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1. 发明申请

US20060030151A1 Sputter deposition and etching of metallization seed layer for overhang and sidewall improvement 有权
标题翻译：金属化种子层的溅射沉积和蚀刻用于悬垂和侧壁改进
公开(公告)号：US20060030151A1
公开(公告)日：2006-02-09
申请号：US10915139
申请日：2004-08-09
申请人： Peijun Ding , Fuhong Zhang , Hsien-Lung Yang , Michael Miller , Jianming Fu , Jick Yu , Zheng Xu , Fusen Chen
发明人： Peijun Ding , Fuhong Zhang , Hsien-Lung Yang , Michael Miller , Jianming Fu , Jick Yu , Zheng Xu , Fusen Chen
IPC分类号： H01L21/4763
CPC分类号： H01L21/2855 , H01L21/76843 , H01L21/76865 , H01L21/76873 , H01L2221/1089
摘要： An integrated sputtering method and reactor for copper or aluminum seed layers in which a plasma sputter reactor initially deposits a thin conformal layer onto a substrate including a high-aspect ratio hole subject to the formation of overhangs. After the seed deposition, the same sputter reactor is used to sputter etch the substrate with energetic light ions, especially helium, having an energy sufficiently low that it selectively etches the metallization to the heavier underlying barrier layer, for example, copper over tantalum or aluminum over titanium. An RF inductive coil generates the plasma during the sputtering etching while the target power is turned off. A final copper flash step deposits copper over the bare barrier field region before copper is electrochemically plated to fill the hole. The invention also includes a simultaneous sputter deposition and sputter etch, and an energetic ion processing of the copper seed sidewall.
摘要翻译：一种用于铜或铝种子层的集成溅射方法和反应器，其中等离子体溅射反应器最初将薄的共形层沉积到包括形成突出端的高纵横比孔的基板上。在种子沉积之后，使用相同的溅射反应器以能量足够低的能量的能量轻离子（特别是氦）溅射蚀刻衬底，以使其能够将金属化选择性地蚀刻到较重的下层阻挡层，例如钽或铝上的铜超过钛。 RF感应线圈在溅射蚀刻期间产生等离子体，同时关闭目标电源。在铜电化学镀以填充孔之前，最终的铜闪光步骤将铜沉积在裸露的屏障场区域上。本发明还包括同时溅射沉积和溅射蚀刻以及铜种子侧壁的能量离子处理。

2. 发明申请

US20050006222A1 Self-ionized and inductively-coupled plasma for sputtering and resputtering 有权
标题翻译：用于溅射和再溅射的自电离和电感耦合等离子体
公开(公告)号：US20050006222A1
公开(公告)日：2005-01-13
申请号：US10495506
申请日：2002-11-14
申请人： Peijun Ding , Rong Tao , Zheng Xu , Daniel Lubben , Suraj Rengarajan , Michael Miller , Arvind Sundarrajan , Xianmin Tang , John Forster , Jianming Fu , Roderick Mosely , Fusen Chen , Praburam Gopalraja
发明人： Peijun Ding , Rong Tao , Zheng Xu , Daniel Lubben , Suraj Rengarajan , Michael Miller , Arvind Sundarrajan , Xianmin Tang , John Forster , Jianming Fu , Roderick Mosely , Fusen Chen , Praburam Gopalraja
IPC分类号： C23C14/04 , C23C14/34 , C23C14/35 , C23C14/56 , H01J37/32 , H01J37/34 , H01L21/285 , H01L21/4763 , H01L21/768 , C23C14/00 , C23C14/32 , C25B9/00
CPC分类号： C23C14/046 , C23C14/345 , C23C14/3457 , C23C14/35 , C23C14/358 , C23C14/564 , C23C14/568 , H01J37/321 , H01J37/3402 , H01J37/3408 , H01J37/3441 , H01J2237/3327 , H01L21/2855 , H01L21/76805 , H01L21/76814 , H01L21/76843 , H01L21/76844 , H01L21/76846 , H01L21/76862 , H01L21/76865 , H01L21/76868 , H01L21/76871 , H01L21/76873 , H01L21/76876 , H01L21/76877 , H01L2221/1089
摘要： A magnetron sputter reactor (410) and its method of use, in which SIP sputtering and ICP sputtering are promoted is disclosed. In another chamber (412) an array of auxiliary magnets positioned along sidewalls (414) of a magnetron sputter reactor on a side towards the wafer from the target is disclosed. The magnetron (436) preferably is a small one having a stronger outer pole (442) of a first polarity surrounding a weaker inner pole (440) of a second polarity all on a yoke (444) and rotates about the axis (438) of the chamber using rotation means (446, 448, 450). The auxiliary magnets (462) preferably have the first polarity to draw the unbalanced magnetic field (460) towards the wafer (424), which is on a pedestal (422) supplied with power (454). Argon (426) is supplied through a valve (428). The target (416) is supplied with power (434).
摘要翻译：公开了一种促进SIP溅射和ICP溅射的磁控溅射反应器（410）及其使用方法。在另一个室（412）中，公开了一种辅助磁体阵列，其沿着磁控溅射反应器的侧面（414）定位，所述磁控溅射反应器在朝向晶片的一侧朝向靶。优选地，磁控管（436）是小的，其具有第一极性的更强的外极（442），其具有围绕轭（444）的第二极性的较弱内极（440），并且围绕轴线（438）旋转所述室使用旋转装置（446,448,450）。辅助磁体（462）优选地具有第一极性，以将不平衡磁场（460）朝着被提供电力（454）的基座（422）上的晶片（424）拉出。氩（426）通过阀（428）供应。目标（416）被供电（434）。

