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1. 发明授权

US06261157B1 Selective damascene chemical mechanical polishing 失效
标题翻译：选择性镶嵌化学机械抛光
公开(公告)号：US06261157B1
公开(公告)日：2001-07-17
申请号：US09318225
申请日：1999-05-25
申请人： Rajeev Bajaj , Fritz C. Redeker , John M. White , Shijian Li , Yutao Ma
发明人： Rajeev Bajaj , Fritz C. Redeker , John M. White , Shijian Li , Yutao Ma
IPC分类号： B24B722
CPC分类号： B24B37/345 , B24B27/0023 , H01L21/02074 , H01L21/3212
摘要： A selective Damascene chemical mechanical polishing (CMP) technique is used to planarize a semiconductor device to remove surface topography. The semiconductor device includes a semiconductor layer formed on a substrate, an insulating layer formed over the semiconductor layer and patterned to expose a portion of the semiconductor layer, a barrier layer formed over the insulating layer and the exposed portion of the semiconductor layer, and an electrically conductive layer formed over the barrier layer. The semiconductor device is pressed against a first rotating polishing pad that has no embedded abrasive particles to remove a portion of the conductive layer that overlies both the barrier layer and the insulating layer. The semiconductor device is then pressed against a second rotating polishing pad that has embedded abrasive particles to expose a portion of the barrier layer that overlies the insulating layer. The device is then pressed against a third rotating polishing pad that has no embedded abrasive particles to remove the portion of the barrier layer that overlies the insulating layer.
摘要翻译：使用选择性的大马士革化学机械抛光（CMP）技术来平面化半导体器件以去除表面形貌。半导体器件包括形成在衬底上的半导体层，形成在半导体层上并被图案化以暴露半导体层的一部分的绝缘层，形成在绝缘层上的阻挡层和半导体层的暴露部分，形成在阻挡层上的导电层。半导体器件被压在没有嵌入的磨料颗粒的第一旋转抛光垫上，以去除覆盖阻挡层和绝缘层两者的导电层的一部分。然后将半导体器件压在具有嵌入的磨料颗粒的第二旋转抛光垫上，以暴露位于绝缘层上的阻挡层的一部分。然后将装置压在没有嵌入的磨料颗粒的第三旋转抛光垫上，以去除覆盖在绝缘层上的阻挡层的部分。

2. 发明授权

US08623456B2 Methods for atomic layer deposition 有权
标题翻译：原子层沉积方法
公开(公告)号：US08623456B2
公开(公告)日：2014-01-07
申请号：US13605926
申请日：2012-09-06
申请人： Hyungsuk Alexander Yoon , Mikhail Korolik , Fritz C. Redeker , John M. Boyd , Yezdi Dordi
发明人： Hyungsuk Alexander Yoon , Mikhail Korolik , Fritz C. Redeker , John M. Boyd , Yezdi Dordi
IPC分类号： C23C16/22 , C23C16/44
CPC分类号： C23C16/45551 , C23C16/45517 , C23C16/54 , H01L21/28562 , H01L21/76843
摘要： A method of depositing a thin film by atomic layer deposition (ALD) on a substrate surface is disclosed. The disclosed method includes placing an ALD deposition proximity head above the substrate with at least one gas channel configured to dispense a gas to an active process region of the substrate surface. The ALD deposition proximity head extends over and is being spaced apart from the active process region of the substrate surface when present. After a pulse of a first reactant gas is dispensed on the active process region of the substrate surface underneath the proximity head, a pulse of a second reactant gas is dispensed on the active process region of the substrate surface underneath the proximity head to react with the first reactant gas to form a portion of the thin layer of ALD film on the surface of substrate underneath the proximity head.
摘要翻译：公开了一种通过原子层沉积（ALD）在衬底表面上沉积薄膜的方法。所公开的方法包括将ALD沉积接近头放置在衬底上方，其中至少一个气体通道被配置为将气体分配到衬底表面的活性过程区域。 ALD沉积接近头在存在时延伸超过衬底表面的有效工艺区域并且与其间隔开。在将第一反应气体的脉冲分配在邻近头部下方的衬底表面的有源工艺区域上之后，第二反应气体的脉冲被分配在邻近头部下方的衬底表面的有源工艺区域上以与第一反应气体，以在邻近头部下方的基底表面上形成一部分ALD薄膜。

