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    • 3. 发明授权
    • Method and apparatus for multilayer film deposition utilizing rotating multiple magnetron cathode device
    • 利用旋转多磁控阴极装置的多层膜沉积方法和装置
    • US06328856B1
    • 2001-12-11
    • US09521463
    • 2000-03-08
    • Charles Frederick Brucker
    • Charles Frederick Brucker
    • C23C1406
    • H01J37/3429C23C14/3407C23C14/352H01J37/3408
    • An apparatus for forming a multilayer film on a substrate surface comprises a multi-target sputtering source having a planar end face adapted for rotation about a central axis and including at least a pair of independently operable planar magnetron cathodes having sputtering targets composed of different materials, and a substrate mounting means for providing a stationary substrate in spaced-apart, facing relation to the sputtering source. According to the inventive method, the multi-target source is rotated about its central axis while the substrate is maintained stationary, thereby depositing a multi-layer film stack on the substrate. The invention finds particular utility in the formation of superlattice structures usable as recording medium layers in the fabrication of magnetic and magneto-optical (MO) data/information storage and retrieval media.
    • 一种用于在基板表面上形成多层膜的装置包括多靶溅射源,其具有适于围绕中心轴旋转的平面端面,并且包括至少一对具有由不同材料构成的溅射靶的独立可操作的平面磁控阴极, 以及用于提供与溅射源间隔开的面对关系的固定衬底的衬底安装装置。 根据本发明的方法,多靶源围绕其中心轴旋转,同时衬底保持静止,从而在衬底上沉积多层膜堆叠。 本发明在形成用于制造磁和磁光(MO)数据/信息存储和检索介质的记录介质层的超晶格结构中发现特别有用。
    • 4. 发明授权
    • Gas injection for uniform composition reactively sputter-deposited thin films
    • 用于均匀组成的气体注入反应溅射沉积的薄膜
    • US07141145B2
    • 2006-11-28
    • US10676105
    • 2003-10-02
    • Charles Frederick BruckerPaul S. McLeodChang Yi
    • Charles Frederick BruckerPaul S. McLeodChang Yi
    • C23C14/34
    • H01J37/3244C23C14/0063C23C14/3464
    • A method of forming a thin film on a substrate/workpiece by sputtering, comprising steps of: (a) providing an apparatus comprising a vacuum chamber including at least one sputtering source and a gas supply means for injecting a gas containing at least one reactive component into said chamber, the gas supply means comprising a plurality of differently-sized outlet orifices adapted for providing substantially the same flow rate of gas from each orifice; (b) providing a substrate/workpiece having at least one surface for formation of a thin film thereon; (c) generating a sputtered particle flux from the at least one sputtering source; (d) injecting the gas containing the at least one reactive component into the chamber via the gas supply means, such that the same gas flow rate is provided at each orifice; and (e) forming a reactively sputtered thin film on the at least one surface of the substrate/workpiece, the reactively sputtered thin film having a substantially uniform content of the at least one reactive component.
    • 一种通过溅射在衬底/工件上形成薄膜的方法,包括以下步骤:(a)提供一种包括真空室的设备,该真空室包括至少一个溅射源和气体供应装置,用于将含有至少一个反应组分 所述气体供应装置包括多个不同尺寸的出口孔口,其适于提供与每个孔口基本相同的气体流量; (b)提供具有至少一个用于在其上形成薄膜的表面的基底/工件; (c)从所述至少一个溅射源产生溅射的粒子通量; (d)经由气体供给装置将含有至少一个反应性组分的气体注入室中,使得在每个孔口处设置相同的气体流量; 和(e)在所述衬底/工件的所述至少一个表面上形成反应溅射的薄膜,所述反应溅射的薄膜具有至少一个反应组分的基本上均匀的含量。