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    • 5. 发明授权
    • Methods for sensing memory elements in semiconductor devices
    • 用于感测半导体器件中的存储元件的方法
    • US08582375B2
    • 2013-11-12
    • US13486535
    • 2012-06-01
    • R. Jacob Baker
    • R. Jacob Baker
    • G11C7/22
    • G11C7/22G11C5/147G11C7/065G11C7/16G11C8/08G11C11/5642G11C11/5678G11C13/0004G11C2211/5634G11C2211/5644H03M3/43H03M3/456
    • A memory device that, in certain embodiments, includes a plurality of memory elements connected to a bit-line and a delta-sigma modulator with a digital output and an analog input, which may be connected to the bit-line. In some embodiments, the delta-sigma modulator includes a circuit with first and second inputs and an output. The circuit is configured to combine (add or subtract) input signals. The first input may be connected to the analog input. The delta-sigma modulator may also include an integrator connected to the output of the circuit, an analog-to-digital converter with an input connected to an output of the integrator and an output connected to the digital output, and a digital-to-analog converter with an input connected to the output of the analog-to-digital converter and an output connected to the second input of the circuit.
    • 在某些实施例中,存储器件包括连接到位线的多个存储器元件和可以连接到位线的具有数字输出和模拟输入的Δ-Σ调制器。 在一些实施例中,Δ-Σ调制器包括具有第一和第二输入和输出的电路。 该电路被配置为组合(加或减)输入信号。 第一个输入可以连接到模拟输入。 Δ-Σ调制器还可以包括连接到电路的输出的积分器,具有连接到积分器的输出的输入和连接到数字输出的输出的模数转换器,以及数模转换器, 模拟转换器,其输入连接到模数转换器的输出端,输出端连接到电路的第二输入端。
    • 9. 发明申请
    • INCREASED DRAM-ARRAY THROUGHPUT USING INACTIVE BITLINES
    • 通过使用不活泼的BITLINES来增加DRAM-ARRAY
    • US20110261637A1
    • 2011-10-27
    • US13082785
    • 2011-04-08
    • Qawi I. HarvardRobert J. DrostR. Jacob Baker
    • Qawi I. HarvardRobert J. DrostR. Jacob Baker
    • G11C7/06
    • G11C11/4091G11C7/1048G11C11/4096G11C2207/002
    • A memory device with increased communication bandwidth is described. In this memory device, control logic routes data signals from a memory array using inactive bitlines in response to a read command. These data signals are then placed on an adjacent unused input/output (I/O) line or routing channel, as opposed to a proximate I/O line that is in use. For example, unused bitlines located on the top and bottom of the memory array may be used to route data signals to adjacent local I/O lines. In particular, the data signals can be placed on unused local I/O lines which are associated with adjacent bitline sense amplifiers. The resulting increased communication bandwidth can overcome the constraints imposed by the limited number of local I/O lines in the memory device without appreciably increasing the chip size, power consumption, or cost.
    • 描述了具有增加的通信带宽的存储器件。 在该存储器件中,控制逻辑响应于读取命令,使用不活动位线从存储器阵列路由数据信号。 然后将这些数据信号放置在相邻的未使用的输入/输出(I / O)线路或路由通道上,而不是正在使用的近似I / O线。 例如,位于存储器阵列的顶部和底部的未使用的位线可以用于将数据信号路由到相邻的本地I / O线路。 特别地,数据信号可以放置在与相邻位线读出放大器相关联的未使用的本地I / O线上。 所产生的增加的通信带宽可以克服由有限数量的本地I / O线在存储器件中施加的约束,而不会明显增加芯片尺寸,功耗或成本。