专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US06787048B2 Method for producing thin bulk acoustic resonators (FBARs) with different frequencies on the same substrate by subtracting method and apparatus embodying the method 有权
标题翻译：通过减去实施该方法的方法和装置在同一基板上制造具有不同频率的薄体声波谐振器（FBAR）的方法
公开(公告)号：US06787048B2
公开(公告)日：2004-09-07
申请号：US09799202
申请日：2001-03-05
申请人： Paul D. Bradley , Richard C. Ruby , John D. Larson, III
发明人： Paul D. Bradley , Richard C. Ruby , John D. Larson, III
IPC分类号： H01B1300
CPC分类号： H03H9/564 , H03H3/04 , H03H2003/0428 , H03H2003/0471 , H04R17/10
摘要： A method for fabricating a resonator, and in particular, a thin film bulk acoustic resonator (FBAR), and a resonator embodying the method are disclosed. The resonator is fabricated on a substrate by fabricating a bottom electrode layer and a piezoelectric (PZ) layer over the bottom electrode layer. A selected portion of the PZ layer is partially etched. Then, a top electrode is fabricated over the selected portion of the PZ layer.
摘要翻译：公开了一种用于制造谐振器，特别是薄膜体声波谐振器（FBAR）的方法和体现该方法的谐振器。通过在底部电极层上制造底部电极层和压电（PZ）层，在衬底上制造谐振器。部分蚀刻PZ层的选定部分。然后，在PZ层的选定部分上制造顶部电极。

2. 发明授权

US06617249B2 Method for making thin film bulk acoustic resonators (FBARS) with different frequencies on a single substrate and apparatus embodying the method 有权
标题翻译：在单个基板上制造具有不同频率的薄膜体声波谐振器（FBARS）的方法和体现该方法的装置的方法
公开(公告)号：US06617249B2
公开(公告)日：2003-09-09
申请号：US09799148
申请日：2001-03-05
申请人： Richard C. Ruby , John D. Larson, III , Paul D. Bradley
发明人： Richard C. Ruby , John D. Larson, III , Paul D. Bradley
IPC分类号： H01L21302
CPC分类号： H03H9/564 , H03H3/04 , H03H2003/0428 , H03H2003/0471 , Y10S438/926 , Y10S438/94 , Y10S438/942 , Y10S438/97 , Y10S438/976
摘要： A method for fabricating a resonator, and in particular, a thin film bulk acoustic resonator (FBAR), and a resonator embodying the method are disclosed. An FBAR is fabricated on a substrate by introducing a mass loading top electrode layer. For a substrate having multiple resonators, the top mass loading electrode layer is introduced for only selected resonator to provide resonators having different resonance frequencies on the same substrate.
摘要翻译：公开了一种用于制造谐振器，特别是薄膜体声波谐振器（FBAR）的方法和体现该方法的谐振器。通过引入质量负载顶部电极层在基板上制造FBAR。对于具有多个谐振器的衬底，仅为选定的谐振器引入顶部质量负载电极层，以在同一衬底上提供具有不同谐振频率的谐振器。

3. 发明授权

US06566979B2 Method of providing differential frequency adjusts in a thin film bulk acoustic resonator (FBAR) filter and apparatus embodying the method 失效
公开(公告)号：US06566979B2
公开(公告)日：2003-05-20
申请号：US09799153
申请日：2001-03-05
申请人： John D. Larson, III , Richard C. Ruby , Paul D. Bradley
发明人： John D. Larson, III , Richard C. Ruby , Paul D. Bradley
IPC分类号： H03H956
CPC分类号： H03H9/564 , H03H3/04 , H03H2003/0428 , H03H2003/0471 , Y10T29/42
摘要： A method for fabricating a resonator, and in particular, a thin film bulk acoustic resonator (FBAR), and a resonator embodying the method are disclosed. A resonator is fabricated on a substrate, and its top electrode 56 is oxidized to form a oxide layer 58. For a substrate having multiple resonators, the top electrode 56 of only selected resonator is oxidized to provide resonators having different resonance frequencies on the same substrate.

