专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07675730B2 Techniques for detecting wafer charging in a plasma processing system 有权
标题翻译：用于在等离子体处理系统中检测晶片充电的技术
公开(公告)号：US07675730B2
公开(公告)日：2010-03-09
申请号：US11767730
申请日：2007-06-25
申请人： Steven R. Walther , Bon-Woong Koo , Bernard Gregory Lindsay
发明人： Steven R. Walther , Bon-Woong Koo , Bernard Gregory Lindsay
IPC分类号： H01L23/00
CPC分类号： H01J37/3299 , H01J37/32935
摘要： Techniques for detecting wafer charging in a plasma processing system are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for detecting wafer charging in a plasma processing system. The apparatus may comprise a plasma chamber to produce a plasma discharge above a wafer in the plasma chamber. The apparatus may also comprise a biasing circuit to bias the wafer to draw ions from the plasma discharge towards the wafer. The apparatus may further comprise a detection mechanism to detect charge buildup on the wafer by measuring an electric field in one or more designated locations near a top surface of the wafer.
摘要翻译：公开了一种在等离子体处理系统中检测晶片充电的技术。在一个特定的示例性实施例中，这些技术可以被实现为用于在等离子体处理系统中检测晶片充电的装置。该装置可以包括等离子体室，以在等离子体室中的晶片之上产生等离子体放电。该装置还可以包括偏置电路，用于偏置晶片以从离子放电中向离子晶片提取离子。该装置还可以包括检测机构，以通过测量在晶片顶表面附近的一个或多个指定位置的电场来检测晶片上的电荷积累。

2. 发明申请

US20080314731A1 TECHNIQUES FOR DETECTING WAFER CHARGING IN A PLASMA PROCESSING SYSTEM 有权
标题翻译：用于检测等离子体处理系统中的波形充电的技术
公开(公告)号：US20080314731A1
公开(公告)日：2008-12-25
申请号：US11767730
申请日：2007-06-25
申请人： Steven R. Walther , Bon-Woong Koo , Bernard Gregory Lindsay
发明人： Steven R. Walther , Bon-Woong Koo , Bernard Gregory Lindsay
IPC分类号： H05F3/00 , B05C11/00
CPC分类号： H01J37/3299 , H01J37/32935
摘要： Techniques for detecting wafer charging in a plasma processing system are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for detecting wafer charging in a plasma processing system. The apparatus may comprise a plasma chamber to produce a plasma discharge above a wafer in the plasma chamber. The apparatus may also comprise a biasing circuit to bias the wafer to draw ions from the plasma discharge towards the wafer. The apparatus may further comprise a detection mechanism to detect charge buildup on the wafer by measuring an electric field in one or more designated locations near a top surface of the wafer.
摘要翻译：公开了一种在等离子体处理系统中检测晶片充电的技术。在一个特定的示例性实施例中，这些技术可以被实现为用于在等离子体处理系统中检测晶片充电的装置。该装置可以包括等离子体室，以在等离子体室中的晶片之上产生等离子体放电。该装置还可以包括偏置电路，用于偏置晶片以从离子放电中向离子晶片提取离子。该装置还可以包括检测机构，以通过测量在晶片顶表面附近的一个或多个指定位置的电场来检测晶片上的电荷积累。

3. 发明申请

US20080160212A1 METHOD AND APPARATUSES FOR PROVIDING ELECTRICAL CONTACT FOR PLASMA PROCESSING APPLICATIONS 审中-公开
标题翻译：用于提供等离子体处理应用的电气接触的方法和装置
公开(公告)号：US20080160212A1
公开(公告)日：2008-07-03
申请号：US11616314
申请日：2006-12-27
申请人： Bon-Woong Koo , Steven R. Walther , Christopher J. Leavitt , Justin Tocco , Sung-Hwan Hyun , Timothy J. Miller , Jay T. Scheuer , Atul Gupta , Vikram Singh , Deven Raj
发明人： Bon-Woong Koo , Steven R. Walther , Christopher J. Leavitt , Justin Tocco , Sung-Hwan Hyun , Timothy J. Miller , Jay T. Scheuer , Atul Gupta , Vikram Singh , Deven Raj
IPC分类号： B28B7/38 , C23C16/00
CPC分类号： H01J37/32706 , H01J37/32623 , H01L21/67011 , H01L21/67069 , H01L21/68714 , H01L21/68735
摘要： A method and apparatuses for providing improved electrical contact to a semiconductor wafer during plasma processing applications are disclosed. In one embodiment, an apparatus includes a wafer platen for supporting the wafer; and a plurality of electrical contact elements, each of the plurality of electrical contact elements are configured to provide a path for supplying a bias voltage from a bias power supply to the wafer on the wafer platen. The plurality of electrical contact elements are also geometrically arranged such that at least one electrical contact element contacts an inner surface region (e.g., region between a center of wafer and a distance approximately half of the radius of the wafer) and at least one electrical contact element contacts an outer annular surface region (e.g., region between an outer edge of wafer and a distance approximately half of the radius of the wafer).
摘要翻译：公开了一种用于在等离子体处理应用期间提供与半导体晶片的改进的电接触的方法和装置。在一个实施例中，一种装置包括用于支撑晶片的晶片台板; 以及多个电接触元件，所述多个电接触元件中的每一个被配置为提供用于将来自偏置电源的偏置电压提供给晶片台板上的晶片的路径。多个电接触元件也被几何地布置成使得至少一个电接触元件接触内表面区域（例如，晶片的中心与晶片的半径的一半的距离）和至少一个电接触元件接触外部环形表面区域（例如，晶片的外边缘之间的区域和晶片的半径的一半的距离）。

