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1. 发明授权

US06630024B2 Method for the production of an epitaxially grown semiconductor wafer 失效
标题翻译：用于生产外延生长的半导体晶片的方法
公开(公告)号：US06630024B2
公开(公告)日：2003-10-07
申请号：US09864994
申请日：2001-05-24
申请人： Rüdiger Schmolke , Reinhard Schauer , Günther Obermeier , Dieter Gräf , Peter Storck , Klaus Messmann , Wolfgang Siebert
发明人： Rüdiger Schmolke , Reinhard Schauer , Günther Obermeier , Dieter Gräf , Peter Storck , Klaus Messmann , Wolfgang Siebert
IPC分类号： C30B2500
CPC分类号： C30B29/06 , C30B25/02
摘要： A method for the production of a semiconductor wafer having a front and a back and an epitaxial layer of semiconductor material deposited on the front, includes the following process steps: (a) preparing a substrate wafer having a polished front and a specific thickness; (b) pretreating the front of the substrate wafer in the presence of HCl gas and a silane source at a temperature of from 950 to 1250 degrees Celsius in an epitaxy reactor, the thickness of the substrate wafer remaining substantially unchanged; and (c) depositing the epitaxial layer on the front of the pretreated substrate wafer.
摘要翻译：一种用于制造半导体晶片的方法，该半导体晶片具有沉积在其前面的半导体材料的前表面和外延层，包括以下工艺步骤：（a）制备具有抛光的正面和特定厚度的衬底晶片; b）在外延反应器中在950〜1250摄氏度的温度下，在HCl气体和硅烷源的存在下预处理基板晶片的正面，基板晶片的厚度基本保持不变; 和（c）在预处理的衬底晶片的前面沉积外延层。

2. 发明授权

US06899762B2 Epitaxially coated semiconductor wafer and process for producing it 失效
标题翻译：外延涂层半导体晶片及其制造方法
公开(公告)号：US06899762B2
公开(公告)日：2005-05-31
申请号：US10402171
申请日：2003-03-28
申请人： Guido Wenski , Wolfgang Siebert , Klaus Messmann , Gerhard Heier , Thomas Altmann , Martin Fürfanger
发明人： Guido Wenski , Wolfgang Siebert , Klaus Messmann , Gerhard Heier , Thomas Altmann , Martin Fürfanger
IPC分类号： C30B29/06 , B24B37/04 , H01L21/02 , H01L21/205 , H01L21/304 , H01L21/306 , C30B25/14
CPC分类号： B24B37/08 , B24B37/042 , H01L21/02024 , H01L21/30625 , Y10T428/24355
摘要： A semiconductor wafer with a front surface and a back surface and an epitaxial layer of semiconducting material deposited on the front surface. In the semiconductor wafer, the epitaxial layer has a maximum local flatness value SFQRmax of less than or equal to 0.13 μm and a maximum density of 0.14 scattered light centers per cm2. The front surface of the semiconductor wafer, prior to the deposition of the epitaxial layer, has a surface roughness of 0.05 to 0.29 nm RMS, measured by AFM on a 1 μm×1 μm reference area. Furthermore, there is a process for producing the semiconductor wafer. The process includes the following process steps: (a) as a single polishing step, simultaneous polishing of the front surface and of the back surface of the semiconductor wafer between rotating polishing plates while an alkaline polishing slurry is being supplied, the semiconductor wafer lying in a cutout of a carrier whose thickness is dimensioned to be 2 to 20 μm less than the thickness of the semiconductor wafer after the latter has been polished; (b) simultaneous treatment of the front surface and of the back surface of the semiconductor wafer between rotating polishing plates while a liquid containing at least one polyhydric alcohol having 2 to 6 carbon atoms is being supplied; (c) cleaning and drying of the semiconductor wafer; and (d) deposition of the epitaxial layer on the front surface of the semiconductor wafer produced in accordance with steps (a) to (c).
摘要翻译：具有前表面和后表面的半导体晶片和沉积在前表面上的半导体材料的外延层。在半导体晶片中，外延层具有小于或等于0.13μm的最大局部平坦度值SFQR＆lt; SUB＆lt;＆lt; SUB＆lt; SUB＆gt;和最大密度为0.14散射光中心/ cm 2 。在沉积外延层之前，半导体晶片的前表面在1mum×1mum参考区域上通过AFM测量的表面粗糙度为0.05至0.29nm RMS。此外，存在制造半导体晶片的工艺。该方法包括以下工艺步骤：（a）作为单个抛光步骤，在供应碱性抛光浆料的同时，在旋转的抛光板之间同时抛光半导体晶片的表面和背面，半导体晶片位于载体的切口，其尺寸设定为比后半导体晶片抛光后的半导体晶片的厚度小2〜20μm; （b）在供给包含至少一种含有2〜6个碳原子的多元醇的液体的同时处理旋转研磨板之间的半导体晶片的前表面和后表面; （c）清洗和干燥半导体晶片; 以及（d）在根据步骤（a）至（c）制造的半导体晶片的前表面上沉积外延层。

