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1. 发明申请

US20110189821A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20110189821A1
公开(公告)日：2011-08-04
申请号：US12899622
申请日：2010-10-07
申请人： Ralf Otremba , Joachim Mahler , Bernd Rakow , Reimund Engl , Rupert Fischer
发明人： Ralf Otremba , Joachim Mahler , Bernd Rakow , Reimund Engl , Rupert Fischer
IPC分类号： H01L21/50
CPC分类号： H01L24/83 , H01L23/49513 , H01L23/49575 , H01L23/49586 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/48 , H01L24/85 , H01L2224/03505 , H01L2224/04026 , H01L2224/29111 , H01L2224/2919 , H01L2224/2929 , H01L2224/29339 , H01L2224/29344 , H01L2224/29347 , H01L2224/29355 , H01L2224/48091 , H01L2224/48137 , H01L2224/48247 , H01L2224/48463 , H01L2224/83192 , H01L2224/8381 , H01L2224/83825 , H01L2224/8385 , H01L2224/85 , H01L2224/85205 , H01L2224/92 , H01L2224/92247 , H01L2924/00011 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01024 , H01L2924/01027 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/0104 , H01L2924/01047 , H01L2924/01068 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01327 , H01L2924/014 , H01L2924/0665 , H01L2924/07802 , H01L2924/09701 , H01L2924/12032 , H01L2924/12044 , H01L2924/14 , H01L2924/15738 , H01L2924/15747 , H01L2924/1576 , H01L2924/181 , H01L2924/00 , H01L2924/0105 , H01L2924/01049 , H01L2924/01028 , H01L2224/83205 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A semiconductor device and method is disclosed. One embodiment provides a method comprising placing a first semiconductor chip on a carrier. After placing the first semiconductor chip on the carrier, an electrically insulating layer is deposited on the carrier. A second semiconductor chip is placed on the electrically insulating layer.
摘要翻译：公开了半导体器件和方法。一个实施例提供了一种方法，包括将第一半导体芯片放置在载体上。在将第一半导体芯片放置在载体上之后，在载体上沉积电绝缘层。第二半导体芯片放置在电绝缘层上。

2. 发明申请

US20080173992A1 SEMICONDUCTOR DEVICE INCLUDING ISOLATION LAYER 有权
标题翻译：包含隔离层的半导体器件
公开(公告)号：US20080173992A1
公开(公告)日：2008-07-24
申请号：US11778427
申请日：2007-07-16
申请人： Joachim Mahler , Wae Chet Yong , Stanley Job Doraisamy , Gerhard Deml , Rupert Fischer , Reimund Engl
发明人： Joachim Mahler , Wae Chet Yong , Stanley Job Doraisamy , Gerhard Deml , Rupert Fischer , Reimund Engl
IPC分类号： H01L21/00 , H01L23/02 , H01L23/495
CPC分类号： H01L23/49562 , H01L21/6836 , H01L23/49513 , H01L23/49575 , H01L24/27 , H01L24/32 , H01L24/48 , H01L24/49 , H01L24/83 , H01L2224/04026 , H01L2224/05554 , H01L2224/274 , H01L2224/2919 , H01L2224/32245 , H01L2224/48091 , H01L2224/48137 , H01L2224/48247 , H01L2224/49 , H01L2224/73265 , H01L2224/838 , H01L2924/00014 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/01022 , H01L2924/01023 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01073 , H01L2924/01082 , H01L2924/014 , H01L2924/0665 , H01L2924/078 , H01L2924/07802 , H01L2924/10253 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/00 , H01L2224/45099 , H01L2224/05599
摘要： A semiconductor device includes a carrier, a semiconductor chip including an active area on a first face and a separate isolation layer applied to a second face, and an adhesion material coupling the isolation layer to the carrier with the second face facing the carrier.
摘要翻译：半导体器件包括载体，半导体芯片，其包括在第一面上的有源区域和施加到第二面上的单独的隔离层，以及将隔离层耦合到载体的粘合材料，第二面朝向载体。

