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1. 发明授权

US5059243A Tetra aza ligand systems as complexing agents for electroless deposition of copper 失效
标题翻译： TETRA AZA配体系统作为电解沉积铜的复合剂
公开(公告)号：US5059243A
公开(公告)日：1991-10-22
申请号：US344878
申请日：1989-04-28
申请人： Rangarajan Jagannathan , Randolph F. Knarr , Mahadevaiyer Krishnan , Gregory P. Wandy
发明人： Rangarajan Jagannathan , Randolph F. Knarr , Mahadevaiyer Krishnan , Gregory P. Wandy
IPC分类号： C23C18/40
CPC分类号： C23C18/40
摘要： An electroless copper plating bath uses a series of tetradentate nitrogen ligands. The components of the bath may be substituted without extensive re-optimization of the bath. The Cu-tetra-aza ligand baths operates over a pH range between 7 and 12. Stable bath formulations employing various buffers, reducing agents and ligands have been developed. The process can be used for metal deposition at lower pH and provides the capability to use additive processing for metallization in the presence of polyimide, positive photoresist and other alkali sensitive substrates.

2. 发明授权

US5102456A Tetra aza ligand systems as complexing agents for electroless deposition of copper 失效
标题翻译：四氮杂配体体系作为铜无电沉积的络合剂
公开(公告)号：US5102456A
公开(公告)日：1992-04-07
申请号：US618769
申请日：1990-11-27
申请人： Rangarajan Jagannathan , Randolph F. Knarr , Mahadevaiyer Krishnan , Gregory P. Wandy
发明人： Rangarajan Jagannathan , Randolph F. Knarr , Mahadevaiyer Krishnan , Gregory P. Wandy
IPC分类号： C23C18/40
CPC分类号： C23C18/40 , Y10T428/12694 , Y10T428/12903 , Y10T428/31681
摘要： An electroless copper plating bath uses a series of tetradentate nitrogen ligands. The components of the bath may be substituted without extensive re-optimization of the bath. The Cu-tetra-aza ligand baths operates over a pH range between 7 and 12. Stable bath formulations employing various buffers, reducing agents and ligands have been developed. The process can be used for metal deposition at lower pH and provides the capability to use additive processing for metallization in the presence of polyimide, positive photoresist and other alkali sensitive substrates.
摘要翻译：化学镀铜浴使用一系列四齿氮配体。浴的组分可以被代替而没有大量重新优化浴。 Cu-四氮杂配体浴在7和12之间的pH范围内运行。已经开发了使用各种缓冲液，还原剂和配体的稳定浴配方。该方法可用于较低pH下的金属沉积，并提供在聚酰亚胺，正性光致抗蚀剂和其他碱敏感基材存在下使用添加剂处理进行金属化的能力。

3. 发明授权

US4818286A Electroless copper plating bath 失效
标题翻译：无电镀铜浴
公开(公告)号：US4818286A
公开(公告)日：1989-04-04
申请号：US165663
申请日：1988-03-08
申请人： Rangarajan Jagannathan , Mahadevaiyer Krishnan , Gregory P. Wandy
发明人： Rangarajan Jagannathan , Mahadevaiyer Krishnan , Gregory P. Wandy
IPC分类号： C23C18/40 , C23C18/38 , B05D3/10
CPC分类号： C23C18/40
摘要： An electroless copper plating bath contains copper sulfate, EDTA, DMAB and triethanolamine and is adjusted to a pH in the range between approximately 8 and 9. The addition of cyanide ions alone or preferably with a sulfur compound such as thiodipropionic acid or a nitrogen compound such as 1,10 phenanthroline provided bright copper deposits. The use of an electroless plating bath operating at a low pH permits electroless plating of alkali sensitive substrates.

