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1. 发明授权

US07531882B2 Spin transfer magnetic element with free layers having high perpendicular anisotropy and in-plane equilibrium magnetization 有权
标题翻译：具有高垂直各向异性和面内平衡磁化的自由层的自旋转移磁性元件
公开(公告)号：US07531882B2
公开(公告)日：2009-05-12
申请号：US11239969
申请日：2005-09-30
申请人： Paul P. Nguyen , Yiming Huai
发明人： Paul P. Nguyen , Yiming Huai
IPC分类号： H01L43/00
CPC分类号： H01F41/302 , B82Y25/00 , B82Y40/00 , G01R33/093 , G01R33/1284 , G11C11/161 , G11C11/1675 , H01F10/30 , H01F10/3236 , H01F10/3263 , H01F10/3272 , H01F10/3286 , H01L43/08 , Y10T428/26 , Y10T428/261 , Y10T428/265
摘要： A method and system for providing a magnetic element that can be used in a magnetic memory is disclosed. The magnetic element includes pinned, nonmagnetic spacer, and free layers. The spacer layer resides between the pinned and free layers. The free layer can be switched using spin transfer when a write current is passed through the magnetic element. The magnetic element may also include a barrier layer, a second pinned layer. Alternatively, second pinned and second spacer layers and a second free layer magnetostatically coupled to the free layer are included. At least one free layer has a high perpendicular anisotropy. The high perpendicular anisotropy has a perpendicular anisotropy energy that is at least twenty and less than one hundred percent of the out-of-plane demagnetization energy.
摘要翻译：公开了一种用于提供可用于磁存储器中的磁性元件的方法和系统。磁性元件包括固定，非磁性间隔物和自由层。间隔层位于固定层和自由层之间。当写入电流通过磁性元件时，可以使用自旋转移来切换自由层。磁性元件还可以包括阻挡层，第二被钉扎层。或者，包括第二固定和第二间隔层和静电耦合到自由层的第二自由层。至少一个自由层具有高的垂直各向异性。高垂直各向异性具有垂直各向异性能，其至少为平面外退磁能的百分之二十。

2. 发明授权

US07242045B2 Spin transfer magnetic element having low saturation magnetization free layers 有权
标题翻译：具有低饱和磁化自由层的自旋转移磁性元件
公开(公告)号：US07242045B2
公开(公告)日：2007-07-10
申请号：US10783416
申请日：2004-02-19
申请人： Paul P. Nguyen , Yiming Huai , Zhitao Diao , Frank Albert
发明人： Paul P. Nguyen , Yiming Huai , Zhitao Diao , Frank Albert
IPC分类号： H01L29/76
CPC分类号： H01L43/10 , B82Y25/00 , B82Y40/00 , G11C11/161 , H01F10/16 , H01F10/3263 , H01F10/3272 , H01F41/303
摘要： A method and system for providing a magnetic element that can be used in a magnetic memory is disclosed. The magnetic element includes pinned, nonmagnetic spacer, and free layers. The spacer layer resides between the pinned and free layers. The free layer can be switched using spin transfer when a write current is passed through the magnetic element. The magnetic element may also include a barrier layer, a second pinned layer. Alternatively, second pinned and second spacer layers and a second free layer magnetostatically coupled to the free layer are included. In one aspect, the free layer(s) include ferromagnetic material(s) diluted with nonmagnetic material(s) and/or ferrimagnetically doped to provide low saturation magnetization(s).
摘要翻译：公开了一种用于提供可用于磁存储器中的磁性元件的方法和系统。磁性元件包括固定，非磁性间隔物和自由层。间隔层位于固定层和自由层之间。当写入电流通过磁性元件时，可以使用自旋转移来切换自由层。磁性元件还可以包括阻挡层，第二被钉扎层。或者，包括第二固定和第二间隔层和静电耦合到自由层的第二自由层。在一个方面，自由层包括用非磁性材料稀释的铁磁材料和/或亚铁磁掺杂以提供低的饱和磁化强度。

