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1. 发明申请

US20070194301A1 Semiconductor arrangement with non-volatile memories 审中-公开
标题翻译：具有非易失性存储器的半导体装置
公开(公告)号：US20070194301A1
公开(公告)日：2007-08-23
申请号：US10580881
申请日：2004-11-24
申请人： Recai Sezi , Andreas Walter , Reimund Engl , Anna Maltenberger , Christine Dehm , Sitaram Arkalgud , Igor Kasko , Joachim Nuetzel , Jakob Kriz , Thomas Mikolajick , Cay-Uwe Pinnow
发明人： Recai Sezi , Andreas Walter , Reimund Engl , Anna Maltenberger , Christine Dehm , Sitaram Arkalgud , Igor Kasko , Joachim Nuetzel , Jakob Kriz , Thomas Mikolajick , Cay-Uwe Pinnow
IPC分类号： H01L51/00 , H01L21/8232
CPC分类号： H01L51/0036 , B82Y10/00 , G11C13/0014 , G11C13/0016 , H01L27/28 , H01L51/0051 , H01L51/0062 , H01L51/0595
摘要： One aspect of the invention relates to a semiconductor arrangement having at least one nonvolatile memory cell which has a first electrode comprising at least two layers; and having an organic material, the organic material forming a compound with that layer of the first electrode which is in direct contact. One aspect of the invention furthermore relates to a method for producing the nonvolatile memory cell, a semiconductor arrangement having a plurality of memory cells according to the invention, and a method for producing the same.
摘要翻译：本发明的一个方面涉及具有至少一个非易失性存储单元的半导体装置，其具有包括至少两层的第一电极; 并且具有有机材料，所述有机材料与所述第一电极的所述层直接接触形成化合物。本发明的一个方面还涉及一种用于制造非易失性存储单元的方法，具有根据本发明的多个存储单元的半导体装置及其制造方法。

2. 发明申请

US20070166924A1 Memory cell and method for fabricating a memory device 审中-公开
标题翻译：用于制造存储器件的存储单元和方法
公开(公告)号：US20070166924A1
公开(公告)日：2007-07-19
申请号：US10565578
申请日：2004-07-21
申请人： Michael Kund , Thomas Mikolajick , Cay-Uwe Pinnow
发明人： Michael Kund , Thomas Mikolajick , Cay-Uwe Pinnow
IPC分类号： H01L21/336
CPC分类号： H01L27/11568 , B82Y10/00 , G11C13/0014 , H01L27/115 , H01L29/40117 , H01L29/66833 , H01L29/792
摘要： When fabricating a memory cell with an organic storage layer which stores a digital information item, processing of polycrystalline and monocrystalline semiconductor structures in which high temperatures are employed is concluded prior to application of the organic storage layer.
摘要翻译：当制造具有存储数字信息项的有机存储层的存储单元时，在施加有机存储层之前就结束使用其中使用高温的多晶和单晶半导体结构的处理。

3. 发明授权

US07658773B2 Method for fabricating a solid electrolyte memory device and solid electrolyte memory device 失效
标题翻译：固体电解质存储器件和固体电解质存储器件的制造方法
公开(公告)号：US07658773B2
公开(公告)日：2010-02-09
申请号：US11541391
申请日：2006-09-29
申请人： Cay-Uwe Pinnow
发明人： Cay-Uwe Pinnow
IPC分类号： H01G9/00 , H01L21/20
CPC分类号： H01L45/1246 , H01L27/2472 , H01L45/085 , H01L45/1233 , H01L45/165 , Y10T29/417
摘要： A method for fabricating a solid electrolyte memory device comprises a plurality of solid electrolyte memory cells, the solid electrolyte memory cells sharing a common continuous solid electrolyte layer comprising solid electrolyte cell areas and solid electrolyte inter-cell areas, the method comprising the process of introducing mobile ion solubility reducing material or mobile ion mobility reducing material into the solid electrolyte inter-cell areas.
摘要翻译：一种制造固体电解质存储器件的方法，包括多个固体电解质存储单元，所述固体电解质存储单元共享包含固体电解质电池区域和固体电解质电池间区域的常见连续固体电解质层，所述方法包括引入移动离子溶解度降低材料或移动离子迁移率降低材料进入固体电解质细胞间区域。