4. 发明授权

US6114249A Chemical mechanical polishing of multiple material substrates and slurry having improved selectivity 失效
标题翻译：多种材料基材和浆料的化学机械抛光具有提高的选择性
公开(公告)号：US6114249A
公开(公告)日：2000-09-05
申请号：US37205
申请日：1998-03-10
申请人： Donald Francis Canaperi , Rangarajan Jagannathan , Mahadevaiyer Krishnan , Clifford Owen Morgan , Terrance Monte Wright
发明人： Donald Francis Canaperi , Rangarajan Jagannathan , Mahadevaiyer Krishnan , Clifford Owen Morgan , Terrance Monte Wright
IPC分类号： B24B37/00 , C09K13/00 , H01L21/304 , H01L21/3105 , H01L21/302
CPC分类号： H01L21/31053 , C09K13/00
摘要： A colloidal silica slurry containing triethanolamine is used in a chemical mechanical polishing process to polish multiple material substrates, such as silicon wafers containing silicon oxide where a thin underlayer of silicon nitride is used as a stop layer. The colloidal silica slurry containing triethanolamine is capable of achieving an oxide to nitride selectivity during polishing up to a demonstrated ratio of 28:1.
摘要翻译：含有三乙醇胺的胶体二氧化硅浆料用于化学机械抛光工艺中以抛光多种材料基底，例如含有氧化硅的硅晶片，其中使用薄的氮化硅底层作为停止层。含有三乙醇胺的胶体二氧化硅浆料在抛光期间能够达到氧化物至氮化物选择性，达到显示的比例为28:1。

5. 发明授权

US5635253A Method of replenishing electroless gold plating baths 失效
标题翻译：补充无电镀金液的方法
公开(公告)号：US5635253A
公开(公告)日：1997-06-03
申请号：US487808
申请日：1995-06-07
申请人： Donald F. Canaperi , Rangarajan Jagannathan , Mahadevaiyer Krishnan
发明人： Donald F. Canaperi , Rangarajan Jagannathan , Mahadevaiyer Krishnan
IPC分类号： C23C18/31 , C23C18/16 , C23C18/44 , B32B17/10
CPC分类号： C23C18/1617
摘要： A replenishing solution for a cyanide-based electroless gold plating bath. The solution includes a gold(III) halide such as gold chloride, gold bromide, tetrachloroaurate (and its sodium, potassium, and ammonium salts), and tetrabromoaurate (and its sodium, potassium, and ammonium salts). The replenishing solution also may include an alkali (such as potassium hydroxide, sodium hydroxide, and ammonium hydroxide) to maintain the pH of the solution between 8 and 14. Also provided is a method of replenishing a cyanide-based electroless gold plating bath with the solution of the present invention.
摘要翻译：一种基于氰化物的无电镀金液的补充溶液。该溶液包括金（III）卤化物如氯化金，溴化金，四氯牛磺酸盐（及其钠盐，钾盐和铵盐）和四溴乙酸盐（及其钠盐，钾盐和铵盐）。补充溶液还可以包括碱（例如氢氧化钾，氢氧化钠和氢氧化铵），以保持溶液的pH在8和14之间。还提供了一种补充基于氰化物的无电镀金浴的方法，本发明的溶液。

6. 发明授权

US06361402B1 Method for planarizing photoresist 失效
标题翻译：平版化光刻胶的方法
公开(公告)号：US06361402B1
公开(公告)日：2002-03-26
申请号：US09427492
申请日：1999-10-26
申请人： Donald F. Canaperi , Rangarajan Jagannathan , Mahadevaiyer Krishnan , Max G. Levy , Uma Satyendra , Matthew Sendelbach , James A. Tornello , William Wille
发明人： Donald F. Canaperi , Rangarajan Jagannathan , Mahadevaiyer Krishnan , Max G. Levy , Uma Satyendra , Matthew Sendelbach , James A. Tornello , William Wille
IPC分类号： B24B100
CPC分类号： B24B37/0056 , B24B37/044 , H01L21/31053 , H01L21/76819
摘要： A method for polishing an object having a layer of photoresist, the method, employing the following steps: a) applying a layer of slurry on an a layer of photoresist on an object having a first and a second side, the layer of photoresist on one of the first and second side, the object having a center axis perpendicular to the first and second side; b) contacting the layer of slurry with a pad having a first and second side, the first side of the pad exerting a force on the slurry.
摘要翻译：一种用于抛光具有光致抗蚀剂层的物体的方法，该方法采用以下步骤：a）在具有第一和第二侧的物体上的一层光致抗蚀剂上施加一层浆料，一层光致抗蚀剂所述第一和第二侧的物体具有垂直于第一和第二侧的中心轴; b）使浆料层与具有第一和第二侧的垫接触，垫的第一侧在浆料上施加力。

