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1. 发明授权

US08988005B2 Illumination control through selective activation and de-activation of lighting elements 有权
标题翻译：通过选择性激活和去激活照明元件进行照明控制
公开(公告)号：US08988005B2
公开(公告)日：2015-03-24
申请号：US13398316
申请日：2012-02-16
申请人： Paul Jungwirth , Ian Ashdown , Michael Albert Tischler
发明人： Paul Jungwirth , Ian Ashdown , Michael Albert Tischler
IPC分类号： H05B37/02 , H05B33/08
CPC分类号： H05B33/0824
摘要： In various embodiments, an illumination system includes multiple light-emitting strings that are selectively activated or deactivated to regulate an overall output of the array.
摘要翻译：在各种实施例中，照明系统包括多个发光串，其被选择性地激活或去激活以调节阵列的总体输出。

2. 发明申请

US20120212138A1 ILLUMINATION CONTROL THROUGH SELECTIVE ACTIVATION AND DE-ACTIVATION OF LIGHTING ELEMENTS 有权
标题翻译：通过选择性激活和启动照明元件的照明控制
公开(公告)号：US20120212138A1
公开(公告)日：2012-08-23
申请号：US13398316
申请日：2012-02-16
申请人： Paul Jungwirth , Ian Ashdown , Michael Albert Tischler
发明人： Paul Jungwirth , Ian Ashdown , Michael Albert Tischler
IPC分类号： H05B37/02
CPC分类号： H05B33/0824
摘要： In various embodiments, an illumination system includes multiple light-emitting strings that are selectively activated or deactivated to regulate an overall output of the array.
摘要翻译：在各种实施例中，照明系统包括多个发光串，其被选择性地激活或去激活以调节阵列的总体输出。

3. 发明授权

US08133794B2 Semiconductor structure and method of manufacture 有权
标题翻译：半导体结构及制造方法
公开(公告)号：US08133794B2
公开(公告)日：2012-03-13
申请号：US12330763
申请日：2008-12-09
申请人： Michael Albert Tischler
发明人： Michael Albert Tischler
IPC分类号： H01L21/76
CPC分类号： H01L27/0617 , H01L21/76232 , H01L27/0629 , H01L27/08
摘要： In various embodiments, semiconductor structures and methods to manufacture these structures are disclosed. In one embodiment, a method includes removing a portion of a semiconductor material using an orientation-dependent etch to form a first cavity, a second cavity, wherein the first cavity is isolated from the second cavity, a first protrusion is between the first cavity and the second cavity, and the semiconductor material comprises silicon. The method further includes performing a thermal oxidation to convert a portion of the silicon of the semiconductor material to silicon dioxide and forming a first dielectric material over the first cavity, over the second cavity, over at least a portion of the semiconductor material, and over at least a portion of the first protrusion. Other embodiments are described and claimed.
摘要翻译：在各种实施例中，公开了制造这些结构的半导体结构和方法。在一个实施例中，一种方法包括使用取向依赖性蚀刻去除一部分半导体材料以形成第一空腔，第二腔，其中第一空腔与第二空腔隔离，第一突起位于第一空腔和第二腔和半导体材料包括硅。该方法还包括执行热氧化以将半导体材料的硅的一部分转换为二氧化硅，并在半导体材料的至少一部分上方的第二空腔上方的第一空腔上形成第一电介质材料，以及在所述第一突起的至少一部分。描述和要求保护其他实施例。

4. 发明申请

US20090149009A1 SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURE 有权
标题翻译：半导体结构及其制造方法
公开(公告)号：US20090149009A1
公开(公告)日：2009-06-11
申请号：US12330756
申请日：2008-12-09
申请人： Michael Albert Tischler
发明人： Michael Albert Tischler
IPC分类号： H01L21/4763 , H01L21/465
CPC分类号： H01L21/3063 , H01L21/30608 , H01L21/76232 , H01L27/0629
摘要： In various embodiments, semiconductor structures and methods to manufacture these structures are disclosed. In one embodiment, a method includes removing a portion of a semiconductor material using an electrochemical etch to form a first cavity, a second cavity, wherein the first cavity is isolated from the second cavity, a first protrusion is between the first cavity and the second cavity, and the semiconductor material comprises silicon. The method further includes performing a thermal oxidation to convert a portion of the silicon of the semiconductor material to silicon dioxide and forming a first dielectric material over the first cavity, over the second cavity, over at least a portion of the semiconductor material, and over at least a portion of the first protrusion. Other embodiments are described and claimed.
摘要翻译：在各种实施例中，公开了制造这些结构的半导体结构和方法。在一个实施例中，一种方法包括使用电化学蚀刻去除半导体材料的一部分以形成第一空腔，第二腔，其中第一空腔与第二空腔隔离，第一突起位于第一腔和第二腔之间并且半导体材料包括硅。该方法还包括执行热氧化以将半导体材料的硅的一部分转换为二氧化硅，并在半导体材料的至少一部分上方的第二空腔上方的第一空腔上形成第一电介质材料，以及在所述第一突起的至少一部分。描述和要求保护其他实施例。

