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1. 发明授权

US06423631B1 Isolation using an antireflective coating 有权
标题翻译：使用抗反射涂层进行隔离
公开(公告)号：US06423631B1
公开(公告)日：2002-07-23
申请号：US09625164
申请日：2000-07-25
申请人： Ravi Iyer , Steven M. McDonald , Thomas R. Glass , Zhiping Yin
发明人： Ravi Iyer , Steven M. McDonald , Thomas R. Glass , Zhiping Yin
IPC分类号： H01L214763
CPC分类号： G03F7/091 , G03F7/092 , H01L21/0276 , H01L21/32 , H01L21/76202 , Y10T428/24471 , Y10T428/24917
摘要： A method of forming an oxidation diffusion barrier stack for use in fabrication of integrated circuits includes forming an inorganic antireflective material layer on a semiconductor substrate assembly with an oxidation diffusion barrier layer then formed on the inorganic antireflective material layer. Another method of forming such a stack includes forming a pad oxide layer on the semiconductor substrate assembly with an inorganic antireflective material layer then formed on the pad oxide layer and an oxidation diffusion barrier layer formed on the antireflective material layer. Another method of forming the stack includes forming a pad oxide layer on the semiconductor substrate assembly. A first oxidation diffusion barrier layer is then formed on the pad oxide layer, an inorganic antireflective material layer is formed on the first oxidation diffusion barrier layer, and a second oxidation diffusion barrier layer is formed on the inorganic antireflective material layer. The antireflective material layer may include a layer of material selected from the group of silicon nitride, silicon oxide, and silicon oxynitride and further may be a silicon-rich layer. The oxidation diffusion barrier stacks may be used for oxidation of field regions for isolation in an integration circuit. Further, the various oxidation diffusion barrier stacks are also described.
摘要翻译：形成用于集成电路制造的氧化扩散阻挡层叠体的方法包括在半导体衬底组件上形成无机抗反射材料层，然后在无机抗反射材料层上形成氧化扩散阻挡层。形成这种堆叠的另一种方法包括在半导体衬底组件上形成衬垫氧化物层，然后在衬垫氧化物层上形成无机抗反射材料层，形成在抗反射材料层上的氧化扩散阻挡层。形成叠层的另一种方法包括在半导体衬底组件上形成焊盘氧化物层。然后在焊盘氧化物层上形成第一氧化扩散阻挡层，在第一氧化扩散阻挡层上形成无机抗反射材料层，在无机抗反射材料层上形成第二氧化扩散阻挡层。抗反射材料层可以包括选自氮化硅，氧化硅和氮氧化硅的材料层，并且还可以是富硅层。氧化扩散阻挡层可以用于场集成电路中用于隔离的场区氧化。此外，还描述了各种氧化扩散阻挡层叠体。

2. 发明授权

US06605502B2 Isolation using an antireflective coating 有权
公开(公告)号：US06605502B2
公开(公告)日：2003-08-12
申请号：US10172895
申请日：2002-06-17
申请人： Ravi Iyer , Steven M. McDonald , Thomas R. Glass , Zhiping Yin
发明人： Ravi Iyer , Steven M. McDonald , Thomas R. Glass , Zhiping Yin
IPC分类号： H01L2176
CPC分类号： G03F7/091 , G03F7/092 , H01L21/0276 , H01L21/32 , H01L21/76202 , Y10T428/24471 , Y10T428/24917
摘要： A method of forming an oxidation diffusion barrier stack for use in fabrication of integrated circuits includes forming an inorganic antireflective material layer on a semiconductor substrate assembly with an oxidation diffusion barrier layer then formed on the inorganic antireflective material layer. Another method of forming such a stack includes forming a pad oxide layer on the semiconductor substrate assembly with an inorganic antireflective material layer then formed on the pad oxide layer and an oxidation diffusion barrier layer formed on the antireflective material layer. Another method of forming the stack includes forming a pad oxide layer on the semiconductor substrate assembly. A first oxidation diffusion barrier layer is then formed on the pad oxide layer, an inorganic antireflective material layer is formed on the first oxidation diffusion barrier layer, and a second oxidation diffusion barrier layer is formed on the inorganic antireflective material layer. The antireflective material layer may include a layer of material selected from the group of silicon nitride, silicon oxide, and silicon oxynitride and further may be a silicon-rich layer. The oxidation diffusion barrier stacks may be used for oxidation of field regions for isolation in an integration circuit. Further, the various oxidation diffusion barrier stacks are also described.

