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1. 发明授权

US06697294B1 Designs of reference cells for magnetic tunnel junction (MTJ) MRAM 有权
标题翻译：磁隧道结（MTJ）MRAM参考电池设计
公开(公告)号：US06697294B1
公开(公告)日：2004-02-24
申请号：US10055118
申请日：2002-01-22
申请人： Qiuqun Qi , Xizeng Shi , Matthew R. Gibbons
发明人： Qiuqun Qi , Xizeng Shi , Matthew R. Gibbons
IPC分类号： G11C702
CPC分类号： G11C11/16
摘要： A reference cell circuit for a magnetic tunnel junction MRAM includes two magnetic tunnel junctions where one is always set to a low resistance state and the other is always set to a high resistance state. The two magnetic tunnel junctions are connected between two segments of a bit line. The reference cell also includes a digit line that crosses both of the bit line segments.
摘要翻译：用于磁隧道结MRAM的参考单元电路包括两个磁隧道结，其中一个总是设置为低电阻状态，另一个总是设置为高电阻状态。两个磁隧道结连接在位线的两段之间。参考单元还包括穿过两个位线段的数字线。

2. 发明授权

US06721203B1 Designs of reference cells for magnetic tunnel junction (MTJ) MRAM 有权
标题翻译：磁隧道结（MTJ）MRAM参考电池设计
公开(公告)号：US06721203B1
公开(公告)日：2004-04-13
申请号：US10017647
申请日：2001-12-12
申请人： Qiuqun Qi , Xizeng Shi , Matthew R. Gibbons
发明人： Qiuqun Qi , Xizeng Shi , Matthew R. Gibbons
IPC分类号： G11C1115
CPC分类号： G11C11/16
摘要： A reference cell circuit for a magnetic tunnel junction MRAM includes a first magnetic tunnel junction device set to a low resistance state and a second magnetic tunnel junction device set to a high resistance state. A reference cell series unit includes the first magnetic tunnel junction device electrically coupled in series with the second magnetic tunnel junction device. The reference cell series unit further has a first end and a second end with the first end being electrically coupled to a first current source and the second end being electrically coupled to a current sink and a second current source.
摘要翻译：用于磁性隧道结MRAM的参考单元电路包括设置为低电阻状态的第一磁性隧道结器件和设置为高电阻状态的第二磁性隧道结器件。参考单元串联单元包括与第二磁隧道结装置串联电耦合的第一磁性隧道结装置。参考单元串联单元还具有第一端和第二端，其第一端电耦合到第一电流源，并且第二端电耦合到电流吸收器和第二电流源。

3. 发明授权

US06687178B1 Temperature dependent write current source for magnetic tunnel junction MRAM 有权
标题翻译：磁性隧道结MRAM的温度依赖写入电流源
公开(公告)号：US06687178B1
公开(公告)日：2004-02-03
申请号：US10017925
申请日：2001-12-07
申请人： Qiuqun Qi , Xizeng Shi
发明人： Qiuqun Qi , Xizeng Shi
IPC分类号： G11C704
CPC分类号： G11C7/04 , G11C11/16
摘要： An MRAM storage device includes temperature dependent current sources that adjust their outputs as temperature varies. Temperature dependent current sources include one or more diodes connected to a transistor. As temperature varies so does the voltage drop across the diodes. In addition, the MRAM data storage device includes at least one digit line, at least one bit line, and at least one MRAM cell disposed proximate to a junction of a digit line and a bit line. Each end of each digit line is connected to temperature dependent current sources and current sinks. One end of each bit line is connected to a temperature dependent current source while the other end of each bit line is connected to a current sink. Two logic signals R and D are used to activate a write operation and determine the direction of the write current in the digit line.
摘要翻译： MRAM存储设备包括随温度变化调节其输出的温度相关电流源。与温度相关的电流源包括连接到晶体管的一个或多个二极管。随着温度的变化，二极管上的电压降也是如此。此外，MRAM数据存储装置包括至少一个数字线，至少一个位线，以及靠近数字线和位线的结点设置的至少一个MRAM单元。每个数字线的每一端连接到与温度相关的电流源和电流吸收器。每个位线的一端连接到与温度相关的电流源，而每个位线的另一端连接到电流吸收器。两个逻辑信号R和D用于激活写入操作并确定数字线中写入电流的方向。

