专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20050239241A1 High speed lateral heterojunction MISFETS realized by 2-dimensional bandgap engineering and methods thereof 有权
标题翻译：通过二维带隙工程实现的高速横向异质结MISFETS及其方法
公开(公告)号：US20050239241A1
公开(公告)日：2005-10-27
申请号：US11158726
申请日：2005-06-22
申请人： Qiqing Ouyang , Jack Chu
发明人： Qiqing Ouyang , Jack Chu
IPC分类号： H01L29/78 , H01L21/8238 , H01L29/165 , H01L29/80 , H01L21/336
CPC分类号： H01L21/823807 , H01L21/823814 , H01L29/165 , H01L29/802 , Y10S438/933
摘要： A method for forming and the structure of a strained lateral channel of a field effect transistor, a field effect transistor and CMOS circuitry is described incorporating a drain, body and source region on a single crystal semiconductor substrate wherein a hetero-junction is formed between the source and body of the transistor, wherein the source region and channel are independently lattice strained with respect the body region. The invention reduces the problem of leakage current from the source region via the hetero-junction and lattice strain while independently permitting lattice strain in the channel region for increased mobility via choice of the semiconductor materials and alloy composition.
摘要翻译：描述了一种用于形成场效应晶体管，场效应晶体管和CMOS电路的应变横向沟道结构的方法，其在单晶半导体衬底上结合了漏极，主体和源极区域，其中在晶体管的源极和主体，其中源极区域和沟道独立地相对于身体区域进行晶格应变。本发明通过异质结和晶格应变来减少来自源极区的漏电流的问题，同时通过选择半导体材料和合金组成独立地允许沟道区域中的晶格应变增加迁移率。

2. 发明申请

US20050077510A1 Structure for and method of fabricating a high-mobility field-effect transistor 有权
标题翻译：制造高迁移率场效应晶体管的结构和方法
公开(公告)号：US20050077510A1
公开(公告)日：2005-04-14
申请号：US10685013
申请日：2003-10-14
申请人： Jack Chu , Steven Koester , Qiqing Ouyang
发明人： Jack Chu , Steven Koester , Qiqing Ouyang
IPC分类号： H01L29/06 , H01L21/20 , H01L21/335 , H01L21/338 , H01L29/778 , H01L29/78 , H01L29/786 , H01L29/812 , H01L31/0328 , H01L21/336
CPC分类号： H01L29/66431 , H01L29/7782 , Y10S438/933 , Y10S438/938
摘要： A structure and method of fabricating a high-mobility semiconductor layer structure and field-effect transistor (MODFET) that includes a high-mobility conducting channel, while at the same time, maintaining counter doping to control deleterious short-channel effects. The MODFET design includes a high-mobility conducting channel layer wherein the method allows the counter doping to be formed using a standard technique such as ion implantation, and further allows the high-mobility channel to be in close proximity to the counter doping without degradation of the mobility.
摘要翻译：制造高迁移率半导体层结构的结构和方法以及包括高迁移率导电沟道的场效应晶体管（MODFET），同时保持反掺杂以控制有害的短沟道效应。 MODFET设计包括高迁移率导电沟道层，其中该方法允许使用诸如离子注入的标准技术形成反相掺杂，并且还允许高迁移率通道紧邻反掺杂而不降解流动性。

3. 发明申请

US20060234481A1 Structure for and method of fabricating a high-mobility field-effect transistor 有权
标题翻译：制造高迁移率场效应晶体管的结构和方法
公开(公告)号：US20060234481A1
公开(公告)日：2006-10-19
申请号：US11209408
申请日：2005-08-23
申请人： Jack Chu , Steven Koester , Qiqing Ouyang
发明人： Jack Chu , Steven Koester , Qiqing Ouyang
IPC分类号： H01L21/425
CPC分类号： H01L29/66431 , H01L29/7782 , Y10S438/933 , Y10S438/938
摘要： A structure and method of fabricating a high-mobility semiconductor layer structure and field-effect transistor (MODFET) that includes a high-mobility conducting channel, while at the same time, maintaining counter doping to control deleterious short-channel effects. The MODFET design includes a high-mobility conducting channel layer wherein the method allows the counter doping to be formed using a standard technique such as ion implantation, and further allows the high-mobility channel to be in close proximity to the counter doping without degradation of the mobility.
摘要翻译：制造高迁移率半导体层结构的结构和方法以及包括高迁移率导电沟道的场效应晶体管（MODFET），同时保持反掺杂以控制有害的短沟道效应。 MODFET设计包括高迁移率导电沟道层，其中该方法允许使用诸如离子注入的标准技术形成反相掺杂，并且还允许高迁移率通道紧邻反掺杂而不降解流动性。