3. 发明授权

US06495450B1 Isolation using an antireflective coating 有权
标题翻译：使用抗反射涂层进行隔离
公开(公告)号：US06495450B1
公开(公告)日：2002-12-17
申请号：US09620790
申请日：2000-07-21
申请人： Ravi Iyer , Steven M. McDonald , Thomas R. Glass , Zhiping Yin
发明人： Ravi Iyer , Steven M. McDonald , Thomas R. Glass , Zhiping Yin
IPC分类号： H01L214763
CPC分类号： G03F7/091 , G03F7/092 , H01L21/0276 , H01L21/32 , H01L21/76202 , Y10T428/24471 , Y10T428/24917
摘要： A method of forming an oxidation diffusion barrier stack for use in fabrication of integrated circuits includes forming an inorganic antireflective material layer on a semiconductor substrate assembly with an oxidation diffusion barrier layer then formed on the inorganic antireflective material layer. Another method of forming such a stack includes forming a pad oxide layer on the semiconductor substrate assembly with an inorganic antireflective material layer then formed on the pad oxide layer and an oxidation diffusion barrier layer formed on the antireflective material layer. The antireflective material layer may include a layer of material selected from the group of silicon nitride, silicon oxide, and silicon oxynitride and further may be a silicon-rich layer. The oxidation diffusion barrier stacks may be used for oxidation of field regions for isolation in an integration circuit. Further, the various oxidation diffusion barrier stacks are also described.
摘要翻译：形成用于集成电路制造的氧化扩散阻挡层叠体的方法包括在半导体衬底组件上形成无机抗反射材料层，然后在无机抗反射材料层上形成氧化扩散阻挡层。形成这种堆叠的另一种方法包括在半导体衬底组件上形成衬垫氧化物层，然后在衬垫氧化物层上形成无机抗反射材料层，形成在抗反射材料层上的氧化扩散阻挡层。抗反射材料层可以包括选自氮化硅，氧化硅和氮氧化硅的材料层，并且还可以是富硅层。氧化扩散阻挡层可以用于场集成电路中用于隔离的场区氧化。此外，还描述了各种氧化扩散阻挡层叠体。

4. 发明授权

US6121133A Isolation using an antireflective coating 失效
公开(公告)号：US6121133A
公开(公告)日：2000-09-19
申请号：US916276
申请日：1997-08-22
申请人： Ravi Iyer , Steven M. McDonald , Thomas R. Glass , Zhiping Yin
发明人： Ravi Iyer , Steven M. McDonald , Thomas R. Glass , Zhiping Yin
IPC分类号： G03F7/11 , G03F7/09 , H01L21/027 , H01L21/316 , H01L21/32 , H01L21/76 , H01L21/762 , H01L21/4763
CPC分类号： G03F7/091 , G03F7/092 , H01L21/0276 , H01L21/32 , H01L21/76202 , Y10T428/24471 , Y10T428/24917
摘要： A method of forming an oxidation diffusion barrier stack for use in fabrication of integrated circuits includes forming an inorganic antireflective material layer on a semiconductor substrate assembly with an oxidation diffusion barrier layer then formed on the inorganic antireflective material layer. Another method of forming such a stack includes forming a pad oxide layer on the semiconductor substrate assembly with an inorganic antireflective material layer then formed on the pad oxide layer and an oxidation diffusion barrier layer formed on the antireflective material layer. Another method of forming the stack includes forming a pad oxide layer on the semiconductor substrate assembly. A first oxidation diffusion barrier layer is then formed on the pad oxide layer, an inorganic antireflective material layer is formed on the first oxidation diffusion barrier layer, and a second oxidation diffusion barrier layer is formed on the inorganic antireflective material layer. The antireflective material layer may include a layer of material selected from the group of silicon nitride, silicon oxide, and silicon oxynitride and further may be a silicon-rich layer. The oxidation diffusion barrier stacks may be used for oxidation of field regions for isolation in an integration circuit. Further, the various oxidation diffusion barrier stacks are also described.

