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    • 3. 发明申请
    • BENT NANOWIRES AND RELATED PROBING OF SPECIES
    • BENT NANOWIRES和相关物种的探索
    • US20160282303A1
    • 2016-09-29
    • US15047267
    • 2016-02-18
    • President and Fellows of Harvard College
    • Charles M. LieberBozhi TianPing XieThomas J. KempaItzhaq Cohen-KarniQuan QingXiaojie Duan
    • G01N27/414H01L51/00H01L29/06H01L21/02
    • G01N27/4146B82Y10/00B82Y15/00G01N33/48728H01L21/02603H01L29/045H01L29/0665H01L29/0669H01L51/0048
    • The present invention generally relates to nanoscale devices and methods, including bent nanowires and other bent nanoscale objects, and in particular, the ability to probe cells with nanoscale objects. In some aspects, nanoscale objects, including nanowires, are provided that facilitate cell probing, e.g. nanowires that are surface modified such that cells can fuse with the nanowires. Devices including nanoscale objects are provided that allow small or large scale (e.g., multiplexed) probing of cells, and related methods of making such nanoscale objects and devices, and methods of investigating cells, are provided by certain embodiments of the invention. In a related set of embodiments, the present invention is generally related to bent nanowires and other bent nanoscale objects. For instance, in one aspect, the present invention is generally related to a semiconductor nanoscale wire having at least one kink. The semiconductor nanoscale wire may be formed out of any suitable semiconductor, e.g., Si, CdS, Ge, or the like. In some embodiments, a kink in the semiconductor nanoscale wire may be at an angle of about 120° or a multiple thereof. Yet other aspects of the invention are generally directed to methods of using such nanoscale wires, kits involving such nanoscale wires, devices involving such nanoscale wires, or the like.
    • 本发明一般涉及纳米级器件和方法,包括弯曲的纳米线和其他弯曲的纳米尺度物体,特别是涉及用纳米尺度物体探测细胞的能力。 在一些方面,提供纳米级物体,包括纳米线,其促进细胞探测,例如, 表面改性的纳米线使得电池可以与纳米线熔合。 提供包括纳米尺度物体的装置,其通过本发明的某些实施例提供允许细胞的小规模(例如,多路复用)探测,以及制造这种纳米级物体和装置的相关方法以及调查细胞的方法。 在相关的一组实施例中,本发明通常涉及弯曲的纳米线和其它弯曲的纳米尺度物体。 例如,一方面,本发明通常涉及具有至少一个扭结的半导体纳米级线。 半导体纳米线可以由任何合适的半导体形成,例如Si,CdS,Ge等。 在一些实施例中,半导体纳米尺度线中的扭结可以是大约120°的角度或其倍数。 本发明的其它方面通常涉及使用这种纳米级线材的方法,涉及这种纳米线材的套件,涉及这种纳米级线材的装置等。