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1. 发明申请

US20080197421A1 Semiconductor device and method for manufacturing the same 审中-公开
标题翻译：半导体装置及其制造方法
公开(公告)号：US20080197421A1
公开(公告)日：2008-08-21
申请号：US11896164
申请日：2007-08-30
申请人： Riichiro Mitsuhashi , Raghunath Singanamalla
发明人： Riichiro Mitsuhashi , Raghunath Singanamalla
IPC分类号： H01L29/94 , H01L21/336
CPC分类号： H01L21/82345 , H01L21/28088 , H01L21/823842 , H01L27/088 , H01L27/092
摘要： A semiconductor device includes a p-type active region and an n-type active region which are formed in a semiconductor substrate and a p-type MISFET including a gate insulating film formed on the p-type active region and a first gate electrode including a first electrode formation film of which upper part has a concentration of La higher than the other part thereof. The semiconductor device further includes an n-type MISFET including a gate insulating film formed on the n-type active region and a second gate electrode including a second electrode formation film of which upper part has a concentration of Al higher than the other part thereof.
摘要翻译：半导体器件包括形成在半导体衬底中的p型有源区和n型有源区，以及包括形成在p型有源区上的栅极绝缘膜的p型MISFET和包括第一电极形成膜的上部具有比其他部分高的La的浓度。半导体器件还包括n型MISFET，其包括形成在n型有源区上的栅极绝缘膜和第二栅电极，第二栅极包括第二电极形成膜，其上部的浓度比其他部分高。

2. 发明申请

US20080237728A1 Semiconductor device and method for manufacturing the same 审中-公开
标题翻译：半导体装置及其制造方法
公开(公告)号：US20080237728A1
公开(公告)日：2008-10-02
申请号：US11976964
申请日：2007-10-30
申请人： Riichiro Mitsuhashi , Kota Oikawa , Osullivan Barry , Stefan Kubicek
发明人： Riichiro Mitsuhashi , Kota Oikawa , Osullivan Barry , Stefan Kubicek
IPC分类号： H01L27/092 , H01L21/3205
CPC分类号： H01L27/0922 , H01L21/28088 , H01L21/823842 , H01L29/4966 , H01L29/513 , H01L29/517
摘要： A semiconductor device includes: a p-type active region and an n-type active region which are formed in a semiconductor substrate; a first MISFET including a first gate insulating film formed on the p-type active region and a first gate electrode formed on the first gate insulating film and including a first electrode formation film containing a metal element; and a second MISFET including a second gate insulating film formed on the n-type active region and a second gate electrode formed on the second gate insulating film and including a second electrode formation film. The second electrode formation film contains the same metal element as the first electrode formation film and has an oxygen content higher than the first electrode formation film.
摘要翻译：半导体器件包括：形成在半导体衬底中的p型有源区和n型有源区; 第一MISFET，包括形成在p型有源区上的第一栅极绝缘膜和形成在第一栅极绝缘膜上的第一栅极，并且包括含有金属元素的第一电极形成膜; 以及包括形成在所述n型有源区上的第二栅极绝缘膜和形成在所述第二栅极绝缘膜上并包括第二电极形成膜的第二栅电极的第二MISFET。第二电极形成膜包含与第一电极形成膜相同的金属元素，并且具有高于第一电极形成膜的氧含量。

3. 发明申请

US20110008954A1 INSULATING BUFFER FILM AND HIGH DIELECTRIC CONSTANT SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME 审中-公开
标题翻译：绝缘缓冲膜和高介电常数半导体器件及其制造方法
公开(公告)号：US20110008954A1
公开(公告)日：2011-01-13
申请号：US12880738
申请日：2010-09-13
申请人： Shigenori HAYASHI , Riichiro Mitsuhashi
发明人： Shigenori HAYASHI , Riichiro Mitsuhashi
IPC分类号： H01L21/28
CPC分类号： H01L21/823842 , H01L21/28097 , H01L21/823835 , H01L29/513 , H01L29/517 , H01L29/518 , H01L29/66545
摘要： A semiconductor device includes: an n-transistor including a first gate insulating film made of a high-dielectric-constant material and a first gate electrode fully silicided with a metal, the first gate insulating film and the first gate electrode being formed in this order over a semiconductor region; and a p-transistor including a second gate insulating film made of the high-dielectric-constant material and a second gate electrode fully silicided with the metal, the second gate insulating film and the second gate electrode being formed in this order over the semiconductor region. If the metal has a work function larger than a Fermi level in potential energy of electrons of silicon, a metal concentration of the second gate electrode is higher than that of the first gate electrode whereas if the metal has a work function smaller than the Fermi level of silicon, a metal concentration of the second gate electrode is lower than that of the first gate electrode.
摘要翻译：半导体器件包括：n型晶体管，其包括由高介电常数材料制成的第一栅极绝缘膜和完全硅化金属的第一栅电极，第一栅极绝缘膜和第一栅电极按此顺序形成在半导体区域; 以及包括由高介电常数材料制成的第二栅极绝缘膜和完全硅化金属的第二栅电极的p晶体管，第二栅极绝缘膜和第二栅电极依次形成在半导体区域上。如果金属具有比硅的电子势能大于费米能级的功函数，则第二栅电极的金属浓度高于第一栅电极的金属浓度，而如果金属具有小于费米能级的功函数的硅，第二栅电极的金属浓度低于第一栅电极的金属浓度。

