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1. 发明授权

US09082481B2 Static NAND cell for ternary content addressable memory (TCAM) 有权
公开(公告)号：US09082481B2
公开(公告)日：2015-07-14
申请号：US14503861
申请日：2014-10-01
申请人： QUALCOMM Incorporated
发明人： Esin Terzioglu , Nishith Desai , Rakesh Vattikonda , ChangHo Jung , Sei Seung Yoon
IPC分类号： G11C15/04 , G11C15/00
CPC分类号： G11C15/04 , G11C15/00 , G11C15/043 , G11C15/046
摘要： A static, ternary content addressable memory (TCAM) includes a key cell and a mask cell coupled to intermediate match lines. The key cell is coupled to a first pull-down transistor and a first pull-up transistor. The mask cell is coupled to a second pull-down transistor and a second pull-up transistor. The first pull-down transistor and second pull-down transistor are connected in parallel and the first pull-up transistor and second pull-up transistor are connected in series. A match line output is also coupled to the first pull-down transistor and second pull-down transistor and further coupled to the first pull-up transistor and second pull-up transistor.

2. 发明申请

US20140185349A1 STATIC NAND CELL FOR TERNARY CONTENT ADDRESSABLE MEMORY (TCAM) 有权
标题翻译：用于内部可寻址存储器（TCAM）的静态NAND单元
公开(公告)号：US20140185349A1
公开(公告)日：2014-07-03
申请号：US13730524
申请日：2012-12-28
申请人： QUALCOMM INCORPORATED
发明人： Esin Terzioglu , Nishith Desai , Rakesh Vattikonda , ChangHo Jung , Sei Seung Yoon
IPC分类号： G11C15/04
CPC分类号： G11C15/04 , G11C15/00 , G11C15/043 , G11C15/046
摘要： A static, ternary content addressable memory (TCAM) includes a key cell and a mask cell coupled to intermediate match lines. The key cell is coupled to a first pull-down transistor and a first pull-up transistor. The mask cell is coupled to a second pull-down transistor and a second pull-up transistor. The first pull-down transistor and second pull-down transistor are connected in parallel and the first pull-up transistor and second pull-up transistor are connected in series. A match line output is also coupled to the first pull-down transistor and second pull-down transistor and further coupled to the first pull-up transistor and second pull-up transistor.
摘要翻译：静态三元内容可寻址存储器（TCAM）包括密钥单元和耦合到中间匹配行的掩码单元。关键单元耦合到第一下拉晶体管和第一上拉晶体管。掩模单元耦合到第二下拉晶体管和第二上拉晶体管。第一下拉晶体管和第二下拉晶体管并联连接，第一上拉晶体管和第二上拉晶体管串联连接。匹配线输出还耦合到第一下拉晶体管和第二下拉晶体管，并且还耦合到第一上拉晶体管和第二上拉晶体管。

3. 发明申请

US20150085554A1 STATIC NAND CELL FOR TERNARY CONTENT ADDRESSABLE MEMORY (TCAM) 有权
标题翻译：用于内部可寻址存储器（TCAM）的静态NAND单元
公开(公告)号：US20150085554A1
公开(公告)日：2015-03-26
申请号：US14503861
申请日：2014-10-01
申请人： QUALCOMM Incorporated
发明人： Esin Terzioglu , Nishith Desai , Rakesh Vattikonda , ChangHo Jung , Sei Seung Yoon
IPC分类号： G11C15/04
CPC分类号： G11C15/04 , G11C15/00 , G11C15/043 , G11C15/046
摘要： A static, ternary content addressable memory (TCAM) includes a key cell and a mask cell coupled to intermediate match lines. The key cell is coupled to a first pull-down transistor and a first pull-up transistor. The mask cell is coupled to a second pull-down transistor and a second pull-up transistor. The first pull-down transistor and second pull-down transistor are connected in parallel and the first pull-up transistor and second pull-up transistor are connected in series. A match line output is also coupled to the first pull-down transistor and second pull-down transistor and further coupled to the first pull-up transistor and second pull-up transistor.
摘要翻译：静态三元内容可寻址存储器（TCAM）包括密钥单元和耦合到中间匹配行的掩码单元。关键单元耦合到第一下拉晶体管和第一上拉晶体管。掩模单元耦合到第二下拉晶体管和第二上拉晶体管。第一下拉晶体管和第二下拉晶体管并联连接，第一上拉晶体管和第二上拉晶体管串联连接。匹配线输出还耦合到第一下拉晶体管和第二下拉晶体管，并且还耦合到第一上拉晶体管和第二上拉晶体管。

4. 发明申请

US20140185348A1 HYBRID TERNARY CONTENT ADDRESSABLE MEMORY 有权
标题翻译：混合内容可寻址记忆
公开(公告)号：US20140185348A1
公开(公告)日：2014-07-03
申请号：US13730487
申请日：2012-12-28
申请人： QUALCOMM INCORPORATED
发明人： Rakesh Vattikonda , Nishith Desai , ChangHo Jung , Sei Seung Yoon , Esin Terzioglu
IPC分类号： G11C15/00
CPC分类号： G11C15/00 , G11C15/04
摘要： A method within a hybrid ternary content addressable memory (TCAM) includes comparing a first portion of a search word to a first portion of a stored word in a first TCAM stage. The method further includes interfacing an output of the first TCAM stage to an input of the second TCAM stage. The method also includes comparing a second portion of the search word to a second portion of the stored word in a second TCAM stage when the first portion of the search word matches the first portion of the stored word. The first TCAM stage is different from the second TCAM stage.
摘要翻译：混合三元内容可寻址存储器（TCAM）内的方法包括将搜索词的第一部分与第一TCAM级中的存储字的第一部分进行比较。该方法还包括将第一TCAM级的输出与第二TCAM级的输入进行接口。该方法还包括当搜索词的第一部分与存储的单词的第一部分匹配时，在第二TCAM阶段中将搜索词的第二部分与所存储的单词的第二部分进行比较。第一个TCAM阶段与第二个TCAM阶段不同。

