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    • 2. 发明授权
    • Data signal amplifier with automatically controllable dynamic signal range
    • 数据信号放大器可自动控制动态信号范围
    • US06486808B1
    • 2002-11-26
    • US09978727
    • 2001-10-16
    • Edward SeppiEdward ShapiroGeorge ZentaiRichard Colbeth
    • Edward SeppiEdward ShapiroGeorge ZentaiRichard Colbeth
    • H03M184
    • H03M1/129H03M1/18H04N5/235H04N5/243H04N5/32
    • A preamplifier stage with dynamically controllable signal gain in a data signal processing circuit that includes a downstream analog-to-digital signal converter. The level of the data signal subsequent to its preamplification is monitored and the gain of the preamplifier stage is dynamically adjusted in response to such data signal transcending one or more predetermined thresholds. Hence, the effective dynamic range of the preamplifier stage is extended, thereby also effectively extending the dynamic range of the overall system beyond that to which it would have otherwise been limited by the dynamic range of the analog-to-digital signal converter. In accordance with a preferred embodiment of the invention, such a preamplifier is used in an X-ray imaging system such as that using flat panel solid state imaging devices.
    • 一种在包括下游模拟 - 数字信号转换器的数据信号处理电路中具有动态可控的信号增益的前置放大器级。 监视其预放大之后的数据信号的电平,并响应于超过一个或多个预定阈值的这种数据信号来动态调整前置放大器级的增益。 因此,前置放大器级的有效动态范围被扩展,从而也有效地扩展了整个系统的动态范围,超出了其将被模拟 - 数字信号转换器的动态范围所限制的范围。 根据本发明的优选实施例,这种前置放大器用于诸如使用平板固态成像装置的X射线成像系统中。
    • 5. 发明授权
    • Megavoltage imaging with a photoconductor based sensor
    • 用基于感光体的传感器进行Megavoltage成像
    • US07884438B2
    • 2011-02-08
    • US11193162
    • 2005-07-29
    • Larry Dean PartainGeorge Zentai
    • Larry Dean PartainGeorge Zentai
    • H01L27/146
    • G01T1/24
    • A photodetector for detecting megavoltage (MV) radiation comprises a semiconductor conversion layer having a first surface and a second surface disposed opposite the first surface, a first electrode coupled to the first surface, a second electrode coupled to the second surface, and a low density substrate including a detector array coupled to the second electrode opposite the semiconductor conversion layer. The photodetector includes a sufficient thickness of a high density material to create a sufficient number of photoelectrons from incident MV radiation, so that the photoelectrons can be received by the conversion layer and converted to a sufficient of recharge carriers for detection by the detector array.
    • 用于检测兆伏特(MV)辐射的光电检测器包括半导体转换层,其具有与第一表面相对布置的第一表面和第二表面,耦合到第一表面的第一电极,耦合到第二表面的第二电极和低密度 衬底,包括耦合到与半导体转换层相对的第二电极的检测器阵列。 光电检测器包括足够厚度的高密度材料以从入射的MV辐射产生足够数量的光电子,使得光电子能够被转换层接收并转换成足够的再充电载体,以便由检测器阵列检测。
    • 8. 发明申请
    • MEGAVOLTAGE IMAGING WITH A PHOTOCONDUCTOR BASED SENSOR
    • 基于光电晶体的传感器进行成像
    • US20110079729A1
    • 2011-04-07
    • US12965579
    • 2010-12-10
    • Larry Dean PartainGeorge Zentai
    • Larry Dean PartainGeorge Zentai
    • G01T1/24H01L31/115
    • G01T1/24
    • A photodetector for detecting megavoltage (MV) radiation comprises a semiconductor conversion layer having a first surface and a second surface disposed opposite the first surface, a first electrode coupled to the first surface, a second electrode coupled to the second surface, and a low density substrate including a detector array coupled to the second electrode opposite the semiconductor conversion layer. The photodetector includes a sufficient thickness of a high density material to create a sufficient number of photoelectrons from incident MV radiation, so that the photoelectrons can be received by the conversion layer and converted to a sufficient of recharge carriers for detection by the detector array.
    • 用于检测兆伏特(MV)辐射的光电检测器包括半导体转换层,其具有与第一表面相对布置的第一表面和第二表面,耦合到第一表面的第一电极,耦合到第二表面的第二电极和低密度 衬底,包括耦合到与半导体转换层相对的第二电极的检测器阵列。 光电检测器包括足够厚度的高密度材料以从入射的MV辐射产生足够数量的光电子,使得光电子能够被转换层接收并转换成足够的再充电载体,以便由检测器阵列检测。
    • 9. 发明授权
    • Voltage injector and detector using pixel array for printed circuit board testing
    • 电压注入器和检测器使用像素阵列进行印刷电路板测试
    • US07355385B2
    • 2008-04-08
    • US11192849
    • 2005-07-28
    • George Zentai
    • George Zentai
    • G01R31/26G01R31/02
    • G01R31/2812
    • One embodiment includes an injector pixel array having injector pixels each coupled to the bottom surface of a conductive material having a directional electrical conductivity only in a direction corresponding to a path between the bottom surface and top surface of the conductive material. Each injector pixel includes a semiconductor based switch coupled to a charge or voltage driver to inject a charge or voltage into each injector pixel. Embodiments, also include a detector pixel array having detector pixels each coupled to the bottom surface of the directionally conductive material. Each detector pixel includes a semiconductor based switch coupled to a charge or voltage storage capacitor to detect a charge or voltage at each detector pixel.
    • 一个实施例包括具有喷射器像素的喷射器像素阵列,每个喷射器像素分别耦合到具有定向导电性的导电材料的底表面,仅在对应于导电材料的底表面和顶表面之间的路径的方向上。 每个喷射器像素包括耦合到电荷或电压驱动器的基于半导体的开关,以将电荷或电压注入到每个注入器像素中。 实施例还包括具有每个耦合到定向传导材料的底表面的检测器像素的检测器像素阵列。 每个检测器像素包括耦合到电荷或电压存储电容器的基于半导体的开关,以检测每个检测器像素处的电荷或电压。
    • 10. 发明申请
    • Megavoltage imaging with a photoconductor based sensor
    • 用基于感光体的传感器进行Megavoltage成像
    • US20070023853A1
    • 2007-02-01
    • US11193162
    • 2005-07-29
    • Larry PartainGeorge Zentai
    • Larry PartainGeorge Zentai
    • H01L31/00
    • G01T1/24
    • A photodetector for detecting megavoltage (MV) radiation comprises a semiconductor conversion layer having a first surface and a second surface disposed opposite the first surface, a first electrode coupled to the first surface, a second electrode coupled to the second surface, and a low density substrate including a detector array coupled to the second electrode opposite the semiconductor conversion layer. The photodetector includes a sufficient thickness of a high density material to create a sufficient number of photoelectrons from incident MV radiation, so that the photoelectrons can be received by the conversion layer and converted to a sufficient of recharge carriers for detection by the detector array.
    • 用于检测兆伏特(MV)辐射的光电检测器包括半导体转换层,其具有与第一表面相对布置的第一表面和第二表面,耦合到第一表面的第一电极,耦合到第二表面的第二电极和低密度 衬底,包括耦合到与半导体转换层相对的第二电极的检测器阵列。 光电检测器包括足够厚度的高密度材料以从入射的MV辐射产生足够数量的光电子,使得光电子能够被转换层接收并转换成足够的再充电载体,以便由检测器阵列检测。