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1. 发明授权

US5375556A Hydrothermal process for growing large crystals or crystal layers 失效
标题翻译：生长大晶体或晶体层的水热法
公开(公告)号：US5375556A
公开(公告)日：1994-12-27
申请号：US110781
申请日：1993-08-23
申请人： Peter W. Krempl , Gabriele Voborsky , Uwe Posch , Wolfgang Wallnofer
发明人： Peter W. Krempl , Gabriele Voborsky , Uwe Posch , Wolfgang Wallnofer
IPC分类号： C30B7/10 , C30B7/00 , C30B29/14
CPC分类号： C30B7/00 , C30B29/14 , C30B7/005 , Y10T117/1096
摘要： In order to obtain large, high-quality crystals or crystal layers of a me orthophosphate, in particular, GaPO.sub.4 or AlPO.sub.4, from a nutrient solution with the use of a seed plate, the proposal is put forward that in the initial phase of the growth process a seed plate of alpha-quartz (.alpha.-SiO.sub.2) be introduced into the nutrient solution, and that fluoride ions (F.sup.-) be added to this solution, at least for formation of the primary crystal layer on the quartz seed plate.
摘要翻译：为了从使用种子板的营养液中获得金属正磷酸盐，特别是GaPO 4或AlPO 4的大的，优质的晶体或晶体层，提出在生长的初始阶段将α-石英（α-SiO 2）的种子板加工到营养溶液中，并且至少在石英种子板上形成初级晶体层，向该溶液中加入氟离子（F-）。

2. 发明授权

US5098673A Apparatus for growing homogeneous crystals 失效
标题翻译：用于生长均质晶体的装置
公开(公告)号：US5098673A
公开(公告)日：1992-03-24
申请号：US511701
申请日：1990-04-20
申请人： Gunter Engel , Alfred Enko , Peter W. Krempl , Uwe Posch
发明人： Gunter Engel , Alfred Enko , Peter W. Krempl , Uwe Posch
IPC分类号： C30B7/10 , C01B25/37 , C30B7/00
CPC分类号： C30B7/00 , C30B29/10 , C30B29/14 , Y10T117/1096
摘要： In order to prevent crystal seeds with retrograde solubility from dissolving in the hydrothermal growing solution at the beginning of the growing process, and to protect the finished crystal at the end of the growing process, and in order to reach the thermodynamic growth equilibrium as soon as possible, the proposal is put forward that the growing solution be prepared, pre-saturated and pre-heated to a temperature close to saturation temperature outside of the growing tank, and that, for the growing process proper, the hot growing solution be added to the pre-heated growing tank provided with crystal seeds, where it should be further heated to a temperature at which the crystals start growing, and, further, that the hot growing solution be quickly removed from the growing tank as soon as the growing process has been completed.

3. 发明授权

US4881003A Method and device for reducing the water content in piezoelectric GAPO.sub. 4 失效
标题翻译：用于降低压电GAPO4晶体元素和所产生的晶体元素的含水量的方法和装置
公开(公告)号：US4881003A
公开(公告)日：1989-11-14
申请号：US269794
申请日：1988-11-10
申请人： Gunter Engel , Peter W. Krempl , Helmut List , Uwe Posch , Alfred Nitsch
发明人： Gunter Engel , Peter W. Krempl , Helmut List , Uwe Posch , Alfred Nitsch
IPC分类号： C30B29/14 , B01D12/00 , C30B7/00 , C30B33/00 , H01L41/24
CPC分类号： C30B7/00 , C30B29/14 , C30B33/00
摘要： In order to reduce the water content in piezoelectric GaPO.sub.4 crystal elements the proposal is put forward that each GaPO.sub.4 crystal element should be cut in its entirety from one uniform growth zone of a GaPO.sub.4 raw crystal bar and should not contain any zone boundaries, and that the piezoelectric GaPO.sub.4 crystal elements should be treated with a dehydrating solution, until an infrared coefficient of .alpha.
摘要翻译：为了降低压电GaPO4晶体元素的含水量，提出了每个GaPO4晶体元素应该从GaPO4原始晶体棒的一个均匀生长区域全部切割，并且不应包含任何区域边界，并且应用脱水溶液处理压电GaPO4晶体元件，直到在2.0μm附近的波长处获得α<1.5cm -1的红外系数。

4. 发明授权

US4946545A Method of growing homogeneous crystals 失效
标题翻译：均匀晶体生长方法
公开(公告)号：US4946545A
公开(公告)日：1990-08-07
申请号：US238580
申请日：1988-08-31
申请人： Gunter Engel , Alfred Enko , Peter W. Krempl , Uwe Posch
发明人： Gunter Engel , Alfred Enko , Peter W. Krempl , Uwe Posch
IPC分类号： C30B7/10 , C01B25/37 , C30B7/00
CPC分类号： C30B7/00 , C30B29/10 , C30B29/14 , Y10T117/1096
摘要： In order to prevent crystal seeds with retrograde solubility from dissolving in the hydrothermal growing solution at the beginning of the growing process, and to protect the finished crystal at the end of the growing process, and in order to reach the thermodynamic growth equilibrium as soon as possible, the proposal is put forward that the growing solution be prepared, pre-saturated and pre-heated to a temperature close to saturation temperature outside of the growing tank, and that, for the growing process proper, the hot growing solution be added to the pre-heated growing tank provided with crystal seeds, where it should be further heated to a temperature at which the crystals start growing, and, further, that the hot growing solution be quickly removed from the growing tank as soon as the growing process has been completed.
摘要翻译：为了在生长过程开始时防止具有逆向溶解度的晶体种子溶解在水热生长溶液中，并且在生长过程结束时保护成品晶体，并且为了达到热力学生长平衡可能的是，提出了将生长的溶液制备，预饱和并预加热至生长罐外部接近饱和温度的温度，并且对于生长过程适当，将热生长溶液加入预加热的生长槽具有晶种，其中应进一步将其加热至晶体开始生长的温度，此外，一旦生长过程具有热生长溶液即可快速从生长槽中移出已经完成

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