3. 发明授权

US08110906B2 Semiconductor device including isolation layer 有权
标题翻译：半导体器件包括隔离层
公开(公告)号：US08110906B2
公开(公告)日：2012-02-07
申请号：US11778427
申请日：2007-07-16
申请人： Joachim Mahler , Wae Chet Yong , Stanley Job Doraisamy , Gerhard Deml , Rupert Fischer , Reimund Engl
发明人： Joachim Mahler , Wae Chet Yong , Stanley Job Doraisamy , Gerhard Deml , Rupert Fischer , Reimund Engl
IPC分类号： H01L21/00 , H01L23/02 , H01L23/495
CPC分类号： H01L23/49562 , H01L21/6836 , H01L23/49513 , H01L23/49575 , H01L24/27 , H01L24/32 , H01L24/48 , H01L24/49 , H01L24/83 , H01L2224/04026 , H01L2224/05554 , H01L2224/274 , H01L2224/2919 , H01L2224/32245 , H01L2224/48091 , H01L2224/48137 , H01L2224/48247 , H01L2224/49 , H01L2224/73265 , H01L2224/838 , H01L2924/00014 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/01022 , H01L2924/01023 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01073 , H01L2924/01082 , H01L2924/014 , H01L2924/0665 , H01L2924/078 , H01L2924/07802 , H01L2924/10253 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/00 , H01L2224/45099 , H01L2224/05599
摘要： A semiconductor device includes a carrier, a semiconductor chip including an active area on a first face and a separate isolation layer applied to a second face, and an adhesion material coupling the isolation layer to the carrier with the second face facing the carrier.
摘要翻译：半导体器件包括载体，半导体芯片，其包括在第一面上的有源区域和施加到第二面上的单独的隔离层，以及将隔离层耦合到载体的粘合材料，第二面朝向载体。

4. 发明授权

US07868465B2 Semiconductor device with a metallic carrier and two semiconductor chips applied to the carrier 有权
标题翻译：具有金属载体的半导体器件和应用于载体的两个半导体芯片
公开(公告)号：US07868465B2
公开(公告)日：2011-01-11
申请号：US11757649
申请日：2007-06-04
申请人： Ralf Otremba , Joachim Mahler , Bernd Rakow , Reimund Engl , Rupert Fischer
发明人： Ralf Otremba , Joachim Mahler , Bernd Rakow , Reimund Engl , Rupert Fischer
IPC分类号： H01L23/48 , H01L21/58
CPC分类号： H01L24/83 , H01L23/49513 , H01L23/49575 , H01L23/49586 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/48 , H01L24/85 , H01L2224/03505 , H01L2224/04026 , H01L2224/29111 , H01L2224/2919 , H01L2224/2929 , H01L2224/29339 , H01L2224/29344 , H01L2224/29347 , H01L2224/29355 , H01L2224/48091 , H01L2224/48137 , H01L2224/48247 , H01L2224/48463 , H01L2224/83192 , H01L2224/8381 , H01L2224/83825 , H01L2224/8385 , H01L2224/85 , H01L2224/85205 , H01L2224/92 , H01L2224/92247 , H01L2924/00011 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01024 , H01L2924/01027 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/0104 , H01L2924/01047 , H01L2924/01068 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01327 , H01L2924/014 , H01L2924/0665 , H01L2924/07802 , H01L2924/09701 , H01L2924/12032 , H01L2924/12044 , H01L2924/14 , H01L2924/15738 , H01L2924/15747 , H01L2924/1576 , H01L2924/181 , H01L2924/00 , H01L2924/0105 , H01L2924/01049 , H01L2924/01028 , H01L2224/83205 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A semiconductor device is disclosed. One embodiment provides a device including a carrier, an electrically insulating layer applied onto the carrier, an adhesive layer applied to the electrically insulating layer. A first semiconductor chip applied to the adhesive layer.
摘要翻译：公开了一种半导体器件。一个实施例提供一种包括载体，施加到载体上的电绝缘层，施加到电绝缘层的粘合剂层的装置。施加到粘合剂层的第一半导体芯片。