3. 发明授权

US06933155B2 Methods for providing a sub .15 micron magnetic memory structure 有权
标题翻译：提供15微米磁记忆体结构的方法
公开(公告)号：US06933155B2
公开(公告)日：2005-08-23
申请号：US10443936
申请日：2003-05-21
申请人： Frank Albert , Yiming Huai , Paul P. Nguyen
发明人： Frank Albert , Yiming Huai , Paul P. Nguyen
IPC分类号： H01L21/00 , H01L43/12
CPC分类号： H01L43/12
摘要： A method for providing a magnetic element is disclosed. The method includes providing at least one magnetic element layer and providing a hard mask structure for masking a portion of the at least one magnetic element layer. The hard mask structure is made from hard mask material(s) that are etchable for defining the hard mask structure. The hard mask structure also acts as a mask during definition of a width of the magnetic element. The method also includes defining the width of the magnetic element by removing a portion of the at least one magnetic element layer using the hard mask structure as a mask. The hard mask structure preferably acts as a polishing stop for a planarization step, such as a chemical mechanical polish, polishing resistant structures might be provided to improve planarization of a magnetic memory incorporating the magnetic element.
摘要翻译：公开了一种用于提供磁性元件的方法。该方法包括提供至少一个磁性元件层并提供用于掩蔽该至少一个磁性元件层的一部分的硬掩模结构。硬掩模结构由可刻蚀硬掩模结构的硬掩模材料制成。在确定磁性元件的宽度的同时，硬掩模结构还用作掩模。该方法还包括通过使用硬掩模结构作为掩模去除至少一个磁性元件层的一部分来限定磁性元件的宽度。硬掩模结构优选地用作平面化步骤的抛光停止，例如化学机械抛光，可以提供抛光抗蚀结构以改善结合有磁性元件的磁性存储器的平坦化。

4. 发明授权

US06847547B2 Magnetostatically coupled magnetic elements utilizing spin transfer and an MRAM device using the magnetic element 有权
标题翻译：使用自旋转移的磁静电耦合磁性元件和使用该磁性元件的MRAM器件
公开(公告)号：US06847547B2
公开(公告)日：2005-01-25
申请号：US10377689
申请日：2003-02-28
申请人： Frank Albert , Yiming Huai , Paul P. Nguyen
发明人： Frank Albert , Yiming Huai , Paul P. Nguyen
IPC分类号： G11C11/16 , G11C11/15
CPC分类号： G11C11/16
摘要： A method and system for providing a magnetic element and a corresponding memory are disclosed. In one aspect, the method and system include providing a dual spin tunnel/valve structure and at least one spin valve. The dual spin tunnel/valve structure includes a nonmagnetic spacer layer between a pinned layer and a free layer, another pinned layer and a barrier layer between the free layer and the other pinned layer. The free layers of the dual spin tunnel/valve structure and the spin valve are magnetostatically coupled. In one embodiment a separation layer resides between the dual spin tunnel/valve structure and the spin valve. In another aspect, the method and system include providing two dual spin valves, a spin tunneling junction there between and, in one embodiment, the separation layer. In both aspects, the magnetic element is configured to write to the free layers using spin transfer when a write current is passed through the magnetic element.
摘要翻译：公开了一种用于提供磁性元件和相应的存储器的方法和系统。在一个方面，该方法和系统包括提供双自旋隧道/阀结构和至少一个自旋阀。双自旋隧道/阀结构包括在被钉扎层和自由层之间的非磁性间隔层，在自由层和另一个钉扎层之间的另一个钉扎层和阻挡层。双自旋隧道/阀结构和自旋阀的自由层是静磁耦合的。在一个实施例中，分离层位于双自旋隧道/阀结构和自旋阀之间。在另一方面，该方法和系统包括提供两个双自旋阀，其间的自旋隧道结，在一个实施例中，分离层。在两个方面，磁性元件配置成当写入电流通过磁性元件时，使用自旋转移来写入自由层。

5. 发明申请

US20110140217A1 SPIN TRANSFER MAGNETIC ELEMENT WITH FREE LAYERS HAVING HIGH PERPENDICULAR ANISOTROPY AND IN-PLANE EQUILIBRIUM MAGNETIZATION 审中-公开
公开(公告)号：US20110140217A1
公开(公告)日：2011-06-16
申请号：US12938988
申请日：2010-11-03
申请人： Paul P. Nguyen , Yiming Huai , Eugene Chen
发明人： Paul P. Nguyen , Yiming Huai , Eugene Chen
IPC分类号： H01L29/82
CPC分类号： G01R33/1284 , B82Y25/00 , B82Y40/00 , G01R33/093 , G11C11/161 , G11C11/1675 , H01F10/30 , H01F10/3236 , H01F10/3272 , H01F10/3286 , H01F41/302 , H01L43/08
摘要： A method and system for providing a magnetic element that can be used in a magnetic memory is disclosed. The magnetic element includes pinned, nonmagnetic spacer, and free layers. The spacer layer resides between the pinned and free layers. The free layer can be switched using spin transfer when a write current is passed through the magnetic element. The free layer includes a first ferromagnetic layer and a second ferromagnetic layer. The second ferromagnetic layer has a very high perpendicular anisotropy and an out-of-plane demagnetization energy. The very high perpendicular anisotropy energy is greater than the out-of-plane demagnetization energy of the second layer.