4. 发明申请

US20050045905A1 ULTRA HIGH-SPEED SI/SIGE MODULATION-DOPED FIELD EFFECT TRANSISTORS ON ULTRA THIN SOI/SGOI SUBSTRATE 有权
标题翻译：超薄SOI / SGOI基板上的超高速SI / SIGE调制场效应晶体管
公开(公告)号：US20050045905A1
公开(公告)日：2005-03-03
申请号：US10652400
申请日：2003-08-29
申请人： Jack Chu , Qiqing Ouyang
发明人： Jack Chu , Qiqing Ouyang
IPC分类号： H01L21/335 , H01L29/10 , H01L29/778 , H01L29/786 , H01L29/24
CPC分类号： H01L29/1054 , H01L29/78687
摘要： A silicon and silicon germanium based semiconductor MODFET device design and method of manufacture. The MODFET design includes a high-mobility layer structure capable of ultra high-speed, low-noise for a variety of communication applications including RF, microwave, sub-millimeter-wave and millimeter-wave. The epitaxial field effect transistor layer structure includes critical (vertical and lateral) device scaling and layer structure design for a high mobility strained n-channel and p-channel transistor incorporating silicon and silicon germanium layers to form the optimum modulation-doped heterostructure on an ultra thin SOI or SGOI substrate capable of achieving greatly improved RF performance.
摘要翻译：基于硅和硅锗的半导体MODFET器件的设计与制造方法。 MODFET设计包括高移动性层结构，能够实现超高速，低噪声，适用于各种通信应用，包括射频，微波，亚毫米波和毫米波。外延场效应晶体管层结构包括用于高迁移率应变n沟道和p沟道晶体管的关键（垂直和横向）器件缩放和层结构设计，其包含硅和硅锗层，以在超超导体上形成最佳调制掺杂异质结构薄的SOI或SGOI衬底，能够实现大大提高射频性能。

5. 发明申请

US20070241367A1 Ultra Scalable High Speed Heterojunction Vertical n-Channel Misfets and Methods Thereof 失效
标题翻译：超可扩展高速异质结垂直n沟道误差及其方法
公开(公告)号：US20070241367A1
公开(公告)日：2007-10-18
申请号：US11735711
申请日：2007-04-16
申请人： Qiqing Ouyang , Jack Chu
发明人： Qiqing Ouyang , Jack Chu
IPC分类号： H01L29/739
CPC分类号： H01L29/7781 , H01L29/161 , H01L29/165 , H01L29/778 , H01L29/7782 , H01L29/7789 , H01L29/7828 , H01L29/78642 , H01L29/78687
摘要： A method for forming and the structure of a strained vertical channel of a field effect transistor, a field effect transistor and CMOS circuitry is described incorporating a drain, body and source region on a sidewall of a vertical single crystal semiconductor structure wherein a hetero-junction is formed between the source and body of the transistor, wherein the source region and channel are independently lattice strained with respect to the body region and wherein the drain region contains a carbon doped region to prevent the diffusion of dopants (boron) into the body. The invention reduces the problem of leakage current from the source region via the hetero-junction and lattice strain while independently permitting lattice strain in the channel region for increased mobility via choice of the semiconductor materials.
摘要翻译：描述了一种用于形成场效应晶体管，场效应晶体管和CMOS电路的应变垂直沟道的方法，其中在垂直单晶半导体结构的侧壁上结合有漏极，主体和源极区域，其中异质结形成在晶体管的源极和主体之间，其中源极区域和沟道相对于主体区域独立地晶格应变，并且其中漏极区域包含碳掺杂区域以防止掺杂剂（硼）扩散到体内。本发明通过异质结和晶格应变来减少来自源极区域的漏电流的问题，同时通过选择半导体材料独立地允许沟道区域中的晶格应变以增加迁移率。

