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1. 发明授权

US06174810B1 Copper interconnect structure and method of formation 失效
标题翻译：铜互连结构和形成方法
公开(公告)号：US06174810B1
公开(公告)日：2001-01-16
申请号：US09055510
申请日：1998-04-06
申请人： Rabiul Islam , Avgerinos V. Gelatos , Kevin Lucas , Stanley M. Filipiak , Ramnath Venkatraman
发明人： Rabiul Islam , Avgerinos V. Gelatos , Kevin Lucas , Stanley M. Filipiak , Ramnath Venkatraman
IPC分类号： H01L2144
CPC分类号： H01L21/76808 , H01L21/76801 , H01L21/76832 , H01L21/76834 , H01L21/76838
摘要： In one embodiment, a copper interconnect structure is formed by depositing a dielectric layer (28) on a semiconductor substrate (10). The dielectric layer (28) is then patterned to form interconnect openings (29). A layer of copper (34) is then formed within the interconnect openings (29). A portion of the copper layer (34) is then removed to form copper interconnects (39) within the interconnect openings (29). A copper barrier layer (40) is then formed overlying the copper interconnects (39). Adhesion between the copper barrier layer (40) and the copper interconnects (39) is improved by exposing the exposed surface of the copper interconnects (39) to a plasma generated using only ammonia as a source gas.
摘要翻译：在一个实施例中，通过在半导体衬底（10）上沉积介电层（28）来形成铜互连结构。然后将电介质层（28）图案化以形成互连开口（29）。然后在互连开口（29）内形成一层铜（34）。然后去除铜层（34）的一部分以在互连开口（29）内形成铜互连（39）。然后在铜互连（39）上形成铜阻挡层（40）。通过将铜互连（39）的暴露表面暴露于仅使用氨作为源气体产生的等离子体，可以改善铜阻挡层（40）和铜互连（39）之间的粘合性。

2. 发明授权

US08211799B2 Atomic layer deposition of tungsten materials 有权
标题翻译：原子层沉积钨材料
公开(公告)号：US08211799B2
公开(公告)日：2012-07-03
申请号：US13160378
申请日：2011-06-14
申请人： Amit Khandelwal , Madhu Moorthy , Avgerinos V. Gelatos , Kai Wu
发明人： Amit Khandelwal , Madhu Moorthy , Avgerinos V. Gelatos , Kai Wu
IPC分类号： H01L21/44
CPC分类号： C23C16/0281 , C23C16/08 , C23C16/14 , C23C16/45525 , H01L21/28556 , H01L21/28562 , H01L21/76843 , H01L21/76855 , H01L21/76856 , H01L21/7687 , H01L21/76876 , H01L21/76877 , H01L2221/1089
摘要： Embodiments of the invention provide a method for depositing tungsten-containing materials. In one embodiment, a method includes forming a tungsten nucleation layer over an underlayer disposed on the substrate while sequentially providing a tungsten precursor and a reducing gas into a process chamber during an atomic layer deposition (ALD) process and depositing a tungsten bulk layer over the tungsten nucleation layer, wherein the reducing gas contains hydrogen gas and a hydride compound (e.g., diborane) and has a hydrogen/hydride flow rate ratio of about 500:1 or greater. In some examples, the method includes flowing the hydrogen gas into the process chamber at a flow rate within a range from about 1 slm to about 20 slm and flowing a mixture of the hydride compound and a carrier gas into the process chamber at a flow rate within a range from about 50 sccm to about 500 sccm.
摘要翻译：本发明的实施方案提供了一种沉积含钨材料的方法。在一个实施例中，一种方法包括在设置在衬底上的底层上形成钨成核层，同时在原子层沉积（ALD）工艺期间依次提供钨前体和还原气体到处理室中，并在其上沉积钨体积层钨成核层，其中所述还原气体包含氢气和氢化物化合物（例如乙硼烷），并且具有约500:1或更高的氢/氢化物流速比。在一些实例中，该方法包括以约1slm至约20slm的流速将氢气流入处理室，并将氢化物化合物和载气的混合物以流速流动到处理室中在约50sccm至约500sccm的范围内。

