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1. 发明申请

US20050202763A1 Multi-function slurry delivery system 审中-公开
标题翻译：多功能浆料输送系统
公开(公告)号：US20050202763A1
公开(公告)日：2005-09-15
申请号：US10797315
申请日：2004-03-09
申请人： Ping-Hsu Chen , Chao-Jung Chang , Jui-Cheng Lo , Yu-Liang Lin , Shang-Ting Tsai , Ping Chuang
发明人： Ping-Hsu Chen , Chao-Jung Chang , Jui-Cheng Lo , Yu-Liang Lin , Shang-Ting Tsai , Ping Chuang
IPC分类号： B24B1/00
CPC分类号： B24B57/02 , B24B37/044
摘要： A method and system for delivering a mixed slurry for use chemical mechanical polishing operation. A first slurry may be mixed with a second slurry to provide a mixed slurry thereof. A flow rate and a mixing ratio associated with the mixed slurry can be controlled to provide an accurate flow rate control and adjustable mixing ratio thereof. The first slurry and the second slurry may be mixed in-line utilizing an in-line mixing mechanism to provide a mixed slurry thereof. Alternatively, the first and second slurries may be pre-mixed utilizing a pre-mixing mechanism to provide a mixed slurry there.
摘要翻译：一种用于输送用于化学机械抛光操作的混合浆料的方法和系统。可以将第一浆料与第二浆料混合以提供其混合浆料。可以控制与混合浆料相关的流速和混合比，以提供精确的流速控制和可调混合比。可以使用在线混合机构将第一浆料和第二浆料在线混合以提供其混合浆料。或者，第一和第二浆料可以使用预混合机构预混合以在其中提供混合浆料。

2. 发明授权

US06884149B2 Method and system for in-situ monitoring of mixing ratio of high selectivity slurry 失效
标题翻译：高选择性浆料混合比的现场监测方法和系统
公开(公告)号：US06884149B2
公开(公告)日：2005-04-26
申请号：US10833720
申请日：2004-04-27
申请人： Shang-Ting Tsai , Ping Chuang , Henry Lo , Chao-Jung Chang , Ping-Hsu Chen , Yu-Liang Lin , Yu-Huei Chen , Ai-Sen Liu , Syun-Ming Jang
发明人： Shang-Ting Tsai , Ping Chuang , Henry Lo , Chao-Jung Chang , Ping-Hsu Chen , Yu-Liang Lin , Yu-Huei Chen , Ai-Sen Liu , Syun-Ming Jang
IPC分类号： B24B37/04 , B24B49/12 , B24B1/00
CPC分类号： B24B57/02 , B24B37/042 , B24B49/12
摘要： A method and system for monitoring the quality of a slurry utilized in a chemical mechanical polishing operation. A slurry is generally delivered through a tubular path during a chemical mechanical polishing operation. A laser light is generally transmitted from a laser light source, such that the laser light comes into contact with the slurry during the chemical mechanical polishing operation. The laser light can then be detected, after the laser light comes into contact with the slurry to thereby monitor the quality of the slurry utilized during the chemical mechanical polishing operation. The laser light that comes into contact with the slurry can be also be utilized to monitor a mixing ratio associated with the slurry.
摘要翻译：一种用于监测在化学机械抛光操作中使用的浆料的质量的方法和系统。在化学机械抛光操作期间，浆料通常通过管状路径输送。激光通常从激光源传输，使得激光在化学机械抛光操作期间与浆料接触。然后可以在激光与浆料接触之后检测激光，从而监测在化学机械抛光操作期间所利用的浆料的质量。与浆料接触的激光也可用于监测与浆料相关的混合比例。

3. 发明授权

US06729935B2 Method and system for in-situ monitoring of mixing ratio of high selectivity slurry 失效
公开(公告)号：US06729935B2
公开(公告)日：2004-05-04
申请号：US10170674
申请日：2002-06-13
申请人： Shang-Ting Tsai , Ping Chuang , Henry Lo , Chao-Jung Chang , Ping-Hsu Chen , Yu-Liang Lin , Yu-Huei Chen , Ai-Sen Liu , Syun-Ming Jang
发明人： Shang-Ting Tsai , Ping Chuang , Henry Lo , Chao-Jung Chang , Ping-Hsu Chen , Yu-Liang Lin , Yu-Huei Chen , Ai-Sen Liu , Syun-Ming Jang
IPC分类号： B24B4900
CPC分类号： B24B57/02 , B24B37/042 , B24B49/12
摘要： A method and system for monitoring the quality of a slurry utilized in a chemical mechanical polishing operation. A slurry is generally delivered through a tubular path during a chemical mechanical polishing operation. A laser light is generally transmitted from a laser light source, such that the laser light comes into contact with the slurry during the chemical mechanical polishing operation. The laser light can then be detected, after the laser light comes into contact with the slurry to thereby monitor the quality of the slurry utilized during the chemical mechanical polishing operation. The laser light that comes into contact with the slurry can be also be utilized to monitor a mixing ratio associated with the slurry.