4. 发明授权

US07132672B2 Faraday dose and uniformity monitor for plasma based ion implantation 有权
标题翻译：法拉第剂量和均匀度监测器用于等离子体离子注入
公开(公告)号：US07132672B2
公开(公告)日：2006-11-07
申请号：US10817755
申请日：2004-04-02
申请人： Steven R. Walther , Rajesh Dorai , Harold Persing , Jay Scheuer , Bon-Woong Koo , Bjorn O. Pedersen , Chris Leavitt , Timothy Miller
发明人： Steven R. Walther , Rajesh Dorai , Harold Persing , Jay Scheuer , Bon-Woong Koo , Bjorn O. Pedersen , Chris Leavitt , Timothy Miller
IPC分类号： H01J37/244
CPC分类号： H01J37/32963 , H01J37/32935 , H01J37/3299 , H01J2237/24405
摘要： A Faraday dose and uniformity monitor can include a magnetically suppressed annular Faraday cup surrounding a target wafer. A narrow aperture can reduce discharges within Faraday cup opening. The annular Faraday cup can have a continuous cross section to eliminate discharges due to breaks. A plurality of annular Faraday cups at different radii can independently measure current density to monitor changes in plasma uniformity. The magnetic suppression field can be configured to have a very rapid decrease in field strength with distance to minimize plasma and implant perturbations and can include both radial and azimuthal components, or primarily azimuthal components. The azimuthal field component can be generated by multiple vertically oriented magnets of alternating polarity, or by the use of a magnetic field coil. In addition, dose electronics can provide integration of pulsed current at high voltage, and can convert the integrated charge to a series of light pulses coupled optically to a dose controller.
摘要翻译：法拉第剂量和均匀性监测器可以包括围绕目标晶片的磁抑制环形法拉第杯。狭窄的孔径可以减少法拉第杯开口内的排放。环形法拉第杯可以具有连续的横截面，以消除由于断裂引起的排放。多个不同半径的环形法拉第杯可以独立地测量电流密度以监测等离子体均匀性的变化。磁场抑制场可以被配置为具有随着距离的场强非常快速的降低，以使等离子体和植入物扰动最小化，并且可以包括径向和方位角分量，或者主要包括方位角分量。方位角分量可以由交替极性的多个垂直取向的磁体或通过使用磁场线圈来产生。此外，剂量电子学可以提供高电压脉冲电流的集成，并且可以将积分电荷转换成光耦合到剂量控制器的一系列光脉冲。

5. 发明申请

US20140106571A1 BIASING SYSTEM FOR A PLASMA PROCESSING APPARATUS 有权
标题翻译：用于等离子体加工设备的偏心系统
公开(公告)号：US20140106571A1
公开(公告)日：2014-04-17
申请号：US13649159
申请日：2012-10-11
申请人： Bon-Woong Koo , Richard M. White
发明人： Bon-Woong Koo , Richard M. White
IPC分类号： H05H1/24 , H01L21/31 , H01L21/302 , B44C1/22 , C23C16/503
CPC分类号： H01J37/32862 , H01J37/32422 , H01J37/32706
摘要： A plasma processing apparatus includes a process chamber housing defining a process chamber, a platen positioned in the process chamber for supporting a workpiece, a source configured to generate plasma in the process chamber, and a biasing system. The biasing system is configured to bias the platen to attract ions from the plasma towards the workpiece during a first processing time interval and configured to bias the platen to repel ions from the platen towards interior surfaces of the process chamber housing during a cleaning time interval. The cleaning time interval is separate from the first processing time interval and occurring after the first processing time interval.
摘要翻译：等离子体处理装置包括限定处理室的处理室壳体，位于处理室中的用于支撑工件的压板，被配置为在处理室中产生等离子体的源和偏置系统。偏置系统被配置为偏压压板以在第一处理时间间隔期间从等离子体离开工件以吸引离子，并且构造成在清洁时间间隔期间偏压压板以从压板排向离开处理室壳体的内表面。清洁时间间隔与第一处理时间间隔分开，并且在第一处理时间间隔之后发生。

