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1. 发明申请

US20140021373A1 BEAMLINE ELECTRODE VOLTAGE MODULATION FOR ION BEAM GLITCH RECOVERY 审中-公开
标题翻译：光束电极电压调制用于离子束玻璃回收
公开(公告)号：US20140021373A1
公开(公告)日：2014-01-23
申请号：US13555910
申请日：2012-07-23
申请人： Piotr Lubicki , Christopher Leavitt , Timothy Miller , Bon-Woong Koo
发明人： Piotr Lubicki , Christopher Leavitt , Timothy Miller , Bon-Woong Koo
IPC分类号： G21K5/02
CPC分类号： H01J37/3171 , H01J37/026 , H01J37/241 , H01J37/304 , H01J2237/24564
摘要： An ion implantation system and method are disclosed in which glitches in voltage are minimized by use of a modulated power supply system in the implanter. The modulated power supply system includes a traditional power supply and a control unit associated with each power supply, where the control unit is used to isolate the power supply from an electrode if a glitch or arc is detected. The control unit then restores connectivity after the glitch condition has been rectified.
摘要翻译：公开了一种离子注入系统和方法，其中通过使用注入机中的调制电源系统来最小化电压中的毛刺。调制电源系统包括传统电源和与每个电源相关联的控制单元，其中如果检测到毛刺或电弧，则使用控制单元将电源与电极隔离。然后，控制单元在毛刺状态被修正之后恢复连通性。

2. 发明申请

US20120003760A1 GLITCH CONTROL DURING IMPLANTATION 有权
标题翻译：植入过程中的控制
公开(公告)号：US20120003760A1
公开(公告)日：2012-01-05
申请号：US13160573
申请日：2011-06-15
申请人： Piotr Lubicki , Bon-Woong Koo
发明人： Piotr Lubicki , Bon-Woong Koo
IPC分类号： H01L21/66 , G21K5/00
CPC分类号： H01J37/241 , H01J37/243 , H01J37/248 , H01J37/3171 , H01J37/32412 , H01J37/32935 , H01J2237/0206 , H01J2237/24535
摘要： An ion implantation system and method are disclosed in which glitches in voltage are minimized by modifications to the power system of the implanter. These power supply modifications include faster response time, output filtering, improved glitch detection and removal of voltage blanking. By minimizing glitches, it is possible to produce solar cells with acceptable dose uniformity without having to pause the scan each time a voltage glitch is detected. For example, by shortening the duration of a voltage to about 20-40 milliseconds, dose uniformity within about 3% can be maintained.
摘要翻译：公开了一种离子注入系统和方法，其中通过对注入机的电力系统的修改来最小化电压中的毛刺。这些电源修改包括更快的响应时间，输出滤波，改进的毛刺检测和消除电压消隐。通过最小化毛刺，可以在每次检测到电压毛刺时不必暂停扫描，生产具有可接受的剂量均匀性的太阳能电池。例如，通过将电压的持续时间缩短到约20-40毫秒，可以保持约3％内的剂量均匀性。

3. 发明申请

US20140106571A1 BIASING SYSTEM FOR A PLASMA PROCESSING APPARATUS 有权
标题翻译：用于等离子体加工设备的偏心系统
公开(公告)号：US20140106571A1
公开(公告)日：2014-04-17
申请号：US13649159
申请日：2012-10-11
申请人： Bon-Woong Koo , Richard M. White
发明人： Bon-Woong Koo , Richard M. White
IPC分类号： H05H1/24 , H01L21/31 , H01L21/302 , B44C1/22 , C23C16/503
CPC分类号： H01J37/32862 , H01J37/32422 , H01J37/32706
摘要： A plasma processing apparatus includes a process chamber housing defining a process chamber, a platen positioned in the process chamber for supporting a workpiece, a source configured to generate plasma in the process chamber, and a biasing system. The biasing system is configured to bias the platen to attract ions from the plasma towards the workpiece during a first processing time interval and configured to bias the platen to repel ions from the platen towards interior surfaces of the process chamber housing during a cleaning time interval. The cleaning time interval is separate from the first processing time interval and occurring after the first processing time interval.
摘要翻译：等离子体处理装置包括限定处理室的处理室壳体，位于处理室中的用于支撑工件的压板，被配置为在处理室中产生等离子体的源和偏置系统。偏置系统被配置为偏压压板以在第一处理时间间隔期间从等离子体离开工件以吸引离子，并且构造成在清洁时间间隔期间偏压压板以从压板排向离开处理室壳体的内表面。清洁时间间隔与第一处理时间间隔分开，并且在第一处理时间间隔之后发生。

