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1. 发明申请

US20050219034A1 Semiconductor device, method of manufacturing the same, and electronic device 失效
标题翻译：半导体装置及其制造方法以及电子装置
公开(公告)号：US20050219034A1
公开(公告)日：2005-10-06
申请号：US11090005
申请日：2005-03-28
申请人： Rei Yoshikawa
发明人： Rei Yoshikawa
IPC分类号： H01L27/04 , H01C7/06 , H01L21/82 , H01L21/822 , H01L27/08 , H03K3/0231 , H03K3/354
CPC分类号： H01L27/0802 , H03K3/0231
摘要： A semiconductor device is disclosed that includes a resistive element including a first resistor having a positive temperature coefficient and a second resistor having a negative temperature coefficient. The first resistor includes a metal film.
摘要翻译：公开了一种半导体器件，其包括具有正温度系数的第一电阻器和具有负温度系数的第二电阻器的电阻元件。第一电阻器包括金属膜。

2. 发明授权

US08259196B2 Comparator, method of calibrating comparator, solid-state imaging device, and camera system 有权
标题翻译：比较器，校准比较器的方法，固态成像装置和相机系统
公开(公告)号：US08259196B2
公开(公告)日：2012-09-04
申请号：US12494865
申请日：2009-06-30
申请人： Rei Yoshikawa , Atsushi Suzuki , Keiji Yamaguchi
发明人： Rei Yoshikawa , Atsushi Suzuki , Keiji Yamaguchi
IPC分类号： H04N5/217 , H04N3/14 , H04N5/335 , H04N5/235 , H04N9/64 , H04N5/228
CPC分类号： H04N5/378 , G11C27/024 , H03K5/2481 , H03K5/249 , H03M1/1023 , H03M1/123 , H03M1/56 , H04N5/3575 , H04N17/002
摘要： A comparator includes: a signal input terminal; a capacitor connected between the signal input terminal and a signal line; and a switching transistor for calibration which is turned on/off to periodically charge the capacitor with a voltage difference between a signal voltage and an operating point of the comparator, wherein an on-resistance of the switching transistor which is turned on when performing the charging is dynamically controlled by a control pulse having a limited amplitude.
摘要翻译：比较器包括：信号输入端; 连接在信号输入端和信号线之间的电容器; 以及用于校准的开关晶体管，所述开关晶体管被导通/截止以周期性地对所述电容器充电，所述电容器具有信号电压和所述比较器的工作点之间的电压差，其中，当执行充电时所述开关晶体管的导通电阻被导通由具有有限振幅的控制脉冲动态地控制。

3. 发明授权

US07741925B2 Temperature detector circuit and oscillation frequency compensation device using the same 失效
标题翻译：温度检测电路和振荡频率补偿装置使用相同
公开(公告)号：US07741925B2
公开(公告)日：2010-06-22
申请号：US12155644
申请日：2008-06-06
申请人： Rei Yoshikawa
发明人： Rei Yoshikawa
IPC分类号： H01L35/00 , G05F3/16
CPC分类号： G01K7/01
摘要： A temperature detector circuit using a MOS transistor capable of reducing manufacture variation of a mobility and realizing stable output characteristics which are not affected by temperature dependency may be offered. In one example, the temperature detector circuit includes a pair of depression type transistors to output a voltage which is proportional to temperature from a connecting point of a source of a first transistor and a drain of a second transistor. The transistors are the same conducted type of current and are formed in different channel size, which are connected between power supplies in series, and have a configuration in which first transistor's gate and source are connected each other and a first transistor's drain is connected with a second power supply and second transistor's gate and drain are connected each other and a second transistor's source is connected with a first power supply.
摘要翻译：可以提供使用能够降低移动性的制造变化并实现不受温度依赖性影响的稳定的输出特性的MOS晶体管的温度检测器电路。在一个示例中，温度检测器电路包括一对凹陷型晶体管，以输出与第一晶体管的源极和第二晶体管的漏极的连接点成比例的电压。晶体管是相同的传导类型的电流，并且形成在不同的沟道尺寸上，其串联连接在电源之间，并且具有其中第一晶体管的栅极和源极彼此连接的结构，并且第一晶体管的漏极与第二电源和第二晶体管的栅极和漏极彼此连接，并且第二晶体管的源极与第一电源连接。