6. 发明申请

US20080230819A1 SPIN TRANSFER MAGNETIC ELEMENT WITH FREE LAYERS HAVING HIGH PERPENDICULAR ANISOTROPY AND IN-PLAN EQUILIBRIUM MAGNETIZATION 有权
标题翻译：具有高度均匀分布和平面平均磁化的自由层的转移磁元件
公开(公告)号：US20080230819A1
公开(公告)日：2008-09-25
申请号：US12133671
申请日：2008-06-05
申请人： Paul P. Nguyen , Yiming Huai
发明人： Paul P. Nguyen , Yiming Huai
IPC分类号： H01L43/08
CPC分类号： H01F41/302 , B82Y25/00 , B82Y40/00 , G01R33/093 , G01R33/1284 , G11C11/161 , G11C11/1675 , H01F10/30 , H01F10/3236 , H01F10/3263 , H01F10/3272 , H01F10/3286 , H01L43/08 , Y10T428/26 , Y10T428/261 , Y10T428/265
摘要： A method and system for providing a magnetic element that can be used in a magnetic memory is disclosed. The magnetic element includes pinned, nonmagnetic spacer, and free layers. The spacer layer resides between the pinned and free layers. The free layer can be switched using spin transfer when a write current is passed through the magnetic element. The free layer includes a first ferromagnetic layer and a second ferromagnetic layer. The second ferromagnetic layer has a very high perpendicular anisotropy and an out-of-plane demagnetization energy. The very high perpendicular anisotropy energy is greater than the out-of-plane demagnetization energy of the second layer.
摘要翻译：公开了一种用于提供可用于磁存储器中的磁性元件的方法和系统。磁性元件包括固定，非磁性间隔物和自由层。间隔层位于固定层和自由层之间。当写入电流通过磁性元件时，可以使用自旋转移来切换自由层。自由层包括第一铁磁层和第二铁磁层。第二铁磁层具有非常高的垂直各向异性和面外去磁能。非常高的垂直各向异性能量大于第二层的平面外退磁能。

7. 发明授权

US06992359B2 Spin transfer magnetic element with free layers having high perpendicular anisotropy and in-plane equilibrium magnetization 有权
公开(公告)号：US06992359B2
公开(公告)日：2006-01-31
申请号：US10789334
申请日：2004-02-26
申请人： Paul P. Nguyen , Yiming Huai
发明人： Paul P. Nguyen , Yiming Huai
IPC分类号： H01L43/00
CPC分类号： H01F41/302 , B82Y25/00 , B82Y40/00 , G01R33/093 , G01R33/1284 , G11C11/161 , G11C11/1675 , H01F10/30 , H01F10/3236 , H01F10/3263 , H01F10/3272 , H01F10/3286 , H01L43/08 , Y10T428/26 , Y10T428/261 , Y10T428/265
摘要： A method and system for providing a magnetic element that can be used in a magnetic memory is disclosed. The magnetic element includes pinned, nonmagnetic spacer, and free layers. The spacer layer resides between the pinned and free layers. The free layer can be switched using spin transfer when a write current is passed through the magnetic element. The magnetic element may also include a barrier layer, a second pinned layer. Alternatively, second pinned and second spacer layers and a second free layer magnetostatically coupled to the free layer are included. At least one free layer has a high perpendicular anisotropy. The high perpendicular anisotropy has a perpendicular anisotropy energy that is at least twenty and less than one hundred percent of the out-of-plane demagnetization energy.

8. 发明授权

US06920063B2 Magnetic element utilizing spin transfer and an MRAM device using the magnetic element 有权
标题翻译：利用自旋转移的磁性元件和使用该磁性元件的MRAM器件
公开(公告)号：US06920063B2
公开(公告)日：2005-07-19
申请号：US10741188
申请日：2003-12-18
申请人： Yiming Huai , Paul P. Nguyen
发明人： Yiming Huai , Paul P. Nguyen
IPC分类号： G11C11/15 , G11C11/16 , H01F10/32 , H01F41/30 , H01L21/8246 , H01L27/105 , H01L43/08 , G11C11/14
CPC分类号： H01F10/3263 , B82Y25/00 , B82Y40/00 , H01F41/302
摘要： A method and system for providing a magnetic element capable of being written using spin-transfer effect while generating a high output signal and a magnetic memory using the magnetic element are disclosed. The magnetic element includes a first ferromagnetic pinned layer, a nonmagnetic spacer layer, a ferromagnetic free layer, an insulating barrier layer and a second ferromagnetic pinned layer. The pinned layer has a magnetization pinned in a first direction. The nonmagnetic spacer layer is conductive and is between the first pinned layer and the free layer. The barrier layer resides between the free layer and the second pinned layer and is an insulator having a thickness allowing electron tunneling through the barrier layer. The second pinned layer has a magnetization pinned in a second direction. The magnetic element is configured to allow the magnetization of the free layer to change direction due to spin transfer when a write current is passed through the magnetic element.
摘要翻译：公开了一种用于提供能够使用自旋传递效应写入的磁性元件同时产生高输出信号的磁性元件和使用该磁性元件的磁性存储器的方法和系统。磁性元件包括第一铁磁性钉扎层，非磁性间隔层，铁磁性自由层，绝缘阻挡层和第二铁磁性钉扎层。钉扎层具有沿第一方向固定的磁化。非磁性间隔层是导电的并且在第一被钉扎层和自由层之间。阻挡层位于自由层和第二被钉扎层之间，并且是具有允许电子隧穿穿过阻挡层的厚度的绝缘体。第二被钉扎层具有沿第二方向固定的磁化。磁性元件配置成当写入电流通过磁性元件时，由于自旋转移使自由层的磁化改变方向。