5. 发明授权

US07705441B2 Semiconductor module 有权
标题翻译：半导体模块
公开(公告)号：US07705441B2
公开(公告)日：2010-04-27
申请号：US11682353
申请日：2007-03-06
申请人： Joachim Mahler , Reimund Engl , Thomas Behrens
发明人： Joachim Mahler , Reimund Engl , Thomas Behrens
IPC分类号： H01L23/31 , H01L23/02 , H01L21/00
CPC分类号： H01L23/49575 , H01L24/29 , H01L24/32 , H01L24/48 , H01L24/49 , H01L24/83 , H01L25/0657 , H01L25/50 , H01L29/0657 , H01L2224/26145 , H01L2224/27013 , H01L2224/2919 , H01L2224/32057 , H01L2224/48091 , H01L2224/48145 , H01L2224/48247 , H01L2224/48257 , H01L2224/4911 , H01L2224/73265 , H01L2224/83051 , H01L2224/83191 , H01L2224/83192 , H01L2224/83365 , H01L2224/83385 , H01L2224/8385 , H01L2224/92247 , H01L2225/06555 , H01L2225/06575 , H01L2924/00014 , H01L2924/01006 , H01L2924/01014 , H01L2924/01023 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/0665 , H01L2924/07802 , H01L2924/12044 , H01L2924/1301 , H01L2924/13033 , H01L2924/13055 , H01L2924/13091 , H01L2924/14 , H01L2924/181 , H01L2924/19107 , H01L2924/00 , H01L2924/10155 , H01L2224/45099 , H01L2224/05599 , H01L2924/00012
摘要： A semiconductor module is disclosed. One embodiment provides a first semiconductor chip, a second semiconductor chip and a spacer. The first semiconductor chip has a depression at a first main surface. The spacer applied to the first main surface and at least partly fills the depression. The second semiconductor chip is applied to the spacer.
摘要翻译：公开了一种半导体模块。一个实施例提供第一半导体芯片，第二半导体芯片和间隔物。第一半导体芯片在第一主表面具有凹陷。间隔件施加到第一主表面并且至少部分地填充凹陷。将第二半导体芯片应用于间隔件。

6. 发明申请

US20090093090A1 METHOD FOR PRODUCING A POWER SEMICONDUCTOR MODULE COMPRISING SURFACE-MOUNTABLE FLAT EXTERNAL CONTACTS 有权
标题翻译：用于生产包含表面平面外部接触的功率半导体模块的方法
公开(公告)号：US20090093090A1
公开(公告)日：2009-04-09
申请号：US11867329
申请日：2007-10-04
申请人： Henrik Ewe , Stefan Landau , Klaus Schiess , Robert Bergmann , Alvin Wee Beng Tatt , Soon Lock Goh , Joachim Mahler , Boris Plikat , Reimund Engl
发明人： Henrik Ewe , Stefan Landau , Klaus Schiess , Robert Bergmann , Alvin Wee Beng Tatt , Soon Lock Goh , Joachim Mahler , Boris Plikat , Reimund Engl
IPC分类号： H01L21/56
CPC分类号： H01L23/3107 , H01L23/49524 , H01L23/49548 , H01L23/49562 , H01L23/49575 , H01L24/24 , H01L24/80 , H01L24/82 , H01L2224/24051 , H01L2224/24226 , H01L2224/24246 , H01L2224/24998 , H01L2224/32245 , H01L2224/76155 , H01L2224/82007 , H01L2224/82039 , H01L2224/82102 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01016 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/13091 , H01L2924/14 , H01L2924/15787 , H01L2924/181 , H01L2924/30107 , H01L2924/351 , H01L2924/00
摘要： A method for producing a power semiconductor module having surface mountable flat external contact areas is disclosed. At least one power semiconductor chip is fixed by its rear side on a drain external contact. An insulation layer covers the top side over the side edges of the semiconductor chip as far as the inner housing plane was a leaving free the source and gate contact areas on the top side of the semiconductor chip and also was partly leaving free the top sides of the corresponding external contacts.
摘要翻译：公开了一种具有表面安装平坦的外部接触区域的功率半导体模块的制造方法。至少一个功率半导体芯片由其后侧固定在漏极外部触点上。绝缘层覆盖半导体芯片的侧边缘上方的顶侧，只要内壳平面离开半导体芯片的顶侧上的源极和栅极接触区域，并且还部分地释放出半导体芯片的顶侧相应的外部联系人。

