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1. 发明授权

US09154117B2 Pulse generation in dual supply systems 有权
标题翻译：双电源系统中的脉冲发生
公开(公告)号：US09154117B2
公开(公告)日：2015-10-06
申请号：US13787530
申请日：2013-03-06
申请人： QUALCOMM Incorporated
发明人： Changho Jung , Nishith Desai , Rakesh Vattikonda
IPC分类号： H03K3/00 , H03K3/356
CPC分类号： H03K3/356104
摘要： Various apparatuses and methods are disclosed. The system describes a pulse generator comprising a first stage configured to be powered by a first voltage; and a second stage configured to be powered by a second voltage different from the first voltage, wherein the second stage is further configured to generate a pulse in response to an input to the first stage comprising a trigger and feedback from the second stage.
摘要翻译：公开了各种装置和方法。该系统描述了脉冲发生器，其包括被配置为由第一电压供电的第一级; 以及第二级，其被配置为由不同于所述第一电压的第二电压供电，其中所述第二级还被配置为响应于包括来自所述第二级的触发和来自所述第一级的输入而产生脉冲。

2. 发明授权

US08934278B2 Hybrid ternary content addressable memory 有权
标题翻译：混合三元内容可寻址内存
公开(公告)号：US08934278B2
公开(公告)日：2015-01-13
申请号：US13730487
申请日：2012-12-28
申请人： QUALCOMM Incorporated
发明人： Rakesh Vattikonda , Nishith Desai , ChangHo Jung , Sei Seung Yoon , Esin Terzioglu
IPC分类号： G11C15/04 , G11C15/00
CPC分类号： G11C15/00 , G11C15/04
摘要： A method within a hybrid ternary content addressable memory (TCAM) includes comparing a first portion of a search word to a first portion of a stored word in a first TCAM stage. The method further includes interfacing an output of the first TCAM stage to an input of the second TCAM stage. The method also includes comparing a second portion of the search word to a second portion of the stored word in a second TCAM stage when the first portion of the search word matches the first portion of the stored word. The first TCAM stage is different from the second TCAM stage.
摘要翻译：混合三元内容可寻址存储器（TCAM）内的方法包括将搜索词的第一部分与第一TCAM级中的存储字的第一部分进行比较。该方法还包括将第一TCAM级的输出与第二TCAM级的输入进行接口。该方法还包括当搜索词的第一部分与存储的单词的第一部分匹配时，在第二TCAM阶段中将搜索词的第二部分与所存储的单词的第二部分进行比较。第一个TCAM阶段与第二个TCAM阶段不同。

3. 发明申请

US20140219039A1 WRITE DRIVER FOR WRITE ASSISTANCE IN MEMORY DEVICE 有权
标题翻译：用于存储器件中的写入辅助的写驱动器
公开(公告)号：US20140219039A1
公开(公告)日：2014-08-07
申请号：US13760988
申请日：2013-02-06
申请人： QUALCOMM INCORPORATED
发明人： Changho Jung , Nishith Desai , Rakesh Vattikonda
IPC分类号： G11C7/12
CPC分类号： G11C7/12 , G11C5/14 , G11C7/00 , G11C8/08 , G11C11/4085 , G11C11/419
摘要： A write assist driver circuit is provided that assists a memory cell (e.g., volatile memory bit cell) in write operations to keep the voltage at the memory core sufficiently high for correct write operations, even when the supply voltage is lowered. The write assist driver circuit may be configured to provide a memory supply voltage VddM to a bit cell core during a standby mode of operation. In a write mode of operation, the write assist driver circuit may provide a lowered memory supply voltage VddMlower to the bit cell core as well as to at least one of the local write bitline (lwbl) and local write bitline bar (lwblb). Additionally, the write assist driver circuit may also provide a periphery supply voltage VddP to a local write wordline (lwwl), where VddP≧VddM>VddMlower.
摘要翻译：提供一种写辅助驱动器电路，即使当电源电压降低时，也可以在写入操作中帮助存储器单元（例如，易失性存储器位单元）来保持存储器核心处的电压足够高以用于正确的写入操作。写辅助驱动器电路可以被配置为在待机操作模式期间向位单元核提供存储器电源电压VddM。在写入操作模式中，写入辅助驱动器电路可以向位单元核心以及本地写入位线（lwbl）和本地写入位线条（lwblb）中的至少一个提供降低的存储器电源电压VddMlower。此外，写辅助驱动器电路还可以向本地写入字线（lww1）提供外围电源电压VddP，其中VddP≥VddM> VddMlower。

