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1. 发明授权

US06630024B2 Method for the production of an epitaxially grown semiconductor wafer 失效
标题翻译：用于生产外延生长的半导体晶片的方法
公开(公告)号：US06630024B2
公开(公告)日：2003-10-07
申请号：US09864994
申请日：2001-05-24
申请人： Rüdiger Schmolke , Reinhard Schauer , Günther Obermeier , Dieter Gräf , Peter Storck , Klaus Messmann , Wolfgang Siebert
发明人： Rüdiger Schmolke , Reinhard Schauer , Günther Obermeier , Dieter Gräf , Peter Storck , Klaus Messmann , Wolfgang Siebert
IPC分类号： C30B2500
CPC分类号： C30B29/06 , C30B25/02
摘要： A method for the production of a semiconductor wafer having a front and a back and an epitaxial layer of semiconductor material deposited on the front, includes the following process steps: (a) preparing a substrate wafer having a polished front and a specific thickness; (b) pretreating the front of the substrate wafer in the presence of HCl gas and a silane source at a temperature of from 950 to 1250 degrees Celsius in an epitaxy reactor, the thickness of the substrate wafer remaining substantially unchanged; and (c) depositing the epitaxial layer on the front of the pretreated substrate wafer.
摘要翻译：一种用于制造半导体晶片的方法，该半导体晶片具有沉积在其前面的半导体材料的前表面和外延层，包括以下工艺步骤：（a）制备具有抛光的正面和特定厚度的衬底晶片; b）在外延反应器中在950〜1250摄氏度的温度下，在HCl气体和硅烷源的存在下预处理基板晶片的正面，基板晶片的厚度基本保持不变; 和（c）在预处理的衬底晶片的前面沉积外延层。

2. 发明授权

US09240316B2 Method for producing an epitaxially coated semiconductor wafer 有权
公开(公告)号：US09240316B2
公开(公告)日：2016-01-19
申请号：US12386220
申请日：2009-04-15
申请人： Reinhard Schauer , Christian Hager
发明人： Reinhard Schauer , Christian Hager
IPC分类号： H01L21/324 , H01L21/02 , C30B33/02 , C30B25/02 , C30B25/10 , C30B29/06
CPC分类号： H01L21/02532 , C30B25/02 , C30B25/10 , C30B29/06 , C30B33/02 , H01L21/02381 , H01L21/0262 , H01L21/02664 , H01L21/324
摘要： Epitaxially coated semiconductor wafers are prepared by a process in which a semiconductor wafer polished at least on its front side is placed on a susceptor in a single-wafer epitaxy reactor and epitaxially coated on its polished front side at temperatures of 1000-1200° C., wherein, after coating, the semiconductor wafer is cooled in the temperature range from 1200° C. to 900° C. at a rate of less than 5° C. per second. In a second method for producing an epitaxially coated wafer, the wafer is placed on a susceptor in the epitaxy reactor and epitaxially coated on its polished front side at a deposition temperature of 1000-1200° C., and after coating, and while still at the deposition temperature, the wafer is raised for 1-60 seconds to break connections between susceptor and wafer produced by deposited semiconductor material before the wafer is cooled.

3. 发明申请

US20060079089A1 Coated semiconductor wafer, and process and apparatus for producing the semiconductor wafer 有权
标题翻译：涂覆半导体晶片，以及用于制造半导体晶片的工艺和设备
公开(公告)号：US20060079089A1
公开(公告)日：2006-04-13
申请号：US11283272
申请日：2005-11-18
申请人： Reinhard Schauer , Norbert Werner
发明人： Reinhard Schauer , Norbert Werner
IPC分类号： H01L21/44
CPC分类号： C30B31/14 , C23C16/4581 , C30B25/12
摘要： A susceptor configured to receive a semiconductor wafer for deposition of a layer on a front surface of the semiconductor wafer by chemical vapor deposition (CVD) has a gas-permeable structure with a porosity of at least 15%, a density of from 0.5 to 1.5 g/cm3, a pore diameter of less than 0.1 mm and an internal surface area of the pores which is greater than 10,000 cm2/cm3. Semiconductor wafers having front surface coated by chemical vapor deposition (CVD) and a polished or etched back surface, prepared using the gas-permeable susceptor, have a nanotopography of the back surface, expressed as the PV (=peak to valley) height fluctuation, of less than 5 nm, and at the same time the halo of the back surface, expressed as haze, is less than 5 ppm.
摘要翻译：构造成接收用于通过化学气相沉积（CVD）在半导体晶片的前表面上沉积层的半导体晶片的感受体具有孔隙率为至少15％，密度为0.5至1.5的透气结构 g / cm 3，孔径小于0.1mm，孔的内表面积大于10,000cm 2 / cm 3， SUP>。具有通过化学气相沉积（CVD）涂覆的正面的半导体晶片和使用气体可渗透感受器制备的抛光或蚀刻后表面具有以PV（=峰谷）高度波动表示的背表面的纳米形貌，小于5nm，同时背表面的光晕，以雾度表示，小于5ppm。