4. 发明申请

US20050106895A1 Supercritical water application for oxide formation 审中-公开
标题翻译：氧化物形成的超临界水应用
公开(公告)号：US20050106895A1
公开(公告)日：2005-05-19
申请号：US10715326
申请日：2003-11-17
申请人： Yu-Liang Lin , Ping Chuang , Mei-Sheng Zhou
发明人： Yu-Liang Lin , Ping Chuang , Mei-Sheng Zhou
IPC分类号： G06F17/00 , H01L21/31 , H01L21/316 , H01L21/469 , H01L21/76 , H01L21/768
CPC分类号： H01L21/02238 , H01L21/02255 , H01L21/31675 , H01L21/76801
摘要： The present disclosure provides for a method and system for fabricating an insulating layer on a substrate. The method and system provide a fluid to a substrate, wherein the fluid is provided in an aerosol form. The method and system also provides for generating a supercritical process environment proximate to the substrate. The method and system further provides a proximate supercritical process environment having a supercritical process temperature and a supercritical process pressure for altering the fluid, and placing the substrate in contact with the altered fluid, wherein the insulating layer is formed on the substrate by a reaction between the substrate and the fluid.
摘要翻译：本公开提供了用于在基板上制造绝缘层的方法和系统。该方法和系统向基材提供流体，其中流体以气溶胶形式提供。该方法和系统还提供用于生成靠近基底的超临界过程环境。该方法和系统还提供了一种具有超临界过程温度和超临界过程压力的邻近超临界过程环境，用于改变流体，并使衬底与改变的流体接触，其中绝缘层通过基材和流体。

5. 发明申请

US20050186753A1 FIB exposure of alignment marks in MIM technology 审中-公开
标题翻译： MIM技术中FIB曝光对准标记
公开(公告)号：US20050186753A1
公开(公告)日：2005-08-25
申请号：US10786187
申请日：2004-02-25
申请人： Ping-Hsu Chen , Ping Chuang , Mei-Sheng Zhou , Francis Ko , Huxley Lee , Joshua Tseng , Henry Lo
发明人： Ping-Hsu Chen , Ping Chuang , Mei-Sheng Zhou , Francis Ko , Huxley Lee , Joshua Tseng , Henry Lo
IPC分类号： G03F9/00 , H01J37/304 , H01L21/302 , H01L21/461 , H01L21/76 , H01L23/544
CPC分类号： H01L23/544 , G03F9/708 , G03F9/7084 , H01J37/3045 , H01L2223/54453 , H01L2924/0002 , H01L2924/00
摘要： A new and improved method for exposing alignment marks on a substrate by locally cutting through a metal or non-metal layer or layers sequentially deposited on the substrate above the alignment marks, using focused ion beam (FIB) technology. In a preferred embodiment, a method for exposing alignment marks on a substrate can be carried out by first providing a substrate that has multiple alignment marks provided thereon and at least one overlying opaque layer, typically but not necessarily metal, deposited on the substrate above the alignment marks. A focused ion beam is then directed against the overlying opaque layer or layers to cut through the layer or layers and expose the alignment marks on the substrate. A noble gas, preferably argon, is typically used as the ion source for the focused ion beam.
摘要翻译：一种新的和改进的方法，通过使用聚焦离子束（FIB）技术，通过局部切割穿过对准标记上方的基板上的金属或非金属层或层而在基板上曝光对准标记。在优选实施例中，用于在衬底上曝光对准标记的方法可以通过首先提供其上设置有多个对准标记的衬底和沉积在衬底上方的至少一个上覆的不透明层（通常但不一定是金属）对齐标记然后将聚焦离子束定向到上覆的不透明层或层以切穿该层或者暴露衬底上的对准标记。惰性气体，优选氩气通常用作聚焦离子束的离子源。

