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1. 发明授权

US06168640A Chemical-mechanical polishing slurry that reduces wafer defects 有权
公开(公告)号：US06168640A
公开(公告)日：2001-01-02
申请号：US09280391
申请日：1999-03-29
申请人： Peter A. Burke , Peter J. Beckage
发明人： Peter A. Burke , Peter J. Beckage
IPC分类号： C09K314
CPC分类号： C09K3/1463 , C09G1/02
摘要： A method of making a chemical-mechanical polishing slurry includes mixing a ferric salt oxidizer with a solution to produce a mixture with a dissolved ferric salt oxidizer, filtering the mixture to remove most preexisting particles therein that exceed a selected particle size, adding a suspension agent to the mixture, and adding abrasive particles to the mixture after filtering the mixture. Advantageously, when polishing occurs, scratching by the preexisting particles is dramatically reduced.

2. 发明授权

US6051495A Seasoning of a semiconductor wafer polishing pad to polish tungsten 失效
标题翻译：调整半导体晶圆抛光垫以抛光钨
公开(公告)号：US6051495A
公开(公告)日：2000-04-18
申请号：US962431
申请日：1997-10-31
申请人： Peter A. Burke , Kevin D. Shipley , Peter J. Beckage
发明人： Peter A. Burke , Kevin D. Shipley , Peter J. Beckage
IPC分类号： B24B53/017 , B24B53/12 , B24D13/14 , H01L21/321 , H01L21/463
CPC分类号： B24B53/017 , B24B53/12 , B24D13/145 , H01L21/3212
摘要： A tungsten prepper for seasoning a semiconductor wafer polishing pad to polish tungsten on a semiconductor wafer. The prepper includes a support device having a first surface and a seasoning layer attached to the first surface of the support device. The seasoning layer is made of a seasoning material for seasoning a polishing pad to polish tungsten. In one embodiment, the seasoning layer is flame sprayed on the surface of the support device. In another embodiment, the tungsten is inserted into notches in the surface. The seasoning material includes tungsten, and in some embodiments, an adhesion promoter such as nickel. The prepper can be attached to a conditioning arm of a Chemical Mechanical Polisher. The prepper can be used to season a new polishing pad until the tungsten polishing rate of the pad is above 4000 angstroms per minute. The prepper can also include conditioners to condition a pad while seasoning the pad.
摘要翻译：一种用于调制半导体晶片抛光垫以在半导体晶片上抛光钨的钨预制片。预打包机包括具有附接到支撑装置的第一表面的第一表面和调味层的支撑装置。调味料层是用调味料调理抛光垫来抛光钨。在一个实施例中，调味层被火焰喷涂在支撑装置的表面上。在另一个实施例中，钨被插入到表面中的凹口中。调味材料包括钨，并且在一些实施方案中包括诸如镍的粘合促进剂。预浸料可以连接到化学机械抛光机的调理臂。预浸料可用于调整新的抛光垫，直到垫的钨抛光速率高于每分钟4000埃。预制片还可以包括调节垫以调节垫的调理剂。

3. 发明授权

US06325705B2 Chemical-mechanical polishing slurry that reduces wafer defects and polishing system 有权
标题翻译：减少晶圆缺陷和抛光系统的化学机械抛光浆料
公开(公告)号：US06325705B2
公开(公告)日：2001-12-04
申请号：US09750593
申请日：2000-12-28
申请人： Peter A. Burke , Peter J. Beckage
发明人： Peter A. Burke , Peter J. Beckage
IPC分类号： C09K314
CPC分类号： C09K3/1463 , C09G1/02
摘要： A chemical-mechanical polishing slurry made by mixing a ferric salt oxidizer with a solution to produce a mixture with a dissolved ferric salt oxidizer, filtering the mixture to remove most preexisting particles therein that exceed a selected particle size, adding a suspension agent to the mixture, and adding abrasive particles to the mixture after filtering the mixture. Advantageously, when polishing occurs, scratching by the preexisting particles is dramatically reduced.
摘要翻译：通过将铁盐氧化剂与溶液混合以产生与溶解的铁盐氧化剂的混合物制备的化学机械抛光浆料，过滤混合物以除去超过选定粒度的大部分预先存在的颗粒，向混合物中加入悬浮剂并且在过滤混合物之后向混合物中加入磨料颗粒。有利地，当发生抛光时，预先存在的颗粒的刮擦显着地减少。