3. 发明授权

US08123860B2 Apparatus for cyclical depositing of thin films 失效
标题翻译：用于循环沉积薄膜的装置
公开(公告)号：US08123860B2
公开(公告)日：2012-02-28
申请号：US12261487
申请日：2008-10-30
申请人： Randhir P. S. Thakur , Alfred W. Mak , Ming Xi , Walter Benjamin Glenn , Ahmad A. Khan , Ayad A. Al-Shaikh , Avgerinos V. Gelatos , Salvador P. Umotoy
发明人： Randhir P. S. Thakur , Alfred W. Mak , Ming Xi , Walter Benjamin Glenn , Ahmad A. Khan , Ayad A. Al-Shaikh , Avgerinos V. Gelatos , Salvador P. Umotoy
IPC分类号： C23C16/455 , C23C16/52 , C23F1/00 , H01L21/306 , C23C16/06 , C23C16/22
CPC分类号： C23C16/45544 , C23C16/4412 , C23C16/452 , C23C16/45536 , C23C16/45565 , C23C16/45582 , H01J37/32009 , H01J37/32091 , H01J37/3244 , H01J37/32834 , H01L21/6719
摘要： An apparatus for cyclical depositing of thin films on semiconductor substrates, comprising a process chamber having a gas distribution system with separate paths for process gases and an exhaust system synchronized with operation of valves dosing the process gases into a reaction region of the chamber.
摘要翻译：一种用于在半导体衬底上循环沉积薄膜的装置，包括具有气体分配系统的处理室，该气体分配系统具有用于处理气体的独立路径，以及与将所述工艺气体计量到所述室的反应区域的阀的操作同步的排气系统。

4. 发明授权

US07745333B2 Methods for depositing tungsten layers employing atomic layer deposition techniques 有权
标题翻译：使用原子层沉积技术沉积钨层的方法
公开(公告)号：US07745333B2
公开(公告)日：2010-06-29
申请号：US12179002
申请日：2008-07-24
申请人： Ken Kaung Lai , Ravi Rajagopalan , Amit Khandelwal , Madhu Moorthy , Srinivas Gandikota , Joseph Castro , Avgerinos V. Gelatos , Cheryl Knepfler , Ping Jian , Hongbin Fang , Chao-Ming Huang , Ming Xi , Michael X. Yang , Hua Chung , Jeong Soo Byun
发明人： Ken Kaung Lai , Ravi Rajagopalan , Amit Khandelwal , Madhu Moorthy , Srinivas Gandikota , Joseph Castro , Avgerinos V. Gelatos , Cheryl Knepfler , Ping Jian , Hongbin Fang , Chao-Ming Huang , Ming Xi , Michael X. Yang , Hua Chung , Jeong Soo Byun
IPC分类号： H01L21/44
CPC分类号： H01L21/28562 , C23C16/0281 , C23C16/08 , C23C16/14 , C23C16/45525 , H01L21/28556 , H01L21/76843 , H01L21/76855 , H01L21/76856 , H01L21/7687 , H01L21/76876 , H01L21/76877 , H01L2221/1089
摘要： In one embodiment of the invention, a method for forming a tungsten-containing layer on a substrate is provided which includes positioning a substrate containing a barrier layer disposed thereon in a process chamber, exposing the substrate to a first soak process for a first time period and depositing a nucleation layer on the barrier layer by flowing a tungsten-containing precursor and a reductant into the process chamber. The method further includes exposing the nucleation layer to a second soak process for a second time period and depositing a bulk layer on the nucleation layer. In one example, the barrier layer contains titanium nitride, the first and second soak processes independently comprise at least one reducing gas selected from the group consisting of hydrogen, silane, disilane, dichlorosilane, borane, diborane, derivatives thereof and combinations thereof and the nucleation layer may be deposited by an atomic layer deposition process or a pulsed chemical vapor deposition process while the bulk layer may be deposited by a chemical vapor deposition process or a physical vapor deposition process.
摘要翻译：在本发明的一个实施例中，提供了一种在衬底上形成含钨层的方法，其包括将包含设置在其上的阻挡层的衬底定位在处理室中，将衬底暴露于第一次浸泡过程第一时间段以及通过使含钨前体和还原剂流入所述处理室，在所述阻挡层上沉积成核层。该方法还包括将成核层暴露于第二次浸泡过程第二时间段，并将沉积层沉积在成核层上。在一个实例中，阻挡层包含氮化钛，第一和第二浸泡工艺独立地包含选自氢，硅烷，乙硅烷，二氯硅烷，硼烷，乙硼烷，其衍生物及其组合中的至少一种还原气体和成核层可以通过原子层沉积工艺或脉冲化学气相沉积工艺沉积，同时可以通过化学气相沉积工艺或物理气相沉积工艺沉积主体层。