3. 发明申请

US20050255691A1 Self-ionized and inductively-coupled plasma for sputtering and resputtering 审中-公开
标题翻译：用于溅射和再溅射的自电离和电感耦合等离子体
公开(公告)号：US20050255691A1
公开(公告)日：2005-11-17
申请号：US11184615
申请日：2005-07-19
申请人： Peijun Ding , Rong Tao , Zheng Xu , Daniel Lubben , Suraj Rengarajan , Michael Miller , Arvind Sundarrajan , Xianmin Tang , John Forster , Jianming Fu , Roderick Mosely , Fusen Chen , Praburam Gopalraja
发明人： Peijun Ding , Rong Tao , Zheng Xu , Daniel Lubben , Suraj Rengarajan , Michael Miller , Arvind Sundarrajan , Xianmin Tang , John Forster , Jianming Fu , Roderick Mosely , Fusen Chen , Praburam Gopalraja
IPC分类号： C23C14/04 , C23C14/34 , C23C14/35 , C23C14/56 , H01J37/32 , H01J37/34 , H01L21/285 , H01L21/4763 , H01L21/768
CPC分类号： C23C14/046 , C23C14/345 , C23C14/3457 , C23C14/35 , C23C14/358 , C23C14/564 , C23C14/568 , H01J37/321 , H01J37/3402 , H01J37/3408 , H01J37/3441 , H01J2237/3327 , H01L21/2855 , H01L21/76805 , H01L21/76814 , H01L21/76843 , H01L21/76844 , H01L21/76846 , H01L21/76862 , H01L21/76865 , H01L21/76868 , H01L21/76871 , H01L21/76873 , H01L21/76876 , H01L21/76877 , H01L2221/1089
摘要： A magnetron sputter reactor for sputtering deposition materials such as tantalum, tantalum nitride and copper, for example, and its method of use, in which self-ionized plasma (SIP) sputtering and inductively coupled plasma (ICP) sputtering are promoted, either together or alternately, in the same or different chambers. Also, bottom coverage may be thinned or eliminated by ICP resputtering in one chamber and SIP in another. SIP is promoted by a small magnetron having poles of unequal magnetic strength and a high power applied to the target during sputtering. ICP is provided by one or more RF coils which inductively couple RF energy into a plasma. The combined SIP-ICP layers can act as a liner or barrier or seed or nucleation layer for hole. In addition, an RF coil may be sputtered to provide protective material during ICP resputtering. In another chamber an array of auxiliary magnets positioned along sidewalls of a magnetron sputter reactor on a side towards the wafer from the target. The magnetron preferably is a small, strong one having a stronger outer pole of a first magnetic polarity surrounding a weaker outer pole of a second magnetic polarity and rotates about the central axis of the chamber. The auxiliary magnets preferably have the first magnetic polarity to draw the unbalanced magnetic field component toward the wafer. The auxiliary magnets may be either permanent magnets or electromagnets.
摘要翻译：用于溅射诸如钽，氮化钽和铜的沉积材料的磁控溅射反应器及其使用方法，其中促进了自离子等离子体（SIP）溅射和电感耦合等离子体（ICP）溅射，其一起或者交替地，在相同或不同的室中。此外，底部覆盖可以通过在一个室中的ICP再溅射和另一个室中的SIP来减薄或消除。 SIP由在溅射期间施加到靶的不均匀磁强度和高功率的磁极的小磁控管促进。 ICP由一个或多个将RF能量感应耦合到等离子体中的RF线圈提供。组合的SIP-ICP层可以作为孔的衬垫或屏障或种子或成核层。此外，可以在ICP溅射期间溅射RF线圈以提供保护材料。在另一个腔室中，辅助磁体阵列沿磁控溅射反应器的侧壁朝着晶片从目标侧面定位。磁控管优选地是小而强的，具有围绕第二磁极性较弱的外极的第一磁极的更强的外极并围绕腔的中心轴旋转。辅助磁体优选地具有第一磁极以将不平衡的磁场分量拉向晶片。辅助磁体可以是永磁体或电磁体。