7. 发明申请

US20080296782A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20080296782A1
公开(公告)日：2008-12-04
申请号：US11757649
申请日：2007-06-04
申请人： Ralf Otremba , Joachim Mahler , Bernd Rakow , Reimund Engl , Rupert Fischer
发明人： Ralf Otremba , Joachim Mahler , Bernd Rakow , Reimund Engl , Rupert Fischer
IPC分类号： H01L23/48 , H01L21/58
CPC分类号： H01L24/83 , H01L23/49513 , H01L23/49575 , H01L23/49586 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/48 , H01L24/85 , H01L2224/03505 , H01L2224/04026 , H01L2224/29111 , H01L2224/2919 , H01L2224/2929 , H01L2224/29339 , H01L2224/29344 , H01L2224/29347 , H01L2224/29355 , H01L2224/48091 , H01L2224/48137 , H01L2224/48247 , H01L2224/48463 , H01L2224/83192 , H01L2224/8381 , H01L2224/83825 , H01L2224/8385 , H01L2224/85 , H01L2224/85205 , H01L2224/92 , H01L2224/92247 , H01L2924/00011 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01024 , H01L2924/01027 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/0104 , H01L2924/01047 , H01L2924/01068 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01327 , H01L2924/014 , H01L2924/0665 , H01L2924/07802 , H01L2924/09701 , H01L2924/12032 , H01L2924/12044 , H01L2924/14 , H01L2924/15738 , H01L2924/15747 , H01L2924/1576 , H01L2924/181 , H01L2924/00 , H01L2924/0105 , H01L2924/01049 , H01L2924/01028 , H01L2224/83205 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A semiconductor device is disclosed. One embodiment provides a device including a carrier, an electrically insulating layer applied onto the carrier, an adhesive layer applied to the electrically insulating layer. A first semiconductor chip applied to the adhesive layer.
摘要翻译：公开了一种半导体器件。一个实施例提供一种包括载体，施加到载体上的电绝缘层，施加到电绝缘层的粘合剂层的装置。施加到粘合剂层的第一半导体芯片。

8. 发明申请

US20080191197A1 Semiconductor Arrangement Having a Resistive Memory 审中-公开
公开(公告)号：US20080191197A1
公开(公告)日：2008-08-14
申请号：US11572951
申请日：2005-07-21
申请人： Andreas Walter , Recai Sezi , Reimund Engl , Anna Maltenberger , Joerg Schumann , Thomas Weitz
发明人： Andreas Walter , Recai Sezi , Reimund Engl , Anna Maltenberger , Joerg Schumann , Thomas Weitz
IPC分类号： H01L51/30 , H01L51/40
CPC分类号： H01L51/0052 , B82Y10/00 , G11C13/0014 , H01B1/121 , H01L27/11502 , H01L27/285 , H01L51/0036 , H01L51/0051
摘要： A memory cell reversibly switchable between different stable electrical resistance states, the memory cell having a first electrode and a second electrode and an active layer arranged between the first and the second electrode, the active layer including a compound represented by general formula , wherein R1 and R2 are independently selected from —H, —(CH2)mCH3, -phenyl, —O—(CH2)mCH3, —O-phenyl, —S(CH2)mCH3, —S-aryl, —NR3R4, —SR3 and -halogen; R1 and R2 may together form a ring; R5 and R6 are independently selected from —H, -alkyl, -aryl and -heteroaryl; m is either 0 or an integer ranging from 1 to 10; n is an integer ranging from 2 to 1000; and a compound represented by general formula wherein R7, R8, R9, R10, R11, R12, R13, and R14 are independently selected from the group consisting of —H, —(CH2)mCH3, -phenyl, —O—(CH2)mCH3, —O-phenyl, —CO(CH2)mCH3, -halogen, —CN and —NO2; R7 and R8 may together form a ring; R8 and R9 may together form a ring; R9 and R10 may together form a ring; R11 and R12 may together form a ring; R12 and R13 may together form a ring; and R13 and R14 may together form a ring.Furthermore, a process for the production of the cells according to the invention is provided, as well as the novel use of a composition which can be used as active material for the memory cells.

