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1. 发明申请

US20100018764A1 SUBSTRATE-PENETRATING ELECTRICAL CONNECTIONS 有权
标题翻译：基板电气连接
公开(公告)号：US20100018764A1
公开(公告)日：2010-01-28
申请号：US12439568
申请日：2007-09-04
申请人： Pelle Rangsten , Hakan Johansson , Johan Bejhed
发明人： Pelle Rangsten , Hakan Johansson , Johan Bejhed
IPC分类号： H05K1/11 , H05K3/10
CPC分类号： B82Y15/00 , B64G1/1078 , B64G1/26 , B64G1/401 , B81B7/0006 , B81B2207/092 , B81B2207/096 , F02K9/62 , F02K9/80 , F05D2250/82 , F05D2250/84 , Y10T29/49083 , Y10T29/49099 , Y10T29/49155 , Y10T29/49346 , Y10T29/49718 , Y10T29/49746
摘要： A wafer assembly (30) includes a substrate (71), in turn including a wafer (70) or a stack of wafers. The wafer assembly (30) further includes an electrical connection (32) arranged through at least a part of the substrate (71). The electrical connection (32) is made by low-resistance silicon. The electrical connection (32) is positioned in a hole (84) penetrating at least a part of the substrate (71). A surface (78) of the substrate (71) confining the hole (84) is electrically insulating. The electrical connection (32) has at least one protrusion (75), which protrudes transversally to a main extension (83) of the hole (84) and the protrusion (75) protrudes outside a minimum hole diameter (85), as projected in the main extension (83) of the hole (84). Preferably, the protrusion (75) is supported by a support surface (81) of the substrate (71). A manufacturing method is also disclosed.
摘要翻译：晶片组件（30）包括基板（71），其又包括晶片（70）或晶片堆叠。晶片组件（30）还包括布置成穿过基底（71）的至少一部分的电连接（32）。电连接（32）由低电阻硅制成。电连接（32）位于贯穿基板（71）的至少一部分的孔（84）中。限制孔（84）的基板（71）的表面（78）是电绝缘的。电连接（32）具有至少一个突出部（75），该突起横向突出到孔（84）的主延伸部（83），并且突起（75）突出到最小孔直径（85）的外侧，如投影在孔（84）的主延伸部（83）。优选地，突起（75）由衬底（71）的支撑表面（81）支撑。还公开了一种制造方法。

2. 发明授权

US08395057B2 Substrate-penetrating electrical connections 有权
标题翻译：基板穿透电气连接
公开(公告)号：US08395057B2
公开(公告)日：2013-03-12
申请号：US12439568
申请日：2007-09-04
申请人： Pelle Rangsten , Hakan Johansson , Johan Bejhed
发明人： Pelle Rangsten , Hakan Johansson , Johan Bejhed
IPC分类号： H05K1/11 , H05K1/09 , H01L23/48 , H01L21/44
CPC分类号： B82Y15/00 , B64G1/1078 , B64G1/26 , B64G1/401 , B81B7/0006 , B81B2207/092 , B81B2207/096 , F02K9/62 , F02K9/80 , F05D2250/82 , F05D2250/84 , Y10T29/49083 , Y10T29/49099 , Y10T29/49155 , Y10T29/49346 , Y10T29/49718 , Y10T29/49746
摘要： A wafer assembly (30) includes a substrate (71), in turn including a wafer (70) or a stack of wafers. The wafer assembly (30) further includes an electrical connection (32) arranged through at least a part of the substrate (71). The electrical connection (32) is made by low-resistance silicon. The electrical connection (32) is positioned in a hole (84) penetrating at least a part of the substrate (71). A surface (78) of the substrate (71) confining the hole (84) is electrically insulating. The electrical connection (32) has at least one protrusion (75), which protrudes transversally to a main extension (83) of the hole (84) and the protrusion (75) protrudes outside a minimum hole diameter (85), as projected in the main extension (83) of the hole (84). Preferably, the protrusion (75) is supported by a support surface (81) of the substrate (71). A manufacturing method is also disclosed.
摘要翻译：晶片组件（30）包括基板（71），其又包括晶片（70）或晶片堆叠。晶片组件（30）还包括布置成穿过基底（71）的至少一部分的电连接（32）。电连接（32）由低电阻硅制成。电连接（32）位于贯穿基板（71）的至少一部分的孔（84）中。限制孔（84）的基板（71）的表面（78）是电绝缘的。电连接（32）具有至少一个突出部（75），该突起横向突出到孔（84）的主延伸部（83），并且突起（75）突出到最小孔直径（85）的外侧，如投影在孔（84）的主延伸部（83）。优选地，突起（75）由衬底（71）的支撑表面（81）支撑。还公开了一种制造方法。