4. 发明申请

US20050133361A1 Compensation of spacing between magnetron and sputter target 审中-公开
标题翻译：磁控管与溅射靶之间的间距补偿
公开(公告)号：US20050133361A1
公开(公告)日：2005-06-23
申请号：US10942358
申请日：2004-09-16
申请人： Peijun Ding , Daniel Lubben , Ilyoung Hong , Michael Miller , Hsien-Lung Yang , Suraj Rengarajan , Arvind Sundarrajan , Goichi Yoshidome
发明人： Peijun Ding , Daniel Lubben , Ilyoung Hong , Michael Miller , Hsien-Lung Yang , Suraj Rengarajan , Arvind Sundarrajan , Goichi Yoshidome
IPC分类号： C23C14/32 , C23C14/34 , C23C14/35 , C23C14/54 , H01J37/34
CPC分类号： C23C14/3407 , C23C14/35 , C23C14/54 , H01J37/3408 , H01J37/3455
摘要： A lift mechanism for and a corresponding use of a magnetron in a plasma sputter reactor. A magnetron rotating about the target axis is controllably lifted away from the back of the target to compensate for sputter erosion, thereby maintaining a constant magnetic field and resultant plasma density at the sputtered surface, which is particularly important for stable operation with a small magnetron, for example, one executing circular or planetary motion about the target axis. The lift mechanism can include a lead screw axially fixed to the magnetron support shaft and a lead nut engaged therewith to raise the magnetron as the lead nut is turned. Alternatively, the support shaft is axially fixed to a vertically moving slider. The amount of lift may be controlled according a recipe based on accumulated power applied to the target or by monitoring electrical characteristics of the target.
摘要翻译：用于等离子体溅射反应器中的磁控管的升降机构和相应的使用。围绕目标轴旋转的磁控管被可控地从目标的背面提升，以补偿溅射侵蚀，从而在溅射表面保持恒定的磁场和合成的等离子体密度，这对于使用小的磁控管的稳定操作特别重要，例如，一个执行关于目标轴的圆形或行星运动。升降机构可以包括轴向固定到磁控管支撑轴的导螺杆和与其接合的导螺母，以在导螺母转动时升高磁控管。或者，支撑轴轴向固定到垂直移动的滑块。可以根据基于施加到目标的累积功率的配方或通过监视目标的电气特性来控制升力量。