4. 发明申请

US20150029782A1 WIDE RANGE MULTIPORT BITCELL 有权
标题翻译：宽范围多点比特
公开(公告)号：US20150029782A1
公开(公告)日：2015-01-29
申请号：US13953473
申请日：2013-07-29
申请人： QUALCOMM Incorporated
发明人： Changho Jung , Rakesh Vattikonda , Nishith Desai , Sei Seung Yoon
IPC分类号： G11C11/419
CPC分类号： G11C11/419 , G11C8/16
摘要： A multiport bitcell including a pair of cross-coupled inverters is provided with increased write speed and enhanced operating voltage range by the selective isolation of a first one of the cross-coupled inverters from a power supply and ground during a write operation. The write operation occurs through a write port that includes a transmission gate configured to couple a first node driven by the first cross-coupled inverter to a write bit line. A remaining second cross-coupled inverter in the bitcell is configured to drive a second node that couples to a plurality of read ports.
摘要翻译：包括一对交叉耦合的反相器的多端口位单元通过在写入操作期间从电源和接地中选择性隔离交叉耦合的反相器中的第一个而提供增加的写入速度和增强的工作电压范围。写入操作通过写入端口发生，该写入端口包括被配置为将由第一交叉耦合的反相器驱动的第一节点耦合到写入位线的传输门极。位单元中的剩余的第二交叉耦合反相器被配置为驱动耦合到多个读端口的第二节点。

5. 发明申请

US20140185348A1 HYBRID TERNARY CONTENT ADDRESSABLE MEMORY 有权
标题翻译：混合内容可寻址记忆
公开(公告)号：US20140185348A1
公开(公告)日：2014-07-03
申请号：US13730487
申请日：2012-12-28
申请人： QUALCOMM INCORPORATED
发明人： Rakesh Vattikonda , Nishith Desai , ChangHo Jung , Sei Seung Yoon , Esin Terzioglu
IPC分类号： G11C15/00
CPC分类号： G11C15/00 , G11C15/04
摘要： A method within a hybrid ternary content addressable memory (TCAM) includes comparing a first portion of a search word to a first portion of a stored word in a first TCAM stage. The method further includes interfacing an output of the first TCAM stage to an input of the second TCAM stage. The method also includes comparing a second portion of the search word to a second portion of the stored word in a second TCAM stage when the first portion of the search word matches the first portion of the stored word. The first TCAM stage is different from the second TCAM stage.
摘要翻译：混合三元内容可寻址存储器（TCAM）内的方法包括将搜索词的第一部分与第一TCAM级中的存储字的第一部分进行比较。该方法还包括将第一TCAM级的输出与第二TCAM级的输入进行接口。该方法还包括当搜索词的第一部分与存储的单词的第一部分匹配时，在第二TCAM阶段中将搜索词的第二部分与所存储的单词的第二部分进行比较。第一个TCAM阶段与第二个TCAM阶段不同。