3. 发明授权

US08323420B2 Method for removing material from semiconductor wafer and apparatus for performing the same 失效
标题翻译：从半导体晶片去除材料的方法及其执行方法
公开(公告)号：US08323420B2
公开(公告)日：2012-12-04
申请号：US11174080
申请日：2005-06-30
申请人： Mikhail Korolik , Michael Ravkin , John deLarios , Fritz C. Redeker , John M. Boyd
发明人： Mikhail Korolik , Michael Ravkin , John deLarios , Fritz C. Redeker , John M. Boyd
IPC分类号： B08B7/00 , B08B7/04 , B08B3/00
CPC分类号： H01L21/67051 , G03F7/422 , H01L21/02063 , H01L21/02071 , H01L21/6704 , Y10S134/902
摘要： A pressure is maintained within a volume within which a semiconductor wafer resides at a pressure that is sufficient to maintain a liquid state of a precursor fluid to a non-Newtonian fluid. The precursor fluid is disposed proximate to a material to be removed from the semiconductor wafer while maintaining the precursor fluid in the liquid state. The pressure is reduced in the volume within which the semiconductor wafer resides such that the precursor fluid disposed on the wafer within the volume is transformed into the non-Newtonian fluid. An expansion of the precursor fluid and movement of the precursor fluid relative to the wafer during transformation into the non-Newtonian fluid causes the resulting non-Newtonian fluid to remove the material from the semiconductor wafer.
摘要翻译：压力保持在其中半导体晶片所处于的体积内的压力足以将前体流体的液体状态保持为非牛顿流体。前体流体靠近要从半导体晶片去除的材料设置，同时保持前体流体处于液态。在半导体晶片所在的体积中的压力降低，使得设置在体积内的晶片上的前体流体被转化成非牛顿流体。在转化成非牛顿流体期间，前体流体的膨胀和前体流体相对于晶片的移动导致所得到的非牛顿流体从半导体晶片中去除材料。

4. 发明申请

US20120269987A1 Processes and Systems for Engineering a Barrier Surface for Copper Deposition 审中-公开
标题翻译：用于铜沉积的阻挡层表面工艺和系统
公开(公告)号：US20120269987A1
公开(公告)日：2012-10-25
申请号：US13534366
申请日：2012-06-27
申请人： Yezdi Dordi , John Boyd , Tiruchirapalli Arunagiri , Hyungsuk Alexander Yoon , Fritz C. Redeker , William Thie , Arthur M. Howald
发明人： Yezdi Dordi , John Boyd , Tiruchirapalli Arunagiri , Hyungsuk Alexander Yoon , Fritz C. Redeker , William Thie , Arthur M. Howald
IPC分类号： C23C18/54 , C23C16/06 , B05D5/12
CPC分类号： H01L21/7685 , C23C18/1632 , C23C18/1651 , C23C18/1844 , H01L21/0206 , H01L21/02063 , H01L21/02068 , H01L21/02074 , H01L21/28518 , H01L21/288 , H01L21/32115 , H01L21/32135 , H01L21/32136 , H01L21/67161 , H01L21/67207 , H01L21/76814 , H01L21/7684 , H01L21/76843 , H01L21/76846 , H01L21/76849 , H01L21/76862 , H01L21/76867 , H01L21/76871 , H01L21/76879
摘要： An integrated system for processing a substrate in controlled environment to enable deposition of a thin copper seed layer on a surface of a metallic barrier layer of a copper interconnect is provided. The system includes a lab-ambient transfer chamber, a vacuum transfer chamber, a vacuum process module for cleaning an exposed surface of a metal oxide of a underlying metal, a vacuum process module for depositing the metallic barrier layer, and a controlled-ambient transfer chamber filled with an inert gas, wherein at least one controlled-ambient process module is coupled to the controlled-ambient transfer chamber. In addition, the system includes an electroless copper deposition process module used to deposit the thin layer of copper seed layer on the surface of the metallic barrier layer.
摘要翻译：提供了一种用于在受控环境中处理衬底以使薄铜种子层在铜互连的金属阻挡层的表面上沉积的集成系统。该系统包括实验室环境转移室，真空转移室，用于清洁下面金属的金属氧化物的暴露表面的真空处理模块，用于沉积金属阻挡层的真空处理模块和受控环境转移室内装有惰性气体，其中至少一个受控环境的过程模块耦合到受控环境的传送室。此外，该系统包括用于在金属阻挡层的表面上沉积铜籽晶层的薄层的无电铜沉积工艺模块。