6. 发明申请

US20050158664A1 Method of integrating post-etching cleaning process with deposition for semiconductor device 审中-公开
标题翻译：将蚀刻后清洗工艺与半导体器件沉积相结合的方法
公开(公告)号：US20050158664A1
公开(公告)日：2005-07-21
申请号：US10760927
申请日：2004-01-20
申请人： Joshua Tseng , Ping Chuang , Hung-Jung Tu , Ching-Ya Wang , Yu-Liang Lin , Henry Lo , Mei-Sheng Zhou
发明人： Joshua Tseng , Ping Chuang , Hung-Jung Tu , Ching-Ya Wang , Yu-Liang Lin , Henry Lo , Mei-Sheng Zhou
IPC分类号： G03F7/00 , G03F7/42 , H01L21/00 , H01L21/311 , H01L21/768 , H01L23/52
CPC分类号： H01L21/76802 , G03F7/422 , G03F7/423 , G03F7/425 , G03F7/426 , H01L21/31116 , H01L21/31133 , H01L21/31144 , H01L21/76877
摘要： A method of integrating a post-etching cleaning process with deposition for a semiconductor device. A substrate having a damascene structure formed by etching a dielectric layer formed thereon using an overlying photoresist mask as an etching mask is provided. A cleaning process is performed by a supercritical fluid to remove the photoresist mask and post-etching by-products. An interconnect layer is formed in-situ in the damascene structure using the supercritical fluid as a reaction medium, wherein the cleaning process and the subsequent interconnect layer formation are performed in one process chamber or in different process chambers of a processing tool.
摘要翻译：将后蚀刻清洗工艺与用于半导体器件的沉积集成的方法。提供具有通过使用覆盖光致抗蚀剂掩模蚀刻形成在其上的介电层作为蚀刻掩模形成的镶嵌结构的基板。通过超临界流体进行清洁处理以除去光致抗蚀剂掩模和后蚀刻副产物。使用超临界流体作为反应介质，在镶嵌结构中原位形成互连层，其中清洁工艺和随后的互连层形成在一个处理室中或在处理工具的不同处理室中进行。

7. 发明申请

US20050130449A1 Method of forming an oxide layer using a mixture of a supercritical state fluid and an oxidizing agent 审中-公开
标题翻译：使用超临界状态流体和氧化剂的混合物形成氧化物层的方法
公开(公告)号：US20050130449A1
公开(公告)日：2005-06-16
申请号：US10797318
申请日：2004-03-10
申请人： Ping Chuang , Yu-Liang Lin , Mei-Sheng Zhou
发明人： Ping Chuang , Yu-Liang Lin , Mei-Sheng Zhou
IPC分类号： B01J3/00 , H01L21/02 , H01L21/28 , H01L21/314 , H01L21/316 , H01L29/51 , H01L21/31 , H01L21/469
CPC分类号： H01L21/28202 , B01J3/008 , H01L21/02238 , H01L21/02255 , H01L21/3144 , H01L21/31675 , H01L21/31679 , H01L28/40 , H01L29/513 , H01L29/518 , Y02P20/544
摘要： A method of forming an oxide layer. A fluid, such as water, is heated and pressurized to supercritical or near-supercritical conditions and mixed with at least one oxidizing agent. The supercritical state mixture of the fluid and at least one oxidizing agent is then applied on the workpiece, forming an oxide layer on the workpiece. The at least one oxidizing agent may comprise nitrogen, and the oxide layer formed on the workpiece may comprise a nitrogen doped oxide.
摘要翻译：一种形成氧化物层的方法。将诸如水的流体加热并加压至超临界或近临界条件并与至少一种氧化剂混合。然后将流体和至少一种氧化剂的超临界状态混合物施加到工件上，在工件上形成氧化物层。至少一种氧化剂可以包含氮，并且在工件上形成的氧化物层可以包括氮掺杂的氧化物。