6. 发明申请

US20140177310A1 PSEUDO-NOR CELL FOR TERNARY CONTENT ADDRESSABLE MEMORY 有权
标题翻译：用于三次内容可寻址存储器的PSEUDO-NORCELL
公开(公告)号：US20140177310A1
公开(公告)日：2014-06-26
申请号：US13727494
申请日：2012-12-26
申请人： QUALCOMM INCORPORATED
发明人： Rakesh Vattikonda , Nishith Desai , ChangHo Jung
IPC分类号： G11C15/00
CPC分类号： G11C15/04
摘要： A method within a ternary content addressable memory (TCAM) includes receiving a match line output from a previous TCAM stage at a gate of a pull-up transistor of a current TCAM stage and at a gate of a pull-down transistor of the current TCAM stage. The method sets a match line bar at the current TCAM stage to a low value, via the pull-down transistor, when the match line output from the previous TCAM stage indicates a mismatch. The method also sets the match line bar at the current TCAM stage to a high value, via the pull-up transistor, when the match line output from the previous TCAM stage indicates a match.
摘要翻译：三元内容可寻址存储器（TCAM）内的方法包括从当前TCAM级的上拉晶体管的栅极处和当前TCAM的下拉晶体管的栅极处接收来自先前TCAM级的匹配线输出阶段。当从前一个TCAM级输出的匹配线指示不匹配时，该方法通过下拉晶体管将当前TCAM级的匹配线条设置为低值。当从前一个TCAM级输出的匹配线指示匹配时，该方法还通过上拉晶体管将当前TCAM级的匹配线条设置为高值。

7. 发明授权

US08958226B2 Static NAND cell for ternary content addressable memory (TCAM) 有权
标题翻译：用于三元内容可寻址存储器（TCAM）的静态NAND单元
公开(公告)号：US08958226B2
公开(公告)日：2015-02-17
申请号：US13730524
申请日：2012-12-28
申请人： Qualcomm Incorporated
发明人： Esin Terzioglu , Nishith Desai , Rakesh Vattikonda , ChangHo Jung , Sei Seung Yoon
IPC分类号： G11C15/04 , G11C15/00
CPC分类号： G11C15/04 , G11C15/00 , G11C15/043 , G11C15/046
摘要： A static, ternary content addressable memory (TCAM) includes a key cell and a mask cell coupled to intermediate match lines. The key cell is coupled to a first pull-down transistor and a first pull-up transistor. The mask cell is coupled to a second pull-down transistor and a second pull-up transistor. The first pull-down transistor and second pull-down transistor are connected in parallel and the first pull-up transistor and second pull-up transistor are connected in series. A match line output is also coupled to the first pull-down transistor and second pull-down transistor and further coupled to the first pull-up transistor and second pull-up transistor.
摘要翻译：静态三元内容可寻址存储器（TCAM）包括密钥单元和耦合到中间匹配行的掩码单元。关键单元耦合到第一下拉晶体管和第一上拉晶体管。掩模单元耦合到第二下拉晶体管和第二上拉晶体管。第一下拉晶体管和第二下拉晶体管并联连接，第一上拉晶体管和第二上拉晶体管串联连接。匹配线输出还耦合到第一下拉晶体管和第二下拉晶体管，并且还耦合到第一上拉晶体管和第二上拉晶体管。

8. 发明申请

US20140355365A1 PULSE GENERATOR 审中-公开
标题翻译：脉冲发生器
公开(公告)号：US20140355365A1
公开(公告)日：2014-12-04
申请号：US13910078
申请日：2013-06-04
申请人： QUALCOMM Incorporated
发明人： Changho Jung , Nishith Desai , Chulmin Jung
IPC分类号： H03K3/037 , G11C7/22
CPC分类号： G11C7/222 , G11C8/08
摘要： Various circuits and methods of operating circuits are disclosed. A circuit may include a pulse generator and a latch having an output configured to trigger the pulse generator, wherein the latch is configured to be set by an input signal and reset by feedback from the pulse generator. A method may include resetting a latch using feedback from a pulse generator by setting a latch using an input signal, triggering a pulse generator using an output from the latch, and resetting the latch using feedback from the pulse generator.
摘要翻译：公开了各种电路和操作电路的方法。电路可以包括脉冲发生器和具有被配置为触发脉冲发生器的输出的锁存器，其中锁存器被配置为由输入信号设置并通过来自脉冲发生器的反馈进行复位。方法可以包括使用来自脉冲发生器的反馈来使用来自脉冲发生器的反馈来重置锁存器，通过使用输入信号设置锁存器，使用来自锁存器的输出触发脉冲发生器，以及使用来自脉冲发生器的反馈来复位锁存器。

