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1. 发明申请

US20070093074A1 Ge-based semiconductor structure fabricated using a non-oxygen chalcogen passivation step 失效
标题翻译：使用非氧硫族元素钝化步骤制造的基于Ge的半导体结构
公开(公告)号：US20070093074A1
公开(公告)日：2007-04-26
申请号：US11259165
申请日：2005-10-26
申请人： Martin Frank , Steven Koester , John Ott , Huiling Shang
发明人： Martin Frank , Steven Koester , John Ott , Huiling Shang
IPC分类号： H01L21/31
CPC分类号： H01L21/02052 , H01L21/02046 , H01L21/02175 , H01L21/0228 , H01L21/28255 , H01L21/306 , H01L21/31604 , H01L29/513 , H01L29/66181
摘要： A method and structure in which Ge-based semiconductor devices such as FETs and MOS capacitors can be obtained are provided. Specifically, the present invention provides a method of forming a semiconductor device including a stack including a dielectric layer and a conductive material located on and/or within a Ge-containing material (layer or wafer) in which the surface thereof is non-oxygen chalcogen rich. By providing a non-oxygen chalcogen rich interface, the formation of undesirable interfacial compounds during and after dielectric growth is suppressed and interfacial traps are reduced in density.
摘要翻译：提供了可以获得诸如FET和MOS电容器的Ge基半导体器件的方法和结构。具体地说，本发明提供了一种形成半导体器件的方法，该半导体器件包括一个包含电介质层和导电材料的叠层，该叠层位于其表面为非氧硫属元素的含Ge材料（层或晶片）之上和/或之内丰富。通过提供非氧贫硫族元素界面，抑制了电介质生长期间和之后不期望的界面化合物的形成，并且界面陷阱的密度降低。

2. 发明授权

US07173251B2 Devices for imaging radionuclide emissions 有权
标题翻译：用于成像放射性核素排放的装置
公开(公告)号：US07173251B2
公开(公告)日：2007-02-06
申请号：US10433799
申请日：2001-12-04
申请人： George William Fraser , Robert John Ott , John Ernest Wyper Lees
发明人： George William Fraser , Robert John Ott , John Ernest Wyper Lees
IPC分类号： G01T1/24
CPC分类号： G01T1/2018 , A61B6/4258 , A61B6/508
摘要： There is disclosed a device for imaging radionuclide emissions comprising: a charge coupled device or CMOS active pixel sensor device; and a scintillator layer in direct contact with the charge coupled device or CMOS active pixel sensor device; in which the thickness of the scintillator layer is greater than 200 μm, preferably greater than 400 μm, most preferably about 500 μm.
摘要翻译：公开了一种用于对放射性核素发射进行成像的装置，包括：电荷耦合器件或CMOS有源像素传感器器件; 以及与电荷耦合器件或CMOS有源像素传感器器件直接接触的闪烁体层; 其中闪烁体层的厚度大于200μm，优选大于400μm，最优选约500μm。