9. 发明授权

US07238964B2 Memory cell, method for the production thereof and use of a composition therefor 有权
标题翻译：记忆单元，其制造方法和其组合物的使用
公开(公告)号：US07238964B2
公开(公告)日：2007-07-03
申请号：US11044762
申请日：2005-01-27
申请人： Andreas Walter , Recai Sezi , Reimund Engl , Anna Maltenberger , Joerg Schumann , Thomas Weitz
发明人： Andreas Walter , Recai Sezi , Reimund Engl , Anna Maltenberger , Joerg Schumann , Thomas Weitz
IPC分类号： H01L29/04 , H01L31/20 , H01L33/00
CPC分类号： H01L51/0595 , B82Y10/00 , G11C13/0014 , G11C13/0016 , H01L27/285 , H01L51/0051
摘要： A memory cell is provided which comprises two electrodes and a layer arranged in between and comprising an active material comprising (a) a compound selected from the group consisting of in which R1 and R4, independently of one another, may have the following meaning: —H, -alkyl, -aryl, -heteroaryl, —O-alkyl, —O-aryl, —O-heteroaryl, —SH, —S-alkyl, —S-aryl, —S-heteroaryl, —CO-alkyl, —CO-aryl, —CO-heteroaryl, —CS-alkyl, —CS-aryl, —CS-heteroaryl, -halogen, —CN and/or —NO2, in which R1 and R2, R2 and R3, R3 and R4 together may form a ring, (b) a compound of the general formula II: in which R5 to R7, independently of one another, may have the following meaning: —H, -alkyl, -aryl, -heteroaryl, —O-alkyl, —O-aryl, —O-heteroaryl, —NH2, —N(alkyl)2, —N(aryl)2, —N(heteroaryl)2, —SH, —S-alkyl, —S-aryl, —S-heteroaryl, —CO-alkyl, —CO-aryl, —CO-heteroaryl, —CS-alkyl, —CS-aryl, —CS-heteroaryl, -halogen, —CN and/or —NO2, in which R5 and R6 or R7 and R8 together may form a ring, and optionally (c) a polymer. A method for the production of the cells according to the invention and the novel use of a composition which can be used as active material for the memory cells are furthermore provided.
摘要翻译：提供了一种存储单元，其包括两个电极和布置在其间并包含活性材料的层，所述活性材料包含（a）选自下组的化合物：其中R 1和R 2，可以具有以下含义：-H， - 烷基， - 芳基， - 杂芳基，-O-烷基，-O-芳基， - O-杂芳基，-SH - ， - S-烷基， -S-芳基，-S-杂芳基，-CO-烷基，-CO-芳基，-CO-杂芳基，-CS-烷基，-CS-芳基，-CS-杂芳基， - 卤素，-CN和/或-NO 其中R 1和R 2，R 2和R 3， R 3和R 4一起可以形成环，（b）通式II的化合物：其中R 5至R 可以具有如下含义：-H， - 烷基， - 芳基， - 杂芳基， - - - 烷基，-O-芳基， - O-杂芳基， N（烷基）2，-N（芳基）2 N，-N（杂芳基）2， -SH，-S-烷基，-S-芳基，-S-杂芳基，-CO-烷基，-CO-芳基，-CO-杂芳基，-CS-烷基，-CS-芳基，-CS-杂芳基， - 卤素，-CN和/或-NO 2，其中R 5 和R 6或R 7和R 8一起可以形成环，和任选地（c）聚合物。此外还提供了用于生产根据本发明的电池的方法和可用作存储器电池的活性材料的组合物的新用途。

10. 发明申请

US20050213413A1 Pentaarylcyclopentadienyl units as active units in resistive memory elements 失效
标题翻译：五芳基环戊二烯基单元作为电阻记忆元件中的活性单元
公开(公告)号：US20050213413A1
公开(公告)日：2005-09-29
申请号：US11092968
申请日：2005-03-30
申请人： Gunter Schmid , Hagen Klauk , Marcus Halik , Reimund Engl , Andreas Walter
发明人： Gunter Schmid , Hagen Klauk , Marcus Halik , Reimund Engl , Andreas Walter
IPC分类号： G11C5/00
CPC分类号： G11C13/0014 , B82Y10/00 , C08G61/02 , G11C13/0016 , G11C2213/72 , H01L51/0035 , H01L51/004 , H01L51/005 , H01L51/0591
摘要： Polymers are described which exhibit a resistive hysteresis effect. The polymers include a polymer backbone to which pentaarylcyclopentadienyl radicals are bonded as side groups. A resistive memory element is formed that includes the polymer as a storage medium. By applying a voltage, the memory element can be switched between a nonconductive and a conductive state.
摘要翻译：描述了表现出电阻滞后效应的聚合物。聚合物包括作为侧基键合五芳基环戊二烯基的聚合物主链。形成包含作为存储介质的聚合物的电阻式存储元件。通过施加电压，可以在非导通状态和导通状态之间切换存储元件。

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