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1. 发明授权

US07405521B2 Multiple frequency plasma processor method and apparatus 有权
标题翻译：多频等离子体处理器的方法和装置
公开(公告)号：US07405521B2
公开(公告)日：2008-07-29
申请号：US10645665
申请日：2003-08-22
申请人： Raj Dhindsa , S. M. Reza Sadjadi , Felix Kozakevich , Dave Trussell , Lumin Li , Eric Lenz , Camelia Rusu , Mukund Srinivasan , Aaron Eppler , Jim Tietz , Jeffrey Marks
发明人： Raj Dhindsa , S. M. Reza Sadjadi , Felix Kozakevich , Dave Trussell , Lumin Li , Eric Lenz , Camelia Rusu , Mukund Srinivasan , Aaron Eppler , Jim Tietz , Jeffrey Marks
IPC分类号： H01J7/24 , C23F1/00 , C23C16/00
CPC分类号： H01J37/32174 , H01J37/32082 , H01J37/32165
摘要： A workpiece is processed with a plasma in a vacuum plasma processing chamber by exciting the plasma at several frequencies such that the excitation of the plasma by the several frequencies simultaneously causes several different phenomena to occur in the plasma. The chamber includes central top and bottom electrodes and a peripheral top and/or bottom electrode arrangement that is either powered by RF or is connected to a reference potential by a filter arrangement that passes at least one of the plasma excitation frequencies to the exclusion of other frequencies.
摘要翻译：通过以几个频率激发等离子体，在真空等离子体处理室中用等离子体处理工件，使得等离子体被几个频率激发同时导致在等离子体中发生几种不同的现象。该腔室包括中央顶部和底部电极以及由RF供电的外围顶部和/或底部电极装置，或通过将至少一个等离子体激发频率传递至排除另一个等离子体激发频率的滤波器装置连接到参考电位频率

2. 发明申请

US20050039682A1 Multiple frequency plasma etch reactor 有权
标题翻译：多频等离子体蚀刻反应器
公开(公告)号：US20050039682A1
公开(公告)日：2005-02-24
申请号：US10645665
申请日：2003-08-22
申请人： Raj Dhindsa , S.M. Sadjadi , Felix Kozakevich , Dave Trussell , Lumin Li , Eric Lenz , Camelia Rusu , Mukund Srinivasan , Aaron Eppler , Jim Tietz , Jeffrey Marks
发明人： Raj Dhindsa , S.M. Sadjadi , Felix Kozakevich , Dave Trussell , Lumin Li , Eric Lenz , Camelia Rusu , Mukund Srinivasan , Aaron Eppler , Jim Tietz , Jeffrey Marks
IPC分类号： H01J37/32 , C23C16/00 , H05H1/24
CPC分类号： H01J37/32174 , H01J37/32082 , H01J37/32165
摘要： A workpiece is processed with a plasma in a vacuum plasma processing chamber by exciting the plasma at several frequencies such that the excitation of the plasma by the several frequencies simultaneously causes several different phenomena to occur in the plasma. The chamber includes central top and bottom electrodes and a peripheral top and/or bottom electrode arrangement that is either powered by RF or is connected to a reference potential by a filter arrangement that passes at least one of the plasma excitation frequencies to the exclusion of other frequencies.
摘要翻译：通过以几个频率激发等离子体，在真空等离子体处理室中用等离子体处理工件，使得等离子体被几个频率激发同时导致在等离子体中发生几种不同的现象。该腔室包括中央顶部和底部电极以及由RF供电的外围顶部和/或底部电极装置，或通过将至少一个等离子体激发频率传递至排除另一个等离子体激发频率的滤波器装置连接到参考电位频率