4. 发明授权

US07119395B2 Memory cell with nanocrystals or nanodots 有权
标题翻译：具有纳米晶体或纳米点的记忆体
公开(公告)号：US07119395B2
公开(公告)日：2006-10-10
申请号：US10916013
申请日：2004-08-11
申请人： Martin Gutsche , Josef Willer , Cay-Uwe Pinnow , Ralf Symanczyk
发明人： Martin Gutsche , Josef Willer , Cay-Uwe Pinnow , Ralf Symanczyk
IPC分类号： H01L29/788
CPC分类号： H01L27/11521 , H01L21/28273 , H01L27/115 , H01L29/42332
摘要： The storage layer (6) is in each case present above a region in which the channel region (3) adjoins a source/drain region (2) and is in each case interrupted above an intervening middle part of the channel region (3). The storage layer (6) is formed by material of the gate dielectric (4) and contains silicon or germanium nanocrystals or nanodots introduced through ion implantation. The gate electrode (5) is widened at the flanks by electrically conductive spacers (7).
摘要翻译：存储层（6）在每种情况下都存在于沟道区域（3）邻接源极/漏极区域（2）的区域上方，并且在每个情况下都被中断在沟道区域（3）的中间部分之上。存储层（6）由栅极电介质（4）的材料形成，并且包含通过离子注入引入的硅或锗纳米晶体或纳米点。栅电极（5）通过导电间隔物（7）在侧面加宽。

5. 发明申请

US20060205110A1 Method for manufacturing an electrolyte material layer in semiconductor memory devices 失效
标题翻译：在半导体存储器件中制造电解质材料层的方法
公开(公告)号：US20060205110A1
公开(公告)日：2006-09-14
申请号：US11076027
申请日：2005-03-10
申请人： Cay-Uwe Pinnow , Klaus-Dieter Ufert
发明人： Cay-Uwe Pinnow , Klaus-Dieter Ufert
IPC分类号： H01L21/06 , H01L21/20 , H01L21/8238 , H01L21/00
CPC分类号： H01L45/085 , H01L45/141 , H01L45/142 , H01L45/143 , H01L45/146 , H01L45/1616 , H01L45/1625 , H01L45/1641
摘要： A method for manufacturing an electrolyte material layer with a chalcogenide material incorporated or deposited therein for use in semiconductor memory devices, in particular resistively-switching memory devices or components. The method comprises the steps of producing a semiconductor substrate, depositing a binary chalcogenide layer onto the semiconductor substrate, depositing a sulphur-containing layer onto the binary chalcogenide layer, and creating a ternary chalcogenide layer comprising at least two different chalcogenide compounds ASexSy. One component A of the chalcogenide compounds ASexSy comprises materials of the IV elements main group, e.g., Ge, Si, or of a transition metal, preferably of the group consisting of Zn, Cd, Hg, or a combination thereof.
摘要翻译：一种用于制造电解质材料层的方法，所述电解质材料层具有结合或沉积在其中用于半导体存储器件，特别是电阻切换存储器件或部件的硫族化物材料。该方法包括以下步骤：制造半导体衬底，在半导体衬底上沉积二元硫族化物层，在二元硫族化物层上沉积含硫层，以及产生包含至少两种不同硫属化物化合物的三元硫族化物层， x 。硫属化物化合物的一个组分A包括IV元素主要组分的材料，例如Ge，Si或过渡金属，优选基团由Zn，Cd，Hg或其组合组成。