4. 发明授权

US5934978A Methods of making and using a chemical-mechanical polishing slurry that reduces wafer defects 失效
标题翻译：制造和使用减少晶片缺陷的化学机械抛光浆料的方法
公开(公告)号：US5934978A
公开(公告)日：1999-08-10
申请号：US911744
申请日：1997-08-15
申请人： Peter A. Burke , Peter J. Beckage
发明人： Peter A. Burke , Peter J. Beckage
IPC分类号： C09G1/02 , C09K3/14 , B24B1/00
CPC分类号： C09K3/1463 , C09G1/02
摘要： A method of making a chemical-mechanical polishing slurry includes mixing a ferric salt oxidizer with a solution to produce a mixture with a dissolved ferric salt oxidizer, filtering the mixture to remove most preexisting particles therein that exceed a selected particle size, adding a suspension agent to the mixture, and adding abrasive particles to the mixture after filtering the mixture. Advantageously, when polishing occurs, scratching by the preexisting particles is dramatically reduced.
摘要翻译：制造化学机械抛光浆料的方法包括将铁盐氧化剂与溶液混合以产生与溶解的铁盐氧化剂的混合物，过滤混合物以除去超过所选粒度的大部分预先存在的颗粒，加入悬浮剂混合物，并在过滤混合物后向混合物中加入磨料颗粒。有利地，当发生抛光时，预先存在的颗粒的刮擦显着地减少。

5. 发明授权

US07378306B2 Selective silicon deposition for planarized dual surface orientation integration 有权
标题翻译：用于平面化双面取向积分的选择性硅沉积
公开(公告)号：US07378306B2
公开(公告)日：2008-05-27
申请号：US11375763
申请日：2006-03-14
申请人： Gregory S. Spencer , Peter J. Beckage , Mariam G. Sadaka , Veer Dhandapani
发明人： Gregory S. Spencer , Peter J. Beckage , Mariam G. Sadaka , Veer Dhandapani
IPC分类号： H01L21/8238
CPC分类号： H01L21/823807 , H01L21/823878 , H01L21/84 , H01L27/1203 , H01L27/1207
摘要： A semiconductor process and apparatus provide a planarized hybrid substrate (225) having a more uniform polish surface (300) by thickening an SOI semiconductor layer (210) in relation to a previously or subsequently formed epitaxial silicon layer (220) with a selective silicon deposition process that covers the SOI semiconductor layer (210) with a crystalline semiconductor layer (216). By forming first gate electrodes (151) over a first SOI substrate (90) using deposited (100) silicon and forming second gate electrodes (161) over an epitaxially grown (110) silicon substrate (70), a high performance CMOS device is obtained which includes high-k metal PMOS gate electrodes (161) having improved hole mobility.
摘要翻译：半导体工艺和设备通过使用选择性硅沉积物相对于先前或随后形成的外延硅层（220）增厚SOI半导体层（210）来提供具有更均匀的抛光表面（300）的平坦化的混合衬底（225）用SOI晶体半导体层（216）覆盖SOI半导体层（210）的工艺。通过使用沉积（100）硅并在外延生长（110）硅衬底（70）上形成第二栅电极（161）在第一SOI衬底（90）上形成第一栅电极（151），获得高性能CMOS器件其包括具有改善的空穴迁移率的高k金属PMOS栅电极（161）。

6. 发明授权

US06666754B1 Method and apparatus for determining CMP pad conditioner effectiveness 有权
标题翻译：确定CMP垫调节器有效性的方法和装置
公开(公告)号：US06666754B1
公开(公告)日：2003-12-23
申请号：US09484604
申请日：2000-01-18
申请人： Peter J. Beckage
发明人： Peter J. Beckage
IPC分类号： B24B100
CPC分类号： B24B37/013 , B24B49/02 , B24B53/017
摘要： A method includes supplying a signal to rotationally drive a conditioning wheel of a conditioning tool. A polishing pad of a polishing tool is conditioned using the rotationally driven conditioning wheel. Changes in the signal driving the conditioning wheel during the conditioning process are monitored. A conditioning effectiveness of the conditioning wheel is determined based on the changes observed in the monitored signal. A system includes a conditioning tool and a controller. The conditioning tool is adapted to condition a polishing pad of a polishing tool. The controller is coupled to at least one of the polishing tool or the conditioning tool. The controller is adapted to supply a signal to rotationally drive a conditioning wheel of the conditioning tool, monitor changes in the signal driving the conditioning wheel during a conditioning process, and determine a conditioning effectiveness of the conditioning wheel based on changes observed in the monitored signal.
摘要翻译：一种方法包括提供信号以旋转地驱动调节工具的调节轮。使用旋转驱动的调节轮调节抛光工具的抛光垫。监视在调节过程中驱动调节轮的信号的变化。调节轮的调理效果基于在监视信号中观察到的变化来确定。系统包括调节工具和控制器。调理工具适于调节抛光工具的抛光垫。控制器耦合到抛光工具或调节工具中的至少一个。控制器适于提供信号以旋转地驱动调节工具的调节轮，监视在调节过程中驱动调节轮的信号的变化，并且基于在监视信号中观察到的变化来确定调节轮的调节效果。