3. 发明授权

US08684034B2 Pressure relief valve 有权
标题翻译：减压阀
公开(公告)号：US08684034B2
公开(公告)日：2014-04-01
申请号：US13125453
申请日：2009-10-19
申请人： Tor-Arne Grönland , Pelle Rangsten , Kerstin Jonsson , Johan Bejhed
发明人： Tor-Arne Grönland , Pelle Rangsten , Kerstin Jonsson , Johan Bejhed
IPC分类号： F16K31/12
CPC分类号： F16K99/0001 , F16K99/0057 , F16K2099/008 , Y10T137/1812 , Y10T137/7842 , Y10T137/8122 , Y10T137/87507 , Y10T137/87555
摘要： A micromechanical pressure relief valve arrangement comprises a stack of wafers. An active pressure relief valve is realized within the stack of wafers. A passive pressure relief valve is also realized within the stack of wafers, arranged in parallel to the active pressure relief valve. A check valve, also realized within the stack of wafers, is arranged in series with both the active pressure relief valve and the passive pressure relief valve.
摘要翻译：微机械压力释放阀装置包括一叠晶片。在堆叠的晶片内实现主动减压阀。被动的压力释放阀也被实现在平行于主动减压阀的晶片堆内。还实现了在堆叠的晶片内的止回阀与主动减压阀和被动减压阀两者串联布置。

4. 发明申请

US20110204266A1 PRESSURE RELIEF VALVE 有权
标题翻译：压力减压阀
公开(公告)号：US20110204266A1
公开(公告)日：2011-08-25
申请号：US13125453
申请日：2009-10-19
申请人： Tor-Arne Gronland , Pelle Rangsten , Kerstin Jonsson , Johan Bejhed
发明人： Tor-Arne Gronland , Pelle Rangsten , Kerstin Jonsson , Johan Bejhed
IPC分类号： F16K31/12
CPC分类号： F16K99/0001 , F16K99/0057 , F16K2099/008 , Y10T137/1812 , Y10T137/7842 , Y10T137/8122 , Y10T137/87507 , Y10T137/87555
摘要： A micromechanical pressure relief valve arrangement (10) comprises a stack of wafers (13). An active pressure relief valve (20) is realized within the stack of wafers (13). A passive pressure relief valve (30) is also realized within said stack of wafers (13), arranged in parallel to the active pressure relief valve (20). A check valve (50), also realized within the stack of wafers (13), is arranged in series with both the active pressure relief valve (20) and the passive pressure relief valve (30).
摘要翻译：微机械压力释放阀装置（10）包括一叠晶片（13）。在晶片堆叠（13）内实现主动减压阀（20）。在所述堆叠的晶片（13）内还实现被动的压力释放阀（30），其平行于主动减压阀（20）布置。在晶片堆叠（13）内实现的止回阀（50）与主动减压阀（20）和被动式压力释放阀（30）同时布置。