5. 发明授权

US07691442B2 Ruthenium or cobalt as an underlayer for tungsten film deposition 有权
标题翻译：钌或钴作为钨膜沉积的底层
公开(公告)号：US07691442B2
公开(公告)日：2010-04-06
申请号：US12197049
申请日：2008-08-22
申请人： Srinivas Gandikota , Madhu Moorthy , Amit Khandelwal , Avgerinos V. Gelatos , Mei Chang , Kavita Shah , Seshadri Ganguli
发明人： Srinivas Gandikota , Madhu Moorthy , Amit Khandelwal , Avgerinos V. Gelatos , Mei Chang , Kavita Shah , Seshadri Ganguli
IPC分类号： B32B15/00 , B32B15/01 , C23C16/06
CPC分类号： H01L21/28556 , C23C16/0281 , C23C16/06 , C23C16/45525 , C23C16/45529 , H01L21/28562 , H01L21/76843 , H01L21/76846 , H01L21/76862 , H01L21/76876 , H01L21/76877 , Y10T428/12771 , Y10T428/12812 , Y10T428/12861 , Y10T428/12875
摘要： Embodiments of the invention provide a method for depositing materials on substrates. In one embodiment, the method includes depositing a barrier layer containing tantalum or titanium on a substrate, depositing a ruthenium layer or a cobalt layer on the barrier layer, and depositing a tungsten bulk layer thereover. In some examples, the barrier layer may contain tantalum nitride deposited by an atomic layer deposition (ALD) process, the tungsten bulk layer may be deposited by a chemical vapor deposition (CVD) process, and the ruthenium or cobalt layer may be deposited by an ALD process. The ruthenium or cobalt layer may be exposed to a soak compound, such as hydrogen, diborane, silane, or disilane, during a soak process prior to depositing the tungsten bulk layer. In some examples, a tungsten nucleation layer may be deposited on the ruthenium or cobalt layer, such as by ALD, prior to depositing the tungsten bulk layer.
摘要翻译：本发明的实施例提供了一种在衬底上沉积材料的方法。在一个实施例中，该方法包括在衬底上沉积含有钽或钛的阻挡层，在阻挡层上沉积钌层或钴层，并在其上沉积钨体层。在一些示例中，阻挡层可以包含通过原子层沉积（ALD）工艺沉积的氮化钽，可以通过化学气相沉积（CVD）工艺沉积钨体层，并且钌或钴层可以通过 ALD过程。在沉积钨体层之前的浸泡过程中，钌或钴层可以暴露于浸泡化合物，例如氢，乙硼烷，硅烷或乙硅烷。在一些实例中，在沉积钨体层之前，例如通过ALD，钨成核层可沉积在钌或钴层上。