5. 发明申请

US20110306203A1 INTERCONNECT STRUCTURE AND METHOD OF MANUFACTURING A DAMASCENE STRUCTURE 审中-公开
标题翻译：互连结构和制造大分子结构的方法
公开(公告)号：US20110306203A1
公开(公告)日：2011-12-15
申请号：US13218035
申请日：2011-08-25
申请人： Yezdi Dordi , John M. Boyd , Fritz C. Redeker , William Thie , Tiruchirapalli Arunagiri , Hyungsuk Alexander Yoon
发明人： Yezdi Dordi , John M. Boyd , Fritz C. Redeker , William Thie , Tiruchirapalli Arunagiri , Hyungsuk Alexander Yoon
IPC分类号： H01L21/768
CPC分类号： H01L23/53238 , H01L21/28562 , H01L21/76846 , H01L21/76856 , H01L21/76862 , H01L21/76873 , H01L21/76874 , H01L2221/1089 , H01L2924/0002 , H01L2924/00
摘要： An interconnect structure is provided, including a layer of dielectric material having at least one opening and a first barrier layer on sidewalls defining the opening. A ruthenium-containing second barrier layer overlays the first barrier layer, the second barrier layer having a ruthenium zone, a ruthenium oxide zone, and a ruthenium-rich zone. The ruthenium zone is interposed between the first barrier layer and the ruthenium oxide zone. The ruthenium oxide zone is interposed between the ruthenium zone and the ruthenium-rich zone.
摘要翻译：提供互连结构，包括具有至少一个开口的介电材料层和在限定开口的侧壁上的第一阻挡层。含钌的第二阻挡层覆盖第一阻挡层，第二阻挡层具有钌区，氧化钌区和富钌区。钌区介于第一阻挡层和氧化钌区之间。钌氧化物区位于钌区和富钌区之间。

6. 发明申请

US20100319726A1 SUBSTRATE PREPARATION USING MEGASONIC COUPLING FLUID MENISCUS 审中-公开
标题翻译：基质制备使用MEGASONIC联合流体液体
公开(公告)号：US20100319726A1
公开(公告)日：2010-12-23
申请号：US12869748
申请日：2010-08-27
申请人： John M. Boyd , Fritz C. Redeker , Seokmin Yun
发明人： John M. Boyd , Fritz C. Redeker , Seokmin Yun
IPC分类号： B08B3/12
CPC分类号： H01L21/67051 , B08B3/123 , G03F7/30 , H01L21/67028 , H01L21/67034 , Y10S134/902
摘要： A method for cleaning a substrate is provided. The method includes receiving the substrate using a carrier that forms a circular opening, the substrate being positioned in the circular opening of the carrier. The holding of the substrate enables exposure of both a first side and a second side of the substrate at a same time. Then, moving the substrate along a direction, and while moving the substrate: (i) applying a chemistry onto the first side of the substrate, where the first side of the substrate having material to be removed; (ii) forming a fluid meniscus against the second side of the substrate at a location that is opposite a location onto which the chemistry is applied; and (iii) applying megasonic energy to the fluid meniscus while the fluid meniscus is applied against the second side. The megasonic energy increases mass transport of the chemistry to enhance removal of the material to be removed from the first side.
摘要翻译：提供一种清洗基板的方法。该方法包括使用形成圆形开口的载体接收基板，该基板位于载体的圆形开口中。基板的保持能够同时曝光基板的第一面和第二面。然后，沿着一个方向移动衬底，同时移动衬底：（i）将化学物质施加到衬底的第一侧上，其中衬底的第一侧具有待除去的材料; （ii）在与施加化学物质的位置相对的位置处形成针对衬底的第二侧的流体弯液面; 和（iii）当液体弯月面施加在第二侧上时，将兆声波能量施加到流体弯月面。兆声波能量增加了化学物质的传输，以增强从第一侧去除的材料的去除。