4. 发明授权

US08698107B2 Technique and apparatus for monitoring ion mass, energy, and angle in processing systems 有权
标题翻译：用于监控处理系统中离子质量，能量和角度的技术和设备
公开(公告)号：US08698107B2
公开(公告)日：2014-04-15
申请号：US12987950
申请日：2011-01-10
申请人： Ludovic Godet , Christopher J. Leavitt , Bon-Woong Koo , Anthony Renau
发明人： Ludovic Godet , Christopher J. Leavitt , Bon-Woong Koo , Anthony Renau
IPC分类号： H01J37/30
CPC分类号： H01J49/40 , H01J37/244 , H01J37/3171 , H01J37/32935 , H01J49/04 , H01J2237/24528 , H01J2237/24542
摘要： A time-of-flight (TOF) ion sensor system for monitoring an angular distribution of ion species having an ion energy and incident on a substrate includes a drift tube wherein the ion sensor system is configured to vary an angle of the drift tube with respect to a plane of the substrate. The drift tube may have a first end configured to receive a pulse of ions from the ion species wherein heavier ions and lighter ions of the pulse of ions arrive in packets at a second end of the drift tube. An ion detector may be disposed at the second end of the ion sensor, wherein the ion detector is configured to detect the packets of ions derived from the pulse of ions and corresponding to respective different ion masses.
摘要翻译：用于监测具有离子能并入射在衬底上的离子种类的角分布的飞行时间（TOF）离子传感器系统包括漂移管，其中离子传感器系统被配置为相对于漂移管的角度改变到基板的平面。漂移管可以具有构造成从离子物质接收离子脉冲的第一端，其中离子脉冲的较重离子和较轻离子在漂移管的第二端处分组到达。离子检测器可以设置在离子传感器的第二端处，其中离子检测器被配置为检测源自离子脉冲的离子的分组并且对应于各个不同的离子质量。

5. 发明授权

US08604449B2 Glitch control during implantation 有权
标题翻译：植入期间毛刺控制
公开(公告)号：US08604449B2
公开(公告)日：2013-12-10
申请号：US13160573
申请日：2011-06-15
申请人： Piotr R. Lubicki , Bon-Woong Koo
发明人： Piotr R. Lubicki , Bon-Woong Koo
IPC分类号： G21G5/00
CPC分类号： H01J37/241 , H01J37/243 , H01J37/248 , H01J37/3171 , H01J37/32412 , H01J37/32935 , H01J2237/0206 , H01J2237/24535
摘要： An ion implantation system and method are disclosed in which glitches in voltage are minimized by modifications to the power system of the implanter. These power supply modifications include faster response time, output filtering, improved glitch detection and removal of voltage blanking. By minimizing glitches, it is possible to produce solar cells with acceptable dose uniformity without having to pause the scan each time a voltage glitch is detected. For example, by shortening the duration of a voltage to about 20-40 milliseconds, dose uniformity within about 3% can be maintained.
摘要翻译：公开了一种离子注入系统和方法，其中通过对注入机的电力系统的修改来最小化电压中的毛刺。这些电源修改包括更快的响应时间，输出滤波，改进的毛刺检测和消除电压消隐。通过最小化毛刺，可以在每次检测到电压毛刺时不必暂停扫描，生产具有可接受的剂量均匀性的太阳能电池。例如，通过将电压的持续时间缩短到约20-40毫秒，可以保持约3％内的剂量均匀性。