6. 发明授权

US07521379B2 Deposition and densification process for titanium nitride barrier layers 失效
标题翻译：氮化钛阻挡层的沉积和致密化过程
公开(公告)号：US07521379B2
公开(公告)日：2009-04-21
申请号：US11869557
申请日：2007-10-09
申请人： Amit Khandelwal , Avgerinos V. Gelatos , Christophe Marcadal , Mei Chang
发明人： Amit Khandelwal , Avgerinos V. Gelatos , Christophe Marcadal , Mei Chang
IPC分类号： H01L21/44 , H01L21/469
CPC分类号： H01L21/28556 , H01L21/321 , H01L21/76843 , H01L21/76862
摘要： In one embodiment, a method for forming a titanium nitride barrier material on a substrate is provided which includes depositing a titanium nitride layer on the substrate by a metal-organic chemical vapor deposition (MOCVD) process, and thereafter, densifying the titanium nitride layer by exposing the substrate to a plasma process. In one example, the MOCVD process and the densifying plasma process is repeated to form a barrier stack by depositing a second titanium nitride layer on the first titanium nitride layer. In another example, a third titanium nitride layer is deposited on the second titanium nitride layer. Subsequently, the method provides depositing a conductive material on the substrate and exposing the substrate to a annealing process. In one example, each titanium nitride layer may have a thickness of about 15 Å and the titanium nitride barrier stack may have a copper diffusion potential of less than about 5×1010 atoms/cm2.
摘要翻译：在一个实施例中，提供了一种在衬底上形成氮化钛阻挡材料的方法，其包括通过金属 - 有机化学气相沉积（MOCVD）工艺在衬底上沉积氮化钛层，然后通过以下步骤致密化氮化钛层：将衬底暴露于等离子体工艺。在一个实例中，通过在第一氮化钛层上沉积第二氮化钛层来重复MOCVD工艺和致密等离子体工艺以形成势垒堆叠。在另一示例中，在第二氮化钛层上沉积第三氮化钛层。随后，该方法提供在衬底上沉积导电材料并将衬底暴露于退火过程。在一个示例中，每个氮化钛层可以具有约15埃的厚度，并且氮化钛阻挡层可以具有小于约5×10 10原子/ cm 2的铜扩散电位。

7. 发明授权

US5324690A Semiconductor device having a ternary boron nitride film and a method for forming the same 失效
标题翻译：具有三元氮化硼膜的半导体器件及其形成方法
公开(公告)号：US5324690A
公开(公告)日：1994-06-28
申请号：US11919
申请日：1993-02-01
申请人： Avgerinos V. Gelatos , Stephen S. Poon
发明人： Avgerinos V. Gelatos , Stephen S. Poon
IPC分类号： B24B37/04 , C23C16/34 , H01L21/3105 , H01L21/314 , H01L21/318 , H01L23/532 , H01L21/304
CPC分类号： B24B37/042 , C23C16/342 , H01L21/31053 , H01L21/3144 , H01L21/318 , H01L23/5329 , H01L2924/0002 , Y10S148/113 , Y10S438/97
摘要： A non-silyated, ternary boron nitride film (18, 38) is provided for semiconductor device applications. The non-silyated, ternary boron nitride film is preferably formed by plasma-enhanced chemical vapor deposition using non-silyated compounds of boron, nitrogen, and either oxygen, germanium, germanium oxide, fluorine, or carbon. In one embodiment, boron oxynitride (BNO) is deposited in a plasma-enhanced chemical vapor deposition reactor using ammonia (NH.sub.3), diborane (B.sub.2 H.sub.6), and nitrous oxide (N.sub.2 O). The BNO film has a dielectric constant of about 3.3 and exhibits a negligible removal rate in a commercial polishing apparatus. Because of its low dielectric constant and high hardness, the ternary boron nitride film formed in accordance with the invention can be advantageously used as a polish-stop layer and as a interlevel dielectric layer in a semiconductor device.
摘要翻译：为半导体器件应用提供了不含硅酸盐的三元氮化硼膜（18,38）。非硅化三元氮化硼膜优选通过使用硼，氮和氧，锗，氧化锗，氟或碳的非硅化化合物的等离子体增强化学气相沉积来形成。在一个实施方案中，使用氨（NH 3），乙硼烷（B 2 H 6）和一氧化二氮（N 2 O）在等离子体增强化学气相沉积反应器中沉积氮氧化硼（BNO）。 BNO膜的介电常数约为3.3，在商业抛光装置中的去除率可忽略不计。由于其低介电常数和高硬度，根据本发明形成的三元氮化硼膜可以有利地用作半导体器件中的抛光停止层和层间电介质层。