6. 发明申请

US20060091476A1 Sub-lithographic structures, devices including such structures, and methods for producing the same 有权
标题翻译：亚光刻结构，包括这种结构的装置及其制造方法
公开(公告)号：US20060091476A1
公开(公告)日：2006-05-04
申请号：US11258367
申请日：2005-10-26
申请人： Cay-Uwe Pinnow , Thomas Happ , Michael Kund , Gerhard Mueller
发明人： Cay-Uwe Pinnow , Thomas Happ , Michael Kund , Gerhard Mueller
IPC分类号： H01L29/76 , H01L23/48 , H01L23/52 , H01L29/00
CPC分类号： H01L21/0338 , H01L21/0332 , H01L21/31144 , H01L21/76804 , H01L27/2436 , H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/144 , H01L45/16 , H01L2924/0002 , H01L2924/00
摘要： A method which makes it possible to define in a patterning layer openings having a first dimension that is substantially less than the feature size that can be obtained lithographically includes applying a sacrificial layer made of a material that is different from that of the patterning layer in a predetermined layer thickness on the patterning layer. Afterward, a photoresist layer is applied on the surface of the sacrificial layer, and an opening having a second dimension is defined lithographically in the photoresist layer. Afterward, an etching angle is set in a manner dependent on the layer thickness of the sacrificial layer and also the first and second dimensions, and the sacrificial layer is etched at the etching angle set. Afterward, the patterning layer is etched, the sacrificial layer is removed and a filling material is introduced into the opening produced in the patterning layer.
摘要翻译：可以在图案化层中限定具有基本上小于可以光刻获得的特征尺寸的第一尺寸的开口的方法，包括将由不同于图案形成层的材料制成的牺牲层图案化层上的预定层厚度。之后，在牺牲层的表面上施加光致抗蚀剂层，并且在光致抗蚀剂层中光刻地限定具有第二尺寸的开口。之后，以取决于牺牲层的层厚度以及第一和第二尺寸的方式设置蚀刻角度，并且以蚀刻角度设置蚀刻牺牲层。之后，蚀刻图形层，去除牺牲层，并将填充材料引入图案化层中产生的开口中。

7. 发明申请

US20110037014A1 METHOD FOR PRODUCING MEMORY HAVING A SOLID ELECTROLYTE MATERIAL REGION 有权
标题翻译：用于生产具有固体电解质材料区的存储器的方法
公开(公告)号：US20110037014A1
公开(公告)日：2011-02-17
申请号：US12913565
申请日：2010-10-27
申请人： Cay-Uwe Pinnow , Klaus-Dieter Ufert
发明人： Cay-Uwe Pinnow , Klaus-Dieter Ufert
IPC分类号： H01B1/00
CPC分类号： G11C13/0011 , H01L45/085 , H01L45/1233 , H01L45/142 , H01L45/143 , H01L45/1608
摘要： A method for producing a solid electrolyte material region for a memory element of a solid electrolyte memory cell. A first material is formed in substantially pure form. A thermal treatment is carried out in the presence of at least one second material, and the chalcogenide material of the solid electrolyte material region thereby being produced.
摘要翻译：一种固体电解质存储单元的存储元件固体电解质材料区域的制造方法。第一材料以基本上纯的形式形成。在至少一种第二材料的存在下进行热处理，由此生产固体电解质材料区域的硫族化物材料。

8. 发明授权

US07613028B2 Solid electrolyte switching element 有权
标题翻译：固体电解质开关元件
公开(公告)号：US07613028B2
公开(公告)日：2009-11-03
申请号：US11131498
申请日：2005-05-18
申请人： Cay-Uwe Pinnow , Klaus-Dieter Ufert
发明人： Cay-Uwe Pinnow , Klaus-Dieter Ufert
IPC分类号： G11C11/00
CPC分类号： G11C13/0011 , G11C2213/15 , G11C2213/34 , H01L45/085 , H01L45/1233 , H01L45/1266 , H01L45/142 , H01L45/143 , H01L45/145 , H01L45/146
摘要： A switching element for reversible switching between an electrically insulating OFF state and an electrically conductive ON state, having two electrodes, namely a reactive electrode and an inert electrode, and also a solid electrolyte arranged between the two electrodes, which is characterized by the fact that the electrical conductivity of the solid electrolyte increases as the temperature thereof rises, but essentially no longer increases below a critical decomposition temperature of the solid electrolyte.
摘要翻译：一种用于在电绝缘OFF状态和导电ON状态之间可逆切换的开关元件，具有两个电极，即反应电极和惰性电极，以及布置在两个电极之间的固体电解质，其特征在于，固体电解质的电导率随温度升高而增加，但基本上不再增加到低于固体电解质的临界分解温度。