6. 发明申请

US20110240876A1 APPARATUS FOR CONTROLLING THE TEMPERATURE OF AN RF ION SOURCE WINDOW 失效
标题翻译：用于控制RF离子源窗口温度的装置
公开(公告)号：US20110240876A1
公开(公告)日：2011-10-06
申请号：US12754258
申请日：2010-04-05
申请人： Frank Sinclair , Costel Biloiu , Bon-Woong Koo , Victor Benveniste , Shardul Patel
发明人： Frank Sinclair , Costel Biloiu , Bon-Woong Koo , Victor Benveniste , Shardul Patel
IPC分类号： H01J27/02
CPC分类号： H01J37/32495 , H01J27/16 , H01J37/08 , H01J37/3171 , H01J37/321 , H01J37/32412 , H01J37/32422 , H01J37/32522 , H01J2237/022 , H01J2237/0266 , H01J2237/0817
摘要： An RF ion source utilizing a heating/RF-shielding element for controlling the temperature of an RF window and to act as an RF shielding element for the RF ion source. When the heating/RF shielding element is in a heating mode, it suppresses formation of unwanted deposits on the RF window which negatively impacts the transfer of RF energy from an RF antenna to a plasma chamber. When the heating/RF-shielding element is in a shielding mode, it provides an electrostatic shielding for the RF ion source.
摘要翻译： RF离子源，其利用加热/ RF屏蔽元件来控制RF窗口的温度并用作RF离子源的RF屏蔽元件。当加热/ RF屏蔽元件处于加热模式时，它抑制在RF窗口上形成不需要的沉积物，这对RF能量从RF天线到等离子体室的转移产生负面影响。当加热/ RF屏蔽元件处于屏蔽模式时，它为RF离子源提供静电屏蔽。

7. 发明申请

US20100140077A1 EXCITED GAS INJECTION FOR ION IMPLANT CONTROL 有权
标题翻译：激光注射用于离子植入控制
公开(公告)号：US20100140077A1
公开(公告)日：2010-06-10
申请号：US12328096
申请日：2008-12-04
申请人： Bon-Woong Koo , Victor Benveniste , Christopher A. Rowland , Craig R. Chaney , Frank Sinclair , Neil J. Bassom
发明人： Bon-Woong Koo , Victor Benveniste , Christopher A. Rowland , Craig R. Chaney , Frank Sinclair , Neil J. Bassom
IPC分类号： B01J19/08 , C23C16/513
CPC分类号： H01J27/022 , H01J37/08 , H01J37/3171 , H01J37/32357 , H01J37/32412 , H01J37/32422 , H01J2237/006 , H01J2237/061 , H01J2237/0815 , H01J2237/24514
摘要： An ion source that utilizes exited and/or atomic gas injection is disclosed. In an ion beam application, the source gas can be used directly, as it is traditionally supplied. Alternatively or additionally, the source gas can be altered by passing it through a remote plasma source prior to being introduced to the ion source chamber. This can be used to create excited neutrals, heavy ions, metastable molecules or multiply charged ions. In another embodiment, multiple gasses are used, where one or more of the gasses are passed through a remote plasma generator. In certain embodiments, the gasses are combined in a single plasma generator before being supplied to the ion source chamber. In plasma immersion applications, plasma is injected into the process chamber through one or more additional gas injection locations. These injection locations allow the influx of additional plasma, produced by remote plasma sources external to the process chamber.
摘要翻译：公开了一种利用离子源和/或原子气体注入的离子源。在离子束施加中，源气体可以直接使用，如通常提供的。或者或另外，源气体可以在被引入离子源室之前通过将其通过远程等离子体源来改变。这可以用于产生兴奋的中性粒子，重离子，亚稳分子或多电荷离子。在另一个实施例中，使用多个气体，其中一个或多个气体通过远程等离子体发生器。在某些实施方案中，气体在被提供给离子源室之前组合在单个等离子体发生器中。在等离子体浸渍应用中，通过一个或多个另外的气体注入位置将等离子体注入到处理室中。这些注入位置允许通过处理室外部的远程等离子体源产生的附加等离子体的流入。

