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1. 发明授权

US07807225B2 High density plasma non-stoichiometric SiOxNy films 有权
标题翻译：高密度等离子体非化学计量的SiOxNy薄膜
公开(公告)号：US07807225B2
公开(公告)日：2010-10-05
申请号：US11698623
申请日：2007-01-26
申请人： Pooran Chandra Joshi , Apostolos T. Voutsas , John W. Hartzell
发明人： Pooran Chandra Joshi , Apostolos T. Voutsas , John W. Hartzell
IPC分类号： C23C16/00
CPC分类号： G02B1/10 , C23C16/308 , C23C16/509 , G02B1/11
摘要： A high-density plasma method is provided for forming a SiOXNY thin-film. The method provides a substrate and introduces a silicon (Si) precursor. A thin-film is deposited overlying the substrate, using a high density (HD) plasma-enhanced chemical vapor deposition (PECVD) process. As a result, a SiOXNY thin-film is formed, where (X+Y 0). The SiOXNY thin-film can be stoichiometric or non-stoichiometric. The SiOXNY thin-film can be graded, meaning the values of X and Y vary with the thickness of the SiOXNY thin-film. Further, the process enables the in-situ deposition of a SiOXNY thin-film multilayer structure, where the different layers may be stoichiometric, non-stoichiometric, graded, and combinations of the above-mentioned types of SiOXNY thin-films.
摘要翻译：提供了用于形成SiOXNY薄膜的高密度等离子体方法。该方法提供衬底并引入硅（Si）前体。使用高密度（HD）等离子体增强化学气相沉积（PECVD）工艺将薄膜沉积在衬底上。结果，形成SiOXNY薄膜，其中（X + Y <2和Y> 0）。 SiOXNY薄膜可以是化学计量的或非化学计量的。 SiOXNY薄膜可以分级，这意味着X和Y的值随SiOXNY薄膜的厚度而变化。此外，该方法能够实现SiOXNY薄膜多层结构的原位沉积，其中不同的层可以是化学计量的，非化学计量的，分级的，以及上述类型的SiOXNY薄膜的组合。

2. 发明授权

US07723913B2 Graded junction silicon nanocrystal embedded silicon oxide electroluminescence device 有权
标题翻译：分级结硅纳米晶体嵌入式氧化硅电致发光器件
公开(公告)号：US07723913B2
公开(公告)日：2010-05-25
申请号：US12168771
申请日：2008-07-07
申请人： Vincenzo Casasanta , Apostolos T. Voutsas , Pooran Chandra Joshi
发明人： Vincenzo Casasanta , Apostolos T. Voutsas , Pooran Chandra Joshi
IPC分类号： H01L21/00 , H01L21/20 , H01J1/62 , H01J9/24
CPC分类号： C23C16/30 , C23C16/24 , C23C16/401 , C23C16/505 , C23C16/56 , H01L21/02532 , H01L21/02595
摘要： A silicon (Si) nanocrystal embedded Si oxide electroluminescence (EL) device and associated fabrication process are presented. The method provides a substrate bottom electrode, and forms a plurality of Si nanocrystal embedded SiOx film layers overlying the bottom electrode, where X is less than 2. Each SiOx film layer has a Si excess concentration in a range of about 5 to 30%. The outside film layers sandwich an inner film layer having a lower concentration of Si nanocrystals. Alternately stated, the outside Si nanocrystal embedded SiOx film layers have a higher electrical conductivity than a sandwiched inner film layer. A transparent top electrode is formed over the plurality of Si nanocrystal embedded SiOx film layers. The plurality of Si nanocrystal embedded SiOx film layers are deposited using a high density plasma-enhanced chemical vapor deposition (HD PECVD) process. The HD PECVD process initially deposits SiOx film layers, which are subsequently annealed.
摘要翻译：介绍了一种硅（Si）纳米晶体内置Si氧化物电致发光（EL）器件及其制造工艺。该方法提供衬底底部电极，并且形成多个覆盖底部电极的Si纳米晶体的嵌入的SiO x膜层，其中X小于2.每个SiO x膜层的Si过量浓度在约5-30％的范围内。外层膜层叠具有较低浓度的Si纳米晶体的内膜层。或者说，外部Si纳米晶体埋入的SiOx膜层具有比夹层内膜层更高的导电性。在多个Si纳米晶体嵌入的SiOx膜层上形成透明顶部电极。使用高密度等离子体增强化学气相沉积（HD PECVD）工艺沉积多个Si纳米晶体嵌入的SiOx膜层。 HD PECVD工艺首先沉积SiO x膜层，随后退火。