5. 发明授权

US08336314B2 Method of manufacturing a nozzle arrangement and method for in-situ repairing a nozzle arrangement 有权
公开(公告)号：US08336314B2
公开(公告)日：2012-12-25
申请号：US12439749
申请日：2007-09-04
申请人： Tor-Arne Gronland , Pelle Ransten , Hakan Johansson , Johan Bejhed
发明人： Tor-Arne Gronland , Pelle Ransten , Hakan Johansson , Johan Bejhed
IPC分类号： B64G1/40 , F03H99/00
CPC分类号： B82Y15/00 , B64G1/1078 , B64G1/26 , B64G1/401 , B81B7/0006 , B81B2207/092 , B81B2207/096 , F02K9/62 , F02K9/80 , F05D2250/82 , F05D2250/84 , Y10T29/49083 , Y10T29/49099 , Y10T29/49155 , Y10T29/49346 , Y10T29/49718 , Y10T29/49746
摘要： A nozzle arrangement for use in a gas thruster is presented. At least one heater micro structure (20) is arranged in a stagnation chamber (12) of the gas thruster. The heater microstructure (20) comprises a core of silicon or a silicon compound coated by a surface metal or metal compound coating. The heater microstructure (20) is manufactured in silicon or a silicon compound and covered by a surface metal coating. The heater microstructure (20) is mounted in the stagnation chamber (12) before or after the coverage of the surface metal or metal compound coating. The coverage is performed by heating the heater microstructure and flowing a gas comprising low quantities of a metal compound. The compound decomposes at the heated heater microstructure (20), forming the surface metal or metal compound coating. The same principles of coating can be used for repairing the heater microstructure (20) in situ. The driving gas comprises preferably a compound exhibiting an exothermic reaction when coming into contact with a catalytically active material. If the gas is exposed to heater microstructures being covered with the catalytically active material, the gas is further heated by the catalytic reaction.

6. 发明申请

US20100139239A1 GAS THRUSTER 有权
标题翻译：燃气节流阀
公开(公告)号：US20100139239A1
公开(公告)日：2010-06-10
申请号：US12439749
申请日：2007-09-04
申请人： Tor-Arne Gronland , Pelle Ransten , Hakan Johansson , Johan Bejhed
发明人： Tor-Arne Gronland , Pelle Ransten , Hakan Johansson , Johan Bejhed
IPC分类号： B64G1/40
CPC分类号： B82Y15/00 , B64G1/1078 , B64G1/26 , B64G1/401 , B81B7/0006 , B81B2207/092 , B81B2207/096 , F02K9/62 , F02K9/80 , F05D2250/82 , F05D2250/84 , Y10T29/49083 , Y10T29/49099 , Y10T29/49155 , Y10T29/49346 , Y10T29/49718 , Y10T29/49746
摘要： A nozzle arrangement for use in a gas thruster is presented. At least one heater micro structure (20) is arranged in a stagnation chamber (12) of the gas thruster. The heater microstructure (20) comprises a core of silicon or a silicon compound coated by a surface metal or metal compound coating. The heater microstructure (20) is manufactured in silicon or a silicon compound and covered by a surface metal coating. The heater microstructure (20) is mounted in the stagnation chamber (12) before or after the coverage of the surface metal or metal compound coating. The coverage is performed by heating the heater microstructure and flowing a gas comprising low quantities of a metal compound. The compound decomposes at the heated heater microstructure (20), forming the surface metal or metal compound coating. The same principles of coating can be used for repairing the heater microstructure (20) in situ. The driving gas comprises preferably a compound exhibiting an exothermic reaction when coming into contact with a catalytically active material. If the gas is exposed to heater microstructures being covered with the catalytically active material, the gas is further heated by the catalytic reaction.
摘要翻译：提出了一种用于气体推进器的喷嘴装置。至少一个加热器微结构（20）布置在气体推进器的停滞室（12）中。加热器微结构（20）包括由核或硅化合物涂覆的表面金属或金属化合物涂层。加热器微结构（20）由硅或硅化合物制成并被表面金属涂层覆盖。加热器微结构（20）在表面金属或金属化合物涂层的覆盖之前或之后安装在停滞室（12）中。通过加热加热器微结构并流动包含少量金属化合物的气体来进行覆盖。该化合物在加热的加热器微结构（20）处分解，形成表面金属或金属化合物涂层。相同的涂层原理可用于原位修复加热器微结构（20）。当与催化活性材料接触时，驱动气体优选包含表现出放热反应的化合物。如果气体暴露于被催化活性材料覆盖的加热器微结构，则气体被催化反应进一步加热。