8. 发明申请

US20100084980A1 PLASMA UNIFORMITY CONTROL USING BIASED ARRAY 失效
标题翻译：使用偏置阵列的等离子体均匀控制
公开(公告)号：US20100084980A1
公开(公告)日：2010-04-08
申请号：US12244017
申请日：2008-10-02
申请人： Bon-Woong Koo
发明人： Bon-Woong Koo
IPC分类号： H01J7/24 , G21K5/10
CPC分类号： G21K5/02 , C23C14/48 , H01J37/32412 , H01J37/32623 , H01J37/32706
摘要： Apparatus and method for improving the plasma uniformity in a plasma based system are described. The apparatus may include a plurality of electrical conductors, to which one or more types of electrical potentials may be applied. The conductors may be arranged in an array and may preferably be positioned near the plasma. By applying the bias voltages to the various electrically conductors, the plasma can be manipulated. For example, the conductors may extract or confine the electrons in the plasma, thereby locally adjusting the plasma density near the conductors. In the process, uniformity of the plasma density or ion concentration in the plasma may be improved. In a further embodiment, a magnetic field is included in the same direction as the electric field created by the bias voltage so as to better confine the charged particles.
摘要翻译：描述了用于改善基于等离子体的系统中的等离子体均匀性的装置和方法。该装置可以包括可施加一种或多种类型的电位的多个电导体。导体可以排列成阵列，并且优选地位于等离子体附近。通过将偏置电压施加到各种电导体，可以操纵等离子体。例如，导体可以提取或限制等离子体中的电子，从而局部地调节导体附近的等离子体密度。在该过程中，等离子体中的等离子体密度或离子浓度的均匀性可以得到改善。在另一个实施例中，磁场包括在与由偏置电压产生的电场相同的方向上，以便更好地限制带电粒子。

9. 发明授权

US07675730B2 Techniques for detecting wafer charging in a plasma processing system 有权
标题翻译：用于在等离子体处理系统中检测晶片充电的技术
公开(公告)号：US07675730B2
公开(公告)日：2010-03-09
申请号：US11767730
申请日：2007-06-25
申请人： Steven R. Walther , Bon-Woong Koo , Bernard Gregory Lindsay
发明人： Steven R. Walther , Bon-Woong Koo , Bernard Gregory Lindsay
IPC分类号： H01L23/00
CPC分类号： H01J37/3299 , H01J37/32935
摘要： Techniques for detecting wafer charging in a plasma processing system are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for detecting wafer charging in a plasma processing system. The apparatus may comprise a plasma chamber to produce a plasma discharge above a wafer in the plasma chamber. The apparatus may also comprise a biasing circuit to bias the wafer to draw ions from the plasma discharge towards the wafer. The apparatus may further comprise a detection mechanism to detect charge buildup on the wafer by measuring an electric field in one or more designated locations near a top surface of the wafer.
摘要翻译：公开了一种在等离子体处理系统中检测晶片充电的技术。在一个特定的示例性实施例中，这些技术可以被实现为用于在等离子体处理系统中检测晶片充电的装置。该装置可以包括等离子体室，以在等离子体室中的晶片之上产生等离子体放电。该装置还可以包括偏置电路，用于偏置晶片以从离子放电中向离子晶片提取离子。该装置还可以包括检测机构，以通过测量在晶片顶表面附近的一个或多个指定位置的电场来检测晶片上的电荷积累。

10. 发明申请

US20090283670A1 Technique for Monitoring and Controlling A PLasma Process 审中-公开
标题翻译：监测和控制PLasma过程的技术
公开(公告)号：US20090283670A1
公开(公告)日：2009-11-19
申请号：US12272537
申请日：2008-11-18
申请人： Bon-Woong Koo , Ludovic Godet , Vassilis Panayotis Vourloumis , Vikram Singh , Ziwei Fang
发明人： Bon-Woong Koo , Ludovic Godet , Vassilis Panayotis Vourloumis , Vikram Singh , Ziwei Fang
IPC分类号： B01D59/44 , H01J49/00
CPC分类号： H01J37/32422 , H01J37/32935
摘要： A time-of-flight ion sensor for monitoring ion species in a plasma includes a housing. A drift tube is positioned in the housing. An extractor electrode is positioned in the housing at a first end of the drift tube so as to attract ions from the plasma. A plurality of electrodes is positioned at a first end of the drift tube proximate to the extractor electrode. The plurality of electrodes is biased so as to selectively attract ions to enter the drift tube and to drift towards a second end of the drift tube. An ion detector is positioned proximate to the second end of the drift tube. The ion detector detects arrival times associated with the at least the portion of the attracted ions.
摘要翻译：用于监测等离子体中的离子种类的飞行时间离子传感器包括壳体。漂移管位于外壳中。提取器电极位于漂移管的第一端处的壳体中，以便从等离子体吸引离子。多个电极位于漂移管的靠近提取器电极的第一端。多个电极被偏置以选择性地吸引离子进入漂移管并漂移到漂移管的第二端。离子检测器位于漂移管的第二端附近。离子检测器检测与吸引的离子的至少一部分相关联的到达时间。

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