8. 发明授权

US06875285B2 System and method for dampening high pressure impact on porous materials 失效
标题翻译：用于抑制高压冲击多孔材料的系统和方法
公开(公告)号：US06875285B2
公开(公告)日：2005-04-05
申请号：US10422339
申请日：2003-04-24
申请人： Ching-Ya Wang , Ping Chuang , Yu-Liang Lin , Mei-Sheng Zhou , Henry Lo
发明人： Ching-Ya Wang , Ping Chuang , Yu-Liang Lin , Mei-Sheng Zhou , Henry Lo
IPC分类号： B08B7/00 , H01L21/306 , H01L21/311 , C23G1/00
CPC分类号： H01L21/31116 , B08B7/0021 , H01L21/02052
摘要： System and method for reducing damage to a semiconductor substrate when using cleaning fluids at elevated pressures to clean the semiconductor substrates. A preferred embodiment comprises applying the cleaning fluid at a first pressure for a first time period, wherein the first pressure is relatively low, and then increasing the pressure of the cleaning fluid to a pressure level that can effectively clean the semiconductor substrate and maintaining the pressure level for a second time period. The application of the cleaning fluid at the relatively low initial pressure acts as a temporary filler and creates a buffer of the cleaning fluid on the semiconductor substrate and helps to dampen the impact of the subsequent high pressure application of the cleaning fluid on the semiconductor substrate.
摘要翻译：当在高压下使用清洁流体以清洁半导体衬底时，减少对半导体衬底的损伤的系统和方法。优选实施例包括在第一时间段内施加第一压力的清洁流体，其中第一压力相对较低，然后将清洁流体的压力提高到可以有效地清洁半导体衬底并保持压力的压力水平水平第二次。以相对较低的初始压力施加清洁流体作为临时填料并在半导体衬底上产生清洗液的缓冲液，并且有助于抑制随后的高压施加清洁流体对半导体衬底的冲击。

9. 发明授权

US06872127B2 Polishing pad conditioning disks for chemical mechanical polisher 有权
标题翻译：用于化学机械抛光机的抛光垫调节盘
公开(公告)号：US06872127B2
公开(公告)日：2005-03-29
申请号：US10194894
申请日：2002-07-11
申请人： Yu-Liang Lin , Henry Lo , Ping Chuang
发明人： Yu-Liang Lin , Henry Lo , Ping Chuang
IPC分类号： B24B53/017 , B24B53/12 , B24B1/00
CPC分类号： B24B53/017 , B24B53/12
摘要： The invention relates to disks for conditioning pads used in the chemical mechanical polishing of semiconductor wafers, and a method of fabricating the pads. In one embodiment, the conditioning pad includes multiple, pyramid-shaped, truncated protrusions which are cut or shaped in the surface of a typically stainless steel substrate. Each of the truncated protrusions includes a plateau in the top thereof. A seed layer, typically titanium nitride (TiN), is provided on the surface of the protrusions, and a contact layer such as diamond-like carbon (DLC) or other suitable film is provided over the seed layer. In another embodiment, each of the protrusions is pyramid-shaped and includes a pointed apex at the top thereof.
摘要翻译：本发明涉及用于半导体晶片的化学机械抛光中的调节垫的盘及其制造方法。在一个实施例中，调节垫包括在典型的不锈钢衬底的表面中切割或成形的多个金字塔形的截头突起。每个截头突起在其顶部包括平台。在突起的表面上提供种子层，通常为氮化钛（TiN），并且在种子层上提供诸如类金刚石碳（DLC）等接触层或其它合适的膜。在另一个实施例中，每个突起是金字塔形的，并且在其顶部包括尖顶。

10. 发明授权

US07354623B2 Surface modification of a porous organic material through the use of a supercritical fluid 有权
标题翻译：通过使用超临界流体对多孔有机材料进行表面改性
公开(公告)号：US07354623B2
公开(公告)日：2008-04-08
申请号：US10852381
申请日：2004-05-24
申请人： Ching-Ya Wang , Ping Chuang , Sunny Wu , Yu-Liang Lin , Hung-Jung Tu , Mei-Sheng Zhou , Henry Lo
发明人： Ching-Ya Wang , Ping Chuang , Sunny Wu , Yu-Liang Lin , Hung-Jung Tu , Mei-Sheng Zhou , Henry Lo
IPC分类号： B05D3/00 , B05D5/00
CPC分类号： H01L21/02203 , H01L21/02118 , H01L21/31058 , H01L21/312 , H01L21/31695 , Y10T428/249953 , Y10T428/249987
摘要： An organic layer, such as a porous low-K dielectric in an IC, contains pores open at its surface. To close the pores, the organic layer is contacted by a supercritical fluid that is a solvent for the layer. After a small amount of the surface and the wall of the open pores is solvated, a phase transition of the solvated organic material is effected at the surface to cover it with a dense, smooth, non-porous film that seals the open pores.
摘要翻译：有机层，例如IC中的多孔低K电介质，其表面含有孔。为了封闭孔，有机层与作为该层的溶剂的超临界流体接触。在少量表面和开放孔的壁被溶剂化后，在表面进行溶剂化有机材料的相变以用密封，开孔的密实，光滑，无孔的膜覆盖。

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