7. 发明授权

US07384835B2 Metal oxide field effect transistor with a sharp halo and a method of forming the transistor 有权
标题翻译：具有尖锐光晕的金属氧化物场效应晶体管和形成晶体管的方法
公开(公告)号：US07384835B2
公开(公告)日：2008-06-10
申请号：US11420318
申请日：2006-05-25
申请人： Huajie Chen , Judson R Holt , Rangarajan Jagannathan , Wesley C Natzle , Michael R Sievers , Richard S Wise
发明人： Huajie Chen , Judson R Holt , Rangarajan Jagannathan , Wesley C Natzle , Michael R Sievers , Richard S Wise
IPC分类号： H01L21/335
CPC分类号： H01L29/66636 , H01L29/6659 , H01L29/7833
摘要： Disclosed are embodiments of a MOSFET with defined halos that are bound to defined source/drain extensions and a method of forming the MOSFET. A semiconductor layer is etched to form recesses that undercut a gate dielectric layer. A low energy implant forms halos. Then, a COR pre-clean is performed and the recesses are filled by epitaxial deposition. The epi can be in-situ doped or subsequently implanted to form source/drain extensions. Alternatively, the etch is immediately followed by the COR pre-clean, which is followed by epitaxial deposition to fill the recesses. During the epitaxial deposition process, the deposited material is doped to form in-situ doped halos and, then, the dopant is switched to form in-situ doped source/drain extensions adjacent to the halos. Alternatively, after the in-situ doped halos are formed the deposition process is performed without dopants and an implant is used to form source/drain extensions.
摘要翻译：公开了具有限定的限定的卤素的MOSFET的实施例，其限定的源极/漏极扩展部分以及形成MOSFET的方法。蚀刻半导体层以形成切割栅极介电层的凹部。低能量植入物形成晕轮。然后，执行COR预清洁，并且通过外延沉积填充凹部。外延可以被原位掺杂或随后植入以形成源/漏扩展。或者，蚀刻之后紧接着是COR预清洁，随后进行外延沉积以填充凹部。在外延沉积工艺期间，沉积的材料被掺杂以形成原位掺杂的光晕，然后切换掺杂剂以形成邻近光晕的原位掺杂的源极/漏极延伸。或者，在形成原位掺杂的光晕之后，进行沉积工艺而没有掺杂剂，并且使用注入来形成源极/漏极延伸部。