5. 发明申请

US20050133365A1 Mechanism for varying the spacing between sputter magnetron and target 有权
标题翻译：改变溅射磁控管与靶材间距的机理
公开(公告)号：US20050133365A1
公开(公告)日：2005-06-23
申请号：US10942273
申请日：2004-09-16
申请人： Ilyoung Hong , Donny Young , Michael Rosenstein , Robert Lowrance , Daniel Lubben , Michael Miller , Peijun Ding , Sreekrishnan Sankaranarayan , Goichi Yoshidome
发明人： Ilyoung Hong , Donny Young , Michael Rosenstein , Robert Lowrance , Daniel Lubben , Michael Miller , Peijun Ding , Sreekrishnan Sankaranarayan , Goichi Yoshidome
IPC分类号： C23C14/32 , C23C14/34 , C23C14/35 , C23C14/54 , H01J37/34
CPC分类号： C23C14/3407 , C23C14/35 , C23C14/54 , H01J37/3408 , H01J37/3455
摘要： A lift mechanism for and a corresponding use of a magnetron in a plasma sputter reactor. A magnetron rotating about the target axis is controllably lifted away from the back of the target to compensate for sputter erosion, thereby maintaining a constant magnetic field and resultant plasma density at the sputtered surface, which is particularly important for stable operation with a small magnetron, for example, one executing circular or planetary motion about the target axis. The lift mechanism can include a lead screw axially fixed to the magnetron support shaft and a lead nut engaged therewith to raise the magnetron as the lead nut is turned. Alternatively, the support shaft is axially fixed to a vertically moving slider. The amount of lift may be controlled according a recipe based on accumulated power applied to the target or by monitoring electrical characteristics of the target.
摘要翻译：用于等离子体溅射反应器中的磁控管的升降机构和相应的使用。围绕目标轴旋转的磁控管被可控地从目标的背面提升，以补偿溅射侵蚀，从而在溅射表面保持恒定的磁场和合成的等离子体密度，这对于使用小的磁控管的稳定操作特别重要，例如，一个执行关于目标轴的圆形或行星运动。升降机构可以包括轴向固定到磁控管支撑轴的导螺杆和与其接合的导螺母，以在导螺母转动时升高磁控管。或者，支撑轴轴向固定到垂直移动的滑块。可以根据基于施加到目标的累积功率的配方或通过监视目标的电气特性来控制升力量。

6. 外观设计

USD1036354S1 Floatation device for vessel 有权
公开(公告)号：USD1036354S1
公开(公告)日：2024-07-23
申请号：US29919054
申请日：2023-12-01
申请人： Michael Miller
设计人： Michael Miller
摘要： FIG. 1 is a perspective view of a floating device for a vessel;
FIG. 2 is a front view of the floatation device for vessel of FIG. 1;
FIG. 3 is a back view of the floatation device for vessel of FIG. 1;
FIG. 4 is a first side view of the floatation device for vessel of FIG. 1;
FIG. 5 is a second side view of the floatation device for vessel of FIG. 1;
FIG. 6 is a top view of the floatation device for vessel of FIG. 1; and,
FIG. 7 is a bottom view of the floatation device for vessel of FIG. 1.
The broken lines shown are included for the purpose of illustrating portions of the article which form no part of the claimed design.

7. 发明申请

US20160009696A1 COMPOUNDS INHIBITING LEUCINE-RICH REPEAT KINASE ENZYME ACTIVITY 有权
公开(公告)号：US20160009696A1
公开(公告)日：2016-01-14
申请号：US14772290
申请日：2014-02-27
申请人： Michael MILLER , Kallol BASU , Duane DEMONG , Jack SCOTT , Wei LI , Joel HARRIS , Andrew STAMFORD , Marc POIRIER , Paul TEMPEST , MERCK SHARP & DOHME CORP.
发明人： Michael Miller , Kallol Basu , Duane DeMong , Jack Scott , Wei Li , Joel Harris , Andrew Stamford , Marc Poirier , Paul Tempest
IPC分类号： C07D403/14 , C07D401/14 , C07D491/107 , C07D417/14 , C07D471/10 , C07D413/14 , C07D498/08
CPC分类号： C07D403/14 , A61K31/505 , A61K31/506 , C07D401/14 , C07D403/04 , C07D405/14 , C07D409/14 , C07D413/14 , C07D417/14 , C07D471/10 , C07D491/107 , C07D498/08
摘要： The present invention is directed to indazole compounds which are potent inhibitors of LRRK2 kinase and useful in the treatment or prevention of diseases in which the LRRK2 kinase is involved, such as Parkinson's Disease. The invention is also directed to pharmaceutical compositions comprising these compounds and the use of these compounds and compositions in the prevention or treatment of such diseases in which LRRK-2 kinase is involved.