4. 发明授权

US06262637B1 Duplexer incorporating thin-film bulk acoustic resonators (FBARs) 有权
标题翻译：掺入薄膜体声共振器（FBAR）的双工器
公开(公告)号：US06262637B1
公开(公告)日：2001-07-17
申请号：US09324618
申请日：1999-06-02
申请人： Paul D. Bradley , John D. Larson, III , Richard C. Ruby
发明人： Paul D. Bradley , John D. Larson, III , Richard C. Ruby
IPC分类号： H03H954
CPC分类号： H03H9/568 , H03H9/706
摘要： An FBAR-based duplexer that comprises a first port, a second port, a third port, a first band-pass filter connected between the first port and the third port and a series circuit connected between the second port and the third port. The first band-pass filter includes a first ladder circuit having shunt and series elements. Each of the elements of the first ladder circuit comprises a film bulk acoustic resonator (FBAR). The series circuit includes a 90° phase shifter in series with a second band-pass filter. The second band-pass filter includes a second ladder circuit having shunt and series elements. Each of the elements of the second ladder circuit comprises a film bulk acoustic resonator. A band-pass filter comprising shunt elements and series elements in which the series elements and the shunt elements are connected to form a ladder circuit, and each of the elements includes a film bulk acoustic resonator (FBAR).
摘要翻译：一种基于FBAR的双工器，包括连接在第一端口和第三端口之间的第一端口，第二端口，第三端口，第一带通滤波器以及连接在第二端口和第三端口之间的串联电路。第一带通滤波器包括具有并联和串联元件的第一梯形电路。第一梯形电路的每个元件包括膜体声波谐振器（FBAR）。串联电路包括与第二带通滤波器串联的90°移相器。第二带通滤波器包括具有分路和串联元件的第二梯形电路。第二梯形电路的每个元件包括膜体声波谐振器。一种带通滤波器，包括并联元件和串联元件，其中串联元件和分流元件连接以形成梯形电路，并且每个元件包括膜体声波谐振器（FBAR）。

5. 发明授权

US06424237B1 Bulk acoustic resonator perimeter reflection system 有权
标题翻译：体声共振器周边反射系统
公开(公告)号：US06424237B1
公开(公告)日：2002-07-23
申请号：US09746525
申请日：2000-12-21
申请人： Richard C. Ruby , John D. Larson, III , Paul D. Bradley
发明人： Richard C. Ruby , John D. Larson, III , Paul D. Bradley
IPC分类号： H03H915
CPC分类号： H03H9/173 , H03H9/0211 , H03H9/02118 , H03H9/132 , Y10T29/42
摘要： A bulk acoustic resonator having a high quality factor is formed on a substrate having a depression formed in a top surface of the substrate. The resonator includes a first electrode, a piezoelectric material and a second electrode. The first electrode is disposed on the top surface of the substrate and extends beyond the edges of the depression by a first distance to define a first region therebetween. The piezoelectric material is disposed on the top surface of the substrate and over the first electrode, and the second electrode is disposed on the piezoelectric material. The second electrode includes a portion that is located above the depression. The portion of the second electrode that is located over the depression has at least one edge that is offset from a corresponding edge of the depression by a second distance to define a second region therebetween. The first and second regions have different impedances, as a result of the different materials located in the two regions. In addition, the first and second distances are approximately equal to a quarter-wavelength of a sound wave travelling laterally across the respective region, such that reflections off of the edges of the regions constructively interfere to maximize the reflectivity of the resonator.
摘要翻译：具有高质量因素的体声波谐振器形成在具有形成在基板的顶表面中的凹陷的基板上。谐振器包括第一电极，压电材料和第二电极。第一电极设置在衬底的顶表面上并且延伸超过凹陷的边缘第一距离以限定它们之间的第一区域。压电材料设置在基板的顶表面上并在第一电极上方，第二电极设置在压电材料上。第二电极包括位于凹部上方的部分。位于凹部上方的第二电极的部分具有至少一个边缘，该边缘与凹陷的对应边缘偏移第二距离，以限定它们之间的第二区域。由于位于两个区域的不同材料，第一和第二区域具有不同的阻抗。此外，第一和第二距离近似等于横过各个区域横向移动的声波的四分之一波长，使得区域边缘的反射构造地干扰以最大化谐振器的反射率。