4. 发明授权

US06680863B1 MRAM memory array having merged word lines 有权
标题翻译：具有合并字线的MRAM存储器阵列
公开(公告)号：US06680863B1
公开(公告)日：2004-01-20
申请号：US10192276
申请日：2002-07-09
申请人： Xizeng Shi , Qiuqun Qi
发明人： Xizeng Shi , Qiuqun Qi
IPC分类号： G11C1114
CPC分类号： G11C8/16
摘要： A method and system for providing and using a magnetic memory including magnetic memory cells is disclosed. The method and system include providing a magnetic tunneling junction including a first ferromagnetic layer, a second ferromagnetic layer and an insulating layer between the first ferromagnetic layer and the second ferromagnetic layer. The magnetic memory cell is coupled to a merged word line and a bit line. The merged word line selects the magnetic memory cell during a reading and carries a write current for the magnetic memory cell during writing. The bit line provides current to the magnetic memory cell during the reading and the writing. The currents provided by the bit line and the merged word line during writing allow data to be written to the magnetic memory cell.
摘要翻译：公开了一种用于提供和使用包括磁存储器单元的磁存储器的方法和系统。该方法和系统包括在第一铁磁层和第二铁磁层之间提供包括第一铁磁层，第二铁磁层和绝缘层的磁隧道结。磁存储单元耦合到合并字线和位线。合并字线在读取期间选择磁存储单元，并在写入期间携带磁存储单元的写入电流。在读取和写入期间，位线向磁存储单元提供电流。在写入期间由位线和合并字线提供的电流允许将数据写入磁存储单元。

5. 发明授权

US06834010B1 Temperature dependent write current source for magnetic tunnel junction MRAM 有权
公开(公告)号：US06834010B1
公开(公告)日：2004-12-21
申请号：US10741841
申请日：2003-12-18
申请人： Qiuqun Qi , Xizeng Shi
发明人： Qiuqun Qi , Xizeng Shi
IPC分类号： G11C700
CPC分类号： G11C7/04 , G11C11/16
摘要： An MRAM storage device includes temperature dependent current sources that adjust their outputs as temperature varies. Temperature dependent current sources include one or more diodes connected to a transistor. As temperature varies so does the voltage drop across the diodes. In addition, the MRAM data storage device includes at least one digit line, at least one bit line, and at least one MRAM cell disposed proximate to a junction of a digit line and a bit line. Each end of each digit line is connected to temperature dependent current sources and current sinks. One end of each bit line is connected to a temperature dependent current source while the other end of each bit line is connected to a current sink. Two logic signals R and D are used to activate a write operation and determine the direction of the write current in the digit line.

6. 发明授权

US06552928B1 Read-write control circuit for magnetic tunnel junction MRAM 有权
标题翻译：磁隧道结MRAM读写控制电路
公开(公告)号：US06552928B1
公开(公告)日：2003-04-22
申请号：US10011063
申请日：2001-11-08
申请人： Qiuqun Qi , Xizeng Shi
发明人： Qiuqun Qi , Xizeng Shi
IPC分类号： G11C1114
CPC分类号： G11C11/14
摘要： An MRAM data storage device has at least one digit line, at least one bit line, and at least one MRAM cell disposed proximate to a digit line and electrically connected to a bit line. Each end of each digit line is connected to a write current source and a write current sink. One end of each bit line is connected to a write current source and a read current source while the other end of each bit line is connected to a write current sink. Two logic signals R and D are used to determine the direction of the write current in the digit line, to select between the read current and the write current in the bit line. The state of the MRAM cell is read by detecting the voltage drop across the cell when a read current is applied.
摘要翻译： MRAM数据存储设备具有至少一个数字线，至少一个位线和至少一个MRAM单元，其布置在靠近数字线并电连接到位线。每个数字线的每一端连接到写入电流源和写入电流吸收器。每个位线的一端连接到写入电流源和读取电流源，而每个位线的另一端连接到写入电流吸收器。两个逻辑信号R和D用于确定数字线中写入电流的方向，以便在位线中的读取电流和写入电流之间进行选择。当读取电流被施加时，通过检测电池两端的电压降来读取MRAM单元的状态。

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