9. 发明申请

US20070195611A1 Programmable structure, a memory, a display and a method for reading data from a memory cell 审中-公开
标题翻译：可编程结构，存储器，显示器和用于从存储器单元读取数据的方法
公开(公告)号：US20070195611A1
公开(公告)日：2007-08-23
申请号：US11360149
申请日：2006-02-23
申请人： Ralf Symanczyk , Cay-Uwe Pinnow
发明人： Ralf Symanczyk , Cay-Uwe Pinnow
IPC分类号： G11C7/10
CPC分类号： G11C13/04 , G09G3/3433 , G11C13/0011 , G11C13/004 , G11C13/0069 , G11C2013/009 , G11C2213/79
摘要： The invention refers to an improved programmable structure, an improved memory, an improved display and an improved method for reading data from a memory cell. More particularly, embodiments of the invention provide a programmable structure and a memory, whereby a programmed state of the programmable structure and a programmed state of a memory cell of the memory can be read out with a simple method. According a further aspect of the present invention, the stored data of the programmable structure and the stored data of the memory device can be read out according an improved method. In accordance with one exemplary embodiment of the present invention, a programmable structure comprises an ion conductor layer, a modifying device coupled to the ion conductor layer, the modifying device being operable to change an electromagnetic property of the ion conductor layer, an emitting device for sending an electromagnetic radiation to the ion conductor layer and a receiving device for receiving an electromagnetic radiation from the ion conductor layer. The ion conductor layer is configured that when a bias is applied across the ion conductor layer an electromagnetic property of the ion conductor layer is changed. Therefore it is possible to program different states referring to different electromagnetic properties of the ion conductor layers. The different states of the ion conductor layer can be read by sending an electromagnetic radiation to the ion conductor layer and receiving the electromagnetic radiation from the ion conductor layer.
摘要翻译：本发明涉及改进的可编程结构，改进的存储器，改进的显示器和用于从存储器单元读取数据的改进方法。更具体地，本发明的实施例提供可编程结构和存储器，由此可以用简单的方法读出可编程结构的编程状态和存储器的存储单元的编程状态。根据本发明的另一方面，可以根据改进的方法读出可编程结构的存储数据和存储器件的存储数据。根据本发明的一个示例性实施例，可编程结构包括离子导体层，耦合到离子导体层的修改设备，修改设备可操作以改变离子导体层的电磁特性，用于向离子导体层发送电磁辐射和从离子导体层接收电磁辐射的接收装置。离子导体层被配置为当跨越离子导体层施加偏压时，离子导体层的电磁特性改变。因此，可以根据离子导体层的不同电磁特性编程不同的状态。可以通过向离子导体层发送电磁辐射并接收来自离子导体层的电磁辐射来读取离子导体层的不同状态。

10. 发明授权

US07214587B2 Method for fabricating a semiconductor memory cell 失效
标题翻译：半导体存储单元的制造方法
公开(公告)号：US07214587B2
公开(公告)日：2007-05-08
申请号：US11074946
申请日：2005-03-09
申请人： Cay-Uwe Pinnow , Ralf Symanczyk
发明人： Cay-Uwe Pinnow , Ralf Symanczyk
IPC分类号： H01L21/336
CPC分类号： H01L45/142 , H01L27/2436 , H01L45/085 , H01L45/1233 , H01L45/1266 , H01L45/143
摘要： Semiconductor memory cell and also a corresponding fabrication method are described, in which a first or bottom electrode device of the memory element of the semiconductor memory cell according to the invention and the gate electrode device of the underlying field effect transistor as selection transistor of the semiconductor memory cell are formed as the same material region or with a common material region.
摘要翻译：描述了半导体存储单元以及相应的制造方法，其中根据本发明的半导体存储单元的存储元件的第一或下部电极器件和作为半导体的选择晶体管的底层场效应晶体管的栅极电极器件存储单元形成为相同的材料区域或与公共材料区域形成。

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