9. 发明授权

US08891273B2 Pseudo-NOR cell for ternary content addressable memory 有权
标题翻译：用于三进制内容可寻址存储器的伪NOR单元
公开(公告)号：US08891273B2
公开(公告)日：2014-11-18
申请号：US13727494
申请日：2012-12-26
申请人： QUALCOMM Incorporated
发明人： Rakesh Vattikonda , Nishith Desai , Changho Jung
IPC分类号： G11C15/00 , G11C15/04
CPC分类号： G11C15/04
摘要： A method within a ternary content addressable memory (TCAM) includes receiving a match line output from a previous TCAM stage at a gate of a pull-up transistor of a current TCAM stage and at a gate of a pull-down transistor of the current TCAM stage. The method sets a match line bar at the current TCAM stage to a low value, via the pull-down transistor, when the match line output from the previous TCAM stage indicates a mismatch. The method also sets the match line bar at the current TCAM stage to a high value, via the pull-up transistor, when the match line output from the previous TCAM stage indicates a match.
摘要翻译：三元内容可寻址存储器（TCAM）内的方法包括从当前TCAM级的上拉晶体管的栅极处和当前TCAM的下拉晶体管的栅极处接收来自先前TCAM级的匹配线输出阶段。当从前一个TCAM级输出的匹配线指示不匹配时，该方法通过下拉晶体管将当前TCAM级的匹配线条设置为低值。当从前一个TCAM级输出的匹配线指示匹配时，该方法还通过上拉晶体管将当前TCAM级的匹配线条设置为高值。

10. 发明申请

US20140269112A1 APPARATUS AND METHOD FOR WRITING DATA TO MEMORY ARRAY CIRCUITS 有权
标题翻译：将数据写入存储阵列电路的装置和方法
公开(公告)号：US20140269112A1
公开(公告)日：2014-09-18
申请号：US13863989
申请日：2013-04-16
申请人： QUALCOMM Incorporated
发明人： Chulmin Jung , Changho Jung , Sei Seung Yoon , Rakesh Vattikonda , Nishith Desai
IPC分类号： G11C7/12
CPC分类号： G11C7/12 , G11C7/1084 , G11C7/1096 , G11C11/419
摘要： A write driver for a memory circuit includes a control circuit configured to: operate a first push-pull driver to generate a first drive signal in a first voltage domain at a first node based on an input signal in a second domain and in response to a mode select signal being in a first mode, wherein the first drive signal is at a same logic level as the input signal; operate a second push-pull driver to generate a second drive signal in the first voltage domain at a second node based on the input signal and in response to the mode select signal being in the first mode, wherein the second drive signal is at a complement logic level with respect to the input signal; and operate the first and second push-pull drivers to float the first and second nodes in response to the mode select signal being in a second mode.
摘要翻译：用于存储器电路的写驱动器包括控制电路，该控制电路被配置为：基于第二域中的输入信号，并响应于第一推挽驱动器响应于第一推挽驱动器，在第一节点处的第一电压域中产生第一驱动信号模式选择信号处于第一模式，其中第一驱动信号处于与输入信号相同的逻辑电平; 操作第二推挽驱动器以基于输入信号在第二节点处的第一电压域中产生第二驱动信号，并且响应于模式选择信号处于第一模式，其中第二驱动信号为补码相对于输入信号的逻辑电平; 并且响应于所述模式选择信号处于第二模式，操作所述第一和第二推挽驱动器使所述第一和第二节点浮动。

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