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    • 3. 发明申请
    • TUNNEL FIELD-EFFECT TRANSISTOR
    • 隧道场效应晶体管
    • US20130021061A1
    • 2013-01-24
    • US13551785
    • 2012-07-18
    • Mikael T. BjoerkAndreas Christian DoeringPhillip Stanley-MarbellKirsten Emilie Moselund
    • Mikael T. BjoerkAndreas Christian DoeringPhillip Stanley-MarbellKirsten Emilie Moselund
    • H01L29/78H03K19/21H01L21/336
    • H01L29/7391H01L29/42312
    • A tunnel field-effect transistor including at least: a source region including a corresponding source semiconductor material; a drain region including a corresponding drain semiconductor material, and a channel region including a corresponding channel semiconductor material, which is arranged between the source region and the drain region. The tunnel field-effect transistor further includes at least: a source-channel gate electrode provided on an interface between the source region and the channel region; an insulator corresponding to the source-channel gate electrode that is provided between the source-channel gate electrode and the interface between the source region and the channel region; a drain-channel gate electrode provided on an interface between the drain region and the channel region; and an insulator corresponding to the drain-channel gate electrode that is provided between the drain-channel gate electrode and the interface between the drain region and the channel region.
    • 一种隧道场效应晶体管,至少包括:包括相应源极半导体材料的源区; 包括相应的漏极半导体材料的漏极区域和布置在源极区域和漏极区域之间的包括相应的沟道半导体材料的沟道区域。 隧道场效应晶体管至少还包括:设置在源极区域和沟道区域之间的界面上的源极沟道栅电极; 与源极栅极电极和源极区域与沟道区域之间的界面之间设置的与源极栅极电极对应的绝缘体; 漏极沟道栅电极,设置在漏区和沟道区之间的界面上; 以及设置在漏极沟道栅电极和漏极区域与沟道区域之间的界面之间的与漏极沟道栅电极相对应的绝缘体。
    • 7. 发明授权
    • Tunnel field-effect transistor
    • 隧道场效应晶体管
    • US08772877B2
    • 2014-07-08
    • US13551785
    • 2012-07-18
    • Mikael T BjoerkAndreas Christian DoeringPhillip Stanley-MarbellKirsten Emilie Moselund
    • Mikael T BjoerkAndreas Christian DoeringPhillip Stanley-MarbellKirsten Emilie Moselund
    • H01L29/78
    • H01L29/7391H01L29/42312
    • A tunnel field-effect transistor including at least: a source region including a corresponding source semiconductor material; a drain region including a corresponding drain semiconductor material, and a channel region including a corresponding channel semiconductor material, which is arranged between the source region and the drain region. The tunnel field-effect transistor further includes at least: a source-channel gate electrode provided on an interface between the source region and the channel region; an insulator corresponding to the source-channel gate electrode that is provided between the source-channel gate electrode and the interface between the source region and the channel region; a drain-channel gate electrode provided on an interface between the drain region and the channel region; and an insulator corresponding to the drain-channel gate electrode that is provided between the drain-channel gate electrode and the interface between the drain region and the channel region.
    • 一种隧道场效应晶体管,至少包括:包括相应源极半导体材料的源区; 包括相应的漏极半导体材料的漏极区域和布置在源极区域和漏极区域之间的包括相应的沟道半导体材料的沟道区域。 隧道场效应晶体管至少还包括:设置在源极区域和沟道区域之间的界面上的源极沟道栅电极; 与源极栅极电极和源极区域与沟道区域之间的界面之间设置的与源极栅极电极对应的绝缘体; 漏极沟道栅电极,设置在漏区和沟道区之间的界面上; 以及设置在漏极沟道栅电极和漏极区域与沟道区域之间的界面之间的与漏极沟道栅电极相对应的绝缘体。