4. 发明申请

US20100002120A1 COMPARATOR, METHOD OF CALIBRATING COMPARATOR, SOLID-STATE IMAGING DEVICE, AND CAMERA SYSTEM 有权
标题翻译：比较器，校准比较器的方法，固态成像装置和相机系统
公开(公告)号：US20100002120A1
公开(公告)日：2010-01-07
申请号：US12494865
申请日：2009-06-30
申请人： Rei Yoshikawa , Atsushi Suzuki , Keiji Yamaguchi
发明人： Rei Yoshikawa , Atsushi Suzuki , Keiji Yamaguchi
IPC分类号： H03K5/00 , H04N5/335
CPC分类号： H04N5/378 , G11C27/024 , H03K5/2481 , H03K5/249 , H03M1/1023 , H03M1/123 , H03M1/56 , H04N5/3575 , H04N17/002
摘要： A comparator includes: a signal input terminal; a capacitor connected between the signal input terminal and a signal line; and a switching transistor for calibration which is turned on/off to periodically charge the capacitor with a voltage difference between a signal voltage and an operating point of the comparator, wherein an on-resistance of the switching transistor which is turned on when performing the charging is dynamically controlled by a control pulse having a limited amplitude.
摘要翻译：比较器包括：信号输入端; 连接在信号输入端和信号线之间的电容器; 以及用于校准的开关晶体管，所述开关晶体管被导通/截止以周期性地对所述电容器充电，所述电容器具有信号电压和所述比较器的工作点之间的电压差，其中，当执行充电时所述开关晶体管的导通电阻被导通由具有有限振幅的控制脉冲动态地控制。

5. 发明授权

US07602273B2 Semiconductor device, method of manufacturing the same, and electronic device 失效
标题翻译：半导体装置及其制造方法以及电子装置
公开(公告)号：US07602273B2
公开(公告)日：2009-10-13
申请号：US11090005
申请日：2005-03-28
申请人： Rei Yoshikawa
发明人： Rei Yoshikawa
IPC分类号： H01C7/10
CPC分类号： H01L27/0802 , H03K3/0231
摘要： A semiconductor device is disclosed that includes a resistive element including a first resistor having a positive temperature coefficient and a second resistor having a negative temperature coefficient. The first resistor includes a metal film.
摘要翻译：公开了一种半导体器件，其包括具有正温度系数的第一电阻器和具有负温度系数的第二电阻器的电阻元件。第一电阻器包括金属膜。

6. 发明授权

US07400208B2 Temperature detector circuit and oscillation frequency compensation device using the same 失效
标题翻译：温度检测电路和振荡频率补偿装置使用相同
公开(公告)号：US07400208B2
公开(公告)日：2008-07-15
申请号：US11487400
申请日：2006-07-17
申请人： Rei Yoshikawa
发明人： Rei Yoshikawa
IPC分类号： H01L35/00 , G05F3/16
CPC分类号： G01K7/01
摘要： A temperature detector circuit using a MOS transistor capable of reducing manufacture variation of a mobility and realizing stable output characteristics which are not affected by temperature dependency may be offered. In one example, the temperature detector circuit includes a pair of depression type transistors to output a voltage which is proportional to temperature from a connecting point of a source of a first transistor and a drain of a second transistor. The transistors are the same conducted type of current and are formed in different channel size, which are connected between power supplies in series, and have a configuration in which first transistor's gate and source are connected each other and a first transistor's drain is connected with a second power supply and second transistor's gate and drain are connected each other and a second transistor's source is connected with a first power supply.
摘要翻译：可以提供使用能够降低移动性的制造变化并实现不受温度依赖性影响的稳定的输出特性的MOS晶体管的温度检测器电路。在一个示例中，温度检测器电路包括一对凹陷型晶体管，以输出与第一晶体管的源极和第二晶体管的漏极的连接点成比例的电压。晶体管是相同的传导类型的电流，并且形成在不同的沟道尺寸上，其串联连接在电源之间，并且具有其中第一晶体管的栅极和源极彼此连接的结构，并且第一晶体管的漏极与第二电源和第二晶体管的栅极和漏极彼此连接，并且第二晶体管的源极与第一电源连接。