5. 发明授权

US07998829B2 Semiconductor structure and method of manufacture 有权
标题翻译：半导体结构及制造方法
公开(公告)号：US07998829B2
公开(公告)日：2011-08-16
申请号：US12330756
申请日：2008-12-09
申请人： Michael Albert Tischler
发明人： Michael Albert Tischler
IPC分类号： H01L21/76
CPC分类号： H01L21/3063 , H01L21/30608 , H01L21/76232 , H01L27/0629
摘要： In various embodiments, semiconductor structures and methods to manufacture these structures are disclosed. In one embodiment, a method includes removing a portion of a semiconductor material using an electrochemical etch to form a first cavity, a second cavity, wherein the first cavity is isolated from the second cavity, a first protrusion is between the first cavity and the second cavity, and the semiconductor material comprises silicon. The method further includes performing a thermal oxidation to convert a portion of the silicon of the semiconductor material to silicon dioxide and forming a first dielectric material over the first cavity, over the second cavity, over at least a portion of the semiconductor material, and over at least a portion of the first protrusion. Other embodiments are described and claimed.
摘要翻译：在各种实施例中，公开了制造这些结构的半导体结构和方法。在一个实施例中，一种方法包括使用电化学蚀刻去除半导体材料的一部分以形成第一空腔，第二腔，其中第一空腔与第二空腔隔离，第一突起位于第一腔和第二腔之间并且半导体材料包括硅。该方法还包括执行热氧化以将半导体材料的硅的一部分转换为二氧化硅，并在半导体材料的至少一部分上方的第二空腔上方的第一空腔上形成第一电介质材料，以及在所述第一突起的至少一部分。描述和要求保护其他实施例。

6. 发明申请

US20100216316A1 TRANSFER OF HIGH TEMPERATURE WAFERS 有权
标题翻译：高温转移
公开(公告)号：US20100216316A1
公开(公告)日：2010-08-26
申请号：US12678466
申请日：2008-11-12
申请人： Michael Albert Tischler , Ronald Thomas Bertram, JR.
发明人： Michael Albert Tischler , Ronald Thomas Bertram, JR.
IPC分类号： H01L21/30
CPC分类号： H01L21/67748 , H01L21/6838
摘要： This invention provides apparatus, protocols, and methods that permit wafers to be loaded and unloaded in a gas-phase epitaxial growth chamber at high temperatures. Specifically, this invention provides a device for moving wafers or substrates that can bath a substrate being moved in active gases that are optionally temperature controlled. The active gases can act to limit or prevent sublimation or decomposition of the wafer surface, and can be temperature controlled to limit or prevent thermal damage. Thereby, previously-necessary temperature ramping of growth chambers can be reduced or eliminated leading to improvement in wafer throughput and system efficiency.
摘要翻译：本发明提供允许在高温下在气相外延生长室中装载和卸载晶片的装置，方案和方法。具体地说，本发明提供了一种用于移动晶片或衬底的装置，该装置可以在可任意温度控制的活性气体中洗涤被移动的衬底。活性气体可以起到限制或防止晶片表面升华或分解的作用，并且可以进行温度控制以限制或防止热损伤。因此，可以减少或消除生长室的先前必需的温度斜坡，从而提高晶片生产量和系统效率。

7. 发明授权

US07777295B2 Semiconductor structure and method of manufacture 有权
标题翻译：半导体结构及制造方法
公开(公告)号：US07777295B2
公开(公告)日：2010-08-17
申请号：US12329914
申请日：2008-12-08
申请人： Bishnu Prasanna Gogoi , Michael Albert Tischler
发明人： Bishnu Prasanna Gogoi , Michael Albert Tischler
IPC分类号： H01L29/06 , H01L21/764 , H01L21/768
CPC分类号： H01L21/76237 , H01L21/76232
摘要： In various embodiments, semiconductor structures and methods to manufacture these structures are disclosed. In one embodiment, a structure includes a dielectric material and a void below a surface of a substrate. The structure further includes a doped dielectric material over the dielectric material, over the first void, wherein at least a portion of the dielectric material is between at least a portion of the substrate and at least a portion of the doped dielectric material. Other embodiments are described and claimed.
摘要翻译：在各种实施例中，公开了制造这些结构的半导体结构和方法。在一个实施例中，结构包括电介质材料和衬底表面下的空隙。所述结构还包括在所述电介质材料上方的所述第一空隙上的掺杂电介质材料，其中所述电介质材料的至少一部分在所述衬底的至少一部分和所述掺杂电介质材料的至少一部分之间。描述和要求保护其他实施例。