9. 发明申请

US20110012215A1 SPIN TRANSFER MAGNETIC ELEMENT WITH FREE LAYERS HAVING HIGH PERPENDICULAR ANISOTROPY AND IN-PLANE EQUILIBRIUM MAGNETIZATION 审中-公开
标题翻译：具有高度均匀性和平面平衡磁化的自由层的旋转传递元件
公开(公告)号：US20110012215A1
公开(公告)日：2011-01-20
申请号：US12893924
申请日：2010-09-29
申请人： Paul P. Nguyen , Yiming Huai
发明人： Paul P. Nguyen , Yiming Huai
IPC分类号： H01L29/82
CPC分类号： H01F41/302 , B82Y25/00 , B82Y40/00 , G01R33/093 , G01R33/1284 , G11C11/161 , G11C11/1675 , H01F10/30 , H01F10/3236 , H01F10/3263 , H01F10/3272 , H01F10/3286 , H01L43/08 , Y10T428/26 , Y10T428/261 , Y10T428/265
摘要： A method and system for providing a magnetic element that can be used in a magnetic memory is disclosed. The magnetic element includes pinned, nonmagnetic spacer, and free layers. The spacer layer resides between the pinned and free layers. The free layer can be switched using spin transfer when a write current is passed through the magnetic element. The free layer includes a first ferromagnetic layer and a second ferromagnetic layer. The second ferromagnetic layer has a very high perpendicular anisotropy and an out-of-plane demagnetization energy. The very high perpendicular anisotropy energy is greater than the out-of-plane demagnetization energy of the second layer.
摘要翻译：公开了一种用于提供可用于磁存储器中的磁性元件的方法和系统。磁性元件包括固定，非磁性间隔物和自由层。间隔层位于固定层和自由层之间。当写入电流通过磁性元件时，可以使用自旋转移来切换自由层。自由层包括第一铁磁层和第二铁磁层。第二铁磁层具有非常高的垂直各向异性和面外去磁能。非常高的垂直各向异性能量大于第二层的平面外退磁能。

10. 发明授权

US07369427B2 Magnetic elements with spin engineered insertion layers and MRAM devices using the magnetic elements 有权
标题翻译：具有自旋工程插入层的磁性元件和使用磁性元件的MRAM器件
公开(公告)号：US07369427B2
公开(公告)日：2008-05-06
申请号：US10938219
申请日：2004-09-09
申请人： Zhitao Diao , Yiming Huai , Thierry Valet , Paul P. Nguyen , Mahendra Pakala
发明人： Zhitao Diao , Yiming Huai , Thierry Valet , Paul P. Nguyen , Mahendra Pakala
IPC分类号： G11C11/00 , G11C11/14 , G11C11/15
CPC分类号： H01F10/3272 , B82Y25/00 , B82Y40/00 , H01F10/30 , H01F41/302 , H01L43/10
摘要： A method and system include providing a pinned layer, a free layer, and a spacer layer between the pinned and free layers. The spacer layer is nonmagnetic. The magnetic element is configured to allow the free layer to be switched due to spin transfer when a write current is passed through the magnetic element. In one aspect, the method and system include providing a spin engineered layer adjacent to the free layer. The spin engineered layer is configured to more strongly scatter majority electrons than minority electrons. In another aspect, at least one of the pinned, free, and spacer layers is a spin engineered layer having an internal spin engineered layer configured to more strongly scatter majority electrons than minority electrons. In this aspect, the magnetic element may include another pinned layer and a barrier layer between the free and pinned layers.
摘要翻译：一种方法和系统包括在被钉扎层和自由层之间提供钉扎层，自由层和间隔层。间隔层是非磁性的。磁性元件配置成当写入电流通过磁性元件时由于自旋转移而允许自由层被切换。在一个方面，该方法和系统包括提供与自由层相邻的旋转工程化层。旋转工程层被配置为比少数电子更强烈地散射多数电子。在另一方面，被钉扎，自由和间隔层中的至少一个是具有内部自旋工程化层的纺丝工程层，其被配置成比少数电子更强烈地散射多数电子。在这方面，磁性元件可以包括另一被钉扎层和位于游离层和钉扎层之间的阻挡层。

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