7. 发明申请

US20080252360A1 Temperature detector circuit and oscillation frequency compensation device using the same 失效
标题翻译：温度检测电路和振荡频率补偿装置使用相同
公开(公告)号：US20080252360A1
公开(公告)日：2008-10-16
申请号：US12155644
申请日：2008-06-06
申请人： Rei Yoshikawa
发明人： Rei Yoshikawa
IPC分类号： H01L35/00
CPC分类号： G01K7/01
摘要： A temperature detector circuit using a MOS transistor capable of reducing manufacture variation of a mobility and realizing stable output characteristics which are not affected by temperature dependency may be offered. In one example, the temperature detector circuit includes a pair of depression type transistors to output a voltage which is proportional to temperature from a connecting point of a sauce of a first transistor and a drain of a second transistor. The transistors are the same conducted type of current and are formed in different channel size, which are connected between power supplies in series, and have a configuration in which first transistor's gate and sauce are connected each other and a first transistor's drain is connected with a second power supply and second transistor's gate and drain are connected each other and a second transistor's sauce is connected with a first power supply.
摘要翻译：可以提供使用能够降低移动性的制造变化并实现不受温度依赖性影响的稳定的输出特性的MOS晶体管的温度检测器电路。在一个示例中，温度检测器电路包括一对凹陷型晶体管，以输出与第一晶体管的调味汁和第二晶体管的漏极的连接点成比例的电压。晶体管是相同的导电类型的电流，并且形成在不同的沟道尺寸中，其串联连接在电源之间，并且具有其中第一晶体管的栅极和调味汁彼此连接的配置，并且第一晶体管的漏极与第二电源和第二晶体管的栅极和漏极彼此连接，并且第二晶体管的酱汁与第一电源连接。

8. 发明申请

US20070030049A1 Temperature detector circuit and oscillation frequency compensation device using the same 失效
标题翻译：温度检测电路和振荡频率补偿装置使用相同
公开(公告)号：US20070030049A1
公开(公告)日：2007-02-08
申请号：US11487400
申请日：2006-07-17
申请人： Rei Yoshikawa
发明人： Rei Yoshikawa
IPC分类号： H01L35/00
CPC分类号： G01K7/01
摘要： A temperature detector circuit using a MOS transistor capable of reducing manufacture variation of a mobility and realizing stable output characteristics which are not affected by temperature dependency may be offered. In one example, the temperature detector circuit includes a pair of depression type transistors to output a voltage which is proportional to temperature from a connecting point of a source of a first transistor and a drain of a second transistor. The transistors are the same conducted type of current and are formed in different channel size, which are connected between power supplies in series, and have a configuration in which first transistor's gate and source are connected each other and a first transistor's drain is connected with a second power supply and second transistor's gate and drain are connected each other and a second transistor's source is connected with a first power supply.
摘要翻译：可以提供使用能够降低移动性的制造变化并实现不受温度依赖性影响的稳定的输出特性的MOS晶体管的温度检测器电路。在一个示例中，温度检测器电路包括一对凹陷型晶体管，以输出与第一晶体管的源极和第二晶体管的漏极的连接点成比例的电压。晶体管是相同的传导类型的电流，并且形成在不同的沟道尺寸上，其串联连接在电源之间，并且具有其中第一晶体管的栅极和源极彼此连接的结构，并且第一晶体管的漏极与第二电源和第二晶体管的栅极和漏极彼此连接，并且第二晶体管的源极与第一电源连接。

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