5. 发明授权

US06174590B1 Isolation using an antireflective coating 有权
标题翻译：使用抗反射涂层进行隔离
公开(公告)号：US06174590B1
公开(公告)日：2001-01-16
申请号：US09179722
申请日：1998-10-14
申请人： Ravi Iyer , Steven M. McDonald , Thomas R. Glass , Zhiping Yin
发明人： Ravi Iyer , Steven M. McDonald , Thomas R. Glass , Zhiping Yin
IPC分类号： B32B1500
CPC分类号： G03F7/091 , G03F7/092 , H01L21/0276 , H01L21/32 , H01L21/76202 , Y10T428/24471 , Y10T428/24917
摘要： An oxidation diffusion barrier stack includes an inorganic antireflective material layer formed on a semiconductor substrate assembly and an oxidation diffusion barrier layer formed on the inorganic antireflective material layer. Further, another oxidation diffusion barrier stack may include a pad oxide layer formed on a semiconductor substrate, an oxidation diffusion barrier layer, and an inorganic antireflective material layered between the pad oxide and the oxidation diffusion barrier layer. Yet further another oxidation diffusion barrier stack may include a first oxidation diffusion barrier layer, a second oxidation diffusion barrier layer, and an inorganic antireflective material layered between the first and second oxidation diffusion barrier layers. The inorganic antireflective material may be selected from the group of silicon-rich silicon oxide, silicon-rich silicon nitride, and silicon-rich silicon oxynitride; and/or oxidation diffusion barrier layers may be silicon nitride layers or silicon oxynitride layers.
摘要翻译：氧化扩散阻挡层包括形成在半导体衬底组件上的无机抗反射材料层和形成在无机抗反射材料层上的氧化扩散阻挡层。此外，另一种氧化扩散阻挡层可以包括形成在半导体衬底上的衬垫氧化物层，氧化扩散阻挡层和层叠在衬垫氧化物和氧化扩散阻挡层之间的无机抗反射材料。又一种氧化扩散阻挡层可以包括层叠在第一和第二氧化扩散阻挡层之间的第一氧化扩散阻挡层，第二氧化扩散阻挡层和无机抗反射材料。无机抗反射材料可以选自富硅氧化硅，富硅氮化硅和富硅氧氮化硅的组; 和/或氧化扩散阻挡层可以是氮化硅层或氮氧化硅层。

6. 发明授权

US07576400B1 Circuitry and gate stacks 失效
标题翻译：电路和门堆叠
公开(公告)号：US07576400B1
公开(公告)日：2009-08-18
申请号：US09559903
申请日：2000-04-26
申请人： Zhiping Yin , Ravi Iyer , Thomas R. Glass , Richard Holscher , Ardavan Niroomand , Linda K. Somerville , Gurtej S. Sandhu
发明人： Zhiping Yin , Ravi Iyer , Thomas R. Glass , Richard Holscher , Ardavan Niroomand , Linda K. Somerville , Gurtej S. Sandhu
IPC分类号： H01L29/78
CPC分类号： H01L21/31144 , H01L21/0276 , H01L21/28123 , H01L21/32139
摘要： The present invention includes semiconductor circuitry. Such circuitry encompasses a metal silicide layer over a substrate and a layer comprising silicon, nitrogen and oxygen in physical contact with the metal silicide layer. The present invention also includes a gate stack which encompasses a polysilicon layer over a substrate, a metal silicide layer over the polysilicon layer, an antireflective material layer over the metal silicide layer, a silicon nitride layer over the antireflective material layer, and a layer of photoresist over the silicon nitride layer, for photolithographically patterning the layer of photoresist to form a patterned masking layer from the layer of photoresist and transferring a pattern from the patterned masking layer to the silicon nitride layer, antireflective material layer, metal silicide layer and polysilicon layer. The patterned silicon nitride layer, antireflective material layer, metal silicide layer and polysilicon layer encompass a gate stack.
摘要翻译：本发明包括半导体电路。这种电路包括衬底上的金属硅化物层和与金属硅化物层物理接触的包含硅，氮和氧的层。本发明还包括一个栅极堆叠，其包围衬底上的多晶硅层，多晶硅层上的金属硅化物层，金属硅化物层上的抗反射材料层，抗反射材料层上的氮化硅层，以及一层在氮化硅层上的光致抗蚀剂，用于光刻地图案化该光致抗蚀剂层以从光致抗蚀剂层形成图案化掩模层，并将图案从图案化掩模层转移到氮化硅层，抗反射材料层，金属硅化物层和多晶硅层。图案化氮化硅层，抗反射材料层，金属硅化物层和多晶硅层包围栅极堆叠。