6. 发明授权

US06874211B2 Method for producing thin film bulk acoustic resonators (FBARs) with different frequencies on the same substrate by subtracting method and apparatus embodying the method 有权
标题翻译：通过减去实施该方法的方法和装置在同一基板上制造具有不同频率的薄膜体声共振器（FBAR）的方法
公开(公告)号：US06874211B2
公开(公告)日：2005-04-05
申请号：US09799205
申请日：2001-03-05
申请人： Paul D. Bradley , John D. Larson, III , Richard C. Ruby
发明人： Paul D. Bradley , John D. Larson, III , Richard C. Ruby
IPC分类号： H01L41/22 , H03H3/04 , H03H9/17 , H03H9/56 , H04R17/00 , H01B13/00 , H03H9/00
CPC分类号： H03H9/564 , H03H3/04 , H03H2003/0428 , H03H2003/0471 , Y10T29/42
摘要： A method for fabricating a resonator, and in particular, a thin film bulk acoustic resonator (FBAR), and a resonator embodying the method are disclosed. An FBAR is fabricated on a substrate by reducing mass from a top electrode layer. For a substrate having multiple resonators, mass is reduced from only selected resonator to provide resonators having different resonance frequencies on the same substrate.
摘要翻译：公开了一种用于制造谐振器，特别是薄膜体声波谐振器（FBAR）的方法和体现该方法的谐振器。通过减少从顶部电极层的质量而在衬底上制造FBAR。对于具有多个谐振器的衬底，仅从所选择的谐振器减小质量，以在同一衬底上提供具有不同谐振频率的谐振器。

7. 发明授权

US06483229B2 Method of providing differential frequency adjusts in a thin film bulk acoustic resonator (FBAR) filter and apparatus embodying the method 有权
公开(公告)号：US06483229B2
公开(公告)日：2002-11-19
申请号：US09799149
申请日：2001-03-05
申请人： John D. Larson, III , Paul D. Bradley , Richard C. Ruby
发明人： John D. Larson, III , Paul D. Bradley , Richard C. Ruby
IPC分类号： H01L4104
CPC分类号： H03H9/564 , H03H3/04 , H03H2003/0428 , H03H2003/0471
摘要： A method for fabricating a resonator, and in particular, a thin film bulk acoustic resonator (FBAR), and a resonator embodying the method are disclosed. An FBAR is fabricated on a substrate by mass loading piezoelectric (PZ) layer between two electrodes. For a substrate having multiple resonators, only selected resonator is mass loaded to provide resonators having different resonance frequencies on the same substrate.

8. 发明授权

US06469597B2 Method of mass loading of thin film bulk acoustic resonators (FBAR) for creating resonators of different frequencies and apparatus embodying the method 有权
标题翻译：用于产生不同频率的谐振器的薄膜体声共振器（FBAR）的质量加载方法和体现该方法的装置
公开(公告)号：US06469597B2
公开(公告)日：2002-10-22
申请号：US09799204
申请日：2001-03-05
申请人： Richard C. Ruby , Paul D. Bradley , John D. Larson, III
发明人： Richard C. Ruby , Paul D. Bradley , John D. Larson, III
IPC分类号： H03H956
CPC分类号： H03H9/564 , H03H3/04 , H03H2003/0428 , H03H2003/0471 , Y10T29/42
摘要： A method for fabricating a resonator, and in particular, a thin film bulk acoustic resonator (FBAR), and a resonator embodying the method are disclosed. An FBAR is fabricated on a substrate by introducing a mass loading electrode to a bottom electrode layer. For a substrate having multiple resonators, mass loading bottom electrode is introduced for only selected resonator to provide resonators having different resonance frequencies on the same substrate.
摘要翻译：公开了一种用于制造谐振器，特别是薄膜体声波谐振器（FBAR）的方法和体现该方法的谐振器。通过向底部电极层引入质量负载电极，在基板上制造FBAR。对于具有多个谐振器的基板，仅为所选择的谐振器引入质量负载底部电极，以在同一基板上提供具有不同谐振频率的谐振器。

