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    • 3. 发明授权
    • Method of manufacturing SOI substrate
    • 制造SOI衬底的方法
    • US08187953B2
    • 2012-05-29
    • US12550520
    • 2009-08-31
    • Yuta EndoRyota ImahayashiRyosuke Murata
    • Yuta EndoRyota ImahayashiRyosuke Murata
    • H01L21/30
    • H01L21/76254H01L22/12H01L22/20
    • An object of the present invention is to improve use efficiency of a semiconductor substrate without lowering efficiency of a fabrication process. Another object of the present invention is to achieve cost reduction by effective use of a semiconductor substrate whose thickness is reduced due to repeated use in a process of manufacturing an SOI substrate. In a process of manufacturing an SOI substrate, a semiconductor substrate is used as a bond substrate a predetermined number of times, or as long as it meets predetermined conditions. In a case where a first single crystal semiconductor substrate cannot be used as a bond substrate, it is bonded to a second single crystal semiconductor substrate. Then, a stacked-layer substrate formed from the first single crystal semiconductor substrate and the second single crystal semiconductor substrate bonded to each other is used as a bond substrate in a process of manufacturing an SOI substrate.
    • 本发明的目的是提高半导体衬底的使用效率,而不会降低制造工艺的效率。 本发明的另一个目的是通过有效地利用在制造SOI衬底的过程中重复使用而减小厚度的半导体衬底来实现成本降低。 在制造SOI衬底的过程中,半导体衬底作为接合衬底使用预定次数,或者只要满足预定条件即可。 在第一单晶半导体衬底不能用作接合衬底的情况下,其结合到第二单晶半导体衬底。 然后,在制造SOI衬底的过程中,使用由第一单晶半导体衬底和彼此接合的第二单晶半导体衬底形成的叠层衬底作为接合衬底。