6. 发明申请

US20070148939A1 Low leakage heterojunction vertical transistors and high performance devices thereof 审中-公开
标题翻译：低漏极异质结垂直晶体管及其高性能器件
公开(公告)号：US20070148939A1
公开(公告)日：2007-06-28
申请号：US11317285
申请日：2005-12-22
申请人： Jack Chu , Qiqing Ouyang
发明人： Jack Chu , Qiqing Ouyang
IPC分类号： H01L21/3205
CPC分类号： H01L21/823885 , H01L21/823807 , H01L29/045 , H01L29/161 , H01L29/165 , H01L29/778 , H01L29/7781 , H01L29/7782 , H01L29/7789 , H01L29/7828 , H01L29/7848 , H01L29/78642
摘要： A method for forming and the structure of a vertical channel of a field effect transistor, a field effect transistor and CMOS circuitry are described incorporating a drain, body and source region on a sidewall of a vertical single crystal semiconductor structure wherein a hetero-junction is formed between the source and body of the transistor, wherein the source region and channel are independently lattice strained with respect the body region and wherein the drain region contains a carbon doped region to prevent the diffusion of dopants (i.e., B and P) into the body. The invention reduces the problem of short channel effects such as drain induced barrier lowering and the leakage current from the source to drain regions via the hetero-junction and while independently permitting lattice strain in the channel region for increased mobility via choice of the semiconductor materials. The problem of scalability of the gate length below 100 nm is overcome by the heterojunction between the source and body regions.
摘要翻译：描述了一种用于形成场效应晶体管，场效应晶体管和CMOS电路的垂直沟道结构的方法，其在垂直单晶半导体结构的侧壁上结合有漏极，主体和源极区域，其中异质结为形成在晶体管的源极和主体之间，其中源极区域和沟道独立地相对于体区域进行晶格应变，并且其中漏极区域包含碳掺杂区域以防止掺杂剂（即，B和P）扩散到身体。本发明减少了短沟道效应的问题，例如漏极引起的栅极降低和从源极到漏极区域的漏电流经由异质结，并且同时独立地允许沟道区域中的晶格应变，以通过选择半导体材料增加迁移率。栅极长度低于100nm的可扩展性的问题通过源极和体区之间的异质结来克服。

7. 发明申请

US20050145941A1 High performance strained silicon FinFETs device and method for forming same 有权
标题翻译：高性能应变硅FinFET器件及其形成方法
公开(公告)号：US20050145941A1
公开(公告)日：2005-07-07
申请号：US10751916
申请日：2004-01-07
申请人： Stephen Bedell , Kevin Chan , Dureseti Chidambarrao , Silke Christiansen , Jack Chu , Anthony Domenicucci , Kam-Leung Lee , Anda Mocuta , John Ott , Qiqing Ouyang
发明人： Stephen Bedell , Kevin Chan , Dureseti Chidambarrao , Silke Christiansen , Jack Chu , Anthony Domenicucci , Kam-Leung Lee , Anda Mocuta , John Ott , Qiqing Ouyang
IPC分类号： H01L21/336 , H01L21/84 , H01L27/01 , H01L27/12 , H01L29/786
CPC分类号： H01L29/785 , H01L21/845 , H01L27/1211 , H01L29/66795
摘要： A strained Fin Field Effect Transistor (FinFET) (and method for forming the same) includes a relaxed first material having a sidewall, and a strained second material formed on the sidewall of the first material. The relaxed first material and the strained second material form a fin of the FinFET.
摘要翻译：应变的Fin场效应晶体管（FinFET）（及其形成方法）包括具有侧壁的松弛的第一材料和形成在第一材料的侧壁上的应变的第二材料。松弛的第一材料和应变的第二材料形成FinFET的鳍。