3. 发明授权

US08674255B1 Apparatus and method for controlling etch uniformity 有权
标题翻译：用于控制蚀刻均匀性的装置和方法
公开(公告)号：US08674255B1
公开(公告)日：2014-03-18
申请号：US11298804
申请日：2005-12-08
申请人： Eric Lenz , Raj Dhindsa , Dave Trussell , Lumin Li
发明人： Eric Lenz , Raj Dhindsa , Dave Trussell , Lumin Li
IPC分类号： H01J7/24 , B23K9/00
CPC分类号： B23K10/003 , B23K10/006 , B23K2101/40 , H01J37/32091 , H01J37/32183 , H01J37/32642
摘要： A plasma processing system is provided. The plasma processing system includes a radio frequency (RF) power generator configured to have a tunable frequency power output, the frequency output being adjustable within a range. A processing chamber having a bottom electrode and a top electrode is included. A plasma region being defined between the bottom and top electrodes and the processing chamber receives RF power from the RF power generator. A match network is coupled between the RF power generator and the processing chamber. The match network has a first tunable element and a second tunable element. The first tunable element adjusts a split between a first grounding pathway defined within an inner region of the plasma region and a second grounding pathway defined within an outer region of the plasma region. The second tunable element adjusts a load delivered to the processing chamber from the power generator.
摘要翻译：提供等离子体处理系统。等离子体处理系统包括被配置为具有可调频率功率输出的射频（RF）功率发生器，该频率输出可在一个范围内调节。包括具有底部电极和顶部电极的处理室。定义在底部和顶部电极之间的等离子体区域，并且处理室从RF发生器接收RF功率。匹配网络耦合在RF发电机和处理室之间。匹配网络具有第一可调元素和第二可调元素。第一可调谐元件调节限定在等离子体区域的内部区域内的第一接地路径和限定在等离子体区域的外部区域内的第二接地路径之间的分裂。第二可调元件调节从发电机输送到处理室的负载。

4. 发明授权

US08299390B2 Apparatus and method for controlling plasma density profile 有权
标题翻译：用于控制等离子体密度分布的装置和方法
公开(公告)号：US08299390B2
公开(公告)日：2012-10-30
申请号：US12697057
申请日：2010-01-29
申请人： Rajinder Dhindsa , Felix Kozakevich , Lumin Li , Dave Trussell
发明人： Rajinder Dhindsa , Felix Kozakevich , Lumin Li , Dave Trussell
IPC分类号： B23K10/00
CPC分类号： H01J37/32082 , H01J37/32174
摘要： A number of RF power transmission paths are defined to extend from an RF power source through a matching network, through a transmit electrode, through a plasma to a number of return electrodes. A number of tuning elements are respectively disposed within the number of RF power transmission paths. Each tuning element is defined to adjust an amount of RF power to be transmitted through the RF power transmission path within which the tuning element is disposed. A plasma density within a vicinity of a particular RF power transmission path is directly proportional to the amount of RF power transmitted through the particular RF power transmission path. Therefore, adjustment of RF power transmitted through the RF power transmission paths, as afforded by the tuning element, enables control of a plasma density profile across a substrate.
摘要翻译：多个RF功率传输路径被定义为从RF电源通过匹配网络，通过发射电极，等离子体延伸到多个返回电极。多个调谐元件分别设置在RF功率传输路径的数量内。每个调谐元件被定义为调整要通过设置调谐元件的RF功率传输路径传输的RF功率的量。特定RF功率传输路径附近的等离子体密度与通过特定RF功率传输路径传输的RF功率的量成正比。因此，由调谐元件提供的通过RF功率传输路径传输的RF功率的调整能够控制跨越衬底的等离子体密度分布。

5. 发明申请

US20100126847A1 Apparatus and Method for Controlling Plasma Density Profile 有权
标题翻译：用于控制等离子体密度分布的装置和方法
公开(公告)号：US20100126847A1
公开(公告)日：2010-05-27
申请号：US12697057
申请日：2010-01-29
申请人： Rajinder Dhindsa , Felix Kozakevich , Lumin Li , Dave Trussell
发明人： Rajinder Dhindsa , Felix Kozakevich , Lumin Li , Dave Trussell
IPC分类号： H05H1/00
CPC分类号： H01J37/32082 , H01J37/32174
摘要： A number of RF power transmission paths are defined to extend from an RF power source through a matching network, through a transmit electrode, through a plasma to a number of return electrodes. A number of tuning elements are respectively disposed within the number of RF power transmission paths. Each tuning element is defined to adjust an amount of RF power to be transmitted through the RF power transmission path within which the tuning element is disposed. A plasma density within a vicinity of a particular RF power transmission path is directly proportional to the amount of RF power transmitted through the particular RF power transmission path. Therefore, adjustment of RF power transmitted through the RF power transmission paths, as afforded by the tuning element, enables control of a plasma density profile across a substrate.
摘要翻译：多个RF功率传输路径被定义为从RF电源通过匹配网络，通过发射电极，等离子体延伸到多个返回电极。多个调谐元件分别设置在RF功率传输路径的数量内。每个调谐元件被定义为调整要通过设置调谐元件的RF功率传输路径传输的RF功率的量。特定RF功率传输路径附近的等离子体密度与通过特定RF功率传输路径传输的RF功率的量成正比。因此，由调谐元件提供的通过RF功率传输路径传输的RF功率的调整能够控制跨越衬底的等离子体密度分布。

