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    • 1. 发明授权
    • Memory controller and method for optimized read/modify/write performance
    • 用于优化读/写/写性能的内存控制器和方法
    • US07328317B2
    • 2008-02-05
    • US10970400
    • 2004-10-21
    • Philip Rogers Hillier, IIIWilliam Paul HovisJoseph Allen Kirscht
    • Philip Rogers Hillier, IIIWilliam Paul HovisJoseph Allen Kirscht
    • G06F12/00
    • G06F13/1642
    • A memory controller optimizes execution of a read/modify/write command by breaking the RMW command into separate and unique read and write commands that do not need to be executed together, but just need to be executed in the proper sequence. The most preferred embodiments use a separate RMW queue in the controller in conjunction with the read queue and write queue. In other embodiments, the controller places the read and write portions of the RMW into the read and write queue, but where the write queue has a dependency indicator associated with the RMW write command in the write queue to insure the controller maintains the proper execution sequence. The embodiments allow the memory controller to translate RMW commands into read and write commands with the proper sequence of execution to preserve data coherency.
    • 存储器控制器通过将RMW命令分解成不需要一起执行的单独且唯一的读取和写入命令来优化执行读/修改/写入命令,但只需要以正确的顺序执行。 最优选的实施例结合读队列和写队列使用控制器中的单独的RMW队列。 在其他实施例中,控制器将RMW的读取和写入部分放置在读取和写入队列中,但是写入队列具有与写入队列中的RMW写入命令相关联的依赖指示,以确保控制器维持正确的执行顺序 。 实施例允许存储器控制器以正确的执行顺序将RMW命令转换为读写命令以保持数据一致性。
    • 2. 发明授权
    • Memory controller and method for optimized read/modify/write performance
    • 用于优化读/写/写性能的内存控制器和方法
    • US07908443B2
    • 2011-03-15
    • US12136750
    • 2008-06-10
    • Philip Rogers Hillier, IIIWilliam Paul HovisJoseph Allen Kirscht
    • Philip Rogers Hillier, IIIWilliam Paul HovisJoseph Allen Kirscht
    • G06F12/00
    • G06F13/1642
    • A memory controller optimizes execution of a read/modify/write command by breaking the RMW command into separate and unique read and write commands that do not need to be executed together, but just need to be executed in the proper sequence. The most preferred embodiments use a separate RMW queue in the controller in conjunction with the read queue and write queue. In other embodiments, the controller places the read and write portions of the RMW into the read and write queue, but where the write queue has a dependency indicator associated with the RMW write command in the write queue to insure the controller maintains the proper execution sequence. The embodiments allow the memory controller to translate RMW commands into read and write commands with the proper sequence of execution to preserve data coherency.
    • 存储器控制器通过将RMW命令分解成不需要一起执行的单独且唯一的读取和写入命令来优化执行读/修改/写入命令,但只需要以正确的顺序执行。 最优选的实施例结合读队列和写队列使用控制器中的单独的RMW队列。 在其他实施例中,控制器将RMW的读取和写入部分放置在读取和写入队列中,但是写入队列具有与写入队列中的RMW写入命令相关联的依赖指示,以确保控制器维持正确的执行顺序 。 实施例允许存储器控制器以正确的执行顺序将RMW命令转换为读写命令以保持数据一致性。
    • 3. 发明授权
    • Memory controller and method for optimized read/modify/write performance
    • 用于优化读/写/写性能的内存控制器和方法
    • US07475202B2
    • 2009-01-06
    • US11779277
    • 2007-07-18
    • Philip Rogers Hillier, IIIWilliam Paul HovisJoseph Allen Kirscht
    • Philip Rogers Hillier, IIIWilliam Paul HovisJoseph Allen Kirscht
    • G06F12/00
    • G06F13/1642
    • A memory controller optimizes execution of a read/modify/write command by breaking the RMW command into separate and unique read and write commands that do not need to be executed together, but just need to be executed in the proper sequence. The most preferred embodiments use a separate RMW queue in the controller in conjunction with the read queue and write queue. In other embodiments, the controller places the read and write portions of the RMW into the read and write queue, but where the write queue has a dependency indicator associated with the RMW write command in the write queue to insure the controller maintains the proper execution sequence. The embodiments allow the memory controller to translate RMW commands into read and write commands with the proper sequence of execution to preserve data coherency.
    • 存储器控制器通过将RMW命令分解成不需要一起执行的单独且唯一的读取和写入命令来优化执行读/修改/写入命令,但只需要以正确的顺序执行。 最优选的实施例结合读队列和写队列使用控制器中的单独的RMW队列。 在其他实施例中,控制器将RMW的读取和写入部分放置在读取和写入队列中,但是写入队列具有与写入队列中的RMW写入命令相关联的依赖指示,以确保控制器维持正确的执行顺序 。 实施例允许存储器控制器以正确的执行顺序将RMW命令转换为读写命令以保持数据一致性。
    • 10. 发明授权
    • Bulk FinFET device
    • 散装FinFET器件
    • US07517764B2
    • 2009-04-14
    • US11427486
    • 2006-06-29
    • Roger Allen Booth, Jr.William Paul HovisJack Allan Mandelman
    • Roger Allen Booth, Jr.William Paul HovisJack Allan Mandelman
    • H01L21/336
    • H01L29/7851H01L29/66795
    • A finFET structure and a method of fabricating the finFET structure. The method includes: forming a silicon fin on a top surface of a silicon substrate; forming a gate dielectric on opposite sidewalls of the fin; forming a gate electrode over a channel region of the fin, the gate electrode in direct physical contact with the gate dielectric layer on the opposite sidewalls of the fin; forming a first source/drain in the fin on a first side of the channel region and forming a second source/drain in the fin on a second side of the channel region; removing a portion of the substrate from under at least a portion of the first and second source/drains to create a void; and filling the void with a dielectric material. The structure includes a body contact between the silicon body of the finFET and the substrate.
    • finFET结构和finFET结构的制造方法。 该方法包括:在硅衬底的顶表面上形成硅翅片; 在翅片的相对侧壁上形成栅电介质; 在鳍片的沟道区域上形成栅电极,栅电极与翅片的相对侧壁上的栅介电层直接物理接触; 在所述通道区域的第一侧上在所述翅片中形成第一源极/漏极,并且在所述沟道区域的第二侧上在所述鳍片中形成第二源极/漏极; 从第一和第二源/排水沟的至少一部分下方去除衬底的一部分以产生空隙; 并用介电材料填充空隙。 该结构包括在finFET的硅体和衬底之间的体接触。