8. 发明申请

US20120244699A1 ATOMIC LAYER DEPOSITION OF TUNGSTEN MATERIALS 有权
标题翻译：原子层沉积材料
公开(公告)号：US20120244699A1
公开(公告)日：2012-09-27
申请号：US13491191
申请日：2012-06-07
申请人： AMIT KHANDELWAL , Madhu Moorthy , Avgerinos V. Gelatos , Kai Wu
发明人： AMIT KHANDELWAL , Madhu Moorthy , Avgerinos V. Gelatos , Kai Wu
IPC分类号： H01L21/285
CPC分类号： C23C16/0281 , C23C16/08 , C23C16/14 , C23C16/45525 , H01L21/28556 , H01L21/28562 , H01L21/76843 , H01L21/76855 , H01L21/76856 , H01L21/7687 , H01L21/76876 , H01L21/76877 , H01L2221/1089
摘要： Embodiments of the invention provide a method for depositing tungsten-containing materials. In one embodiment, a method includes forming a tungsten nucleation layer over an underlayer disposed on the substrate while sequentially providing a tungsten precursor and a reducing gas into a process chamber during an atomic layer deposition (ALD) process and depositing a tungsten bulk layer over the tungsten nucleation layer, wherein the reducing gas contains hydrogen gas and a hydride compound (e.g., diborane) and has a hydrogen/hydride flow rate ratio of about 500:1 or greater. In some examples, the method includes flowing the hydrogen gas into the process chamber at a flow rate within a range from about 1 slm to about 20 slm and flowing a mixture of the hydride compound and a carrier gas into the process chamber at a flow rate within a range from about 50 sccm to about 500 sccm.
摘要翻译：本发明的实施方案提供了一种沉积含钨材料的方法。在一个实施例中，一种方法包括在设置在衬底上的底层上形成钨成核层，同时在原子层沉积（ALD）工艺期间依次提供钨前体和还原气体到处理室中，并在其上沉积钨体积层钨成核层，其中所述还原气体包含氢气和氢化物化合物（例如乙硼烷），并且具有约500:1或更高的氢/氢化物流速比。在一些实例中，该方法包括以约1slm至约20slm的流速将氢气流入处理室，并将氢化物化合物和载气的混合物以流速流动到处理室中在约50sccm至约500sccm的范围内。

