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    • 7. 发明授权
    • Duplexer incorporating thin-film bulk acoustic resonators (FBARs)
    • 掺入薄膜体声共振器(FBAR)的双工器
    • US06262637B1
    • 2001-07-17
    • US09324618
    • 1999-06-02
    • Paul D. BradleyJohn D. Larson, IIIRichard C. Ruby
    • Paul D. BradleyJohn D. Larson, IIIRichard C. Ruby
    • H03H954
    • H03H9/568H03H9/706
    • An FBAR-based duplexer that comprises a first port, a second port, a third port, a first band-pass filter connected between the first port and the third port and a series circuit connected between the second port and the third port. The first band-pass filter includes a first ladder circuit having shunt and series elements. Each of the elements of the first ladder circuit comprises a film bulk acoustic resonator (FBAR). The series circuit includes a 90° phase shifter in series with a second band-pass filter. The second band-pass filter includes a second ladder circuit having shunt and series elements. Each of the elements of the second ladder circuit comprises a film bulk acoustic resonator. A band-pass filter comprising shunt elements and series elements in which the series elements and the shunt elements are connected to form a ladder circuit, and each of the elements includes a film bulk acoustic resonator (FBAR).
    • 一种基于FBAR的双工器,包括连接在第一端口和第三端口之间的第一端口,第二端口,第三端口,第一带通滤波器以及连接在第二端口和第三端口之间的串联电路。 第一带通滤波器包括具有并联和串联元件的第一梯形电路。 第一梯形电路的每个元件包括膜体声波谐振器(FBAR)。 串联电路包括与第二带通滤波器串联的90°移相器。 第二带通滤波器包括具有分路和串联元件的第二梯形电路。 第二梯形电路的每个元件包括膜体声波谐振器。 一种带通滤波器,包括并联元件和串联元件,其中串联元件和分流元件连接以形成梯形电路,并且每个元件包括膜体声波谐振器(FBAR)。
    • 8. 发明授权
    • Bulk acoustic resonator perimeter reflection system
    • 体声共振器周边反射系统
    • US06424237B1
    • 2002-07-23
    • US09746525
    • 2000-12-21
    • Richard C. RubyJohn D. Larson, IIIPaul D. Bradley
    • Richard C. RubyJohn D. Larson, IIIPaul D. Bradley
    • H03H915
    • H03H9/173H03H9/0211H03H9/02118H03H9/132Y10T29/42
    • A bulk acoustic resonator having a high quality factor is formed on a substrate having a depression formed in a top surface of the substrate. The resonator includes a first electrode, a piezoelectric material and a second electrode. The first electrode is disposed on the top surface of the substrate and extends beyond the edges of the depression by a first distance to define a first region therebetween. The piezoelectric material is disposed on the top surface of the substrate and over the first electrode, and the second electrode is disposed on the piezoelectric material. The second electrode includes a portion that is located above the depression. The portion of the second electrode that is located over the depression has at least one edge that is offset from a corresponding edge of the depression by a second distance to define a second region therebetween. The first and second regions have different impedances, as a result of the different materials located in the two regions. In addition, the first and second distances are approximately equal to a quarter-wavelength of a sound wave travelling laterally across the respective region, such that reflections off of the edges of the regions constructively interfere to maximize the reflectivity of the resonator.
    • 具有高质量因素的体声波谐振器形成在具有形成在基板的顶表面中的凹陷的基板上。 谐振器包括第一电极,压电材料和第二电极。 第一电极设置在衬底的顶表面上并且延伸超过凹陷的边缘第一距离以限定它们之间的第一区域。 压电材料设置在基板的顶表面上并在第一电极上方,第二电极设置在压电材料上。 第二电极包括位于凹部上方的部分。 位于凹部上方的第二电极的部分具有至少一个边缘,该边缘与凹陷的对应边缘偏移第二距离,以限定它们之间的第二区域。 由于位于两个区域的不同材料,第一和第二区域具有不同的阻抗。 此外,第一和第二距离近似等于横过各个区域横向移动的声波的四分之一波长,使得区域边缘的反射构造地干扰以最大化谐振器的反射率。