4. 发明授权

US06306735B1 Method for producing a semiconductor wafer 失效
标题翻译：半导体晶片的制造方法
公开(公告)号：US06306735B1
公开(公告)日：2001-10-23
申请号：US09568914
申请日：2000-05-11
申请人： Reinhard Schauer
发明人： Reinhard Schauer
IPC分类号： H01L2120
CPC分类号： C30B29/06 , C30B25/02 , C30B33/005
摘要： A method for producing a semiconductor wafer includes the deposition of an epitaxial layer onto a substrate wafer in a deposition reactor. The semiconductor wafer, following the deposition of the epitaxial layer, undergoes treatment in an ozone-containing atmosphere.
摘要翻译：制造半导体晶片的方法包括在沉积反应器中在衬底晶片上沉积外延层。在沉积外延层之后，半导体晶片在含臭氧的气氛中进行处理。

5. 发明授权

US08304860B2 Epitaxially coated silicon wafer and method for producing an epitaxially coated silicon wafer 有权
标题翻译：外延涂覆硅晶片和外延涂覆硅晶片的制造方法
公开(公告)号：US08304860B2
公开(公告)日：2012-11-06
申请号：US12658816
申请日：2010-02-16
申请人： Friedrich Passek , Frank Laube , Martin Pickel , Reinhard Schauer
发明人： Friedrich Passek , Frank Laube , Martin Pickel , Reinhard Schauer
IPC分类号： H01L29/06
CPC分类号： H01L21/02021 , C30B29/06 , C30B33/00 , H01L21/02052 , H01L21/02087 , H01L21/02381 , H01L21/02532 , H01L21/02658 , H01L21/67046
摘要： Epitaxially coated silicon wafers have a rounded and polished edge region and a region adjacent to the edge having a width of 3 mm on the front and rear sides, a surface roughness in edge region of 0.1-1.5 nm RMS relative to a spatial wavelength range of 10-80 μm, and a variation of surface roughness of 1-10%. The wafer edges, after polishing, are examined for defects and roughness at the edge and surrounding region. Silicon wafers having a surface roughness of less than 1 nm RMS are pretreated in single wafer epitaxy reactors, first in a hydrogen atmosphere at a flow rate of 1-100 slm and in a second step, an etching medium with a flow rate of 0.5-5 slm is conducted onto the edge region of the wafer by a gas distribution device. The wafer is then epitaxially coated.
摘要翻译：外延涂覆的硅晶片具有圆形和抛光的边缘区域和与边缘相邻的区域，其在前侧和后侧具有3mm的宽度，相对于空间波长范围为0.1-1.5nm RMS的边缘区域的表面粗糙度 10-80μm，表面粗糙度变化范围为1-10％。抛光后的晶片边缘被检查边缘和周围区域的缺陷和粗糙度。具有小于1nm RMS的表面粗糙度的硅晶片在单晶片外延反应器中进行预处理，首先在氢气气氛中以1-100slm的流速进行预处理，在第二步中，流动速率为0.5- 通过气体分配装置将5slm传导到晶片的边缘区域。然后将晶片外延涂覆。