7. 发明授权

US06461950B2 Semiconductor processing methods, semiconductor circuitry, and gate stacks 有权
标题翻译：半导体处理方法，半导体电路和栅极堆叠
公开(公告)号：US06461950B2
公开(公告)日：2002-10-08
申请号：US09870850
申请日：2001-05-30
申请人： Zhiping Yin , Ravi Iyer , Thomas R. Glass , Richard Holscher , Ardavan Niroomand , Linda K. Somerville , Gurtej S. Sandhu
发明人： Zhiping Yin , Ravi Iyer , Thomas R. Glass , Richard Holscher , Ardavan Niroomand , Linda K. Somerville , Gurtej S. Sandhu
IPC分类号： H01L213205
CPC分类号： H01L21/31144 , H01L21/0276 , H01L21/28123 , H01L21/32139
摘要： In one aspect, the invention includes a semiconductor processing method comprising a) forming a metal silicide layer over a substrate; b) depositing a layer comprising silicon, nitrogen and oxygen over the metal silicide layer; and c) while the layer comprising silicon, nitrogen and oxygen is over the metal silicide layer, annealing the metal silicide layer. In another aspect, the invention includes a gate stack forming method, comprising a) forming a polysilicon layer over a substrate; b) forming a metal silicide layer over the polysilicon layer; c) depositing an antireflective material layer over the metal silicide layer; d) forming a silicon nitride layer over the antireflective material layer; e) forming a layer of photoresist over the silicon nitride layer; f) photolithographically patterning the layer of photoresist to form a patterned masking layer from the layer of photoresist; and g) transferring a pattern from the patterned masking layer to the silicon nitride layer, antireflective material layer, metal silicide layer and polysilicon layer to pattern the silicon nitride layer, antireflective material layer, metal silicide layer and polysilicon layer into a gate stack. In yet other aspects, the invention encompasses circuitry and gate stacks.
摘要翻译：一方面，本发明包括一种半导体处理方法，包括：a）在衬底上形成金属硅化物层; b）在所述金属硅化物层上沉积包含硅，氮和氧的层; 和c）当包含硅，氮和氧的层在金属硅化物层之上时，退火金属硅化物层。在另一方面，本发明包括一种栅堆叠形成方法，包括：a）在衬底上形成多晶硅层; b）在所述多晶硅层上形成金属硅化物层; c）在所述金属硅化物层上沉积抗反射材料层; d）在抗反射材料层上形成氮化硅层; e）在氮化硅层上形成光致抗蚀剂层; f）光刻地图案化所述光致抗蚀剂层以从所述光致抗蚀剂层形成图案化掩模层; 并且g）将图案从图案化掩模层转移到氮化硅层，抗反射材料层，金属硅化物层和多晶硅层，以将氮化硅层，抗反射材料层，金属硅化物层和多晶硅层图案化成栅叠层。在另一方面，本发明包括电路和栅极堆叠。

8. 发明授权

US06281100B1 Semiconductor processing methods 有权
标题翻译：半导体加工方法
公开(公告)号：US06281100B1
公开(公告)日：2001-08-28
申请号：US09146842
申请日：1998-09-03
申请人： Zhiping Yin , Ravi Iyer , Thomas R. Glass , Richard Holscher , Ardavan Niroomand , Linda K. Somerville , Gurtej S. Sandhu
发明人： Zhiping Yin , Ravi Iyer , Thomas R. Glass , Richard Holscher , Ardavan Niroomand , Linda K. Somerville , Gurtej S. Sandhu
IPC分类号： H01L213205
CPC分类号： H01L21/31144 , H01L21/0276 , H01L21/28123 , H01L21/32139
摘要： In one aspect, the invention includes a semiconductor processing method comprising a) forming a metal silicide layer over a substrate; b) depositing a layer comprising silicon, nitrogen and oxygen over the metal silicide layer; and c) while the layer comprising silicon, nitrogen and oxygen is over the metal silicide layer, annealing the metal silicide layer. In another aspect, the invention includes a gate stack forming method, comprising a) forming a polysilicon layer over a substrate; b) forming a metal silicide layer over the polysilicon layer; c) depositing an antireflective material layer over the metal silicide layer; d) forming a silicon nitride layer over the antireflective material layer; e) forming a layer of photoresist over the silicon nitride layer; f) photolithographically patterning the layer of photoresist to form a patterned masking layer from the layer of photoresist; and g) transferring a pattern from the patterned masking layer to the silicon nitride layer, antireflective material layer, metal silicide layer and polysilicon layer to pattern the silicon nitride layer, antireflective material layer, metal silicide layer and polysilicon layer into a gate stack. In yet other aspects, the invention encompasses circuitry and gate stacks.
摘要翻译：一方面，本发明包括一种半导体处理方法，包括：a）在衬底上形成金属硅化物层; b）在所述金属硅化物层上沉积包含硅，氮和氧的层; 和c）当包含硅，氮和氧的层在金属硅化物层之上时，退火金属硅化物层。在另一方面，本发明包括一种栅堆叠形成方法，包括：a）在衬底上形成多晶硅层; b）在所述多晶硅层上形成金属硅化物层; c）在所述金属硅化物层上沉积抗反射材料层; d）在抗反射材料层上形成氮化硅层; e）在氮化硅层上形成光致抗蚀剂层; f）光刻地图案化所述光致抗蚀剂层以从所述光致抗蚀剂层形成图案化掩模层; 并且g）将图案从图案化掩模层转移到氮化硅层，抗反射材料层，金属硅化物层和多晶硅层，以将氮化硅层，抗反射材料层，金属硅化物层和多晶硅层图案化成栅叠层。在另一方面，本发明包括电路和栅极堆叠。