3. 发明授权

US06995077B2 Epitaxially coated semiconductor wafer and process for producing it 失效
标题翻译：外延涂层半导体晶片及其制造方法
公开(公告)号：US06995077B2
公开(公告)日：2006-02-07
申请号：US10731034
申请日：2003-12-09
申请人： Wolfgang Siebert , Peter Storck
发明人： Wolfgang Siebert , Peter Storck
IPC分类号： H01L21/20
CPC分类号： C30B29/06 , B82Y15/00 , C30B23/02 , C30B25/02 , C30B33/00 , H01L21/02381 , H01L21/0243 , H01L21/02532 , H01L21/0262 , H01L21/02658 , Y10S438/974
摘要： A semiconductor wafer with a front surface and a back surface and an epitaxial layer of semiconducting material deposited on the front surface, wherein the surface of the epitaxial layer has a maximum density of 0.14 localized light scatterers per cm2 with a cross section of greater than or equal to 0.12 μm, and the front surface of the semiconductor wafer, prior to the deposition of the epitaxial layer, has a surface roughness of 0.05 to 0.29 nm RMS, measured by AFM on a 1 μm×1 μm reference area. There is also a process for producing a semiconductor wafer with a front surface and a back surface and an epitaxial layer of semiconducting material deposited on the front surface. The process includes the following: (a) a stock removal polishing step as the only polishing step; (b) cleaning and drying of the semiconductor wafer; (c) pretreatment of the front surface of the semiconductor wafer at a temperature of from 950 to 1250 degrees Celsius in an epitaxy reactor; and (d) deposition of the epitaxial layer on the front surface of the pretreated semiconductor wafer.
摘要翻译：具有前表面和后表面的半导体晶片和沉积在前表面上的半导体材料的外延层，其中外延层的表面具有0.14cm 2的局部光散射体的最大密度，具有大于或等于0.12μm的横截面，并且在沉积外延层之前半导体晶片的前表面具有0.05μm至0.29nm RMS的表面粗糙度，通过AFM在1mumx1mum上测量参考区。还有一种制造半导体晶片的方法，该半导体晶片具有沉积在前表面上的前表面和后表面以及半导体材料的外延层。该方法包括以下步骤：（a）抛光抛光步骤作为抛光步骤; （b）清洁和干燥半导体晶片; （c）在外延反应器中在950至1250摄氏度的温度下预处理半导体晶片的前表面; 和（d）在预处理的半导体晶片的前表面上沉积外延层。

4. 发明申请

US20050103261A1 Epitaxially coated semiconductor wafer 审中-公开
标题翻译：外延涂层半导体晶圆
公开(公告)号：US20050103261A1
公开(公告)日：2005-05-19
申请号：US11020947
申请日：2004-12-23
申请人： Wilfried Von Ammon , Ruediger Schmolke , Peter Storck , Wolfgang Siebert
发明人： Wilfried Von Ammon , Ruediger Schmolke , Peter Storck , Wolfgang Siebert
IPC分类号： C23C16/44 , C30B23/02 , H01L21/205 , H01L21/22 , C30B1/00
CPC分类号： C30B23/02 , C30B29/40 , H01L21/2205 , Y10S438/913 , Y10S438/928 , Y10S438/98 , Y10T117/10
摘要： A process for epitaxially coating the front surface of a semiconductor wafer in a CVD reactor, the front surface of the semiconductor wafer being exposed to a process gas which contains a source gas and a carrier gas, and the back surface of the semiconductor wafer being exposed to a displacement gas, wherein the displacement gas contains no more than 5% by volume of hydrogen, with the result that diffusion of dopants out of the back surface of the semiconductor wafer, which is intensified by hydrogen, is substantially avoided. With this process, it is possible to produce a semiconductor wafer with a substrate resistivity of ≦100 mΩcm and a resistivity of the epitaxial layer of >1 Ωcm without back-surface coating, the epitaxial layer of which semiconductor wafer has a resistance inhomogeneity of
摘要翻译：一种用于在CVD反应器中外延涂覆半导体晶片的前表面的方法，将半导体晶片的前表面暴露于含有源气体和载气的处理气体，并且半导体晶片的背表面暴露位移气体，其中置换气体含有不超过5体积％的氢，结果是基本上避免了掺杂剂从氢的强化的半导体晶片的背表面扩散出来。通过该处理，可以制造基板电阻率<= 100mOmegacm的半导体晶片和不具有背面涂覆的>1Ω·macm的外延层的电阻率，其半导体晶片的外延层具有电阻不均匀性 <10％。