7. 发明申请

US20100239767A1 Apparatus for Applying a Plating Solution for Electroless Deposition 审中-公开
标题翻译：用于电镀沉积的电镀溶液的设备
公开(公告)号：US20100239767A1
公开(公告)日：2010-09-23
申请号：US12790558
申请日：2010-05-28
申请人： Yezdi Dordi , William Thie , John M. Boyd , Fritz C. Redeker , Aleksander Owczarz
发明人： Yezdi Dordi , William Thie , John M. Boyd , Fritz C. Redeker , Aleksander Owczarz
IPC分类号： B05D3/00
CPC分类号： H01L21/02074 , C23C18/1628 , C23C18/38 , C23C18/50 , H01L21/288 , H01L21/76849 , H01L21/76883 , Y10S134/902
摘要： An electroless plating chamber is provided. The electroless plating chamber includes a chuck configured to support a substrate and a bowl surrounding a base and a sidewall of the chuck. The base has an annular channel defined along an inner diameter of the base. The chamber includes a drain connected to the annular channel. The drain is capable of removing fluid collected from the chuck. A proximity head capable of cleaning and substantially drying the substrate is included in the chamber. A method for performing an electroless plating operation is also provided.
摘要翻译：提供无电镀室。化学镀室包括配置成支撑基板的卡盘和围绕卡盘的基部和侧壁的碗。底座具有沿着底座的内径限定的环形通道。该腔室包括连接到环形通道的排水口。排水口能够去除从卡盘收集的流体。能够清洁和基本上干燥基板的接近头包括在腔室中。还提供了一种执行化学镀操作的方法。

8. 发明申请

US20090134520A1 PROCESS INTEGRATION SCHEME TO LOWER OVERALL DIELECTRIC CONSTANT IN BEOL INTERCONNECT STRUCTURES 审中-公开
标题翻译：过程集成方案降低BEOL互连结构中的总体电介质常数
公开(公告)号：US20090134520A1
公开(公告)日：2009-05-28
申请号：US12366235
申请日：2009-02-05
申请人： Nicolas Bright , David Hemker , Fritz C. Redeker , Yezdi Dordi
发明人： Nicolas Bright , David Hemker , Fritz C. Redeker , Yezdi Dordi
IPC分类号： H01L23/52
CPC分类号： H01L21/76822 , H01L21/76805 , H01L21/76807 , H01L21/76816 , H01L21/76843 , H01L21/76846 , H01L21/76849 , H01L2924/0002 , H01L2924/00
摘要： Back-End of Line (BEoL) interconnect structures, and methods for their manufacture, are provided. The structures are characterized by narrower conductive lines and reduced overall dielectric constant values. Conformal diffusion barrier layers, and selectively formed capping layers, are used to isolate the conductive lines and vias from surrounding dielectric layers in the interconnect structures. The methods of the invention employ techniques to narrow the openings in photoresist masks in order to define narrower vias. More narrow vias increase the amount of misalignment that can be tolerated between the vias and the conductive lines.
摘要翻译：提供了后端（BEoL）互连结构及其制造方法。这些结构的特征在于导线越窄，总体介电常数值越小。保形扩散阻挡层和选择性形成的覆盖层用于将导线和通孔与互连结构中的周围电介质层隔离。本发明的方法采用技术来缩小光致抗蚀剂掩模中的开口，以便限定更窄的通孔。更窄的通孔增加了通孔和导电线之间可以容许的不对准量。