9. 发明申请

US20090294878A1 CIRCUITRY AND GATE STACKS 审中-公开
标题翻译：电路和门架
公开(公告)号：US20090294878A1
公开(公告)日：2009-12-03
申请号：US12537577
申请日：2009-08-07
申请人： Zhiping Yin , Ravi Iyer , Thomas R. Glass , Richard Holscher , Ardavan Niroomand , Linda K. Somerville , Gurtej S. Sandhu
发明人： Zhiping Yin , Ravi Iyer , Thomas R. Glass , Richard Holscher , Ardavan Niroomand , Linda K. Somerville , Gurtej S. Sandhu
IPC分类号： H01L29/78
CPC分类号： H01L21/31144 , H01L21/0276 , H01L21/28123 , H01L21/32139
摘要： The present invention includes semiconductor circuitry. Such circuitry encompasses a metal silicide layer over a substrate and a layer comprising silicon, nitrogen and oxygen in physical contact with the metal silicide layer. The present invention also includes a gate stack which encompasses a polysilicon layer over a substrate, a metal silicide layer over the polysilicon layer, an antireflective material layer over the metal silicide layer, a silicon nitride layer over the antireflective material layer, and a layer of photoresist over the silicon nitride layer, for photolithographically patterning the layer of photoresist to form a patterned masking layer from the layer of photoresist and transferring a pattern from the patterned masking layer to the silicon nitride layer, antireflective material layer, metal silicide layer and polysilicon layer. The patterned silicon nitride layer, antireflective material layer, metal silicide layer and polysilicon layer encompass a gate stack.
摘要翻译：本发明包括半导体电路。这种电路包括衬底上的金属硅化物层和与金属硅化物层物理接触的包含硅，氮和氧的层。本发明还包括一个栅极堆叠，其包围衬底上的多晶硅层，多晶硅层上的金属硅化物层，金属硅化物层上的抗反射材料层，抗反射材料层上的氮化硅层，以及一层在氮化硅层上的光致抗蚀剂，用于光刻地图案化该光致抗蚀剂层以从光致抗蚀剂层形成图案化掩模层，并将图案从图案化掩模层转移到氮化硅层，抗反射材料层，金属硅化物层和多晶硅层。图案化氮化硅层，抗反射材料层，金属硅化物层和多晶硅层包围栅极堆叠。

10. 发明授权

US09076888B2 Silicided recessed silicon 有权
公开(公告)号：US09076888B2
公开(公告)日：2015-07-07
申请号：US11614802
申请日：2006-12-21
申请人： Hasan Nejad , Thomas A. Figura , Gordon A. Haller , Ravi Iyer , John Mark Meldrim , Justin Harnish
发明人： Hasan Nejad , Thomas A. Figura , Gordon A. Haller , Ravi Iyer , John Mark Meldrim , Justin Harnish
IPC分类号： H01L23/48 , H01L23/52 , H01L29/40 , H01L21/8238 , H01L21/28 , H01L21/8234 , H01L27/108 , H01L29/49 , H01L29/66
CPC分类号： H01L21/823835 , H01L21/28097 , H01L21/823418 , H01L21/823443 , H01L21/823814 , H01L27/10852 , H01L27/10876 , H01L27/10897 , H01L29/4975 , H01L29/66621 , H01L2924/0002 , H01L2924/00
摘要： Methods and structures are provided for full silicidation of recessed silicon. Silicon is provided within a trench. A mixture of metals is provided over the silicon in which one of the metals diffuses more readily in silicon than silicon does in the metal, and another of the metals diffuses less readily in silicon than silicon does in the metal. An exemplary mixture includes 80% nickel and 20% cobalt. The silicon within the trench is allowed to fully silicide without void formation, despite a relatively high aspect ratio for the trench. Among other devices, recessed access devices (RADs) can be formed by the method for memory arrays.

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