8. 发明申请

US20050127392A1 Ultra high-speed Si/SiGe modulation-doped field effect transistors on ultra thin SOI/SGOI substrate 失效
标题翻译：超薄SOI / SGOI基板上的超高速Si / SiGe调制掺杂场效应晶体管
公开(公告)号：US20050127392A1
公开(公告)日：2005-06-16
申请号：US10983488
申请日：2004-11-08
申请人： Jack Chu , Qiqing Ouyang
发明人： Jack Chu , Qiqing Ouyang
IPC分类号： H01L21/335 , H01L29/10 , H01L29/778 , H01L29/786 , H01L33/00
CPC分类号： H01L29/1054 , H01L29/78687
摘要： A silicon and silicon germanium based semiconductor MODFET device design and method of manufacture. The MODFET design includes a high-mobility layer structure capable of ultra high-speed, low-noise for a variety of communication applications including RF, microwave, sub-millimeter-wave and millimeter-wave. The epitaxial field effect transistor layer structure includes critical (vertical and lateral) device scaling and layer structure design for a high mobility strained n-channel and p-channel transistor incorporating silicon and silicon germanium layers to form the optimum modulation-doped heterostructure on an ultra thin SOI or SGOI substrate capable of achieving greatly improved RF performance.
摘要翻译：基于硅和硅锗的半导体MODFET器件的设计与制造方法。 MODFET设计包括高移动性层结构，能够实现超高速，低噪声，适用于各种通信应用，包括射频，微波，亚毫米波和毫米波。外延场效应晶体管层结构包括用于高迁移率应变n沟道和p沟道晶体管的关键（垂直和横向）器件缩放和层结构设计，其包含硅和硅锗层，以在超超导体上形成最佳调制掺杂异质结构薄的SOI或SGOI衬底，能够实现大大提高射频性能。

9. 发明授权

US11446179B2 Ocular device and method for glaucoma treatment 有权
公开(公告)号：US11446179B2
公开(公告)日：2022-09-20
申请号：US16374096
申请日：2019-04-03
申请人： Jack Chu
发明人： Jack Chu
IPC分类号： A61F9/007 , A61F9/00 , A61F9/008 , A61K9/00 , A61M27/00 , A61B3/16
摘要： An ocular device for treating glaucoma in an eye are described herein. The ocular device includes a first end, a second end, and a body. The first end is configured to seat in an anterior chamber of an eye. The first end includes an inlet configured to facilitate an ingress of aqueous humor into the ocular device. The second end is configured to seat in a tear film of the eye. The second end includes an outlet configured to facilitate release a flow of the aqueous humor into the tear film. The body is defined by a fluid conduit. The body includes a lumen having a lumen length and a lumen cross sectional area. The lumen length and the lumen cross sectional area are configured to control an intraocular pressure (IOP) of the eye by controlling the flow of the aqueous humor through the lumen.

10. 发明授权

US08968391B2 Systems and methods to reduce gel retraction 有权
标题翻译：减少凝胶收缩的系统和方法
公开(公告)号：US08968391B2
公开(公告)日：2015-03-03
申请号：US11685257
申请日：2007-03-13
申请人： Dennis Brooks , Jack Chu , Scott Doig , Trevor Huang , Tessy Kanayinkal
发明人： Dennis Brooks , Jack Chu , Scott Doig , Trevor Huang , Tessy Kanayinkal
IPC分类号： A01N1/02 , A61K38/48 , A61F2/06 , A01N65/00 , A61L27/36 , A61L27/54
CPC分类号： A61L27/3616 , A61L27/3641 , A61L27/3645 , A61L27/54 , A61L2300/414
摘要： Methods for ameliorating stent graft migration and endoleak using treatment site-specific cell growth promoting compositions in combination with stent grafts are disclosed. Also disclosed are application of cell growth promoting compositions such as, but not limited to, autologous platelet gel compositions directly to treatment sites during or after stent graft implantation.
摘要翻译：公开了使用处理部位特异性细胞生长促进组合物与支架移植物组合来改善支架移植物迁移和内漏的方法。还公开了将细胞生长促进组合物（例如但不限于自体血小板凝胶组合物）直接施用于支架移植物植入期间或之后的治疗部位。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式