5. 发明授权

US06887775B2 Process and apparatus for epitaxially coating a semiconductor wafer and epitaxially coated semiconductor wafer 失效
标题翻译：用于外延涂覆半导体晶片和外延涂覆的半导体晶片的工艺和装置
公开(公告)号：US06887775B2
公开(公告)日：2005-05-03
申请号：US10387593
申请日：2003-03-13
申请人： Wilfried Von Ammon , Ruediger Schmolke , Peter Storck , Wolfgang Siebert
发明人： Wilfried Von Ammon , Ruediger Schmolke , Peter Storck , Wolfgang Siebert
IPC分类号： C23C16/44 , C30B23/02 , H01L21/205 , H01L21/22
CPC分类号： C30B23/02 , C30B29/40 , H01L21/2205 , Y10S438/913 , Y10S438/928 , Y10S438/98 , Y10T117/10
摘要： A process for epitaxially coating the front surface of a semiconductor wafer in a CVD reactor, the front surface of the semiconductor wafer being exposed to a process gas which contains a source gas and a carrier gas, and the back surface of the semiconductor wafer being exposed to a displacement gas, wherein the displacement gas contains no more than 5% by volume of hydrogen, with the result that diffusion of dopants out of the back surface of the semiconductor wafer, which is intensified by hydrogen, is substantially avoided. With this process, it is possible to produce a semiconductor wafer with a substrate resistivity of ≦100 mΩcm and a resistivity of the epitaxial layer of >1 Ωcm without back-surface coating, the epitaxial layer of which semiconductor wafer has a resistance inhomogeneity of
摘要翻译：一种用于在CVD反应器中外延涂覆半导体晶片的前表面的方法，将半导体晶片的前表面暴露于含有源气体和载气的处理气体，并且半导体晶片的背表面暴露位移气体，其中置换气体含有不超过5体积％的氢，结果是基本上避免了掺杂剂从氢的强化的半导体晶片的背表面扩散出来。通过该处理，可以制造基板电阻率<= 100mOmegacm的半导体晶片和不具有背面涂覆的>1Ω·macm的外延层的电阻率，其半导体晶片的外延层具有电阻不均匀性 <10％。

6. 发明授权

US5897705A Process for the production of an epitaxially coated semiconductor wafer 失效
标题翻译：用于制造外延涂覆的半导体晶片的方法
公开(公告)号：US5897705A
公开(公告)日：1999-04-27
申请号：US630883
申请日：1996-04-02
申请人： Wolfgang Siebert , Erwin-Peter Mayer
发明人： Wolfgang Siebert , Erwin-Peter Mayer
IPC分类号： C30B29/06 , C30B13/00 , C30B33/00 , C30B33/08 , H01L21/20 , H01L21/205 , H01L21/208 , H01L21/322 , H01L21/329 , H01L29/47 , H01L29/872 , C30B13/10
CPC分类号： C30B29/06 , C30B13/00 , C30B33/00
摘要： A process for the production of an epitaxially coated semiconductor wafer, composed of a substrate wafer of monocrystalline silicon having a front side and a rear side, has at least one layer of semiconductor material which is epitaxially deposited on the front side of the substrate wafer and which is obtained by production of a heavily doped silicon monocrystal by crucible-free zone pulling, production of a substrate wafer having polished front side from the monocrystal and deposition of at least one epitaxial layer of semiconductor material on the front side of the substrate wafer.
摘要翻译：制造外延涂覆的半导体晶片的方法由具有正面和背面的单晶硅的衬底晶片组成，具有外延沉积在衬底晶片前侧的至少一层半导体材料，其通过无坩埚区域拉制生产重掺杂硅单晶而获得，制造具有从单晶抛光的前侧的衬底晶片，并且在衬底晶片的正面上沉积至少一个半导体材料外延层。

7. 发明授权

US4632998A Method of mixing a finely divided liquid with a gas to produce a mixture with the liquid in excess of its explosive limit 失效
标题翻译：将细分的液体与气体混合以产生超过其爆炸极限的液体的混合物的方法
公开(公告)号：US4632998A
公开(公告)日：1986-12-30
申请号：US657331
申请日：1984-10-03
申请人： Rolf Geissen , Wolfgang Siebert
发明人： Rolf Geissen , Wolfgang Siebert
IPC分类号： B01J10/00 , B01J19/00 , C07C51/265 , C07C51/31 , C07D307/89
CPC分类号： C07C51/265 , B01J19/002 , C07C51/313 , B01J2219/00263
摘要： A mixture will involve a risk of explosion if a concentration limit is exceeded. For this reason only part of the liquid is admixed to the gas in a first mixing zone so that the concentration limit above which there is a risk of explosion will not be exceeded. In a second mixing zone, the remaining quantity of liquid is added to the mixture withdrawn from the first mixing zone and the explosive concentration is exceeded. That mixture, in which the gas and liquid are distributed as homogeneously as possible, is reacted in a reaction zone. The reaction zone directly succeeds the second mixing zone.
摘要翻译：如果超过浓度限制，混合物将会有爆炸危险。为此，在第一混合区域中仅将一部分液体与气体混合，从而不会超过高于其的爆炸危险的浓度限度。在第二混合区中，将剩余量的液体加入从第一混合区抽出的混合物中，并且超过爆炸浓度。气体和液体尽可能均匀分布的混合物在反应区中反应。反应区直接成为第二混合区。

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