7. 发明授权

US06572443B1 Method and apparatus for detecting a process endpoint 有权
标题翻译：用于检测过程终点的方法和装置
公开(公告)号：US06572443B1
公开(公告)日：2003-06-03
申请号：US09633596
申请日：2000-08-07
申请人： Peter J. Beckage , Keith A. Edwards , Ralf B. Lukner , Wonhui Cho
发明人： Peter J. Beckage , Keith A. Edwards , Ralf B. Lukner , Wonhui Cho
IPC分类号： B24B4900
CPC分类号： B24B37/013
摘要： An apparatus and method for detecting a process endpoint. The method includes receiving a first data signal and a second data signal and combining the first data signal and the second data signal to generate a combined data signal. The method also includes detecting a peak in the combined data signal, wherein the peak indicates the process endpoint. The apparatus includes a data collection unit capable of receiving a plurality of data signals and a signal analysis unit. The signal analysis unit is capable of combining the plurality of data signals received through the data collection unit to generate a combined data signal and identifying a peak in the combined data signal indicative of the process endpoint.
摘要翻译：用于检测过程端点的装置和方法。该方法包括接收第一数据信号和第二数据信号，并组合第一数据信号和第二数据信号以产生组合的数据信号。该方法还包括检测组合数据信号中的峰值，其中峰值表示过程端点。该装置包括能够接收多个数据信号的数据收集单元和信号分析单元。信号分析单元能够组合通过数据收集单元接收的多个数据信号，以生成组合数据信号，并且识别指示处理端点的组合数据信号中的峰值。

8. 发明授权

US06514858B1 Test structure for providing depth of polish feedback 失效
标题翻译：提供抛光反馈深度的测试结构
公开(公告)号：US06514858B1
公开(公告)日：2003-02-04
申请号：US09829202
申请日：2001-04-09
申请人： Frederick N. Hause , Paul R. Besser , Frank Mauersberger , Errol Todd Ryan , William S. Brennan , John A. Iacoponi , Peter J. Beckage
发明人： Frederick N. Hause , Paul R. Besser , Frank Mauersberger , Errol Todd Ryan , William S. Brennan , John A. Iacoponi , Peter J. Beckage
IPC分类号： H01L214763
CPC分类号： H01L22/34 , B24B37/042 , B24B49/00 , H01L21/31053 , H01L21/7684 , H01L2924/0002 , H01L2924/00
摘要： A test structure useful in controlling a polishing process of a semiconductor device is provided. The test structure is comprised of a structure layer, a first process layer, and interconnects. The first process layer is positioned above the structure layer and has a plurality of openings formed therein and extending at least partially therethrough to a preselected depth. At least a portion of the plurality of openings have a tapered region progressively narrowing in a direction from the first process layer toward the structure layer. The openings are spaced a preselected distance X apart. The interconnects are formed in the plurality of openings including the tapered region. Thus, as the process layer and interconnects are removed by the polishing process, the distance X increases, indicating the depth of the polishing process.
摘要翻译：提供了一种用于控制半导体器件的抛光工艺的测试结构。测试结构由结构层，第一处理层和互连构成。第一处理层位于结构层上方，并且具有形成在其中并且至少部分地穿过其延伸到预选深度的多个开口。多个开口的至少一部分具有在从第一处理层朝向结构层的方向上逐渐变窄的锥形区域。开口间隔开预定距离X. 互连形成在包括锥形区域的多个开口中。因此，当通过抛光工艺去除工艺层和互连件时，距离X增加，表示抛光过程的深度。