7. 发明申请

US20090001303A1 Single Use Valve 有权
标题翻译：单用阀
公开(公告)号：US20090001303A1
公开(公告)日：2009-01-01
申请号：US12159630
申请日：2006-12-28
申请人： Johan Bejhed , Mikael Karlsson
发明人： Johan Bejhed , Mikael Karlsson
IPC分类号： F16K49/00
CPC分类号： F16K13/04 , B01L3/502738 , F16K31/025 , F16K99/0001 , F16K99/003 , F16K99/0044 , Y10T137/1812 , Y10T137/2196
摘要： A single use valve (10) comprises a plate (12) having an internal filter structure (28). A sealing substance (20) covers an inlet (14) to the filter structure (28). A heater arrangement (16) is arranged at the plate (12) in the vicinity of the sealing substance (20) for converting electrical current into heat and thereby melting or evaporating the sealing substance (20). The heater arrangement (16) conducts at least a part of the current, and preferably the entire current, along a conduction path not including the sealing substance (20). The melting of the sealing substance (20) thereby becomes independent on the existence of a complete electrical connection through the sealing substance (20). The heater arrangement (16) has therefore preferably its main heat emission in an area surrounding the sealing substance (20). The sealing substance (20) can be of any non-porous material.
摘要翻译：单用阀（10）包括具有内部过滤器结构（28）的板（12）。密封物质（20）覆盖到过滤器结构（28）的入口（14）。在密封材料（20）附近的板（12）处布置有加热器装置（16），用于将电流转换成热量，从而熔化或蒸发密封物质（20）。加热器装置（16）沿着不包括密封物质（20）的传导路径传导电流的至少一部分，优选整个电流。因此，通过密封物质（20）的完全电连接的存在，密封物质（20）的熔化变得独立。因此，加热器装置（16）优选地在围绕密封物质（20）的区域中具有主要的热量。密封材料（20）可以是任何无孔材料。

8. 发明授权

US08316873B2 Single use valve 有权
标题翻译：单用阀
公开(公告)号：US08316873B2
公开(公告)日：2012-11-27
申请号：US12159630
申请日：2006-12-28
申请人： Johan Bejhed , Mikael Karlsson
发明人： Johan Bejhed , Mikael Karlsson
IPC分类号： F16K17/14 , F16K17/40
CPC分类号： F16K13/04 , B01L3/502738 , F16K31/025 , F16K99/0001 , F16K99/003 , F16K99/0044 , Y10T137/1812 , Y10T137/2196
摘要： A single use valve (10) comprises a plate (12) having an internal filter structure (28). A sealing substance (20) covers an inlet (14) to the filter structure (28). A heater arrangement (16) is arranged at the plate (12) in the vicinity of the sealing substance (20) for converting electrical current into heat and thereby melting or evaporating the sealing substance (20). The heater arrangement (16) conducts at least a part of the current, and preferably the entire current, along a conduction path not including the sealing substance (20). The melting of the sealing substance (20) thereby becomes independent on the existence of a complete electrical connection through the sealing substance (20). The heater arrangement (16) has therefore preferably its main heat emission in an area surrounding the sealing substance (20). The sealing substance (20) can be of any non-porous material.
摘要翻译：单用阀（10）包括具有内部过滤器结构（28）的板（12）。密封物质（20）覆盖到过滤器结构（28）的入口（14）。在密封材料（20）附近的板（12）处布置有加热器装置（16），用于将电流转换成热量，从而熔化或蒸发密封物质（20）。加热器装置（16）沿着不包括密封物质（20）的传导路径传导电流的至少一部分，优选整个电流。因此，通过密封物质（20）的完全电连接的存在，密封物质（20）的熔化变得独立。因此，加热器装置（16）优选地在围绕密封物质（20）的区域中具有主要的热量。密封材料（20）可以是任何无孔材料。

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