3. 发明授权

US07723781B2 Vertical thin-film transistor with enhanced gate oxide 有权
标题翻译：具有增强栅极氧化物的垂直薄膜晶体管
公开(公告)号：US07723781B2
公开(公告)日：2010-05-25
申请号：US12108333
申请日：2008-04-23
申请人： Pooran Chandra Joshi , Apostolos T. Voutsas , John W. Hartzell
发明人： Pooran Chandra Joshi , Apostolos T. Voutsas , John W. Hartzell
IPC分类号： H01L29/78
CPC分类号： H01L29/78642 , C23C16/24 , C23C16/45523 , C23C16/509 , H01L21/02164 , H01L21/0234 , H01L21/049 , H01L21/31612 , H01L29/66666 , H01L29/6675
摘要： A method is provided for forming a low-temperature vertical gate insulator in a vertical thin-film transistor (V-TFT) fabrication process. The method comprises: forming a gate, having vertical sidewalls and a top surface, overlying a substrate insulation layer; depositing a silicon oxide thin-film gate insulator overlying the gate; plasma oxidizing the gate insulator at a temperature of less than 400° C., using a high-density plasma source; forming a first source/drain region overlying the gate top surface; forming a second source/drain region overlying the substrate insulation layer, adjacent a first gate sidewall; and, forming a channel region overlying the first gate sidewall, in the gate insulator interposed between the first and second source/drain regions. When the silicon oxide thin-film gate insulator is deposited overlying the gate a Si oxide layer, a low temperature deposition process can be used, so that a step-coverage of greater than 65% can be obtained.
摘要翻译：提供一种用于在垂直薄膜晶体管（V-TFT）制造工艺中形成低温垂直栅极绝缘体的方法。该方法包括：形成具有垂直侧壁和顶表面的栅极，覆盖衬底绝缘层; 沉积覆盖栅极的氧化硅薄膜栅极绝缘体; 使用高密度等离子体源在低于400℃的温度下等离子体氧化栅极绝缘体; 形成覆盖所述栅极顶表面的第一源极/漏极区域; 在第一栅极侧壁附近形成覆盖衬底绝缘层的第二源极/漏极区域; 以及在位于第一和第二源极/漏极区之间的栅极绝缘体中形成覆盖第一栅极侧壁的沟道区。当氧化硅薄膜栅极绝缘体沉积在栅极上覆盖Si氧化物层时，可以使用低温沉积工艺，从而可以获得大于65％的阶梯覆盖率。

4. 发明申请

US20080224164A1 Light Emitting Device with a Nanocrystalline Silicon Embedded Insulator Film 有权
标题翻译：具有纳米晶硅嵌入式绝缘体膜的发光器件
公开(公告)号：US20080224164A1
公开(公告)日：2008-09-18
申请号：US12126430
申请日：2008-05-23
申请人： Jiandong Huang , Pooran Chandra Joshi , Apostolos T. Voutsas , Hao Zhang
发明人： Jiandong Huang , Pooran Chandra Joshi , Apostolos T. Voutsas , Hao Zhang
IPC分类号： H01L33/00 , H01L21/28 , H01J1/63
CPC分类号： C23C16/30 , C23C16/401 , C23C16/402 , C23C16/505 , C23C16/56 , H01L21/02164 , H01L21/02274 , H01L21/31608 , H01L33/005 , H01L33/18 , H01L33/34
摘要： A light emitting device using a silicon (Si) nanocrystalline Si insulating film is presented with an associated fabrication method. The method provides a doped semiconductor or metal bottom electrode. Using a high density plasma-enhanced chemical vapor deposition (HDPECVD) process, a Si insulator film is deposited overlying the semiconductor electrode, having a thickness in a range of 30 to 200 nanometers (nm). For example, the film may be SiOx, where X is less than 2, Si3Nx, where X is less than 4, or SiCx, where X is less than 1. The Si insulating film is annealed, and as a result, Si nanocrystals are formed in the film. Then, a transparent metal electrode is formed overlying the Si insulator film. An annealed Si nanocrystalline SiOx film has a turn-on voltage of less than 20 volts, as defined with respect to a surface emission power of greater than 0.03 watt per square meter.
摘要翻译：使用硅（Si）纳米晶体Si绝缘膜的发光器件具有相关的制造方法。该方法提供掺杂半导体或金属底电极。使用高密度等离子体增强化学气相沉积（HDPECVD）工艺，淀积厚度在30至200纳米（nm）范围内的半导体电极上的Si绝缘体膜。例如，膜可以是SiO x，其中X小于2，Si 3 N x，其中X小于4，或SiC x，其中X小于1.Si绝缘膜退火，结果Si纳米晶体为在电影中形成。然后，形成覆盖Si绝缘膜的透明金属电极。退火的Si纳米晶SiO x膜具有小于20伏特的导通电压，如关于大于0.03瓦/平方米的表面发射功率所限定的。