6. 发明申请

US20090261456A1 EPITAXIALLY COATED SILICON WAFER AND METHOD FOR PRODUCING EPITAXIALLY COATED SILICON WAFERS 有权
标题翻译：外延涂层硅膜及其生产外涂涂层硅膜的方法
公开(公告)号：US20090261456A1
公开(公告)日：2009-10-22
申请号：US12493370
申请日：2009-06-29
申请人： Reinhard Schauer , Norbert Werner
发明人： Reinhard Schauer , Norbert Werner
IPC分类号： H01L29/06
CPC分类号： C30B25/02 , C30B29/06 , H01L21/02381 , H01L21/0243 , H01L21/02532 , H01L21/0262 , H01L21/02658 , H01L21/3065 , Y10S438/905
摘要： A multiplicity of silicon wafers polished at least on their front sides are provided and successively coated individually in an epitaxy reactor by a procedure whereby one of the wafers is placed on a susceptor in the epitaxy reactor, is pretreated under a hydrogen atmosphere at a first hydrogen flow rate, and with addition of an etching medium to the hydrogen atmosphere at a reduced hydrogen flow rate in a second step, is subsequently coated epitaxially on its polished front side, and removed from the reactor. An etching treatment of the susceptor follows a specific number of epitaxial coatings. Silicon wafers produced thereby have a global flatness value GBIR of 0.07-0.3 μm relative to an edge exclusion of 2 mm.
摘要翻译：提供了至少在其前侧抛光的多个硅晶片，并且通过将晶片中的一个放置在外延反应器中的基座上的步骤，在外延反应器中单独连续地涂覆，在氢气氛下在第一氢随后在第二步骤中以降低的氢气流量向氢气气氛中添加蚀刻介质，随后在其抛光的正面外延涂覆并从反应器中除去。感受器的蚀刻处理遵循特定数量的外延涂层。因此生产的硅片相对于2mm的边缘排除具有0.07-0.3μm的全局平坦度值GBIR。

7. 发明授权

US5355831A Epitaxially coated semiconductor wafers having low-oxygen zone of adjustable extent and process for producing same 失效
标题翻译：具有可调程度的低氧区的外延涂覆的半导体晶片和用于制造其的方法
公开(公告)号：US5355831A
公开(公告)日：1994-10-18
申请号：US879780
申请日：1992-05-06
申请人： Reinhard Schauer
发明人： Reinhard Schauer
IPC分类号： H01L21/20 , H01L21/205 , C30B25/02
CPC分类号： H01L21/02381 , H01L21/0245 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262
摘要： For the production of high-quality electronic components based on semiconductors, semiconductor wafers are needed which have a substantially lower oxygen concentration in the wafer region near the surface in which the components are integrated than in the other wafer region. This region, known as "denuded zone," was hitherto obtained by prolonged heat treatment of the wafers in a batch reactor as a consequence of partial diffusion of the oxygen out from the substrate. In the process according to the invention, the low-oxygen region is produced by the epitaxial deposition of two differently doped semiconductor layers on the wafer surface in a single-wafer reactor.
摘要翻译：为了生产基于半导体的高质量电子部件，需要半导体晶片，其中在组件集成的表面附近的晶片区域中的氧浓度基本上低于在另一个晶片区域中的氧浓度。迄今为止，该区域被称为“裸露区域”，这是由于间歇反应器中的晶片的长时间热处理而获得的，这是由于从衬底部分扩散出氧的结果。在根据本发明的方法中，通过在单晶片反应器中在晶片表面上外延沉积两个不同掺杂的半导体层来产生低氧区。

8. 发明授权

US07922813B2 Epitaxially coated silicon wafer and method for producing epitaxially coated silicon wafers 有权
标题翻译：外延涂覆的硅片及其制造外延硅片的方法
公开(公告)号：US07922813B2
公开(公告)日：2011-04-12
申请号：US11521980
申请日：2006-09-15
申请人： Reinhard Schauer , Christian Hager
发明人： Reinhard Schauer , Christian Hager
IPC分类号： C30B21/02
CPC分类号： C30B25/02 , C30B29/06
摘要： Epitaxially coated silicon wafers, are produced by epitaxially coating a multiplicity of wafers polished at least on their front sides, successively and individually in an epitaxy reactor, by placing a silicon wafer on a susceptor, pretreating under a hydrogen atmosphere followed by addition of an etching medium to the hydrogen atmosphere, coating epitaxially on the polished front side and removing the water from the epitaxy reactor. The susceptor is then heated, in each case, to a temperature of at least 1000° C. under a hydrogen atmosphere, and furthermore an etching treatment of the susceptor and a momentary coating of the susceptor with silicon are effected after a specific number of epitaxial coatings. Silicon wafers characterized by a parameter R30-1 mm of −10 nm to +10 nm, determined at a distance of 1 mm from the edge of the silicon wafer are produced.
摘要翻译：外延涂覆的硅晶片通过在外延反应器中连续和单独地在其外表面上涂覆多个晶片来制造，通过将硅晶片放置在基座上，在氢气气氛下预处理，然后加入蚀刻介质到氢气氛，在抛光的前侧外延地涂覆并从外延反应器中除去水。然后在氢气氛下，将感受器在每一种情况下加热到至少1000℃的温度，此外，在经受特定数目的外延之后，对感受体进行蚀刻处理和基体与硅的瞬时涂层涂料。制造的硅晶片的特征在于距离硅晶片的边缘1mm的距离处确定为-10nm至+ 10nm的参数R30-1mm。