8. 发明授权

US09006228B2 Substituted cyclopropyl compounds, compositions containing such compounds, and methods of treatment 有权
标题翻译：取代的环丙基化合物，含有这些化合物的组合物和治疗方法
公开(公告)号：US09006228B2
公开(公告)日：2015-04-14
申请号：US14126685
申请日：2012-06-11
申请人： Michael Miller , Andrew Stamford , Kallol Basu , Harold B. Wood , Duane DeMong , Wanying Sun , Joie Garfunkle , Christopher Moyes , Zhiyong Hu , Ping Liu , Scott D. Edmondson , Xing Dai , Byron Gabriel DuBois
发明人： Michael Miller , Andrew Stamford , Kallol Basu , Harold B. Wood , Duane DeMong , Wanying Sun , Joie Garfunkle , Christopher Moyes , Zhiyong Hu , Ping Liu , Scott D. Edmondson , Xing Dai , Byron Gabriel DuBois
IPC分类号： C07D417/14 , C07D211/24 , C07D401/04 , C07D401/14 , C07D405/14 , C07D413/04 , C07D413/14 , C07D211/22
CPC分类号： C07D211/24 , C07D211/22 , C07D401/04 , C07D401/14 , C07D405/14 , C07D413/04 , C07D413/14 , C07D417/14
摘要： Substituted cyclopropyl compounds of the formula I: and pharmaceutically acceptable salts thereof are disclosed as useful for treating or preventing type 2 diabetes and similar conditions. The compounds are useful as agonists of the G-protein coupled receptor GPR-119. Pharmaceutical compositions and methods of treatment are also included.
摘要翻译：公开了取代的式I的环丙基化合物及其药学上可接受的盐可用于治疗或预防2型糖尿病和类似病症。该化合物可用作G蛋白偶联受体GPR-119的激动剂。还包括药物组合物和治疗方法。

9. 发明授权

US08791781B2 Spherical magnet 有权
标题翻译：球形磁铁
公开(公告)号：US08791781B2
公开(公告)日：2014-07-29
申请号：US13781019
申请日：2013-02-28
申请人： Michael Miller
发明人： Michael Miller
IPC分类号： H01F7/02
CPC分类号： H01F7/02 , F01K25/10 , F01K27/00 , H01F7/0221
摘要： A spherical magnet is formed as a hollow sphere having a fluid tight outer surface of a first magnetic pole and an inner surface having a second magnetic pole that is magnetically opposite the first pole. A plurality of individual thin flexible rectangular plate magnets are arranged as a continuous outer layer of the spherical magnet. Each individual plate magnet has four sides, an inner magnetic portion and an outer non-magnetic portion that extends around all four sides of the magnetic portion. Each inner magnetic portion includes a first face disposed on the outer surface and having the first pole and a second face opposite the first face, disposed on the inner surface and having the second pole.
摘要翻译：形成具有第一磁极的流体密封外表面的空心球体和具有与第一极磁性相对的第二磁极的内表面的球形磁体。多个单独的薄柔性矩形板磁体被布置为球形磁体的连续外层。每个单独的板状磁体具有四个侧面，内部磁性部分和外部非磁性部分，其围绕磁性部分的所有四个侧面延伸。每个内磁性部分包括设置在外表面上并且具有第一极和与第一面相对的第二面的第一面，设置在内表面上并具有第二极。

10. 发明申请

US20130289629A1 Bone Dowel 审中-公开
标题翻译：骨Dow
公开(公告)号：US20130289629A1
公开(公告)日：2013-10-31
申请号：US13458622
申请日：2012-04-27
申请人： Michael Miller
发明人： Michael Miller
IPC分类号： A61B17/84
CPC分类号： A61B17/68 , A61B17/685 , A61B17/846
摘要： A bone dowel is disclosed that may be used for connecting two or more bone components. The bone dowel may have three dowel sections positioned between a base and a tip with a conical upper section. Each bone dowel section may be positioned in axial alignment adjacent at least one other bone dowel section wherein the diameters decrease over the length of the bone dowel from the base to the tip.
摘要翻译：公开了可用于连接两个或更多个骨组件的骨榫。骨榫可以具有定位在基部和具有锥形上部的尖端之间的三个定位销部分。每个骨榫部分可以邻近至少一个另外的骨榫部分定位成轴向对准，其中直径从骨榫的长度减小到从基部到尖端。

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