4. 发明授权

US07816244B2 Insulating buffer film and high dielectric constant semiconductor device and method for fabricating the same 有权
标题翻译：绝缘缓冲膜和高介电常数半导体器件及其制造方法
公开(公告)号：US07816244B2
公开(公告)日：2010-10-19
申请号：US12357818
申请日：2009-01-22
申请人： Shigenori Hayashi , Riichiro Mitsuhashi
发明人： Shigenori Hayashi , Riichiro Mitsuhashi
IPC分类号： H01L21/4763
CPC分类号： H01L21/823842 , H01L21/28097 , H01L21/823835 , H01L29/513 , H01L29/517 , H01L29/518 , H01L29/66545
摘要： A semiconductor device includes: an n-transistor including a first gate insulating film made of a high-dielectric-constant material and a first gate electrode fully silicided with a metal, the first gate insulating film and the first gate electrode being formed in this order over a semiconductor region; and a p-transistor including a second gate insulating film made of the high-dielectric-constant material and a second gate electrode fully silicided with the metal, the second gate insulating film and the second gate electrode being formed in this order over the semiconductor region. If the metal has a work function larger than a Fermi level in potential energy of electrons of silicon, a metal concentration of the second gate electrode is higher than that of the first gate electrode whereas if the metal has a work function smaller than the Fermi level of silicon, a metal concentration of the second gate electrode is lower than that of the first gate electrode.
摘要翻译：半导体器件包括：n型晶体管，其包括由高介电常数材料制成的第一栅极绝缘膜和完全硅化金属的第一栅电极，第一栅极绝缘膜和第一栅电极按此顺序形成在半导体区域; 以及包括由高介电常数材料制成的第二栅极绝缘膜和完全硅化金属的第二栅电极的p晶体管，第二栅极绝缘膜和第二栅电极依次形成在半导体区域上。如果金属具有比硅的电子势能大于费米能级的功函数，则第二栅电极的金属浓度高于第一栅电极的金属浓度，而如果金属具有小于费米能级的功函数的硅，第二栅电极的金属浓度低于第一栅电极的金属浓度。

5. 发明授权

US07495298B2 Insulating buffer film and high dielectric constant semiconductor device and method for fabricating the same 失效
标题翻译：绝缘缓冲膜和高介电常数半导体器件及其制造方法
公开(公告)号：US07495298B2
公开(公告)日：2009-02-24
申请号：US11371253
申请日：2006-03-09
申请人： Shigenori Hayashi , Riichiro Mitsuhashi
发明人： Shigenori Hayashi , Riichiro Mitsuhashi
IPC分类号： H01L29/94
CPC分类号： H01L21/823842 , H01L21/28097 , H01L21/823835 , H01L29/513 , H01L29/517 , H01L29/518 , H01L29/66545
摘要： A semiconductor device includes: an n-transistor including a first gate insulating film made of a high-dielectric-constant material and a first gate electrode fully silicided with a metal, the first gate insulating film and the first gate electrode being formed in this order over a semiconductor region; and a p-transistor including a second gate insulating film made of the high-dielectric-constant material and a second gate electrode fully silicided with the metal, the second gate insulating film and the second gate electrode being formed in this order over the semiconductor region. If the metal has a work function larger than a Fermi level in potential energy of electrons of silicon, a metal concentration of the second gate electrode is higher than that of the first gate electrode whereas if the metal has a work function smaller than the Fermi level of silicon, a metal concentration of the second gate electrode is lower than that of the first gate electrode.
摘要翻译：半导体器件包括：n型晶体管，其包括由高介电常数材料制成的第一栅极绝缘膜和完全硅化金属的第一栅电极，第一栅极绝缘膜和第一栅电极按此顺序形成在半导体区域; 以及包括由高介电常数材料制成的第二栅极绝缘膜和完全硅化金属的第二栅电极的p晶体管，第二栅极绝缘膜和第二栅电极依次形成在半导体区域上。如果金属具有比硅的电子势能大于费米能级的功函数，则第二栅电极的金属浓度高于第一栅电极的金属浓度，而如果金属具有小于费米能级的功函数的硅，第二栅电极的金属浓度低于第一栅电极的金属浓度。