5. 发明申请

US20140177310A1 PSEUDO-NOR CELL FOR TERNARY CONTENT ADDRESSABLE MEMORY 有权
标题翻译：用于三次内容可寻址存储器的PSEUDO-NORCELL
公开(公告)号：US20140177310A1
公开(公告)日：2014-06-26
申请号：US13727494
申请日：2012-12-26
申请人： QUALCOMM INCORPORATED
发明人： Rakesh Vattikonda , Nishith Desai , ChangHo Jung
IPC分类号： G11C15/00
CPC分类号： G11C15/04
摘要： A method within a ternary content addressable memory (TCAM) includes receiving a match line output from a previous TCAM stage at a gate of a pull-up transistor of a current TCAM stage and at a gate of a pull-down transistor of the current TCAM stage. The method sets a match line bar at the current TCAM stage to a low value, via the pull-down transistor, when the match line output from the previous TCAM stage indicates a mismatch. The method also sets the match line bar at the current TCAM stage to a high value, via the pull-up transistor, when the match line output from the previous TCAM stage indicates a match.
摘要翻译：三元内容可寻址存储器（TCAM）内的方法包括从当前TCAM级的上拉晶体管的栅极处和当前TCAM的下拉晶体管的栅极处接收来自先前TCAM级的匹配线输出阶段。当从前一个TCAM级输出的匹配线指示不匹配时，该方法通过下拉晶体管将当前TCAM级的匹配线条设置为低值。当从前一个TCAM级输出的匹配线指示匹配时，该方法还通过上拉晶体管将当前TCAM级的匹配线条设置为高值。

6. 发明授权

US08958226B2 Static NAND cell for ternary content addressable memory (TCAM) 有权
标题翻译：用于三元内容可寻址存储器（TCAM）的静态NAND单元
公开(公告)号：US08958226B2
公开(公告)日：2015-02-17
申请号：US13730524
申请日：2012-12-28
申请人： Qualcomm Incorporated
发明人： Esin Terzioglu , Nishith Desai , Rakesh Vattikonda , ChangHo Jung , Sei Seung Yoon
IPC分类号： G11C15/04 , G11C15/00
CPC分类号： G11C15/04 , G11C15/00 , G11C15/043 , G11C15/046
摘要： A static, ternary content addressable memory (TCAM) includes a key cell and a mask cell coupled to intermediate match lines. The key cell is coupled to a first pull-down transistor and a first pull-up transistor. The mask cell is coupled to a second pull-down transistor and a second pull-up transistor. The first pull-down transistor and second pull-down transistor are connected in parallel and the first pull-up transistor and second pull-up transistor are connected in series. A match line output is also coupled to the first pull-down transistor and second pull-down transistor and further coupled to the first pull-up transistor and second pull-up transistor.
摘要翻译：静态三元内容可寻址存储器（TCAM）包括密钥单元和耦合到中间匹配行的掩码单元。关键单元耦合到第一下拉晶体管和第一上拉晶体管。掩模单元耦合到第二下拉晶体管和第二上拉晶体管。第一下拉晶体管和第二下拉晶体管并联连接，第一上拉晶体管和第二上拉晶体管串联连接。匹配线输出还耦合到第一下拉晶体管和第二下拉晶体管，并且还耦合到第一上拉晶体管和第二上拉晶体管。

7. 发明授权

US08934278B2 Hybrid ternary content addressable memory 有权
标题翻译：混合三元内容可寻址内存
公开(公告)号：US08934278B2
公开(公告)日：2015-01-13
申请号：US13730487
申请日：2012-12-28
申请人： QUALCOMM Incorporated
发明人： Rakesh Vattikonda , Nishith Desai , ChangHo Jung , Sei Seung Yoon , Esin Terzioglu
IPC分类号： G11C15/04 , G11C15/00
CPC分类号： G11C15/00 , G11C15/04
摘要： A method within a hybrid ternary content addressable memory (TCAM) includes comparing a first portion of a search word to a first portion of a stored word in a first TCAM stage. The method further includes interfacing an output of the first TCAM stage to an input of the second TCAM stage. The method also includes comparing a second portion of the search word to a second portion of the stored word in a second TCAM stage when the first portion of the search word matches the first portion of the stored word. The first TCAM stage is different from the second TCAM stage.
摘要翻译：混合三元内容可寻址存储器（TCAM）内的方法包括将搜索词的第一部分与第一TCAM级中的存储字的第一部分进行比较。该方法还包括将第一TCAM级的输出与第二TCAM级的输入进行接口。该方法还包括当搜索词的第一部分与存储的单词的第一部分匹配时，在第二TCAM阶段中将搜索词的第二部分与所存储的单词的第二部分进行比较。第一个TCAM阶段与第二个TCAM阶段不同。

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