9. 发明授权

US07838398B2 Epitaxially coated semiconductor wafer and device and method for producing an epitaxially coated semiconductor wafer 有权
标题翻译：外延涂覆的半导体晶片以及用于制造外延涂覆的半导体晶片的器件和方法
公开(公告)号：US07838398B2
公开(公告)日：2010-11-23
申请号：US11985092
申请日：2007-11-14
申请人： Reinhard Schauer , Norbert Werner
发明人： Reinhard Schauer , Norbert Werner
IPC分类号： H01L21/76 , C30B23/00 , C30B25/00 , C30B28/12 , C30B28/14
CPC分类号： H01L21/02579 , C23C16/4585 , C30B25/12 , H01L21/02381 , H01L21/02532 , H01L21/02634 , H01L21/68735 , Y10T428/24612
摘要： In a method for producing epitaxially coated semiconductor wafers, a multiplicity of prepared, front side-polished semiconductor wafers are successively coated individually with an epitaxial layer on their polished front sides at temperatures of 800-1200° C. in a reactor, while supporting the prepared semiconductor wafer over a susceptor having a gas-permeable structure, on a ring placed on the susceptor which acts as a thermal buffer between the susceptor and the supported semiconductor wafer, the semiconductor wafer resting on the ring, and its backside facing but not contacting the susceptor, so that gaseous substances are delivered from a region over the backside of the semiconductor wafer by gas diffusion through the susceptor into a region over the backside of the susceptor, the semiconductor wafer contacting the ring only in an edge region of its backside, wherein no stresses measurable by means of photoelastic stress measurement (“SIRD”) occur in the semiconductor wafer.
摘要翻译：在制造外延涂覆的半导体晶片的方法中，多个制备的正面抛光的半导体晶片在其抛光的前侧上在反应器中在800-1200℃的温度下分别独立地涂覆有外延层，同时支撑准备的半导体晶片在具有透气结构的基座上，位于基座上的环上，该基座用作基座和被支撑的半导体晶片之间的热缓冲器，半导体晶片位于环上，并且其背面面对但不接触使得气体物质通过气体通过基座通过基座的背面从半导体晶片的背面的区域传送到基座的背面上的区域中，半导体晶片仅在其背面的边缘区域接触环，其中在半导体晶片中不存在通过光弹性应力测量（“SIRD”）测量的应力。

10. 发明申请

US20070062438A1 Epitaxially coated silicon wafer and method for producing epitaxially coated silicon wafers 有权
标题翻译：外延涂覆的硅片及其制造外延硅片的方法
公开(公告)号：US20070062438A1
公开(公告)日：2007-03-22
申请号：US11521980
申请日：2006-09-15
申请人： Reinhard Schauer , Christian Hager
发明人： Reinhard Schauer , Christian Hager
IPC分类号： C30B23/00 , C30B25/00 , C30B28/12 , C30B28/14
CPC分类号： C30B25/02 , C30B29/06
摘要： Epitaxially coated silicon wafers, are produced by epitaxially coating a multiplicity of wafers polished at least on their front sides, successively and individually in an epitaxy reactor, by placing a silicon wafer on a susceptor, pretreating under a hydrogen atmosphere followed by addition of an etching medium to the hydrogen atmosphere, coating epitaxially on the polished front side and removing the water from the epitaxy reactor. The susceptor is then heated, in each case, to a temperature of at least 1000° C. under a hydrogen atmosphere, and furthermore an etching treatment of the susceptor and a momentary coating of the susceptor with silicon are effected after a specific number of epitaxial coatings. Silicon wafers characterized by a parameter R30-1 mm of −10 nm to +10 nm, determined at a distance of 1 mm from the edge of the silicon wafer are produced.
摘要翻译：外延涂覆的硅晶片通过在外延反应器中连续和单独地在其外表面上涂覆多个晶片来制造，通过将硅晶片放置在基座上，在氢气气氛下预处理，然后加入蚀刻介质到氢气氛，在抛光的前侧外延地涂覆并从外延反应器中除去水。然后在氢气氛下，将感受器在每一种情况下加热到至少1000℃的温度，此外，在经受特定数目的外延之后，对感受体进行蚀刻处理和基体与硅的瞬时涂层涂料。制造的硅晶片的特征在于距离硅晶片的边缘1mm的距离处确定为-10nm至+ 10nm的参数R30-1mm。

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