3. 发明申请

US20060154429A1 Method for fabricating low-defect-density changed orientation Si 失效
标题翻译：制造低缺陷密度变化取向Si的方法
公开(公告)号：US20060154429A1
公开(公告)日：2006-07-13
申请号：US11031142
申请日：2005-01-07
申请人： Joel de Souza , Keith Fogel , John Ott , Devendra Sadana , Katherine Saenger
发明人： Joel de Souza , Keith Fogel , John Ott , Devendra Sadana , Katherine Saenger
IPC分类号： H01L21/336
CPC分类号： H01L21/26506 , H01L21/2022
摘要： The present invention provides a method for forming low-defect density changed-orientation Si by amorphization/templated recrystallization (ATR) processes in which regions of Si having a first crystal orientation are amorphized by ion implantation and then recrystallized into the orientation of a template layer having a different orientation. More generally, the invention relates to the high temperature annealing conditions needed to eliminate the defects remaining in Si-containing single crystal semiconductor materials formed by ion-implant-induced amorphization and templated recrystallization from a layer whose orientation may be the same or different from the amorphous layer's original orientation. The key component of the inventive method is a thermal treatment for minutes to hours in the the temperature range 1250-1330° C. to remove the defects remaining after the initial recrystallization anneal. The invention also provides a low-defect density changed-orientation Si formed by ATR for use in hybrid orientation substrates.
摘要翻译：本发明提供一种通过非晶化/模板化再结晶（ATR）工艺形成低缺陷密度变化取向Si的方法，其中具有第一晶体取向的Si区域通过离子注入而非晶化，然后再结晶成模板层的取向具有不同的方向。更一般地，本发明涉及消除由离子注入诱导的非晶化形成的含Si单晶半导体材料中剩余的缺陷所需的高温退火条件和从取向可以相同或不同的层的模板化再结晶非晶层的原始方向。本发明方法的关键组分是在1250-1330℃的温度范围内进行数分钟至数小时的热处理，以去除在初始再结晶退火之后残留的缺陷。本发明还提供了一种用于混合取向基板的ATR形成的低缺陷密度变化取向Si。

4. 发明授权

US3890540A Apparatus for operating gaseous discharge lamps on direct current from a source of alternating current 失效
标题翻译：用于从交流电源操作直流电的气体放电灯的装置
公开(公告)号：US3890540A
公开(公告)日：1975-06-17
申请号：US44382574
申请日：1974-02-19
申请人： JOHN OTT LAB INC
发明人： OTT HENRY WHITFIELD
IPC分类号： H05B41/19 , H05B41/04
CPC分类号： H05B41/19 , Y10S315/05
摘要： A system providing flickerless operation of a gaseous discharge lamp utilizes a DC voltage applied across the lamp electrodes. Low starting voltage and power consumption are obtained by applying an AC voltage across a grounded conductor member and adjacent lamp electrodes.
摘要翻译：提供气体放电灯的无闪烁操作的系统利用施加在灯电极两端的DC电压。通过在接地导体构件和相邻的灯电极之间施加交流电压来获得低启动电压和功率消耗。

5. 发明授权

US3885150A Shielded luminaire 失效
标题翻译：屏蔽灯具
公开(公告)号：US3885150A
公开(公告)日：1975-05-20
申请号：US42125373
申请日：1973-12-03
申请人： JOHN OTT LAB
发明人： OTT JOHN NASH
IPC分类号： F21V11/06 , F21V23/00 , F21V25/00
CPC分类号： F21V23/00 , F21V11/06 , F21V25/00
摘要： An improved radiation shielded luminaire utilizing gas discharge lamps. Shielding of radio frequency radiation is provided by a grounded superimposed screen and louver assembly. Additional shielding around the cathode area of the lamp shields radiation in the frequency ranges of x-ray and infrared radiation.
摘要翻译：采用气体放电灯的改进的辐射屏蔽灯具。射频辐射屏蔽由接地叠加屏幕和百叶窗组件提供。围绕灯的阴极区域的附加屏蔽在x射线和红外辐射的频率范围内屏蔽辐射。