9. 发明申请

US20080254621A1 Wafer Electroless Plating System and Associated Methods 有权
标题翻译：晶圆化学镀系统及相关方法
公开(公告)号：US20080254621A1
公开(公告)日：2008-10-16
申请号：US11735984
申请日：2007-04-16
申请人： William Thie , John M. Boyd , Fritz C. Redeker , Yezdi Dordi , John Parks , Tiruchirapalli Arunagiri , Aleksander Owczarz , Todd Balisky , Clint Thomas , Jacob Wylie
发明人： William Thie , John M. Boyd , Fritz C. Redeker , Yezdi Dordi , John Parks , Tiruchirapalli Arunagiri , Aleksander Owczarz , Todd Balisky , Clint Thomas , Jacob Wylie
IPC分类号： H01L21/44 , B05C11/11 , B05C13/00
CPC分类号： H01L21/288 , C23C18/1619 , C23C18/1632 , H01L21/76873
摘要： A dry-in/dry-out system is disclosed for wafer electroless plating. The system includes an upper zone for wafer ingress/egress and drying operations. Proximity heads are provided in the upper zone to perform the drying operations. The system also includes a lower zone for electroless plating operations. The lower zone includes an electroless plating apparatus that implements a wafer submersion by fluid upwelling method. The upper and lower zones of the system are enclosed by a dual-walled chamber, wherein the inner wall is a chemically inert plastic and the outer wall is a structural metal. The system interfaces with a fluid handling system which provides the necessary chemistry supply and control for the system. The system is ambient controlled. Also, the system interfaces with an ambient controlled managed transfer module (MTM).
摘要翻译：公开了一种用于晶片无电镀的干/干输出系统。该系统包括用于晶片入口/出口和干燥操作的上部区域。靠近头部设置在上部区域以执行干燥操作。该系统还包括用于无电镀操作的下部区域。下部区域包括通过流体上升流法实现晶片浸没的化学镀设备。系统的上部和下部区域由双壁室围住，其中内壁是化学惰性塑料，外壁是结构金属。系统与流体处理系统接口，为系统提供必要的化学物质供应和控制。系统是环境控制的。此外，系统与环境受控的托管传输模块（MTM）接口。

10. 发明申请

US20080227369A1 Apparatus and Method for Confined Area Planarization 有权
标题翻译：密闭面平面化装置与方法
公开(公告)号：US20080227369A1
公开(公告)日：2008-09-18
申请号：US12129612
申请日：2008-05-29
申请人： John M. Boyd , Fritz C. Redeker , Yezdi Dordi , Michael Ravkin , John de Larios
发明人： John M. Boyd , Fritz C. Redeker , Yezdi Dordi , Michael Ravkin , John de Larios
IPC分类号： B24B57/02 , H05K3/07 , C25F3/00
CPC分类号： H01L21/32115 , C25F7/00
摘要： A proximity head and associated method of use is provided for performing confined area planarization of a semiconductor wafer. The proximity head includes a chamber defined to maintain an electrolyte solution. A cathode is disposed within the chamber in exposure to the electrolyte solution. A cation exchange membrane is disposed over a lower opening of the chamber. A top surface of the cation exchange membrane is in direct exposure to the electrolyte solution to be maintained within the chamber. A fluid supply channel is defined to expel fluid at a location adjacent to a lower surface of the cation exchange membrane. A vacuum channel is defined to provide suction at a location adjacent to the lower surface of the cation exchange membrane, such that the fluid to be expelled from the fluid supply channel is made to flow over the lower surface of the cation exchange membrane.
摘要翻译：提供接近头和相关联的使用方法用于执行半导体晶片的限定区域平坦化。邻近头包括限定为维持电解质溶液的室。在室内暴露于电解质溶液中设置阴极。阳离子交换膜设置在室的下部开口的上方。阳离子交换膜的顶表面直接暴露于电解质溶液中以保持在室内。流体供应通道被定义为在邻近阳离子交换膜的下表面的位置排出流体。定义真空通道以在邻近阳离子交换膜的下表面的位置处提供吸力，使得要从流体供应通道排出的流体流过阳离子交换膜的下表面。

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