6. 发明申请

US20070141729A1 Apparatus and method for controlling plasma density profile 有权
标题翻译：用于控制等离子体密度分布的装置和方法
公开(公告)号：US20070141729A1
公开(公告)日：2007-06-21
申请号：US11303729
申请日：2005-12-16
申请人： Rajinder Dhindsa , Felix Kozakevich , Lumin Li , Dave Trussell
发明人： Rajinder Dhindsa , Felix Kozakevich , Lumin Li , Dave Trussell
IPC分类号： H01L21/00 , C23F1/00 , H01L21/302 , G01L21/30
CPC分类号： H01J37/32082 , H01J37/32174
摘要： A number of RF power transmission paths are defined to extend from an RF power source through a matching network, through a transmit electrode, through a plasma to a number of return electrodes. A number of tuning elements are respectively disposed within the number of RF power transmission paths. Each tuning element is defined to adjust an amount of RF power to be transmitted through the RF power transmission path within which the tuning element is disposed. A plasma density within a vicinity of a particular RF power transmission path is directly proportional to the amount of RF power transmitted through the particular RF power transmission path. Therefore, adjustment of RF power transmitted through the RF power transmission paths, as afforded by the tuning element, enables control of a plasma density profile across a substrate.
摘要翻译：多个RF功率传输路径被定义为从RF电源通过匹配网络，通过发射电极，等离子体延伸到多个返回电极。多个调谐元件分别设置在RF功率传输路径的数量内。每个调谐元件被定义为调整要通过设置调谐元件的RF功率传输路径传输的RF功率的量。特定RF功率传输路径附近的等离子体密度与通过特定RF功率传输路径传输的RF功率的量成正比。因此，由调谐元件提供的通过RF功率传输路径传输的RF功率的调整能够控制跨越衬底的等离子体密度分布。

7. 发明授权

US07683289B2 Apparatus and method for controlling plasma density profile 有权
标题翻译：用于控制等离子体密度分布的装置和方法
公开(公告)号：US07683289B2
公开(公告)日：2010-03-23
申请号：US11303729
申请日：2005-12-16
申请人： Rajinder Dhindsa , Felix Kozakevich , Lumin Li , Dave Trussell
发明人： Rajinder Dhindsa , Felix Kozakevich , Lumin Li , Dave Trussell
IPC分类号： B23K10/00 , C23C16/00 , H01L21/306
CPC分类号： H01J37/32082 , H01J37/32174
摘要： A number of RF power transmission paths are defined to extend from an RF power source through a matching network, through a transmit electrode, through a plasma to a number of return electrodes. A number of tuning elements are respectively disposed within the number of RF power transmission paths. Each tuning element is defined to adjust an amount of RF power to be transmitted through the RF power transmission path within which the tuning element is disposed. A plasma density within a vicinity of a particular RF power transmission path is directly proportional to the amount of RF power transmitted through the particular RF power transmission path. Therefore, adjustment of RF power transmitted through the RF power transmission paths, as afforded by the tuning element, enables control of a plasma density profile across a substrate.
摘要翻译：多个RF功率传输路径被定义为从RF电源通过匹配网络，通过发射电极，等离子体延伸到多个返回电极。多个调谐元件分别设置在RF功率传输路径的数量内。每个调谐元件被定义为调整要通过设置调谐元件的RF功率传输路径传输的RF功率的量。特定RF功率传输路径附近的等离子体密度与通过特定RF功率传输路径传输的RF功率的量成正比。因此，由调谐元件提供的通过RF功率传输路径传输的RF功率的调整能够控制跨越衬底的等离子体密度分布。