6. 发明申请

US20070122989A1 EPITAXIAL AND POLYCRYSTALLINE GROWTH OF SI1-X-YGEXCY AND SI1-YCY ALLOY LAYERS ON SI BY UHV-CVD 有权
标题翻译：通过特高压CVD对SI1-X-YGEXCY和SI1-YCY合金层的外延和多晶生长
公开(公告)号：US20070122989A1
公开(公告)日：2007-05-31
申请号：US11618770
申请日：2006-12-30
申请人： Jack Chu , Basanth Jaqannathan , Alfred Grill , Bernard Meyerson , John Ott
发明人： Jack Chu , Basanth Jaqannathan , Alfred Grill , Bernard Meyerson , John Ott
IPC分类号： H01L29/00 , H01L21/331
CPC分类号： C23C16/325 , C23C16/32 , C30B25/02 , C30B29/52 , H01L21/02381 , H01L21/02447 , H01L21/0245 , H01L21/02505 , H01L21/02529 , H01L21/02532 , H01L21/02694 , Y10T428/12674
摘要： A method and apparatus for depositing single crystal, epitaxial films of silicon carbon and silicon germanium carbon on a plurality of substrates in a hot wall, isothermal UHV-CVD system is described. In particular, a multiple wafer low temperature growth technique in the range from 350° C. to 750° C. is described for incorporating carbon epitaxially in Si and SiGe films with very abrupt and well defined junctions, but without any associated oxygen background contamination. Preferably, these epitaxial SiC and SiGeC films are in-situ doped p- or n-type and with the presence of low concentration of carbon
摘要翻译：描述了一种用于在热壁，等温UHV-CVD系统中在多个基板上沉积单晶，硅碳和硅锗碳外延膜的方法和装置。特别地，描述了在350℃至750℃的范围内的多晶片低温生长技术，用于在Si和SiGe膜中外延引入碳，其具有非常突然且明确限定的结，但没有任何相关的氧背景污染。优选地，这些外延SiC和SiGeC膜是原位掺杂的p型或n型，并且存在低浓度的碳<20 20 -3 -3，生长的p型或n型掺杂物分布可以承受炉退火至850℃的温度和快速热退火温度至1000℃

7. 发明授权

US2225230A Velocipede 失效
公开(公告)号：US2225230A
公开(公告)日：1940-12-17
申请号：US31610340
申请日：1940-01-19
申请人： JOHN OTT HENRY
发明人： JOHN OTT HENRY
IPC分类号： B62B11/00
CPC分类号： B62M1/12 , B62K9/02 , B62M1/38

8. 发明授权

US09820794B2 Devices for killing tumor cells and related systems and methods 有权
公开(公告)号：US09820794B2
公开(公告)日：2017-11-21
申请号：US13988243
申请日：2011-11-21
申请人： Mark John Ott , Troy J. Orr
发明人： Mark John Ott , Troy J. Orr
IPC分类号： A61B18/08 , A61B18/02 , A61B18/18 , A61B18/14 , A61B18/12 , A61N7/02 , A61B90/30 , A61B90/00 , A61B42/00
CPC分类号： A61B18/02 , A61B18/08 , A61B18/12 , A61B18/14 , A61B18/1815 , A61B42/00 , A61B90/30 , A61B90/361 , A61N7/02
摘要： Various devices, systems, and methods are capable of killing tumor cells by delivering cell-disrupting agents into a tumor in an inward direction from a peripheral border about the tumor. In some examples, a covering that includes one or more emissive elements encompasses at least a portion of a tumor such that the emissive element is directed inwardly toward the tumor so as to be able to introduce a cell-disrupting agent into the tumor. In further examples, the covering is incorporated into a glove.