8. 发明申请

US20080142923A1 SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURE 有权
标题翻译：半导体结构及其制造方法
公开(公告)号：US20080142923A1
公开(公告)日：2008-06-19
申请号：US11611515
申请日：2006-12-15
申请人： Michael Albert Tischler
发明人： Michael Albert Tischler
IPC分类号： H01L29/00 , H01L21/4763 , H01L21/20 , H01L21/76
CPC分类号： H01L21/764 , H01L27/0611 , H01L27/08
摘要： In various embodiments, semiconductor structures and methods to manufacture these structures are disclosed. In one embodiment, a semiconductor structure having a silicon-on-insulator (SOI) substrate and a dielectric region is disclosed. The dielectric region is adjacent to the active layer of the SOI substrate and the dielectric region includes a portion of a buried oxide (BOX) layer of the SOI substrate. At least a portion of the dielectric region extends from a surface of the active layer of the SOI substrate to a depth of at least about three microns or greater below the surface of the active layer. Other embodiments are described and claimed.
摘要翻译：在各种实施例中，公开了制造这些结构的半导体结构和方法。在一个实施例中，公开了具有绝缘体上硅（SOI）衬底和电介质区域的半导体结构。电介质区域与SOI衬底的有源层相邻，并且电介质区域包括SOI衬底的一部分掩埋氧化物（BOX）层。电介质区域的至少一部分从SOI衬底的有源层的表面延伸到活性层表面下方至少约三微米或更大的深度。描述和要求保护其他实施例。

9. 发明授权

US08455370B2 Transfer of high temperature wafers 有权
标题翻译：转移高温晶圆
公开(公告)号：US08455370B2
公开(公告)日：2013-06-04
申请号：US13410352
申请日：2012-03-02
申请人： Michael Albert Tischler , Ronald Thomas Bertram, Jr.
发明人： Michael Albert Tischler , Ronald Thomas Bertram, Jr.
IPC分类号： H01L21/31
CPC分类号： H01L21/67748 , H01L21/6838
摘要： This invention provides methods that permit wafers to be loaded and unloaded in a gas-phase epitaxial growth chamber at high temperatures. Specifically, this invention provides a method for moving wafers or substrates that can bathe a substrate being moved in active gases that are optionally temperature controlled. The active gases can act to limit or prevent sublimation or decomposition of the wafer surface, and can be temperature controlled to limit or prevent thermal damage. Thereby, previously-necessary temperature ramping of growth chambers can be reduced or eliminated leading to improvement in wafer throughput and system efficiency.
摘要翻译：本发明提供了允许在高温下在气相外延生长室中装载和卸载晶片的方法。具体地说，本发明提供一种用于移动晶片或衬底的方法，该方法可以在任选温度控制的活性气体中洗涤移动的衬底。活性气体可以起到限制或防止晶片表面升华或分解的作用，并且可以进行温度控制以限制或防止热损伤。因此，可以减少或消除生长室的先前必需的温度斜坡，从而提高晶片生产量和系统效率。

10. 发明授权

US08431419B2 UV absorption based monitor and control of chloride gas stream 有权
标题翻译：基于紫外吸收的监测和控制氯化物气流
公开(公告)号：US08431419B2
公开(公告)日：2013-04-30
申请号：US13060639
申请日：2009-07-21
申请人： Ronald Thomas Bertram, Jr. , Chantal Arena , Christiaan J. Werkhoven , Michael Albert Tischler , Vasil Vorsa , Andrew D. Johnson
发明人： Ronald Thomas Bertram, Jr. , Chantal Arena , Christiaan J. Werkhoven , Michael Albert Tischler , Vasil Vorsa , Andrew D. Johnson
IPC分类号： H01L21/00
CPC分类号： C23C16/52 , C23C16/301 , C30B25/165 , C30B29/403
摘要： A semiconductor growth system includes a chamber and a source of electromagnetic radiation. A detector is arranged to detect absorption of radiation from the source by a chloride- based chemical of the reaction chamber. A control system controls the operation of the chamber in response to the absorption of radiation by the chloride-based chemical. The control system controls the operation of the chamber by adjusting a parameter of the reaction chamber.
摘要翻译：半导体生长系统包括室和电磁辐射源。检测器被布置成通过反应室的基于氯化物的化学物质来检测来自源的辐射的吸收。控制系统响应于基于氯化物的化学品对辐射的吸收来控制室的操作。控制系统通过调节反应室的参数来控制室的操作。

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