9. 发明授权

US07754587B2 Silicon deposition over dual surface orientation substrates to promote uniform polishing 有权
标题翻译：硅沉积在双面取向基板上以促进均匀抛光
公开(公告)号：US07754587B2
公开(公告)日：2010-07-13
申请号：US11375796
申请日：2006-03-14
申请人： Gregory S. Spencer , Peter J. Beckage , Mariam G. Sadaka
发明人： Gregory S. Spencer , Peter J. Beckage , Mariam G. Sadaka
IPC分类号： H01L21/20 , H01L21/36
CPC分类号： H01L29/7842 , H01L21/0237 , H01L21/02381 , H01L21/02433 , H01L21/02439 , H01L21/0245 , H01L21/02488 , H01L21/02502 , H01L21/02516 , H01L21/02532 , H01L21/02609 , H01L21/02639 , H01L21/823807 , H01L21/823842 , H01L21/823857 , H01L21/823878 , H01L21/84 , H01L27/1203 , H01L27/1207 , H01L29/66651 , H01L29/7848
摘要： A semiconductor process and apparatus provide a planarized hybrid substrate (16) by selectively depositing an epitaxial silicon layer (70) to fill a trench (96), and then blanket depositing silicon to cover the entire wafer with near uniform thickness of crystalline silicon (102) over the epi silicon layer (70) and polycrystalline silicon (101, 103) over the nitride mask layer (95). The polysilicon material (101, 103) added by the two-step process increases the polish rate of subsequent CMP polishing to provide a more uniform polish surface (100) over the entire wafer surface, regardless of variations in structure widths and device densities. By forming first gate electrodes (151) over a first SOI layer (90) using deposited (100) silicon and forming second gate electrodes (161) over an epitaxially grown (110) silicon layer (70), a high performance CMOS device is obtained which includes high-k metal PMOS gate electrodes (161) having improved hole mobility.
摘要翻译：半导体工艺和装置通过选择性地沉积外延硅层（70）以填充沟槽（96）并且然后将硅覆盖整个晶片以覆盖晶体硅的近均匀厚度（102）而提供平面化的混合衬底（16））超过氮化物掩模层（95）上的外延硅层（70）和多晶硅（101,103）。通过两步法加入的多晶硅材料（101,103）增加后续CMP抛光的抛光速率，从而在整个晶片表面上提供更均匀的抛光表面（100），而不管结构宽度和器件密度的变化。通过使用沉积（100）硅并在外延生长（110）硅层（70）上形成第二栅电极（161）在第一SOI层（90）上形成第一栅电极（151），获得高性能CMOS器件其包括具有改善的空穴迁移率的高k金属PMOS栅电极（161）。

10. 发明授权

US06809032B1 Method and apparatus for detecting the endpoint of a chemical-mechanical polishing operation using optical techniques 有权
标题翻译：使用光学技术检测化学机械抛光操作的终点的方法和装置
公开(公告)号：US06809032B1
公开(公告)日：2004-10-26
申请号：US10136513
申请日：2002-05-01
申请人： Frank Mauersberger , Peter J. Beckage , Paul R. Besser , Frederick N. Hause , Errol Todd Ryan , William S. Brennan , John A. Iacoponi
发明人： Frank Mauersberger , Peter J. Beckage , Paul R. Besser , Frederick N. Hause , Errol Todd Ryan , William S. Brennan , John A. Iacoponi
IPC分类号： H01L21302
CPC分类号： B24B37/013 , B24B49/12 , H01L21/3212 , H01L21/76801 , H01L21/7684 , H01L21/76877
摘要： In another aspect of the present invention, a system for detecting an endpoint in a polishing process is provided. The system comprises a polishing tool, a controllable light source, a sensor, and a controller. The polishing tool is capable of polishing a surface of a semiconductor device, wherein the semiconductor device includes a first layer comprised of a first material and a second layer comprised of a second material. The first layer is positioned above the second layer. The controllable light source is capable of delivering light having one of a plurality of a preselected frequencies to the surface of the semiconductor device. The sensor is capable of detecting the light reflected from the surface of the semiconductor device. The controller is capable of determining the second material, instructing the controllable light source to deliver light of one of the frequencies in response to the second material, comparing the reflected light to a preselected setpoint, and modifying the polishing process in response to the reflected light exceeding the preselected setpoint.
摘要翻译：在本发明的另一方面，提供了一种用于在抛光过程中检测端点的系统。该系统包括抛光工具，可控光源，传感器和控制器。抛光工具能够抛光半导体器件的表面，其中半导体器件包括由第一材料构成的第一层和由第二材料构成的第二层。第一层位于第二层之上。可控光源能够将具有多个预选频率中的一个的光传送到半导体器件的表面。传感器能够检测从半导体器件的表面反射的光。所述控制器能够确定所述第二材料，指示所述可控光源响应于所述第二材料传送所述频率之一的光，将所述反射光与预选设定值进行比较，以及响应于所述反射光修改所述抛光过程超过预选设定值。

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