5. 发明授权

US09222169B2 Silicon oxide-nitride-carbide thin-film with embedded nanocrystalline semiconductor particles 有权
标题翻译：具有嵌入式纳米晶半导体颗粒的氧化硅 - 氮化碳 - 碳化物薄膜
公开(公告)号：US09222169B2
公开(公告)日：2015-12-29
申请号：US12467969
申请日：2009-05-18
申请人： Pooran Chandra Joshi , Apostolos T. Voutsas
发明人： Pooran Chandra Joshi , Apostolos T. Voutsas
IPC分类号： H01L21/20 , C23C16/30 , C23C16/509 , C23C16/56 , H01L21/02 , H01L21/316 , H01L33/42
CPC分类号： C23C16/30 , C23C16/5096 , C23C16/56 , H01L21/02126 , H01L21/02274 , H01L21/02321 , H01L21/02337 , H01L21/0234 , H01L21/02532 , H01L21/02601 , H01L21/0262 , H01L21/31608 , H01L33/42
摘要： A solar call is provided along with a method for forming a semiconductor nanocrystalline silicon insulating thin-film with a tunable bandgap. The method provides a substrate and introduces a silicon (Si) source gas with at least one of the following source gases: germanium (Ge), oxygen, nitrogen, or carbon into a high density (HD) plasma-enhanced chemical vapor deposition (PECVD) process. A SiOxNyCz thin-film embedded with a nanocrystalline semiconductor material is deposited overlying the substrate, where x, y, z≧0, and the semiconductor material is Si, Ge, or a combination of Si and Ge. As a result, a bandgap is formed in the SiOxNyCz thin-film, in the range of about 1.9 to 3.0 electron volts (eV). Typically, the semiconductor nanoparticles have a size in a range of 1 to 20 nm.
摘要翻译：提供太阳能呼叫以及用于形成具有可调带隙的半导体纳米晶硅绝缘薄膜的方法。该方法提供了一种衬底，并将硅（Si）源气体与以下源气体中的至少一种：锗（Ge），氧，氮或碳引入高密度（HD）等离子体增强化学气相沉积（PECVD））过程。嵌入了纳米晶体半导体材料的SiO x N y C z薄膜沉积在衬底上，其中x，y，z≥0，半导体材料是Si，Ge或Si和Ge的组合。结果，在SiOxNyCz薄膜中形成的带隙在约1.9〜3.0电子伏特（eV）的范围内。通常，半导体纳米颗粒的尺寸在1至20nm的范围内。

6. 发明授权

US07998884B2 Method of forming a light emitting device with a nanocrystalline silicon embedded insulator film 有权
标题翻译：用纳米晶硅嵌入绝缘膜形成发光器件的方法
公开(公告)号：US07998884B2
公开(公告)日：2011-08-16
申请号：US12126430
申请日：2008-05-23
申请人： Jiandong Huang , Pooran Chandra Joshi , Apostolos T. Voutsas , Hao Zhang
发明人： Jiandong Huang , Pooran Chandra Joshi , Apostolos T. Voutsas , Hao Zhang
IPC分类号： H01L21/469
CPC分类号： C23C16/30 , C23C16/401 , C23C16/402 , C23C16/505 , C23C16/56 , H01L21/02164 , H01L21/02274 , H01L21/31608 , H01L33/005 , H01L33/18 , H01L33/34
摘要： A light emitting device using a silicon (Si) nanocrystalline Si insulating film is presented with an associated fabrication method. The method provides a doped semiconductor or metal bottom electrode. Using a high density plasma-enhanced chemical vapor deposition (HDPECVD) process, a Si insulator film is deposited overlying the semiconductor electrode, having a thickness in a range of 30 to 200 nanometers (nm). For example, the film may be SiOx, where X is less than 2, Si3Nx, where X is less than 4, or SiCx, where X is less than 1. The Si insulating film is annealed, and as a result, Si nanocrystals are formed in the film. Then, a transparent metal electrode is formed overlying the Si insulator film. An annealed Si nanocrystalline SiOx film has a turn-on voltage of less than 20 volts, as defined with respect to a surface emission power of greater than 0.03 watt per square meter.
摘要翻译：使用硅（Si）纳米晶体Si绝缘膜的发光器件具有相关的制造方法。该方法提供掺杂半导体或金属底电极。使用高密度等离子体增强化学气相沉积（HDPECVD）工艺，淀积厚度在30至200纳米（nm）范围内的半导体电极上的Si绝缘体膜。例如，膜可以是SiO x，其中X小于2，Si 3 N x，其中X小于4，或SiC x，其中X小于1.Si绝缘膜退火，结果Si纳米晶体为在电影中形成。然后，形成覆盖Si绝缘膜的透明金属电极。退火的Si纳米晶SiO x膜具有小于20伏特的导通电压，如关于大于0.03瓦/平方米的表面发射功率所限定的。