8. 发明申请

US20050264218A1 Plasma processor with electrode responsive to multiple RF frequencies 有权
标题翻译：等离子体处理器，电极响应多个RF频率
公开(公告)号：US20050264218A1
公开(公告)日：2005-12-01
申请号：US10855706
申请日：2004-05-28
申请人： Rajinder Dhindsa , Felix Kozakevich , Dave Trussell
发明人： Rajinder Dhindsa , Felix Kozakevich , Dave Trussell
IPC分类号： H01J37/32 , H01J7/24
CPC分类号： H01J37/32174 , H01J37/32082 , H01J37/32165 , H01J37/3299
摘要： A plasma processor processing a workpiece includes sources having frequencies 2 MHz, 27 MHz, and 60 MHz, applied by three matching networks to an electrode in a vacuum chamber including the workpiece. Alternatively 60 MHz is applied to a second electrode by a fourth matching network. The matching networks, substantially tuned to the frequencies of the sources driving them, include series inductances so the 2 MHz inductance exceeds the 27 MHz network inductance, and the 27 MHz network inductance exceeds the inductances of the 60 MHz networks. The matching networks attenuate by at least 26 DB the frequencies of the sources that do not drive them. Shunt inductors between the 27 and 60 MHz sources decouple 2 MHz from the 27 and 60 MHz sources. A series resonant circuit (resonant to about 5 MHz) shunts the 2 MHz network and the electrode to help match the 2 MHz source to the electrode.
摘要翻译：处理工件的等离子体处理器包括频率为2MHz，27MHz和60MHz的源，由三个匹配网络施加到包括工件的真空室中的电极。或者通过第四匹配网络将60MHz施加到第二电极。基本上调谐到驱动它们的源的频率的匹配网络包括串联电感，因此2MHz电感超过27MHz网络电感，并且27MHz网络电感超过60MHz网络的电感。匹配网络衰减至少26 DB的驱动它们的源的频率。 27和60 MHz信号源之间的并联电感将2 MHz与27 MHz和60 MHz信号源分离。串联谐振电路（谐振到约5 MHz）分流2 MHz网络和电极，以帮助将2 MHz源极与电极相匹配。

9. 发明申请

US20050264219A1 Vacuum plasma processor including control in response to DC bias voltage 有权
标题翻译：真空等离子体处理器包括响应于直流偏置电压的控制
公开(公告)号：US20050264219A1
公开(公告)日：2005-12-01
申请号：US10855707
申请日：2004-05-28
申请人： Rajinder Dhindsa , Felix Kozakevich , Dave Trussell
发明人： Rajinder Dhindsa , Felix Kozakevich , Dave Trussell
IPC分类号： H01J37/32 , H01J7/24
CPC分类号： H01J37/32174 , H01J37/32091 , H01J37/32165 , H01J37/32935 , H01J37/3299
摘要： A plasma processor chamber includes a bottom electrode and a top electrode assembly having a center electrode surrounded by a grounded electrode. RF excited plasma between the electrodes induces a DC bias on them. A measure of the bottom electrode DC bias controls the capacitance of a first series resonant circuit connected between the center electrode and ground. A measure of the center electrode DC bias controls the capacitance of a second series resonant circuit connected between the bottom electrode and ground.
摘要翻译：等离子体处理器室包括底电极和顶电极组件，其具有被接地电极包围的中心电极。电极之间的RF激发等离子体在其上引起DC偏压。底部电极直流偏置的测量控制连接在中心电极和地之间的第一串联谐振电路的电容。中心电极直流偏压的测量控制连接在底电极和地之间的第二串联谐振电路的电容。

10. 发明授权

US07276135B2 Vacuum plasma processor including control in response to DC bias voltage 有权
标题翻译：真空等离子体处理器包括响应于直流偏置电压的控制
公开(公告)号：US07276135B2
公开(公告)日：2007-10-02
申请号：US10855707
申请日：2004-05-28
申请人： Rajinder Dhindsa , Felix Kozakevich , Dave Trussell
发明人： Rajinder Dhindsa , Felix Kozakevich , Dave Trussell
IPC分类号： C23F1/00
CPC分类号： H01J37/32174 , H01J37/32091 , H01J37/32165 , H01J37/32935 , H01J37/3299
摘要： A plasma processor chamber includes a bottom electrode and a top electrode assembly having a center electrode surrounded by a grounded electrode. RF excited plasma between the electrodes induces a DC bias on them. A measure of the bottom electrode DC bias controls the capacitance of a first series resonant circuit connected between the center electrode and ground. A measure of the center electrode DC bias controls the capacitance of a second series resonant circuit connected between the bottom electrode and ground.
摘要翻译：等离子体处理器室包括底电极和顶电极组件，其具有被接地电极包围的中心电极。电极之间的RF激发等离子体在其上引起DC偏压。底部电极直流偏置的测量控制连接在中心电极和地之间的第一串联谐振电路的电容。中心电极直流偏压的测量控制连接在底电极和地之间的第二串联谐振电路的电容。

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