9. 发明申请

US20080057684A1 METHOD FOR FABRICATING LOW-DEFECT-DENSITY CHANGED ORIENTATION Si 失效
标题翻译：用于制造低密度变化方位的方法Si
公开(公告)号：US20080057684A1
公开(公告)日：2008-03-06
申请号：US11873928
申请日：2007-10-17
申请人： Joel de Souza , Keith Fogel , John Ott , Devendra Sadana , Katherine Saenger
发明人： Joel de Souza , Keith Fogel , John Ott , Devendra Sadana , Katherine Saenger
IPC分类号： H01L21/425
CPC分类号： H01L21/26506 , H01L21/2022
摘要： The present invention provides a method for forming low-defect density changed-orientation Si by amorphization/templated recrystallization (ATR) processes in which regions of Si having a first crystal orientation are amorphized by ion implantation and then recrystallized into the orientation of a template layer having a different orientation. More generally, the invention relates to the high temperature annealing conditions needed to eliminate the defects remaining in Si-containing single crystal semiconductor materials formed by ion-implant-induced amorphization and templated recrystallization from a layer whose orientation may be the same or different from the amorphous layer's original orientation. The key component of the inventive method is a thermal treatment for minutes to hours in the the temperature range 1250-1330° C. to remove the defects remaining after the initial recrystallization anneal. The invention also provides a low-defect density changed-orientation Si formed by ATR for use in hybrid orientation substrates.
摘要翻译：本发明提供一种通过非晶化/模板化再结晶（ATR）工艺形成低缺陷密度变化取向Si的方法，其中具有第一晶体取向的Si区域通过离子注入而非晶化，然后再结晶成模板层的取向具有不同的方向。更一般地，本发明涉及消除由离子注入诱导的非晶化形成的含Si单晶半导体材料中剩余的缺陷所需的高温退火条件和从取向可以相同或不同的层的模板化再结晶非晶层的原始方向。本发明方法的关键组分是在1250-1330℃的温度范围内进行数分钟至数小时的热处理，以去除在初始再结晶退火之后残留的缺陷。本发明还提供了一种用于混合取向基板的ATR形成的低缺陷密度变化取向Si。

10. 发明申请

US20060154442A1 Quasi-hydrophobic Si-Si wafer bonding using hydrophilic Si surfaces and dissolution of interfacial bonding oxide 有权
标题翻译：使用亲水硅表面的准疏水Si-Si晶片结合和界面结合氧化物的溶解
公开(公告)号：US20060154442A1
公开(公告)日：2006-07-13
申请号：US11031165
申请日：2005-01-07
申请人： Joel de Souza , John Ott , Alexander Reznicek , Devendra Sadana , Katherine Saenger
发明人： Joel de Souza , John Ott , Alexander Reznicek , Devendra Sadana , Katherine Saenger
IPC分类号： H01L21/46
CPC分类号： H01L21/187 , H01L21/76251
摘要： The present invention provides a method for removing or reducing the thickness of ultrathin interfacial oxides remaining at Si—Si interfaces after silicon wafer bonding. In particular, the invention provides a method for removing ultrathin interfacial oxides remaining after hydrophilic Si—Si wafer bonding to create bonded Si—Si interfaces having properties comparable to those achieved with hydrophobic bonding. Interfacial oxide layers of order of about 2 to about 3 nm are dissolved away by high temperature annealing, for example, an anneal at 1300°-1330° C. for 1-5 hours. The inventive method is used to best advantage when the Si surfaces at the bonded interface have different surface orientations, for example, when a Si surface having a (100) orientation is bonded to a Si surface having a (110) orientation. In a more general aspect of the invention, the similar annealing processes may be used to remove undesired material disposed at a bonded interface of two silicon-containing semiconductor materials. The two silicon-containing semiconductor materials may be the same or different in surface crystal orientation, microstructure (single-crystal, polycrystalline, or amorphous), and composition.
摘要翻译：本发明提供一种在硅晶片接合之后去除或减少残留在Si-Si界面处的超薄界面氧化物的厚度的方法。特别地，本发明提供了一种去除在亲水性Si-Si晶片接合之后残留的超薄界面氧化物以产生具有与通过疏水性接合实现的性能相当的特性的结合Si-Si界面的方法。约2至约3nm的界面氧化物层通过高温退火（例如1300°-1330℃退火1-5小时）被溶解掉。当粘合界面处的Si表面具有不同的表面取向时，例如当具有（100）取向的Si表面被结合到具有（110）取向的Si表面时，本发明的方法被用于最好的优点。在本发明的更一般的方面中，类似的退火工艺可用于去除设置在两个含硅半导体材料的键合界面处的不期望的材料。两种含硅半导体材料在表面晶体取向，微结构（单晶，多晶或无定形）和组成上可以相同或不同。

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