9. 发明授权

US06954121B2 Method for controlling piezoelectric coupling coefficient in film bulk acoustic resonators and apparatus embodying the method 失效
标题翻译：用于控制膜体声波谐振器中的压电耦合系数的方法和体现该方法的装置
公开(公告)号：US06954121B2
公开(公告)日：2005-10-11
申请号：US10457737
申请日：2003-06-09
申请人： Paul D. Bradley , Yury Oshmyansky , Benjamin Yu , John D. Larson, III
发明人： Paul D. Bradley , Yury Oshmyansky , Benjamin Yu , John D. Larson, III
IPC分类号： H01L41/09 , H01L41/187 , H01L41/22 , H03H3/04 , H03H9/02 , H03H9/17 , H03H9/00
CPC分类号： H03H9/173 , H03H3/04 , H03H9/02149
摘要： An apparatus such as a thin film resonator has a bottom electrode, a top electrode, and a composite layer between the two electrodes. The composite layer includes a piezoelectric (PZ) layer having a first coupling coefficient and a coupling coefficient control (CCC) layer having a second coupling coefficient. By varying the relative thicknesses of the PZ layer and the CCC layer during the manufacturing process, the coupling coefficient of the resonator can be established (to any value between the first coupling coefficient and the second coupling coefficient) with minimal impact on resonant frequency. Further, it is relatively less difficult to fabricate the PZ layer and the CCC layer having the desired coupling coefficient (as a combination of the first coupling coefficient and the second coupling coefficient) compared to the difficulties of fabrication of a uniform PZ layer having the desired coupling coefficient.
摘要翻译：诸如薄膜谐振器的装置在两个电极之间具有底电极，顶电极和复合层。复合层包括具有第一耦合系数的压电（PZ）层和具有第二耦合系数的耦合系数控制（CCC）层。通过在制造过程中改变PZ层和CCC层的相对厚度，可以以对谐振频率的最小影响来建立谐振器的耦合系数（在第一耦合系数和第二耦合系数之间的任何值）。此外，制造具有期望的耦合系数（作为第一耦合系数和第二耦合系数的组合）的PZ层和CCC层相对于制造具有期望的均匀PZ层的困难相对较难，耦合系数。

10. 发明授权

US07098758B2 Acoustically coupled thin-film resonators having an electrode with a tapered edge 有权
标题翻译：具有带有锥形边缘的电极的声耦合薄膜谐振器
公开(公告)号：US07098758B2
公开(公告)日：2006-08-29
申请号：US10980562
申请日：2004-11-03
申请人： Kun Wang , Paul D. Bradley , Richard C. Ruby , Hongjun Feng
发明人： Kun Wang , Paul D. Bradley , Richard C. Ruby , Hongjun Feng
IPC分类号： H03H9/54 , H03H9/13
CPC分类号： H03H9/564 , H03H9/02228 , H03H9/13 , H03H9/60 , H03H9/605 , H03H9/706
摘要： Acoustically coupled resonators include a first and a second acoustic resonator. Both the first and second acoustic resonators include a first electrode, a layer of piezoelectric material, and a second electrode. The first electrode is adjacent a first surface of the layer of piezoelectric material. The second electrode is adjacent a second surface of the layer of piezoelectric material. At least the second electrode has an edge that is tapered.
摘要翻译：声耦合谐振器包括第一和第二声谐振器。第一和第二声谐振器都包括第一电极，压电材料层和第二电极。第一电极邻近压电材料层的第一表面。第二电极邻近压电材料层的第二表面。至少第二电极具有渐缩的边缘。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式