7. 发明申请

US20090294885A1 Silicon Nanoparticle Embedded Insulating Film Photodetector 审中-公开
标题翻译：硅纳米颗粒嵌入式绝缘膜光电检测器
公开(公告)号：US20090294885A1
公开(公告)日：2009-12-03
申请号：US12129434
申请日：2008-05-29
申请人： Pooran Chandra Joshi , Hao Zhang , Apostolos T. Voutsas
发明人： Pooran Chandra Joshi , Hao Zhang , Apostolos T. Voutsas
IPC分类号： H01L31/00 , H01L21/00
CPC分类号： H01L31/0352 , C23C16/308 , C23C16/505 , H01L31/1085 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A photodetector is provided with a method for fabricating a semiconductor nanoparticle embedded Si insulating film for photo-detection applications. The method provides a bottom electrode and introduces a semiconductor precursor and hydrogen. A thin-film is deposited overlying the substrate, using a high density (HD) plasma-enhanced chemical vapor deposition (PECVD) process. As a result, a semiconductor nanoparticle embedded Si insulating film is formed, where the Si insulating film includes either N or C elements. For example, the Si insulating film may be a non-stoichiometric SiOXNY thin-film, where (X+Y 0), or SiCX, where X
摘要翻译：光电检测器具有用于制造用于光检测应用的半导体纳米颗粒嵌入的Si绝缘膜的方法。该方法提供底电极并引入半导体前体和氢。使用高密度（HD）等离子体增强化学气相沉积（PECVD）工艺将薄膜沉积在衬底上。结果，形成半导体纳米颗粒嵌入的Si绝缘膜，其中Si绝缘膜包括N或C元素。例如，Si绝缘膜可以是非化学计量的SiOXNY薄膜，其中（X + Y <2和Y> 0）或SiCX，其中X <1。半导体纳米颗粒是Si或Ge。在形成半导体纳米颗粒嵌入的Si绝缘膜之后，进行退火处理。

8. 发明申请

US20090217968A1 Silicon Oxide-Nitride-Carbide with Embedded Nanocrystalline Semiconductor Particles 有权
标题翻译：具有嵌入式纳米晶半导体颗粒的氧化硅 - 氮化物 - 碳化物
公开(公告)号：US20090217968A1
公开(公告)日：2009-09-03
申请号：US12467969
申请日：2009-05-18
申请人： Pooran Chandra Joshi , Apostolos T. Voutsas
发明人： Pooran Chandra Joshi , Apostolos T. Voutsas
IPC分类号： H01L31/042 , H01L21/205 , H01L31/028
CPC分类号： C23C16/30 , C23C16/5096 , C23C16/56 , H01L21/02126 , H01L21/02274 , H01L21/02321 , H01L21/02337 , H01L21/0234 , H01L21/02532 , H01L21/02601 , H01L21/0262 , H01L21/31608 , H01L33/42
摘要： A solar call is provided along with a method for forming a semiconductor nanocrystalline silicon insulating thin-film with a tunable bandgap. The method provides a substrate and introduces a silicon (Si) source gas with at least one of the following source gases: germanium (Ge), oxygen, nitrogen, or carbon into a high density (HD) plasma-enhanced chemical vapor deposition (PECVD) process. A SiOxNyCz thin-film embedded with a nanocrystalline semiconductor material is deposited overlying the substrate, where x, y, z≧0, and the semiconductor material is Si, Ge, or a combination of Si and Ge. As a result, a bandgap is formed in the SiOxNyCz thin-film, in the range of about 1.9 to 3.0 electron volts (eV). Typically, the semiconductor nanoparticles have a size in a range of 1 to 20 nm.
摘要翻译：提供太阳能呼叫以及用于形成具有可调带隙的半导体纳米晶硅绝缘薄膜的方法。该方法提供了一种衬底，并将硅（Si）源气体与以下源气体中的至少一种：锗（Ge），氧，氮或碳引入高密度（HD）等离子体增强化学气相沉积（PECVD））过程。嵌入纳米晶体半导体材料的SiOxNyCz薄膜沉积在衬底上，其中x，y，z> = 0，半导体材料是Si，Ge或Si和Ge的组合。结果，在SiOxNyCz薄膜中形成的带隙在约1.9〜3.0电子伏特（eV）的范围内。通常，半导体纳米颗粒的尺寸在1至20nm的范围内。