6. 发明申请

US20070007564A1 Semiconductor device and method for fabricating the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US20070007564A1
公开(公告)日：2007-01-11
申请号：US11371253
申请日：2006-03-09
申请人： Shigenori Hayashi , Riichiro Mitsuhashi
发明人： Shigenori Hayashi , Riichiro Mitsuhashi
IPC分类号： H01L29/94
CPC分类号： H01L21/823842 , H01L21/28097 , H01L21/823835 , H01L29/513 , H01L29/517 , H01L29/518 , H01L29/66545
摘要： A semiconductor device includes: an n-transistor including a first gate insulating film made of a high-dielectric-constant material and a first gate electrode fully silicided with a metal, the first gate insulating film and the first gate electrode being formed in this order over a semiconductor region; and a p-transistor including a second gate insulating film made of the high-dielectric-constant material and a second gate electrode fully silicided with the metal, the second gate insulating film and the second gate electrode being formed in this order over the semiconductor region. If the metal has a work function larger than a Fermi level in potential energy of electrons of silicon, a metal concentration of the second gate electrode is higher than that of the first gate electrode whereas if the metal has a work function smaller than the Fermi level of silicon, a metal concentration of the second gate electrode is lower than that of the first gate electrode.
摘要翻译：半导体器件包括：n型晶体管，其包括由高介电常数材料制成的第一栅极绝缘膜和完全硅化金属的第一栅电极，第一栅极绝缘膜和第一栅电极按此顺序形成在半导体区域; 以及包括由高介电常数材料制成的第二栅极绝缘膜和完全硅化金属的第二栅电极的p晶体管，第二栅极绝缘膜和第二栅电极依次形成在半导体区域上。如果金属具有比硅的电子势能大于费米能级的功函数，则第二栅电极的金属浓度高于第一栅电极的金属浓度，而如果金属具有小于费米能级的功函数的硅，第二栅电极的金属浓度低于第一栅电极的金属浓度。

7. 发明申请

US20090130833A1 INSULATING BUFFER FILM AND HIGH DIELECTRIC CONSTANT SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME 有权
标题翻译：绝缘缓冲膜和高介电常数半导体器件及其制造方法
公开(公告)号：US20090130833A1
公开(公告)日：2009-05-21
申请号：US12357818
申请日：2009-01-22
申请人： Shigenori Hayashi , Riichiro Mitsuhashi
发明人： Shigenori Hayashi , Riichiro Mitsuhashi
IPC分类号： H01L21/4763
CPC分类号： H01L21/823842 , H01L21/28097 , H01L21/823835 , H01L29/513 , H01L29/517 , H01L29/518 , H01L29/66545
摘要： A semiconductor device includes: an n-transistor including a first gate insulating film made of a high-dielectric-constant material and a first gate electrode fully silicided with a metal, the first gate insulating film and the first gate electrode being formed in this order over a semiconductor region; and a p-transistor including a second gate insulating film made of the high-dielectric-constant material and a second gate electrode fully silicided with the metal, the second gate insulating film and the second gate electrode being formed in this order over the semiconductor region. If the metal has a work function larger than a Fermi level in potential energy of electrons of silicon, a metal concentration of the second gate electrode is higher than that of the first gate electrode whereas if the metal has a work function smaller than the Fermi level of silicon, a metal concentration of the second gate electrode is lower than that of the first gate electrode.
摘要翻译：半导体器件包括：n型晶体管，其包括由高介电常数材料制成的第一栅极绝缘膜和完全硅化金属的第一栅电极，第一栅极绝缘膜和第一栅电极按此顺序形成在半导体区域; 以及包括由高介电常数材料制成的第二栅极绝缘膜和完全硅化金属的第二栅电极的p晶体管，第二栅极绝缘膜和第二栅电极依次形成在半导体区域上。如果金属具有比硅的电子势能大于费米能级的功函数，则第二栅电极的金属浓度高于第一栅电极的金属浓度，而如果金属具有小于费米能级的功函数的硅，第二栅电极的金属浓度低于第一栅电极的金属浓度。

8. 发明授权

US06667246B2 Wet-etching method and method for manufacturing semiconductor device 失效
标题翻译：湿式蚀刻方法及半导体装置的制造方法
公开(公告)号：US06667246B2
公开(公告)日：2003-12-23
申请号：US10309038
申请日：2002-12-04
申请人： Riichiro Mitsuhashi , Masafumi Kubota , Shigenori Hayashi
发明人： Riichiro Mitsuhashi , Masafumi Kubota , Shigenori Hayashi
IPC分类号： H01L2131
CPC分类号： H01L21/28185 , H01L21/31111 , H01L29/517 , H01L29/66545
摘要： A substrate with a metal oxide film deposited thereon is annealed, and then the surface of the metal oxide film is exposed to a plasma, after which the metal oxide film is removed by wet-etching.
摘要翻译：对其上沉积有金属氧化物膜的基板进行退火，然后将金属氧化物膜的表面暴露于等离子体，之后通过湿法蚀刻除去金属氧化物膜。

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