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1. 发明申请

US20130021061A1 TUNNEL FIELD-EFFECT TRANSISTOR 有权
标题翻译：隧道场效应晶体管
公开(公告)号：US20130021061A1
公开(公告)日：2013-01-24
申请号：US13551785
申请日：2012-07-18
申请人： Mikael T. Bjoerk , Andreas Christian Doering , Phillip Stanley-Marbell , Kirsten Emilie Moselund
发明人： Mikael T. Bjoerk , Andreas Christian Doering , Phillip Stanley-Marbell , Kirsten Emilie Moselund
IPC分类号： H01L29/78 , H03K19/21 , H01L21/336
CPC分类号： H01L29/7391 , H01L29/42312
摘要： A tunnel field-effect transistor including at least: a source region including a corresponding source semiconductor material; a drain region including a corresponding drain semiconductor material, and a channel region including a corresponding channel semiconductor material, which is arranged between the source region and the drain region. The tunnel field-effect transistor further includes at least: a source-channel gate electrode provided on an interface between the source region and the channel region; an insulator corresponding to the source-channel gate electrode that is provided between the source-channel gate electrode and the interface between the source region and the channel region; a drain-channel gate electrode provided on an interface between the drain region and the channel region; and an insulator corresponding to the drain-channel gate electrode that is provided between the drain-channel gate electrode and the interface between the drain region and the channel region.
摘要翻译：一种隧道场效应晶体管，至少包括：包括相应源极半导体材料的源区; 包括相应的漏极半导体材料的漏极区域和布置在源极区域和漏极区域之间的包括相应的沟道半导体材料的沟道区域。隧道场效应晶体管至少还包括：设置在源极区域和沟道区域之间的界面上的源极沟道栅电极; 与源极栅极电极和源极区域与沟道区域之间的界面之间设置的与源极栅极电极对应的绝缘体; 漏极沟道栅电极，设置在漏区和沟道区之间的界面上; 以及设置在漏极沟道栅电极和漏极区域与沟道区域之间的界面之间的与漏极沟道栅电极相对应的绝缘体。

2. 发明申请

US20130264544A1 NANOWIRE FIELD-EFFECT DEVICE WITH MULTIPLE GATES 审中-公开
标题翻译：具有多个门的NANOWIRE场效应器件
公开(公告)号：US20130264544A1
公开(公告)日：2013-10-10
申请号：US13995228
申请日：2011-11-30
申请人： Siegfried F. Karg , Kirsten Emilie Moselund
发明人： Siegfried F. Karg , Kirsten Emilie Moselund
IPC分类号： H01L29/775 , H01L29/66
CPC分类号： H01L29/66439 , B82Y10/00 , B82Y40/00 , H01L29/0676 , H01L29/068 , H01L29/1054 , H01L29/4232 , H01L29/7391 , H01L29/775
摘要： The present invention relates to a semiconductor device (1) comprising: at least a nanowire (2) configured to comprise: at least a source region (3) comprising a corresponding source semiconductor material, at least a drain region (4) comprising a corresponding drain semiconductor material and at least a channel region (5) comprising a corresponding channel semiconductor material, the channel region (5) being arranged between the source region (3) and the drain region (4), at least a gate electrode (6) that is arranged relative to the nanowire (2) to circumferentially surround at least a part of the channel region (5), and at least a strain gate (7) that is arranged relative to the nanowire (2) to circumferentially surround at least a part of a segment of the nanowire (2), the strain gate (7) being configured to apply a strain to the nanowire segment (8), thereby to facilitate at least an alteration of the energy bands corresponding to the source region (3) relative to the energy bands corresponding to the channel region (5).
摘要翻译：半导体器件（1）技术领域本发明涉及一种半导体器件（1），包括：至少纳米线（2），其被配置为包括：至少一个源极区域（3），其包括相应的源极半导体材料，至少一个漏极区域（4）漏极半导体材料和至少包括相应沟道半导体材料的沟道区域（5），所述沟道区域（5）布置在所述源极区域（3）和所述漏极区域（4）之间，至少栅极电极（6）相对于纳米线（2）布置以周向地包围沟道区域（5）的至少一部分，以及至少一个相对于纳米线（2）布置的应变门（7），以周向地包围至少一个纳米线段（2）的一部分，应变门（7）被配置为向纳米线段（8）施加应变，从而促进对应于源区（3）的能带的至少改变，相对于能带对应于通道区域（5）。

3. 发明授权

US08772877B2 Tunnel field-effect transistor 有权
标题翻译：隧道场效应晶体管
公开(公告)号：US08772877B2
公开(公告)日：2014-07-08
申请号：US13551785
申请日：2012-07-18
申请人： Mikael T Bjoerk , Andreas Christian Doering , Phillip Stanley-Marbell , Kirsten Emilie Moselund
发明人： Mikael T Bjoerk , Andreas Christian Doering , Phillip Stanley-Marbell , Kirsten Emilie Moselund
IPC分类号： H01L29/78
CPC分类号： H01L29/7391 , H01L29/42312
摘要： A tunnel field-effect transistor including at least: a source region including a corresponding source semiconductor material; a drain region including a corresponding drain semiconductor material, and a channel region including a corresponding channel semiconductor material, which is arranged between the source region and the drain region. The tunnel field-effect transistor further includes at least: a source-channel gate electrode provided on an interface between the source region and the channel region; an insulator corresponding to the source-channel gate electrode that is provided between the source-channel gate electrode and the interface between the source region and the channel region; a drain-channel gate electrode provided on an interface between the drain region and the channel region; and an insulator corresponding to the drain-channel gate electrode that is provided between the drain-channel gate electrode and the interface between the drain region and the channel region.
摘要翻译：一种隧道场效应晶体管，至少包括：包括相应源极半导体材料的源区; 包括相应的漏极半导体材料的漏极区域和布置在源极区域和漏极区域之间的包括相应的沟道半导体材料的沟道区域。隧道场效应晶体管至少还包括：设置在源极区域和沟道区域之间的界面上的源极沟道栅电极; 与源极栅极电极和源极区域与沟道区域之间的界面之间设置的与源极栅极电极对应的绝缘体; 漏极沟道栅电极，设置在漏区和沟道区之间的界面上; 以及设置在漏极沟道栅电极和漏极区域与沟道区域之间的界面之间的与漏极沟道栅电极相对应的绝缘体。

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