsuhiko Tanahashi , Motoo Mastukura
发明人： Takayoshi Higuchi , Mitsuhiko Tanahashi , Motoo Mastukura
IPC分类号： A61K31/34 , A61K36/00 , A61K36/24 , A61K36/25 , A61K36/28 , A61P3/00 , C07D493/04
CPC分类号： C07D493/04
摘要： This invention discloses a process for producing 2,6-bis (4-hydroxy-3,5-dimethoxyphenyl)-3,7-dioxabicyclo [3.3.0] octane, i.e. syringaresinol and stereo-isomers thereof, from plants which contain lignin with syringyl unit. The process comprises heating plant under pressure in hydrous condition, and then quickly discharging them therefrom into an environment at atmospheric pressure so as to explode into pieces and subjecting the fine pieces to extraction with organic solvent such as methanol and acetone or an alkaline solution such as sodium hydroxide and purification. Syringaresinols are useful like ginseng as a tonic.
摘要翻译：本发明公开了一种从含有木质素的植物中生产2,6-双（4-羟基-3,5-二甲氧基苯基）-3,7-二氧杂二环[3.3.0]辛烷（即丁香腈和其立体异构体）的方法，丁香单位。该方法包括在含水条件下加压加压装置，然后迅速将其从大气压下排放到大气压环境中，从而爆炸成碎片，并用有机溶剂如甲醇和丙酮或如碱性溶液氢氧化钠并纯化。丁香醇可以像人参作为补品一样有用。

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