9. 发明授权

US07838441B2 Deposition and densification process for titanium nitride barrier layers 失效
标题翻译：氮化钛阻挡层的沉积和致密化过程
公开(公告)号：US07838441B2
公开(公告)日：2010-11-23
申请号：US12426815
申请日：2009-04-20
申请人： Amit Khandelwal , Avgerinos V. Gelatos , Christophe Marcadal , Mei Chang
发明人： Amit Khandelwal , Avgerinos V. Gelatos , Christophe Marcadal , Mei Chang
IPC分类号： H01L21/768
CPC分类号： H01L21/28556 , H01L21/321 , H01L21/76843 , H01L21/76862
摘要： In one embodiment, a method for forming a titanium nitride barrier material on a substrate is provided which includes depositing a titanium nitride layer on the substrate by a metal-organic chemical vapor deposition (MOCVD) process, and thereafter, densifying the titanium nitride layer by exposing the substrate to a plasma process. In one example, the MOCVD process and the densifying plasma process is repeated to form a barrier stack by depositing a second titanium nitride layer on the first titanium nitride layer. In another example, a third titanium nitride layer is deposited on the second titanium nitride layer. Subsequently, the method provides depositing a conductive material on the substrate and exposing the substrate to a annealing process. In one example, each titanium nitride layer may have a thickness of about 15 Å and the titanium nitride barrier stack may have a copper diffusion potential of less than about 5×1010 atoms/cm2.
摘要翻译：在一个实施例中，提供了一种在衬底上形成氮化钛阻挡材料的方法，其包括通过金属 - 有机化学气相沉积（MOCVD）工艺在衬底上沉积氮化钛层，然后通过以下步骤致密化氮化钛层：将衬底暴露于等离子体工艺。在一个实例中，通过在第一氮化钛层上沉积第二氮化钛层来重复MOCVD工艺和致密等离子体工艺以形成势垒堆叠。在另一示例中，在第二氮化钛层上沉积第三氮化钛层。随后，该方法提供在衬底上沉积导电材料并将衬底暴露于退火过程。在一个示例中，每个氮化钛层可以具有约15埃的厚度，氮化钛阻挡层可以具有小于约5×10 10原子/ cm 2的铜扩散电位。

10. 发明授权

US5391517A Process for forming copper interconnect structure 失效
标题翻译：形成铜互连结构的工艺
公开(公告)号：US5391517A
公开(公告)日：1995-02-21
申请号：US120097
申请日：1993-09-13
申请人： Avgerinos V. Gelatos , Robert W. Fiordalice
发明人： Avgerinos V. Gelatos , Robert W. Fiordalice
IPC分类号： H01L21/3205 , H01L21/768 , H01L23/522 , H01L23/532 , H01L21/44
CPC分类号： H01L23/5226 , H01L21/32051 , H01L21/76838 , H01L23/53238 , H01L2924/0002
摘要： A copper metallization structure and process for the formation of electrical interconnections fabricated with pure copper metal is provided. The metallization structure includes an interface layer (22) intermediate to a dielectric layer (12), and a copper interconnect (30). The interface layer (22) functions to adhere the copper interconnect (30) to a device substrate (10) and to prevent the diffusion of copper into underlying dielectric layers. The interconnect layer (22) is fabricated by depositing a first titanium layer (16) followed by the sequential deposition of a titanium nitride layer (18), and a second titanium layer (20). A copper layer (24) is deposited to overlie the second titanium layer (20) and an annealing step is carried out to form a copper-titanium intermetallic layer (26). The titanium nitride layer (18) functions as a diffusion barrier preventing the diffusion of copper into the underlying dielectric layer (12), and the copper titanium intermetallic layer (26) provides an adhesive material, which adheres the copper layer (24) to the device substrate ( 10). Following the formation of the intermetallic layer (26), the device surface is planarized to form a planar surface (28), and to form an inlaid copper interconnect (30).
摘要翻译：提供了一种用于形成用纯铜金属制造的电互连的铜金属化结构和工艺。金属化结构包括介于介电层（12）中间的界面层（22）和铜互连（30）。界面层（22）用于将铜互连（30）粘附到器件衬底（10）并防止铜扩散到下面的介电层中。通过沉积第一钛层（16）然后顺序沉积氮化钛层（18）和第二钛层（20）来制造互连层（22）。沉积铜层（24）以覆盖第二钛层（20），并执行退火步骤以形成铜 - 钛金属间层（26）。氮化钛层（18）作为阻止铜扩散到下面的电介质层（12）中的扩散阻挡层而起作用，铜钛金属间化合物层（26）提供将铜层（24）粘合到器件衬底（10）。在形成金属间层（26）之后，将器件表面平坦化以形成平坦表面（28），并形成镶嵌铜互连（30）。

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