9. 发明申请

US20090058266A1 Fabrication of a Semiconductor Nanoparticle Embedded Insulating Film Luminescence Device 失效
标题翻译：半导体纳米颗粒嵌入式绝缘膜发光器件的制造
公开(公告)号：US20090058266A1
公开(公告)日：2009-03-05
申请号：US12267698
申请日：2008-11-10
申请人： Pooran Chandra Joshi , Hao Zhang , Jiandong Huang , Apostolos T. Voutsas
发明人： Pooran Chandra Joshi , Hao Zhang , Jiandong Huang , Apostolos T. Voutsas
IPC分类号： H01J1/63 , B05D5/12
CPC分类号： C23C16/30 , C23C16/5096 , C23C16/56
摘要： A method is provided for fabricating a semiconductor nanoparticle embedded Si insulating film for short wavelength luminescence applications. The method provides a bottom electrode, and deposits a semiconductor nanoparticle embedded Si insulating film, including the element of N, O, or C, overlying the bottom electrode. After annealing, a semiconductor nanoparticle embedded Si insulating film has a peak photoluminescence (PL) at a wavelength in the range of 475 to 750 nanometers.
摘要翻译：提供一种用于制造用于短波长发光应用的半导体纳米颗粒嵌入式Si绝缘膜的方法。该方法提供底部电极，并沉积包含覆盖底部电极的N，O或C元素的半导体纳米颗粒嵌入的Si绝缘膜。在退火之后，半导体纳米颗粒嵌入的Si绝缘膜在475至750纳米的波长范围内具有峰值光致发光（PL）。

10. 发明授权

US07902088B2 High quantum efficiency silicon nanoparticle embedded SiOXNY luminescence device 失效
标题翻译：高量子效率硅纳米颗粒嵌入式SiOXNY发光器件
公开(公告)号：US07902088B2
公开(公告)日：2011-03-08
申请号：US12249911
申请日：2008-10-11
申请人： Pooran Chandra Joshi , Jiandong Huang , Apostolos T. Voutsas
发明人： Pooran Chandra Joshi , Jiandong Huang , Apostolos T. Voutsas
IPC分类号： H01L21/31 , H01L21/469 , H01J1/62 , H01J63/04
CPC分类号： C23C16/308 , B82Y20/00 , C23C16/28 , C23C16/505 , H01L31/0352 , H01L31/035236
摘要： A method is provided for fabricating a high quantum efficiency silicon (Si) nanoparticle embedded SiOXNY film for luminescence (electroluminescence—EL and photoluminescence—PL) applications. The method provides a bottom electrode, and deposits a Si nanoparticle embedded non-stoichiometric SiOXNY film, where (X+Y 0), overlying the bottom electrode. The Si nanoparticle embedded SiOXNY film is annealed. The annealed Si nanoparticle embedded SiOXNY film has an extinction coefficient (k) of less than about 0.001 as measured at 632 nanometers (nm), and a PL quantum efficiency (PLQE) of greater than 20%.
摘要翻译：提供了一种用于制造用于发光（电致发光 - EL和光致发光 - PL）应用的高量子效率硅（Si）纳米颗粒嵌入的SiOXNY膜的方法。该方法提供底部电极，并沉积嵌入非化学计量的SiOXNY膜的Si纳米颗粒，其中（X + Y <2和Y> 0）覆盖在底部电极上。 Si纳米颗粒嵌入的SiOXNY膜退火。退火的Si纳米颗粒嵌入的SiOXNY膜具有在632纳米（nm）下测量的小于约0.001的消光系数（k），并且PL量子效率（PLQE）大于20％。

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