6. 发明授权

US08698107B2 Technique and apparatus for monitoring ion mass, energy, and angle in processing systems 有权
标题翻译：用于监控处理系统中离子质量，能量和角度的技术和设备
公开(公告)号：US08698107B2
公开(公告)日：2014-04-15
申请号：US12987950
申请日：2011-01-10
申请人： Ludovic Godet , Christopher J. Leavitt , Bon-Woong Koo , Anthony Renau
发明人： Ludovic Godet , Christopher J. Leavitt , Bon-Woong Koo , Anthony Renau
IPC分类号： H01J37/30
CPC分类号： H01J49/40 , H01J37/244 , H01J37/3171 , H01J37/32935 , H01J49/04 , H01J2237/24528 , H01J2237/24542
摘要： A time-of-flight (TOF) ion sensor system for monitoring an angular distribution of ion species having an ion energy and incident on a substrate includes a drift tube wherein the ion sensor system is configured to vary an angle of the drift tube with respect to a plane of the substrate. The drift tube may have a first end configured to receive a pulse of ions from the ion species wherein heavier ions and lighter ions of the pulse of ions arrive in packets at a second end of the drift tube. An ion detector may be disposed at the second end of the ion sensor, wherein the ion detector is configured to detect the packets of ions derived from the pulse of ions and corresponding to respective different ion masses.
摘要翻译：用于监测具有离子能并入射在衬底上的离子种类的角分布的飞行时间（TOF）离子传感器系统包括漂移管，其中离子传感器系统被配置为相对于漂移管的角度改变到基板的平面。漂移管可以具有构造成从离子物质接收离子脉冲的第一端，其中离子脉冲的较重离子和较轻离子在漂移管的第二端处分组到达。离子检测器可以设置在离子传感器的第二端处，其中离子检测器被配置为检测源自离子脉冲的离子的分组并且对应于各个不同的离子质量。

7. 发明授权

US08604449B2 Glitch control during implantation 有权
标题翻译：植入期间毛刺控制
公开(公告)号：US08604449B2
公开(公告)日：2013-12-10
申请号：US13160573
申请日：2011-06-15
申请人： Piotr R. Lubicki , Bon-Woong Koo
发明人： Piotr R. Lubicki , Bon-Woong Koo
IPC分类号： G21G5/00
CPC分类号： H01J37/241 , H01J37/243 , H01J37/248 , H01J37/3171 , H01J37/32412 , H01J37/32935 , H01J2237/0206 , H01J2237/24535
摘要： An ion implantation system and method are disclosed in which glitches in voltage are minimized by modifications to the power system of the implanter. These power supply modifications include faster response time, output filtering, improved glitch detection and removal of voltage blanking. By minimizing glitches, it is possible to produce solar cells with acceptable dose uniformity without having to pause the scan each time a voltage glitch is detected. For example, by shortening the duration of a voltage to about 20-40 milliseconds, dose uniformity within about 3% can be maintained.
摘要翻译：公开了一种离子注入系统和方法，其中通过对注入机的电力系统的修改来最小化电压中的毛刺。这些电源修改包括更快的响应时间，输出滤波，改进的毛刺检测和消除电压消隐。通过最小化毛刺，可以在每次检测到电压毛刺时不必暂停扫描，生产具有可接受的剂量均匀性的太阳能电池。例如，通过将电压的持续时间缩短到约20-40毫秒，可以保持约3％内的剂量均匀性。

8. 发明申请

US20110240876A1 APPARATUS FOR CONTROLLING THE TEMPERATURE OF AN RF ION SOURCE WINDOW 失效
标题翻译：用于控制RF离子源窗口温度的装置
公开(公告)号：US20110240876A1
公开(公告)日：2011-10-06
申请号：US12754258
申请日：2010-04-05
申请人： Frank Sinclair , Costel Biloiu , Bon-Woong Koo , Victor Benveniste , Shardul Patel
发明人： Frank Sinclair , Costel Biloiu , Bon-Woong Koo , Victor Benveniste , Shardul Patel
IPC分类号： H01J27/02
CPC分类号： H01J37/32495 , H01J27/16 , H01J37/08 , H01J37/3171 , H01J37/321 , H01J37/32412 , H01J37/32422 , H01J37/32522 , H01J2237/022 , H01J2237/0266 , H01J2237/0817
摘要： An RF ion source utilizing a heating/RF-shielding element for controlling the temperature of an RF window and to act as an RF shielding element for the RF ion source. When the heating/RF shielding element is in a heating mode, it suppresses formation of unwanted deposits on the RF window which negatively impacts the transfer of RF energy from an RF antenna to a plasma chamber. When the heating/RF-shielding element is in a shielding mode, it provides an electrostatic shielding for the RF ion source.
摘要翻译： RF离子源，其利用加热/ RF屏蔽元件来控制RF窗口的温度并用作RF离子源的RF屏蔽元件。当加热/ RF屏蔽元件处于加热模式时，它抑制在RF窗口上形成不需要的沉积物，这对RF能量从RF天线到等离子体室的转移产生负面影响。当加热/ RF屏蔽元件处于屏蔽模式时，它为RF离子源提供静电屏蔽。

