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    • 4. 发明申请
    • Film acoustically-coupled transformer
    • 薄膜声耦合变压器
    • US20050093655A1
    • 2005-05-05
    • US10965637
    • 2004-10-13
    • John LarsonRichard RubyStephen Ellis
    • John LarsonRichard RubyStephen Ellis
    • H03H9/02H03H9/13H03H9/58H03H9/60
    • H03H9/605H03H9/02102H03H9/132H03H9/175H03H9/584H03H9/587H03H9/589
    • One embodiment of the film acoustically-coupled transformer (FACT) includes a decoupled stacked bulk acoustic resonator (DSBAR) having a lower film bulk acoustic resonator (FBAR) an upper FBAR stacked on the lower FBAR, and, between the FBARs, an acoustic decoupler comprising a layer of acoustic decoupling material. Each FBAR has opposed planar electrodes with a piezoelectric element between them. The FACT additionally has first terminals electrically connected to the electrodes of one FBAR and second terminals electrically connected to the electrodes of the other FBAR. Another embodiment has decoupled stacked bulk acoustic resonators (DSBARs), each as described above, a first electrical circuit interconnecting the lower FBARs, and a second electrical circuit interconnecting the upper FBARs. The FACT provides impedance transformation, can linking single-ended circuitry with balanced circuitry or vice versa and electrically isolates primary and secondary. Some embodiments are additionally electrically balanced.
    • 薄膜声耦合变压器(FACT)的一个实施例包括具有下薄膜体声波谐振器(FBAR)的解耦堆叠体声波谐振器(DSBAR),堆叠在下FBAR上的上FBAR,以及在FBAR之间,声解耦器 包括声去耦材料层。 每个FBAR具有相对的平面电极,它们之间具有压电元件。 FACT还具有电连接到一个FBAR的电极的第一端子和电连接到另一个FBAR的电极的第二端子。 另一个实施例已经解耦了堆叠的体声波谐振器(DSBAR),每个如上所述,将第一电路互连到下FBAR,以及互连上FBAR的第二电路。 FACT提供阻抗变换,可以将单端电路与平衡电路相连,反之亦然,并将初级和次级电隔离。 一些实施例另外电平衡。
    • 5. 发明申请
    • Impedance transforming bulk acoustic wave baluns
    • 阻抗变换体积声波平衡不平衡变压器
    • US20070176710A1
    • 2007-08-02
    • US11343117
    • 2006-01-30
    • Tiberiu JamnealaJohn LarsonRichard Ruby
    • Tiberiu JamnealaJohn LarsonRichard Ruby
    • H03H9/56
    • H03H9/584H03H9/0095H03H9/587H03H9/589
    • A bulk acoustic wave device includes an acoustic decoupler between first and second film bulk acoustic resonators (FBARs). The first FBAR is resonant at a resonant frequency of the device and includes first and second planar electrodes abutting opposite sides of a first resonator volume free of any intervening electrodes and containing piezoelectric material disposed for acoustic vibrations parallel to a propagation axis normal to the first and second electrodes. The first FBAR has a first electrical impedance parallel to the propagation axis. The second FBAR is resonant at the resonant frequency and includes third and fourth planar electrodes abutting opposite sides of a second resonator volume free of any intervening electrodes and containing piezoelectric material disposed for acoustic vibrations parallel to the propagation axis. The second FBAR has a second electrical impedance parallel to the propagation axis and different from the first electrical impedance.
    • 体声波器件包括第一和第二膜体声波谐振器(FBAR)之间的声耦合器。 第一FBAR以该器件的谐振频率谐振,并且包括第一和第二平面电极,该第一和第二平面电极邻接第一谐振器体的相对侧,第一谐振器体积不含任何中间电极,并且包含压电材料,该压电材料设置为平行于垂直于第一谐振器的传播轴的声振动, 第二电极。 第一个FBAR具有平行于传播轴的第一个电阻抗。 第二FBAR在谐振频率下谐振,并且包括第三和第四平面电极,其邻接没有任何中间电极的第二谐振器体的相对侧,并且包含被设置用于平行于传播轴的声学振动的压电材料。 第二FBAR具有平行于传播轴线并且不同于第一电阻抗的第二电阻抗。
    • 9. 发明申请
    • Thin-film acoustically-coupled transformer
    • 薄膜声耦合变压器
    • US20050093656A1
    • 2005-05-05
    • US10699481
    • 2003-10-30
    • John LarsonRichard Ruby
    • John LarsonRichard Ruby
    • H03H9/17H03H9/13H03H9/60H03H9/56
    • H03H9/605H01L2224/48091H01L2224/49175H03H9/132H03H9/584H03H9/587Y10T29/42H01L2924/00014
    • One embodiment of the acoustically-coupled transformer includes a stacked bulk acoustic resonator (SBAR) having a stacked pair of film bulk acoustic resonators (FBARs) with an acoustic decoupler between them. Each FBAR has opposed planar electrodes with piezoelectric material between them. The transformer additionally has first terminals electrically connected to the electrodes of one FBAR and second terminals electrically connected to the electrodes of the other FBAR. Another embodiment includes first and second stacked bulk acoustic resonators (SBARs), each as described above, a first electrical circuit connecting one FBARs of the first SBAR to one FBAR of the second SBAR, and a second electrical circuit connecting the other FBAR of the first SBAR to the other FBAR of the second SBAR. The transformer provides impedance transformation, can linking single-ended circuitry with balanced circuitry or vice versa and electrically isolates primary and secondary. Some embodiments are additionally electrically balanced.
    • 声耦合变压器的一个实施例包括具有堆叠的一对膜体声波谐振器(FBAR)的层叠体声波谐振器(SBAR),它们之间具有声耦合器。 每个FBAR都具有与它们之间的压电材料的平面电极。 变压器还具有电连接到一个FBAR的电极的第一端子和电连接到另一个FBAR的电极的第二端子。 另一个实施例包括如上所述的第一和第二层叠体声波谐振器(SBAR),将第一SBAR的一个FBAR与第二SBAR的一个FBAR连接的第一电路和连接第一SBAR的另一个FBAR的第二电路 SBAR到第二个SBAR的另一个FBAR。 变压器提供阻抗变换,可以将单端电路与平衡电路相连,反之亦然,电隔离一次和二次。 一些实施例另外电平衡。