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    • 6. 发明授权
    • MEMS tunable device
    • MEMS可调谐器件
    • US08027143B2
    • 2011-09-27
    • US12090004
    • 2006-10-10
    • Theodoor Gertrudis Silvester Maria RijksPeter Gerard Steeneken
    • Theodoor Gertrudis Silvester Maria RijksPeter Gerard Steeneken
    • H01G7/00H01G7/06H01G5/16H01G5/019
    • H01G5/16
    • A micro-electromechanical device has a substrate (60), a movable element (15), a pair of electrodes (40) arranged on the substrate and on the movable element to move the movable element, and a controller (50) to supply the electrodes. To move the movable element to an intermediate position one or more pulses are applied during the movement, timed to compensate for under or over damping of the movement. This can reduce a settling delay. It can be applied to tunable RF capacitors. To control a decrease in the gap, a single pulse of a maximum supply level compensates for the inherent slowness of the device and over damping. To compensate for under damping, the pulses have a period corresponding to a resonant frequency, and comprise peaks and troughs above and below the final supply level, such that successive ones of the peaks and troughs are closer to the given supply level.
    • 微机电装置具有基板(60),可移动元件(15),布置在基板上的一对电极(40)和用于移动可移动元件的可移动元件,以及控制器(50) 电极。 为了将可移动元件移动到中间位置,在运动期间施加一个或多个脉冲,定时以补偿运动的低于或超过阻尼。 这可以减少稳定延迟。 它可以应用于可调谐RF电容。 为了控制间隙的减小,最大电源电平的单个脉冲补偿器件的固有慢度和过阻尼。 为了补偿在阻尼下,脉冲具有对应于谐振频率的周期,并且包括高于和低于最终供应水平的峰谷,使得连续的峰和谷更靠近给定的供给水平。
    • 10. 发明授权
    • MEMS switch and fabrication method
    • MEMS开关和制造方法
    • US08513745B2
    • 2013-08-20
    • US12996505
    • 2009-05-29
    • Peter Gerard SteenekenHilco SuyMartijn GoossensOlaf Wunnicke
    • Peter Gerard SteenekenHilco SuyMartijn GoossensOlaf Wunnicke
    • H01L29/84
    • H01H59/0009
    • A MEMS switch (1, 81), and methods of fabricating thereof, the switch comprising: a sealed cavity (24); and a membrane (26); wherein the sealed cavity (24) is defined in part by the membrane (26); and the membrane is a 5 metallic membrane (26), for example consisting of a single type of metal or metal alloy. The MEMS switch (1, 81) may comprise a top electrode (30), for example extending into the cavity (24), located in a hole (32) in the metallic membrane (26). Fabrication may include providing a sacrificial layer (22) in a partly defined cavity (24). The bending stiffness of the membrane (26) may be 10 higher along an RF line (102) than along a line (104) perpendicular to the RF line (102), for example by virtue of the cavity (24) being elliptical.
    • 一种MEMS开关(1,81)及其制造方法,所述开关包括:密封空腔(24); 和膜(26); 其中所述密封空腔(24)部分地由所述膜(26)限定; 并且膜是例如由单一类型的金属或金属合金组成的5金属膜(26)。 MEMS开关(1,81)可以包括位于金属膜(26)中的孔(32)中的顶部电极(30),例如延伸到空腔(24)中。 制造可以包括在部分限定的空腔(24)中提供牺牲层(22)。 沿着RF线(102),例如通过空腔(24)是椭圆形的,膜(26)的弯曲刚度可以比垂直于RF线(102)的线(104)高10。