9. 发明申请

US20100140077A1 EXCITED GAS INJECTION FOR ION IMPLANT CONTROL 有权
标题翻译：激光注射用于离子植入控制
公开(公告)号：US20100140077A1
公开(公告)日：2010-06-10
申请号：US12328096
申请日：2008-12-04
申请人： Bon-Woong Koo , Victor Benveniste , Christopher A. Rowland , Craig R. Chaney , Frank Sinclair , Neil J. Bassom
发明人： Bon-Woong Koo , Victor Benveniste , Christopher A. Rowland , Craig R. Chaney , Frank Sinclair , Neil J. Bassom
IPC分类号： B01J19/08 , C23C16/513
CPC分类号： H01J27/022 , H01J37/08 , H01J37/3171 , H01J37/32357 , H01J37/32412 , H01J37/32422 , H01J2237/006 , H01J2237/061 , H01J2237/0815 , H01J2237/24514
摘要： An ion source that utilizes exited and/or atomic gas injection is disclosed. In an ion beam application, the source gas can be used directly, as it is traditionally supplied. Alternatively or additionally, the source gas can be altered by passing it through a remote plasma source prior to being introduced to the ion source chamber. This can be used to create excited neutrals, heavy ions, metastable molecules or multiply charged ions. In another embodiment, multiple gasses are used, where one or more of the gasses are passed through a remote plasma generator. In certain embodiments, the gasses are combined in a single plasma generator before being supplied to the ion source chamber. In plasma immersion applications, plasma is injected into the process chamber through one or more additional gas injection locations. These injection locations allow the influx of additional plasma, produced by remote plasma sources external to the process chamber.
摘要翻译：公开了一种利用离子源和/或原子气体注入的离子源。在离子束施加中，源气体可以直接使用，如通常提供的。或者或另外，源气体可以在被引入离子源室之前通过将其通过远程等离子体源来改变。这可以用于产生兴奋的中性粒子，重离子，亚稳分子或多电荷离子。在另一个实施例中，使用多个气体，其中一个或多个气体通过远程等离子体发生器。在某些实施方案中，气体在被提供给离子源室之前组合在单个等离子体发生器中。在等离子体浸渍应用中，通过一个或多个另外的气体注入位置将等离子体注入到处理室中。这些注入位置允许通过处理室外部的远程等离子体源产生的附加等离子体的流入。

10. 发明申请

US20100084980A1 PLASMA UNIFORMITY CONTROL USING BIASED ARRAY 失效
标题翻译：使用偏置阵列的等离子体均匀控制
公开(公告)号：US20100084980A1
公开(公告)日：2010-04-08
申请号：US12244017
申请日：2008-10-02
申请人： Bon-Woong Koo
发明人： Bon-Woong Koo
IPC分类号： H01J7/24 , G21K5/10
CPC分类号： G21K5/02 , C23C14/48 , H01J37/32412 , H01J37/32623 , H01J37/32706
摘要： Apparatus and method for improving the plasma uniformity in a plasma based system are described. The apparatus may include a plurality of electrical conductors, to which one or more types of electrical potentials may be applied. The conductors may be arranged in an array and may preferably be positioned near the plasma. By applying the bias voltages to the various electrically conductors, the plasma can be manipulated. For example, the conductors may extract or confine the electrons in the plasma, thereby locally adjusting the plasma density near the conductors. In the process, uniformity of the plasma density or ion concentration in the plasma may be improved. In a further embodiment, a magnetic field is included in the same direction as the electric field created by the bias voltage so as to better confine the charged particles.
摘要翻译：描述了用于改善基于等离子体的系统中的等离子体均匀性的装置和方法。该装置可以包括可施加一种或多种类型的电位的多个电导体。导体可以排列成阵列，并且优选地位于等离子体附近。通过将偏置电压施加到各种电导体，可以操纵等离子体。例如，导体可以提取或限制等离子体中的电子，从而局部地调节导体附近的等离子体密度。在该过程中，等离子体中的等离子体密度或离子浓度的均匀性可以得到改善。在另一个实施例中，磁场包括在与由偏置电压产生的电场相同的方向上，以便更好地限制带电粒子。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式