8. 发明授权

US06200891B1 Removal of dielectric oxides 失效
标题翻译：去除介电氧化物
公开(公告)号：US06200891B1
公开(公告)日：2001-03-13
申请号：US09133537
申请日：1998-08-13
申请人： Rangarajan Jagannathan , Karen P. Madden , Kenneth J. McCullough , Harald F. Okorn-Schmidt , Keith R. Pope , David L. Rath
发明人： Rangarajan Jagannathan , Karen P. Madden , Kenneth J. McCullough , Harald F. Okorn-Schmidt , Keith R. Pope , David L. Rath
IPC分类号： H01L214763
CPC分类号： H01L21/31111
摘要： Oxides such as those commonly used in interlevel dielectrics may be removed employing a liquid composition containing a fluoride-containing compound and an organic solvent. Preferred compositions are substantially nonaqueous and include an anhydride. Improved methods for selective removal of oxides, especially for removal of silicon oxides where pre-exposed (or conductive metal - containing) features are present, where metal (conductive metal - contaimg) features are to be exposed by the desired oxide removal, or where the silcon oxide otherwise contacts metal (or conductive metal - containing) features are provided.
摘要翻译：可以使用含有含氟化合物和有机溶剂的液体组合物来除去在层间电介质中常用的那些氧化物。优选的组合物基本上是非水的并且包括酸酐。改进的选择性去除氧化物的方法，特别是用于去除其中预暴露（或含导电金属）特征的氧化硅，其中金属（导电金属 - 接枝）特征将通过所需的氧化物去除而暴露，或其中另外提供了氧化锡氧化物接触金属（或含导电金属）特征。

9. 发明授权

US07361611B2 Doped nitride film, doped oxide film and other doped films 有权
标题翻译：掺杂氮化物膜，掺杂氧化物膜等掺杂膜
公开(公告)号：US07361611B2
公开(公告)日：2008-04-22
申请号：US11349233
申请日：2006-02-08
申请人： Ashima B. Chakravarti , Judson Holt , Kevin K. Chan , Sadanand V. Deshpande , Rangarajan Jagannathan
发明人： Ashima B. Chakravarti , Judson Holt , Kevin K. Chan , Sadanand V. Deshpande , Rangarajan Jagannathan
IPC分类号： H01L21/31
CPC分类号： H01L29/7843 , C23C16/308 , C23C16/34 , C23C16/401 , H01L21/0214 , H01L21/0217 , H01L21/02271 , H01L21/3143 , H01L21/3144 , H01L21/3145 , H01L21/3148 , H01L21/31608 , H01L21/31612 , H01L21/3185 , H01L21/76801 , H01L21/76829 , H01L21/76834 , H01L29/7833 , H01L29/78675
摘要： Adding at least one non-silicon precursor (such as a germanium precursor, a carbon precursor, etc.) during formation of a silicon nitride, silicon oxide, silicon oxynitride or silicon carbide film improves the deposition rate and/or makes possible tuning of properties of the film, such as tuning of the stress of the film. Also, in a doped silicon oxide or doped silicon nitride or other doped structure, the presence of the dopant may be used for measuring a signal associated with the dopant, as an etch-stop or otherwise for achieving control during etching.
摘要翻译：在形成氮化硅，氧化硅，氮氧化硅或碳化硅膜期间添加至少一种非硅前体（例如锗前体，碳前体等）改善了沉积速率和/或使得可以调谐性能的电影，如调整电影的压力。此外，在掺杂的氧化硅或掺杂氮化硅或其它掺杂结构中，掺杂剂的存在可用于测量与掺杂剂相关的信号，作为蚀刻停止或用于在蚀刻期间实现控制。

10. 发明授权

US06254796B1 Selective etching of silicate 失效
标题翻译：选择性蚀刻硅酸盐
公开(公告)号：US06254796B1
公开(公告)日：2001-07-03
申请号：US09221596
申请日：1998-12-29
申请人： David L. Rath , Glenn W. Gale , Rangarajan Jagannathan , Kenneth J. McCullough , Karen P. Madden , Harald F. Okorn-Schmidt , Keith R. Pope
发明人： David L. Rath , Glenn W. Gale , Rangarajan Jagannathan , Kenneth J. McCullough , Karen P. Madden , Harald F. Okorn-Schmidt , Keith R. Pope
IPC分类号： H01L21302
CPC分类号： H01L21/31111 , C03C15/00 , C09K13/08
摘要： A silicate glass is selectively etched employing a composition containing a fluoride containing compound and certain organic solvents. Preferred compositions also include water.
摘要翻译：使用含有含氟化合物和某些有机溶剂的组合物选择性地蚀刻硅酸盐玻璃。优选的组合物还包括水。

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